45 results about "Antimony doping" patented technology

The invention discloses a rare earth based halide scintillator and a preparation method and application thereof, and belongs to the technical field of functional materials. The chemical formula of the rare earth based halide scintillator provided by the invention is RE (DMSO) 8 [Bi < 1-x > Sb < x > Cl6], wherein 0 < x < = 1; rE is a rare earth element; dMSO is a dimethyl sulfoxide ligand. By introducing the DMSO ligand and combining antimony doping, the formed rare earth based halide scintillator has intrinsic high atomic number, no self-absorption rare earth emission, no toxic element and outstanding comprehensive optical performance, so that the antimony-doped rare earth based halide scintillator has good luminescence performance and can be applied to the field of luminescent devices. Particularly, the compound has good fluorescence quantum efficiency and light yield, and has a good application prospect in the fields of detection, imaging or luminescence.

The invention provides a middle-infrared-band low-infrared-emissivity material and a preparation method thereof. The middle-infrared-band low-infrared-emissivity material comprises a low-emissivity composite layer, an anti-rust paint layer and a base layer which are sequentially connected. The low-emissivity composite layer is one of a first low-emissivity layer, a second low-emissivity layer and a second low-emissivity layer; the raw material of the first low-emissivity layer is one or more of polyurethane resin, fluorocarbon resin and epoxy resin; the raw material of the second low-emissivity layer is one of a conductive film and compound slurry; the conductive thin film is one or more of antimony-doped tin oxide, fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide and a silver nanowire transparent thin film. The polyurethane resin provided by the invention can reduce the introduction of oxygen-containing functional groups, so that the polyurethane resin has lower emissivity and good light transmittance in the wave band of 8-14 microns, and the low emissivity of the material can be controlled by regulating and controlling the thickness of the polyurethane resin layer.

The invention discloses a preparation method of a lotus-shaped nano antimony trioxide doped methyl methacrylate polymer film, which comprises the following steps: firstly, preparing a lotus-shaped nano antimony trioxide material, and then taking the prepared lotus-shaped nano antimony trioxide material as a dopant of the methyl methacrylate polymer film to prepare the lotus-shaped nano antimony trioxide doped methyl methacrylate polymer film. And thermally polymerizing a layer of polymer film on the metal substrate. The film layer prepared by the method has high corrosion potential, low corrosion current and large impedance, which indicates that the film layer has good corrosion resistance. The coating can be applied to anticorrosion engineering of surfaces of electrical equipment such as air conditioners, electric water heaters, air conditioners and refrigerators and metal parts of mechanical equipment such as tractors and cranes.

This invention discloses an antimony-doped wide-bandgap zirconium chloride powder-emitting crystal material, its preparation method, and its application. The chemical formula of the powder-emitting crystal material is (C9H). 15 N3)2ZrCl8:Sb 3+ It belongs to the monoclinic crystal system, with space group P21 / c; in the described photoluminescent crystal material, each zirconium atom is coordinated with 8 chlorine atoms to form [ZrCl8]. 4‑ Polyhedral structure, organic cation (C9H) 15 N3) + It is linked to inorganic anions via C–N–H···Cl bonds, forming discrete [ZrCl8]. 4‑ The octahedral structure is replaced by organic cations (C9H). 15 N3) + Complete isolation is achieved, forming a zero-dimensional ionic crystal structure. This invention overcomes the problems of single luminescent center, limited emission wavelength, and insufficient luminescence intensity in undoped zirconium-based chlorides by introducing antimony. Antimony, as an effective luminescent center, can promote the radiative recombination process and achieve high-brightness broadband emission.

The invention relates to the technical field of photovoltaic cells, in particular to a back contact crystalline silicon cell and a preparation method thereof. A back contact crystalline silicon cell comprises a silicon substrate layer, a composite layer, a tunneling oxide layer, a second passivation layer, a composite doped silicon layer and a back electrode layer. A composite layer is arranged on the first surface of the silicon substrate layer; a tunneling oxide layer is arranged on the second surface; a second passivation layer is arranged on the surface of the tunneling oxide layer; a composite doped silicon layer is arranged on the surface of the second passivation layer, and the composite doped silicon layer comprises a first antimony doped layer, a phosphorus-antimony doped layer and a second antimony doped layer which are sequentially stacked in the direction from the silicon substrate layer to the second passivation layer; and a back electrode layer is arranged on the surface of the composite doped silicon layer. According to the back contact crystalline silicon cell, the contact resistivity of the back electrode can be reduced, the service life of a carrier is prolonged, accurate adaptation of the doping structure and the BC interdigital electrode is achieved, back side parasitism is reduced, the preparation process can be simplified, the cost is reduced, and the long-term reliability of the cell and the conversion efficiency of the cell are improved.

