Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into

A technology of transparent conductive film and transparent conductive film, which is applied in the field of preparation of multi-oxide transparent conductive film materials, can solve problems such as doping insensitivity, and achieve the effects of high chemical stability, stable electrical performance and broad application prospects.

Inactive Publication Date: 2005-03-30
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the Zn-Sn-O thin film prepared below the substrate temperature of 500°C has an amorphous structure and is not sensitive to doping

Method used

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  • Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into
  • Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into
  • Method for preparing transparent conducting film made from multi-element oxides with antimony being doped into

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Preparation of antimony-doped zinc-tin-oxygen composite transparent conductive film material by radio frequency magnetron sputtering technology. The components of the ceramic target for sputtering are as follows, all in molar parts: 1 part of ZnO, 1 part of SnO 2 2 parts, Sb 2 o 3 , 0.05 parts.

[0037] Each ZnO, SnO 2 and Sb 2 o 3 After the raw materials are ball milled for 2 hours and mixed evenly, they are rolled into blanks with a hydraulic press under a pressure of 60Mpa, and then sintered at 1400°C for 2 hours, cooled to 800°C with electricity, and naturally cooled after turning off the power. Taking glass as the substrate material, the diameter of the target is 6.5 cm, and the distance from the target to the substrate is 5 cm. The Zn-Sn-O:Sb transparent conductive film prepared under the conditions of argon partial pressure 1Pa, oxygen partial pressure 2mP, sputtering power 100W, and substrate temperature 450°C is ZnSnO 3 and SnO 2 phase, the growth rate...

Embodiment 2

[0039] Preparation of antimony-doped zinc-tin-oxygen composite transparent conductive film material by radio frequency magnetron sputtering technology. The components of the ceramic target for sputtering are as follows, all in molar parts: 1 part of ZnO, 1 part of SnO 2 2 parts, Sb 2 o 3 , 0.03 parts.

[0040] The preparation method is the same as in Example 1. The prepared Zn-Sn-O:Sb transparent conductive film is ZnSnO 3 and SnO 2 phase, the resistivity of the film is 5×10 -3 Ωcm, the transmittance in the visible light range exceeds 85%.

Embodiment 3

[0042] Preparation of antimony-doped zinc-tin-oxygen composite transparent conductive film material by radio frequency magnetron sputtering technology. The components of the ceramic target for sputtering are as follows, all in molar parts: 1 part of ZnO, 1 part of SnO 2 2 parts, Sb 2 o 3 , 0.07 parts.

[0043]The preparation method is the same as in Example 1. The prepared Zn-Sn-O:Sb transparent conductive film is ZnSnO 3 and SnO 2 phase, the resistivity of the film is 3×10 -3 Ωcm, the transmittance in the visible light range exceeds 85%.

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Abstract

This invention relates to antimony-doped multi-elements oxide transparent conductive membrane. On the Zn-Sn-O membrance, antimony doping is proceeded, by using radio-frequency magnetic-control technique, under vacuum condition, to produce Zn-Sn-O:Sb transparent conductive membrane having multi-crystal structure. The ceramic target for sputtering use is composed of zinc oxide stannic oxide, antimony sesquioxide, the prepn. conditions are: argon pressure=0.5-5 Pa, oxygen pressure=0-6 mPa, sputtering power=50-200w, temp.=150-450 deg.C. This inventive complex transparent conductive membrane material has the property of stability in hydrogen plasma like ZnO, and has high electrical stability like SnO2. It has advantages of: no toxicity, broad application field, being substituted for ITO membrane, saving noble metal indium.

Description

(1) Technical field [0001] The invention relates to a preparation method of an antimony-doped multi-element oxide transparent conductive film material, belonging to the technical field of electronic materials. (2) Background technology [0002] Oxide transparent conductive film is an important optoelectronic information material. This thin film material not only has a high transmittance in the visible light region, but also has a high reflectivity in the infrared region, and its conductivity is close to the value of metal. Transparent conductive films are mainly used for: transparent electrodes of thin-film solar cells, flat-panel displays and light-emitting devices; transparent electromagnetic shielding and antistatic devices; charge-coupled imaging devices; infrared heat mirrors; touch-sensitive overlays and window heaters for aircraft, etc. . [0003] The currently used transparent conductive film and the existing problems are as follows: [0004] (1) Tin-doped indium o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C23C14/35
Inventor 马瑾黄树来马洪磊
Owner SHANDONG UNIV
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