This invention relates to antimony-doped multi-elements oxide transparent conductive membrane. On the Zn-Sn-O membrance, antimony doping is proceeded, by using radio-frequency magnetic-control technique, under vacuum condition, to produce Zn-Sn-O:Sb transparent conductive membrane having multi-crystal structure. The ceramic target for sputtering use is composed of zinc oxide stannic oxide, antimony sesquioxide, the prepn. conditions are: argon pressure=0.5-5 Pa, oxygen pressure=0-6 mPa, sputtering power=50-200w, temp.=150-450 deg.C. This inventive complex transparent conductive membrane material has the property of stability in hydrogen plasma like ZnO, and has high electrical stability like SnO2. It has advantages of: no toxicity, broad application field, being substituted for ITO membrane, saving noble metal indium.