This invention discloses a terahertz band optical comb frequency converter, belonging to the field of frequency conversion technology. The frequency converter includes an optical fiber interface, an optical fiber focusing lens, a frequency converter chip, a hemispherical silicon lens, and an electrical interface. The frequency converter chip includes antenna electrodes, a photoconductor, and an InP substrate. An external 1560nm femtosecond optical comb signal sequentially passes through the optical fiber interface and the optical fiber focusing lens onto the frequency converter chip; simultaneously, an external terahertz signal under test passes through the hemispherical silicon lens onto the frequency converter chip. The antenna electrodes and the electrical interface are connected by a circuit. This invention offers a wider response bandwidth: the response bandwidth is increased through the design of internal defects in the photoconductor; higher sensitivity: the sensitivity of the frequency converter is improved through antimony doping and tungsten oxide thin film design; and higher reliability: the tungsten oxide thin film design and special protection design of the antenna electrodes can respectively avoid damage to the frequency converter caused by optical and electrical signals, thereby improving reliability and service life.

The invention discloses a 2.5-dimensional antimony-doped tin dioxide / polyurethane-ruthenium-titanium mixed oxide / polymer temperature response type electrocatalytic oxidation electrode and a preparation method, and belongs to the technical field of electrocatalytic oxidation electrode preparation. Amorphous antimony-doped tin dioxide is loaded on molecular sieve particles in a hydrolytic polycondensation reaction and annealing mode; coating a thermal expansion layer formed by polyurethane on the surface to obtain auxiliary electrode particles; bonding a ruthenium-titanium mixed oxide layer on the porous titanium substrate, and then spraying a polymer layer formed by an N-isopropylacrylamide-acrylic acid copolymer to obtain a main electrode; suspending the auxiliary electrode particles on the main electrode, then standing, reducing the diameter of a surface pore channel, close to the auxiliary electrode particles, of the main electrode, heating and expanding a thermal expansion layer, close to one end of the main electrode, of the auxiliary electrode particles, and finally locking the thermal expansion layer in the pore channel of the main electrode to obtain the temperature response type electrocatalytic oxidation electrode. The main electrode and the particle auxiliary electrode are fully and stably combined, the electrode composition structure is endowed with the dynamic self-adaptive adjustment capability, the traditional electrode composition / structure adjustment limitation is overcome, and the in-situ adjustable performance and the in-situ material recovery characteristic are achieved.

Fuel cell separator, which comprises on a substrate: a composite film comprising an antimony-doped tin oxide and a tin-doped indium oxide, wherein an elemental ratio of tin to indium (Sn / In) in the composite film is 1.4 or less, and The composite film contains 30 to 60 vol.% of antimony-doped tin oxide.

The application discloses a preparation method of a fluorinated antimony-doped passivated lead sulfide quantum dot active layer, and the preparation method comprises the following steps: preparing an iodine-bromine-wrapped lead sulfide colloidal quantum dot film; dissolving fluorinated antimony in acetonitrile to obtain a fluorinated antimony acetonitrile solution; soaking the iodine-bromine-wrapped lead sulfide colloidal quantum dot film in the fluorinated antimony acetonitrile solution; and washing the iodine-bromine-wrapped lead sulfide colloidal quantum dot film with acetonitrile for a preset number of times to obtain a fluorinated antimony chemical reaction-doped passivated lead sulfide quantum dot active layer. The application can improve the overall performance of a semiconductor device containing an active layer.

The invention provides an electrode based on a silazane functionalized ruthenium complex and a preparation method and application thereof, the electrode comprises a conductive substrate, a nano-ATO film deposited on the surface of the conductive substrate and a catalyst 2C-tds in bond connection with the nano-ATO film, and the nano-ATO film is composed of nano-porous antimony doped tin oxide; the chemical formula of the catalyst 2C-tds is Ru (tds) (2-(4-pyridylethyl) silazane) (4-methylpyridine), and the catalyst 2C-tds and hydroxyl on the surface of the nano ATO film form a Si-O covalent bond through a silazane group. The electrode has the advantages of stable structure, high catalytic activity and the like, and can efficiently catalyze water oxidation reaction.

