78 results about "Antimony doping" patented technology

The invention discloses a phosphorus-antimony co-doped monocrystalline silicon rod, a preparation method and application, in the phosphorus-antimony co-doped monocrystalline silicon rod, the antimony element concentration is 2.3 * 10 < 16 > atoms / cm < 3 >-1.17 * 10 < 14 > atoms / cm < 3 >, and the phosphorus element concentration is 7.66 * 10 < 15 > atoms / cm < 3 >-3.9 * 10 < 13 > atoms / cm < 3 >. According to the embodiment of the invention, the silicon single crystal rod is doped with the phosphorus element and the antimony element at the same time, and when only the phosphorus element is doped in the silicon single crystal rod, the resistivity of the obtained silicon single crystal rod is usually high at the head and low at the tail; when only the antimony element is doped in the single crystal silicon rod, due to the fact that antimony is extremely volatile, the controllability of antimony doping in the preparation process is relatively low, and the resistivity is prone to occurrence of the conditions that the head is low and the tail is high, and therefore the difference of the resistivity of the single crystal silicon rod can be reduced through co-doping of phosphorus and antimony in the implementation mode of the application.

The invention provides a silicon single crystal rod resistance control method, a silicon single crystal rod, a silicon wafer and a solar cell. The control method comprises the following steps: obtaining phosphorus concentration and antimony concentration in a compound feed; obtaining the phosphorus concentration and the antimony concentration in the residual material in the crucible; calculating the concentration of phosphorus in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the phosphorus concentration in the re-fed material and the residual material in the crucible, and calculating the concentration of antimony in the re-fed material and the residual material in the crucible in the total weight of the full pot at the current feeding section according to the antimony concentration in the re-fed material and the residual material in the crucible; calculating phosphorus demand concentration according to the phosphorus concentration ratio, and calculating antimony demand concentration according to the antimony concentration ratio; calculating the doping amount of the phosphorus master alloy according to the phosphorus demanded concentration, the total weight of the full pot of the current feeding section and the concentration of the phosphorus master alloy, and calculating the antimony doping amount according to the antimony demanded concentration and the total weight of the full pot of the current feeding section. According to the control method provided by the invention, the doping amount of the phosphorus master alloy and the antimony can be accurately calculated, so that the accurate control on the resistance of the silicon single crystal rod is realized, and the silicon single crystal rod and the silicon wafer have excellent resistance uniformity.

The invention discloses a rare earth based halide scintillator and a preparation method and application thereof, and belongs to the technical field of functional materials. The chemical formula of the rare earth based halide scintillator provided by the invention is RE (DMSO) 8 [Bi < 1-x > Sb < x > Cl6], wherein 0 < x < = 1; rE is a rare earth element; dMSO is a dimethyl sulfoxide ligand. By introducing the DMSO ligand and combining antimony doping, the formed rare earth based halide scintillator has intrinsic high atomic number, no self-absorption rare earth emission, no toxic element and outstanding comprehensive optical performance, so that the antimony-doped rare earth based halide scintillator has good luminescence performance and can be applied to the field of luminescent devices. Particularly, the compound has good fluorescence quantum efficiency and light yield, and has a good application prospect in the fields of detection, imaging or luminescence.

The invention relates to an antimony-doped tin dioxide-vanadium dioxide composite film and a preparation method thereof. The antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention is provided with an amorphous substrate layer, an antimony-doped tin dioxide middle layer and a vanadium dioxide film layer, wherein the antimony-doped tin dioxide middle layer is a SnO2 film doped with Sb2O3. The antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention has an obvious semiconductor-metal conversion effect and a thermochromic effect, and the phase change temperature is reduced. According to the preparation method of the antimony-doped tin dioxide-vanadium dioxide composite film disclosed by the invention, the antimony-doped tin dioxide film is introduced as a middle buffer layer, and the vanadium dioxide film is grown on the antimony-doped tin dioxide film in situ. As a result, the deposition temperature at the time of growing the vanadium dioxide thin film can be reduced.

The invention discloses a high-stability MEMS hydrogen sensor and a preparation method thereof. The high-stability MEMS hydrogen sensor is a semiconductor resistance type hydrogen sensor based on a metal oxide gas sensitive coating and sequentially comprises a silicon nitride supporting layer, a Pt / Ti heating electrode, a sensing electrode, a silicon nitride isolating layer and a metal oxide gas sensitive film from bottom to top. The metal oxides are high-purity antimony doped tin dioxide, tetraamino palladium nitrate and tetraammineplatinum nitrate. The preparation method comprises the following steps: mixing high-purity antimony-doped tin dioxide powder, tetraamino palladium nitrate powder and tetraammineplatinum nitrate powder, preparing gas-sensitive slurry from a mixed solution of terpilenol, diethylene glycol butyl ether acetate, ethyl cellulose, dibutyl phthalate and dioctyl phthalate, dispensing the gas-sensitive slurry on a central interdigital electrode area of an MEMS chip, and performing vacuum drying to obtain the gas-sensitive MEMS chip. And performing vacuum standing and slow heating to obtain the sensor. The sensor is low in detection lower limit and stable in resolution ratio after high-humidity aging.

