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Vertical cavity surface emitting laser and manufacturing method thereof

A technology of vertical cavity surface emission and manufacturing method, which is applied to the field of vertical cavity surface emitting laser and its manufacturing, can solve the problems of high operation difficulty, high difficulty, and high difficulty coefficient, and achieves the effect of simple manufacturing process

Pending Publication Date: 2020-07-31
长春中科长光时空光电技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This technology is difficult, requires high equipment, and is difficult to operate; realizing light field and current confinement by burying tunnel junctions requires extremely difficult secondary epitaxy technology

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  • Vertical cavity surface emitting laser and manufacturing method thereof
  • Vertical cavity surface emitting laser and manufacturing method thereof
  • Vertical cavity surface emitting laser and manufacturing method thereof

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Embodiment Construction

[0039] In order to enable those skilled in the art to better understand the solution of the present application, the present application will be further described in detail below in conjunction with the drawings and specific implementation methods. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0040] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed bel...

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Abstract

The invention discloses a vertical cavity surface emitting laser. The vertical cavity surface emitting laser comprises a first electrode, a substrate, a first reflector layer, a quantum dot layer, a first limiting layer, a transition layer, a doping layer, a second limiting layer, a second reflector layer, an embossment layer and a second electrode which are sequentially stacked from bottom to top. Proton implantation regions are distributed in the transition layer and the doped layer, the embossment layer comprises an etching region and a non-etching region, and the intersection point of thecenter line of the vertical cavity surface emitting laser and the embossment layer is located in the etching region or the non-etching region. Different modes of lasing of the VCSEL array unit are realized by introducing the offset of the non-coaxial embossment layer, the wavelength of the long-wavelength VCSEL can be adjusted, the manufacturing process is simple, and the problem that the center of a surface embossment needs to be strictly aligned with the center of a VCSEL tabletop in the design and preparation process of an existing surface embossment technology is solved. The invention further provides a manufacturing method of the vertical cavity surface emitting laser with the advantages.

Description

technical field [0001] The present application relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser and a manufacturing method thereof. Background technique [0002] Vertical-cavity surface-emitting laser (Vertical-Cavity Surface-Emitting Laser, referred to as VCSEL) has the advantages of low threshold, high coupling efficiency, high modulation rate, and good stability. , Optical parallel processing, high-speed data communication, etc. are widely used. With the growth of people's demand for information volume and information transmission speed, as well as the demand for gas detection, VCSEL is required to have a wavelength tunable function. [0003] At present, in order to realize the wavelength tunable function of long-wavelength VCSEL, the methods adopted include external cavity tuning, electrothermal tuning, electrostatic force tuning, etc. The main principle is to change the thickness of the air-gap cavity tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/34
CPCH01S5/18308H01S5/34
Inventor 张星
Owner 长春中科长光时空光电技术有限公司
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