The invention discloses a heterojunction battery and a preparation method thereof, and the heterojunction battery comprises the components of a silicon wafer which is an N-type silicon wafer and comprises a first surface and a second surface which are oppositely arranged; the first intrinsic layer and the N-type doped layer are sequentially stacked on the first surface; the second intrinsic layer and the P-type doped layer are sequentially stacked on the second surface; the first transparent conductive layer is laminated on the N-type doped layer; the second transparent conductive layer is laminated on the P-type doped layer; the first electrode is in electric contact with the first transparent conductive layer; the second electrode is in electric contact with the second transparent conductive layer; doping elements in the N-type doping layer comprise an antimony element, and the doping concentration of the antimony element is 1E18 cm <-3 >-2.5 E20 cm <-3 >. According to the invention, the effective doping concentration of the N-type doping layer can be ensured, the ultraviolet induced degradation risk of the heterojunction cell is reduced, and the energy band alignment precision of the heterojunction is ensured.

The application discloses a kind of antimony-doped tin dioxide transparent conductive film and preparation method thereof.The preparation method of the film includes the following steps: (1) using vacuum evaporation method to form tin / antimony / tin layered sandwich structure metal film on the surface of substrate;(2) the metal film prepared in step (1) is used as working electrode, and platinum electrode is used as counter electrode for electrolysis;(3) the metal film after electrolysis is taken out for cleaning, and then annealing treatment is carried out, to obtain the antimony-doped tin dioxide transparent conductive film.The application obtains tin dioxide film by vacuum evaporation of tin and antimony metal, and obtains transparent conductive tin dioxide film after high-temperature annealing.The sheet resistance of the film can reach 198Ω / □, and the light transmittance can reach more than 70% after the film is doped with antimony.The application has the advantages of good universality, low equipment requirement, simple preparation and good repeatability, and has good popularization value.

The invention discloses a powder light emitting crystal material of antimony-doped wide bandgap zirconium-based chloride and a preparation method and application of the powder light emitting crystal material, the chemical formula of the powder light emitting crystal material is (C9H15N3) 2ZrCl8: Sb < 3 + >, the powder light emitting crystal material belongs to a monoclinic system, and the space group is P21 / c; in the powder light emitting crystal material, each zirconium atom is coordinated with eight chlorine atoms to form a [ZrCl8] < 4-> polyhedral structure, organic cations (C9H15N3) < + > are connected with inorganic anions through C-N-H... Cl bonds, and the discrete [ZrCl8] < 4-> octahedral structure is completely isolated by the organic cations (C9H15N3) < + > to form a zero-dimensional ion crystal structure. According to the invention, the antimony element is introduced to overcome the problems of single luminescence center, limited emission wavelength and insufficient luminescence intensity of undoped zirconium-based chloride, and antimony is used as an effective luminescence center to promote the radiation recombination process and realize high-brightness wide-spectrum emission.

The present application relates to the technical field of single crystal silicon doping, and particularly relates to a multi-stage antimony evaporation coefficient optimization method applied to a single crystal silicon antimony doping process, comprising: obtaining process operation parameters of each process stage and inputting the process operation parameters into an antimony evaporation coefficient simulation quantization space to obtain a first antimony evaporation coefficient corresponding to the process stage; obtaining a single crystal furnace structure feature and correcting the first antimony evaporation coefficient based on the single crystal furnace structure feature to obtain a second antimony evaporation coefficient; and taking an antimony content design requirement of a single crystal silicon product as a target, determining a doping ratio of each process stage according to pre-obtained antimony dopant purity information and the second antimony evaporation coefficient of each process stage. The method can comprehensively consider various influencing factors and accurately optimize, and can effectively reduce product quality fluctuations caused by inaccurate antimony evaporation coefficient control and unreasonable doping ratio.