The invention provides a method for preparing a high-efficiency copper indium gallium sulfur selenium solar cell based on antimony doping by a solution method. The method comprises the following steps: preparing precursor solutions with different antimony doping concentrations; performing spin-coating annealing on the precursor solution for multiple times to obtain a precursor film; through selenylation, a micron-sized CIGS absorption layer penetrating through crystal grains up and down is obtained; and depositing a buffer layer, a window layer and a top electrode to prepare the antimony-doped CIGS thin film solar cell. According to the method for preparing the efficient copper-indium-gallium-sulfur-selenium solar cell by doping antimony based on the solution method, the metal antimony salts with different concentrations are added into the precursor solution, so that the micron-sized penetrating high-quality absorption layer is prepared, and the corresponding cell performance of the solar cell prepared based on the method is obviously improved.

The invention belongs to the field of new energy storage batteries, and relates to a preparation method of a high-conductivity antimony-doped lithium iron phosphate positive electrode material, which comprises the following steps: 1, mixing and stirring a certain amount of antimony source and a phosphoric acid solution to obtain an acidified antimony source solution A; 2, carrying out hydrothermal reaction on the solution A, and washing to obtain an antimony-phosphorus product; 3, mixing and stirring the lithium source solution B and the antimony-phosphorus product to form a solution C; 4, mixing the solution C, a carbon source, iron phosphate and deionized water into slurry; 5, sanding the obtained slurry to a certain particle size, and then carrying out spray drying; and 6, calcining the dried lithium iron phosphate in an inert gas atmosphere, cooling to room temperature, and crushing and sieving the material to obtain the antimony-doped lithium iron phosphate material. The electrode material prepared by the method provided by the invention can be applied to a positive electrode material of a battery, and the antimony-doped lithium iron phosphate positive electrode material has proper specific surface area and high conductivity, so that the electrochemical performance of the positive electrode material is obviously improved.

The invention provides a middle-infrared-band low-infrared-emissivity material and a preparation method thereof. The middle-infrared-band low-infrared-emissivity material comprises a low-emissivity composite layer, an anti-rust paint layer and a base layer which are sequentially connected. The low-emissivity composite layer is one of a first low-emissivity layer, a second low-emissivity layer and a second low-emissivity layer; the raw material of the first low-emissivity layer is one or more of polyurethane resin, fluorocarbon resin and epoxy resin; the raw material of the second low-emissivity layer is one of a conductive film and compound slurry; the conductive thin film is one or more of antimony-doped tin oxide, fluorine-doped tin oxide, indium tin oxide, aluminum-doped zinc oxide and a silver nanowire transparent thin film. The polyurethane resin provided by the invention can reduce the introduction of oxygen-containing functional groups, so that the polyurethane resin has lower emissivity and good light transmittance in the wave band of 8-14 microns, and the low emissivity of the material can be controlled by regulating and controlling the thickness of the polyurethane resin layer.

The invention discloses a preparation method of a lotus-shaped nano antimony trioxide doped methyl methacrylate polymer film, which comprises the following steps: firstly, preparing a lotus-shaped nano antimony trioxide material, and then taking the prepared lotus-shaped nano antimony trioxide material as a dopant of the methyl methacrylate polymer film to prepare the lotus-shaped nano antimony trioxide doped methyl methacrylate polymer film. And thermally polymerizing a layer of polymer film on the metal substrate. The film layer prepared by the method has high corrosion potential, low corrosion current and large impedance, which indicates that the film layer has good corrosion resistance. The coating can be applied to anticorrosion engineering of surfaces of electrical equipment such as air conditioners, electric water heaters, air conditioners and refrigerators and metal parts of mechanical equipment such as tractors and cranes.

This invention discloses an antimony-doped wide-bandgap zirconium chloride powder-emitting crystal material, its preparation method, and its application. The chemical formula of the powder-emitting crystal material is (C9H). 15 N3)2ZrCl8:Sb 3+ It belongs to the monoclinic crystal system, with space group P21 / c; in the described photoluminescent crystal material, each zirconium atom is coordinated with 8 chlorine atoms to form [ZrCl8]. 4‑ Polyhedral structure, organic cation (C9H) 15 N3) + It is linked to inorganic anions via C–N–H···Cl bonds, forming discrete [ZrCl8]. 4‑ The octahedral structure is replaced by organic cations (C9H). 15 N3) + Complete isolation is achieved, forming a zero-dimensional ionic crystal structure. This invention overcomes the problems of single luminescent center, limited emission wavelength, and insufficient luminescence intensity in undoped zirconium-based chlorides by introducing antimony. Antimony, as an effective luminescent center, can promote the radiative recombination process and achieve high-brightness broadband emission.

