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Current guidance VCSEL and preparation method thereof

A current-steering, p-type technology, used in circuits, electrical components, semiconductor lasers, etc., can solve problems such as device reliability degradation, and achieve the effects of reducing series resistance, avoiding damage, and stabilizing single transverse mode lasing.

Inactive Publication Date: 2018-09-14
BEIJING UNIV OF TECH
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

Generally, the single transverse mode VCSEL is mainly an oxidation-limited VCSEL, but the oxidation of the VCSEL reduces the reliability of the device.

Method used

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  • Current guidance VCSEL and preparation method thereof
  • Current guidance VCSEL and preparation method thereof
  • Current guidance VCSEL and preparation method thereof

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Embodiment 1

[0026] Refer below figure 1 A current-steering VCSEL structure provided according to an embodiment of the present invention is described. It includes: a conductive GaAs substrate 11, an n-type GaAs buffer layer 12, an n-type AlGaAs / AlAs DBR 13, an AlGaAs lower confinement layer 14, a multi-quantum well light-emitting region 15, an AlGaAs upper confinement layer 16, an epitaxial p-type AlGaAs / AlAs AlAs DBR 17 , proton injection grid structure 31 , secondary epitaxial p-type AlGaAs / AlAs DBR 41 , p-type GaAs ohmic contact layer 42 , n-face electrode 52 and p-face electrode 51 .

[0027] The present invention also provides a method for preparing a current-guided VCSEL, comprising the following steps:

[0028] Step 1: Put a conductive GaAs substrate into the MOVCD, raise the temperature in the chamber to 700-750°C, and inject H 2 and AsH 3 , to remove water and oxides from the substrate surface. Lower the temperature to 600-650°C, and pass TMGa, AsH into the chamber 3 etc., gr...

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Abstract

The present invention provides a current guidance VCSEL and a preparation method thereof, belonging to the technical field of semiconductors. The VCSEL comprises a conductive GaAs substrate, an n-typeGaAs buffer layer, an n-type AlGaAs / AlAs DBR, an AlGaAs lower limitation layer, a multi-quantum well luminous area, an AlGaAs upper limitation layer, a primary epitaxial p-type AlGaAs / AlAs DBR, a proton implantation lattice structure, a secondary epitaxial p-type AlGaAs / AlAs DBR, a p-type GaAs Ohmic contact layer, an n-face electrode and a p-face electrode. The proton implantation lattice structure comprises 3-5 pairs of thicknesses of the DBR to provide effective current and gain limitation and conttrol the proton injection depth; and moreover, the proton implantation lattice width is reduced from the center to two sides, the whole light gain distribution is matched with the single transverse mode Gaussian distribution to achieve stable single transverse mode maser.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a preparation method of a current guiding type VCSEL. Background technique [0002] Vertical cavity surface emitting laser (VCSEL) is widely used in 3D sensing, laser printing, optical communication and optical storage due to its advantages of low power consumption, easy two-dimensional integration, easy coupling of circular light spot with optical fiber, and cost saving in on-chip testing. field. VCSEL generally includes a columnar resonator structure, including a buffer layer, a lower DBR, a lower confinement layer, a quantum well light-emitting layer, an upper confinement layer, an upper DBR and an ohmic contact layer. In order to reduce the threshold current, oxidation or proton implantation is used to form a current confinement structure. Electrodes are made on the contact layer and the substrate surface, and current is injected from the electrodes into ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/187H01S5/323H01S5/343
CPCH01S5/183H01S5/187H01S5/32316H01S5/34353
Inventor 王智勇周广正李颖兰天
Owner BEIJING UNIV OF TECH
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