The invention discloses an antimony-doped lanthanum oxide nanowire and a preparation method and application thereof.The preparation method of the antimony-doped lanthanum oxide nanowire comprises the steps that S1, precursor suspension liquid is prepared, specifically, an antimony salt solution is slowly added into a lanthanum salt solution, and uniform mixing is conducted; adding an alkaline precipitant to adjust the pH value of the solution to generate a mixed precipitate, and performing ultrasonic dispersion to obtain a uniform precursor suspension; s2, carrying out hydrothermal reaction; s3, washing and drying the precipitate generated by the reaction to obtain an antimony-doped lanthanum oxide nanowire precursor; and calcining to obtain the antimony-doped lanthanum oxide nanowire. The invention also discloses the antimony-doped lanthanum oxide nanowire prepared by the method and application of the antimony-doped lanthanum oxide nanowire in an all-solid-state lithium metal battery based on sulfide electrolyte. The Sb-doped lanthanum oxide nanowire modified layer can effectively improve the stability of the lithium metal negative electrode in a sulfide electrolyte, inhibit the growth of lithium dendrites, reduce the side reaction of an interface, and improve the cycle life and rate capability of the all-solid-state lithium metal battery.

The application discloses preparation and application of antimony-doped manganese-based organic-inorganic metal chloride luminescent material. The preparation method is an anti-solvent method, and the chemical formula of the obtained crystal material is (TTPhP)2MnCl4:Sb 3+ (TTPhP + =C 24 H 20 P + , which is a tetraphenylphosphonium cation), wherein 0.00028 The application has the advantages of low cost, simple and environment-friendly method, enriched luminescent properties of manganese-based organic-inorganic metal halide through antimony doping, improved fluorescence quantum yield, solved single-component organic-inorganic metal halide luminescence single problem, and good application prospect in luminescent information anti-counterfeiting and self-referencing calorimeter preparation. The material can also emit green light under X-rays excitation and has good temperature thermal stability, which widens the application field of organic-inorganic metal luminescent halide, and makes the material also have good application in scintillators.

The application belongs to the technical field of lithium / sodium ion battery preparation, and discloses a preparation method of antimony-doped graphite-phase carbon nitride composite material, which comprises the following steps: 1) Sb2O3 powder is added into hot tartaric acid to prepare a solution; 2) g-C3N4 powder is added into the solution in step 1) and stirred to be uniformly mixed, and then dried into yellow block-shaped solid; 3) the yellow block-shaped solid is placed into a tube furnace, carbonized at 600 DEG C to 800 DEG C for 1 to 6 hours in an inert gas environment, and antimony-doped graphite-phase carbon nitride composite material is obtained. The composite material obtained by the method exhibits excellent rate performance and stable performance cycle when applied in lithium / sodium ion batteries, and the material has very high commercial value.

The invention discloses a manufacturing method of an electrode for electrocatalytic reduction of nitrate, an electrode product and application, and belongs to the technical field of electrochemical water treatment in environmental engineering. The titanium-based cobalt-doped tin dioxide electrode with the double-layer structure is prepared by adopting a sol-gel-step heat treatment method, the bottom layer is an antimony-containing cobalt tin oxide conductive layer, the surface layer is an antimony-free cobalt tin oxide catalytic layer, and the molar ratio of tin to cobalt in the two layers is (5: 1)-(7: 1). The long-standing technical prejudice that a titanium-based antimony-doped tin dioxide electrode can only be used for anodic oxidation and cannot be used for cathode nitrate reduction in the field is overcome, the Faraday efficiency of the prepared electrode in high-concentration nitrate wastewater of 1000 mg / L is as high as 97.2%, the ammonia nitrogen selectivity is 99.3%, the performance degradation is only 6.3% after continuous operation for 500 h, and the prepared electrode has a good application prospect. The catalyst has high catalytic activity, high product selectivity and long-term operation stability, is suitable for treatment of various nitrate-polluted water bodies, and can synchronously realize harmless treatment of pollutants and resource recovery of ammonia nitrogen.

A coated article includes a substrate and a coating applied over at least a portion of the substrate. The coating includes at least one metallic layer formed from one or more silver compounds doped with at least one metal selected from Groups 3 to 15 of the periodic table of the elements. Also disclosed are capsules that can absorb electromagnetic energy as well as a process of forming an antimony-doped tin oxide coating layer.

The invention discloses an antimony-doped bismuth nanosheet, a preparation method thereof and an electrochemical sensor, and belongs to the technical field of electrochemical sensing. The composition of the antimony doped bismuth nanosheet is expressed as xSb-Bi NS, wherein x is 1%-5% and represents the doping proportion of Sb. The antimony-doped bismuth nanosheet has higher structural stability and electro-catalytic performance, and when the antimony-doped bismuth nanosheet is used for modifying a working electrode of an electrochemical sensor, the electrochemical sensor has high sensitivity, high selectivity, high stability and low detection limit when multiple metal ions such as Zn (II), Cd (II) and Pb (II) are detected at the same time.

The invention discloses a high-aging-resistance laser-weldable PCPBT composite material and a preparation method of the high-aging-resistance laser-weldable PCPBT composite material, and belongs to the technical field of polymer composite material processing. And a laser absorption compound with a gradient dispersion structure, namely a compound of nano-coated antimony-doped tin dioxide and micron indium tin oxide, a compound compatilizer, namely a compound of maleic anhydride grafted PC and an epoxy functionalized copolymer, and an antioxidant-light stable synergistic compound and a functional additive are supplemented. The preparation method comprises the steps of pretreatment, pre-reaction mixing, melt blending and granulation. The material is excellent in compatibility, stable in 808-1064nm laser absorption, reliable in welding and outstanding in aging resistance, is suitable for automobile electrical shells, electronic equipment shells, charging pile parts and other scenes, and has remarkable practical value.

The invention discloses a method for carrying out antimony-doped epitaxy on a silicon substrate, and belongs to the technical field of semiconductor manufacturing. According to the method, in an epitaxial CVD reaction furnace, epitaxial growth is carried out on the surface of a silicon substrate by introducing a silicon source-containing gas and an antimony-doped mixed gas containing SbH3 and SbCl3 into a reaction chamber. According to the invention, the synergistic effect of SbH3 and SbCl3 in the epitaxial process is utilized, SbCl3 can inhibit gas phase predecomposition of SbH3, and the doping uniformity is improved; meanwhile, hydrogen generated by decomposition of SbH3 can neutralize chlorine free radicals generated by SbCl3, etching of the chlorine free radicals on the silicon surface is relieved, and therefore the antimony-doped epitaxial layer high in uniformity, low in defect density and excellent in surface quality is obtained in a wide process window. The method can be suitable for conventional CVD epitaxial equipment, even suitable for large-size epitaxy such as 12 inches, and can be easily integrated to an existing production line.

The invention relates to the technical field of semiconductor preparation, in particular to antimony-doped N-type monocrystalline silicon and a preparation method and application thereof. The preparation method comprises the following steps: S1, melting: heating a polycrystalline silicon raw material in an argon environment to melt the polycrystalline silicon raw material, and adding an antimony dopant for multiple times in the melting process to obtain a silicon melt; and S2, crystal growth: adopting a seed crystal consistent with the target crystal orientation to contact the silicon melt for seeding, and then carrying out shouldering, equal-diameter growth, ending, cooling and annealing treatment to obtain the single crystal silicon rod. According to the silicon single crystal rod prepared by the method, the axial resistivity fluctuation is less than or equal to 3%, the radial resistivity fluctuation is less than or equal to 5%, the dislocation density is less than or equal to 100cm <-2 >, and the silicon single crystal rod has excellent axial resistivity uniformity and radial resistivity uniformity, and is low in dislocation density, low in oxygen content and long in minority carrier lifetime.

An electrophotographic photoreceptor includes: a conductive substrate; a photosensitive layer; and a protective layer. The photosensitive layer includes a charge generating agent and a hole transporting agent. The protective layer is a top surface layer of the electrophotographic photoreceptor. The protective layer includes a tin oxide particle and an alumina particle. A content of the tin oxide particle is greater than a content of the alumina particle. The tin oxide particle is favorably a phosphorus-doped tin oxide particle or an antimony-doped tin oxide particle.

The invention relates to the technical field of monocrystalline silicon doping, in particular to a multi-stage antimony volatilization coefficient optimization method applied to a monocrystalline silicon antimony doping process, which comprises the following steps: acquiring process operation parameters of each process stage, and inputting the process operation parameters into an antimony volatilization coefficient simulation quantization space to obtain a first antimony volatilization coefficient corresponding to the process stage; obtaining structural characteristics of the single crystal furnace, and performing thermal field influence correction on the first antimony volatilization coefficient based on the structural characteristics of the single crystal furnace to obtain a second antimony volatilization coefficient; and with the antimony content design requirement of the monocrystalline silicon product as a target, determining the doping ratio of each process stage according to the pre-obtained purity information of the antimony dopant and the second antimony volatilization coefficient of each process stage. According to the method, various influence factors can be comprehensively considered and accurately optimized, and product quality fluctuation caused by inaccurate antimony volatilization coefficient control and unreasonable doping ratio can be effectively reduced.

This invention discloses a highly stable MEMS hydrogen sensor and its fabrication method. The highly stable MEMS hydrogen sensor is a semiconductor resistive hydrogen sensor based on a metal oxide gas-sensitive coating, comprising, from bottom to top, a silicon nitride support layer, a Pt / Ti heating electrode and sensing electrode, a silicon nitride isolation layer, and a metal oxide gas-sensitive thin film. The metal oxide is high-purity antimony-doped tin dioxide, tetraaminopalladium nitrate, and tetraammineplatinum nitrate. High-purity antimony-doped tin dioxide, tetraaminopalladium nitrate, and tetraammineplatinum nitrate powders are mixed and then used to prepare a gas-sensitive slurry using a mixed solution of terpineol, diethylene glycol butyl ether acetate, ethyl cellulose, dibutyl phthalate, and dioctyl phthalate. The gas-sensitive slurry is dotted onto the central interdigitated electrode region of a MEMS chip, and after vacuum standing and slow heating, the sensor is obtained. This sensor has a low detection limit and stable resolution after high humidity aging.

An ATO-coated silver powder composite material is provided, comprising ATO and silver powder. The ATO is coated on the surface of the silver powder in the form of a coating layer with a thickness of 3–5 nm. The silver powder is in flake form with a diameter of 6–20 μm and a thickness of 0.1 μm–0.2 μm. The mass ratio of ATO to silver powder ranges from (5:95) to (20:80). The diameter of the silver powder is 8–12 μm. The ATO powder is antimony-doped tin oxide, wherein the antimony doping content is 1–20% by mass. The composite material is obtained by stirring and mixing surface-treated silver powder with an ATO coating liquid. It has infrared emissivity, low optical gloss, and low reflectivity. As a low-emissivity filler, its application in infrared stealth coatings can effectively reduce the amount of optical pigments / dyes used, achieving compatibility with visible light stealth, resulting in an ultra-low emissivity coating compatible with optical-infrared camouflage.

This invention provides a back-contact solar cell, its fabrication method, and its application, relating to the field of photovoltaic technology. Specifically, the back side of the back-contact solar cell of this invention includes n... + Back contact area, and the n + The back contact region includes a gradient-doped antimony layer and a molybdenum dioxide buffer layer. Compared with the p-doped traditional BC battery, this invention achieves significant improvements in minority carrier lifetime, contact resistance, and battery efficiency. Furthermore, by combining gradient antimony doping with the molybdenum dioxide buffer layer, it breaks through the efficiency-cost balance of BC batteries, reducing mass production costs and modification expenses, thus exhibiting excellent photovoltaic performance and practical value.

The application belongs to the field of material preparation, and discloses a preparation method of antimony-doped cadmium telluride target material, which comprises the following steps: (1) uniformly mixing CdTe powder and Sb2Te3 powder, wherein the proportion of Sb2Te3 powder is 0.5-10 wt%; (2) performing heating reaction on the uniformly mixed powder to obtain the antimony-doped cadmium telluride target material; the heating reaction is specifically as follows: stage one: under vacuum condition, heating to 300-400 DEG C, and keeping warm for 30-50 min; stage two: under vacuum condition, heating to 550-600 DEG C, and keeping warm for 60-90 min, and after heating to the highest temperature, the pressure is increased to 80-90 Mpa, and the pressure is kept until the keeping warm time ends. The cadmium telluride doped target material is prepared by vacuum hot-pressing sintering, the process flow is short, the operation is simple, the oxygen content of the obtained cadmium telluride doped target material is low, and the target material has high relative density.

The invention discloses a method for determining the antimony doping amount of N-type monocrystalline silicon, and the method carries out the following operations for the same coil obtaining the charging completion time of the last charging barrel of the current section, and recording the time as first time; in response to the fact that the coil base is subjected to first-time wire breakage and silicon materials are not added, the first-time wire breakage occurrence time is obtained and recorded as second time; and recording the time interval between the second time and the first time as a first time interval, and determining the first antimony doping amount according to the first time interval, the remaining amount in the crucible and the target resistivity in response to the fact that the first time interval is greater than a first preset time difference. The invention also provides corresponding electronic equipment, a system and a program product. According to the method, the antimony doping amount can be accurately determined.