The invention relates to the technical field of photovoltaic cells, in particular to a back contact crystalline silicon cell and a preparation method thereof. A back contact crystalline silicon cell comprises a silicon substrate layer, a composite layer, a tunneling oxide layer, a second passivation layer, a composite doped silicon layer and a back electrode layer. A composite layer is arranged on the first surface of the silicon substrate layer; a tunneling oxide layer is arranged on the second surface; a second passivation layer is arranged on the surface of the tunneling oxide layer; a composite doped silicon layer is arranged on the surface of the second passivation layer, and the composite doped silicon layer comprises a first antimony doped layer, a phosphorus-antimony doped layer and a second antimony doped layer which are sequentially stacked in the direction from the silicon substrate layer to the second passivation layer; and a back electrode layer is arranged on the surface of the composite doped silicon layer. According to the back contact crystalline silicon cell, the contact resistivity of the back electrode can be reduced, the service life of a carrier is prolonged, accurate adaptation of the doping structure and the BC interdigital electrode is achieved, back side parasitism is reduced, the preparation process can be simplified, the cost is reduced, and the long-term reliability of the cell and the conversion efficiency of the cell are improved.

This invention discloses a terahertz band optical comb frequency converter, belonging to the field of frequency conversion technology. The frequency converter includes an optical fiber interface, an optical fiber focusing lens, a frequency converter chip, a hemispherical silicon lens, and an electrical interface. The frequency converter chip includes antenna electrodes, a photoconductor, and an InP substrate. An external 1560nm femtosecond optical comb signal sequentially passes through the optical fiber interface and the optical fiber focusing lens onto the frequency converter chip; simultaneously, an external terahertz signal under test passes through the hemispherical silicon lens onto the frequency converter chip. The antenna electrodes and the electrical interface are connected by a circuit. This invention offers a wider response bandwidth: the response bandwidth is increased through the design of internal defects in the photoconductor; higher sensitivity: the sensitivity of the frequency converter is improved through antimony doping and tungsten oxide thin film design; and higher reliability: the tungsten oxide thin film design and special protection design of the antenna electrodes can respectively avoid damage to the frequency converter caused by optical and electrical signals, thereby improving reliability and service life.

The invention discloses a 2.5-dimensional antimony-doped tin dioxide / polyurethane-ruthenium-titanium mixed oxide / polymer temperature response type electrocatalytic oxidation electrode and a preparation method, and belongs to the technical field of electrocatalytic oxidation electrode preparation. Amorphous antimony-doped tin dioxide is loaded on molecular sieve particles in a hydrolytic polycondensation reaction and annealing mode; coating a thermal expansion layer formed by polyurethane on the surface to obtain auxiliary electrode particles; bonding a ruthenium-titanium mixed oxide layer on the porous titanium substrate, and then spraying a polymer layer formed by an N-isopropylacrylamide-acrylic acid copolymer to obtain a main electrode; suspending the auxiliary electrode particles on the main electrode, then standing, reducing the diameter of a surface pore channel, close to the auxiliary electrode particles, of the main electrode, heating and expanding a thermal expansion layer, close to one end of the main electrode, of the auxiliary electrode particles, and finally locking the thermal expansion layer in the pore channel of the main electrode to obtain the temperature response type electrocatalytic oxidation electrode. The main electrode and the particle auxiliary electrode are fully and stably combined, the electrode composition structure is endowed with the dynamic self-adaptive adjustment capability, the traditional electrode composition / structure adjustment limitation is overcome, and the in-situ adjustable performance and the in-situ material recovery characteristic are achieved.

Fuel cell separator, which comprises on a substrate: a composite film comprising an antimony-doped tin oxide and a tin-doped indium oxide, wherein an elemental ratio of tin to indium (Sn / In) in the composite film is 1.4 or less, and The composite film contains 30 to 60 vol.% of antimony-doped tin oxide.

The present invention discloses a method for preparing a homojunction-based ultraviolet exciton polarized light-emitting diode constructed based on antimony-doped p-type zinc oxide (p-ZnO:Sb) micrometer wire and an n-type ZnO film, including a method for preparing a p-type ZnO micrometer wire and constructing a light-emitting diode. The present invention uses high-quality p-ZnO:Sb micrometer wires with a hexagonal cross-section, combined with an n-ZnO film (n-ZnO substrate) to construct a ultraviolet light-emitting diode based on a ZnO homojunction. This light-emitting diode emits stable ultraviolet light under forward bias. Since the p-ZnO:Sb micrometer wire has high crystal quality and a naturally formed resonant cavity, the photons generated by the radiation recombination of electrons and holes interact with the excitons by coupling, showing typical exciton polarized light-emitting characteristics. The homogeneous structure used in the ultraviolet light-emitting diode provided by the present invention avoids the problems of lattice mismatch in traditional heterojunction-based devices, and exhibits good spectral stability and higher luminous efficiency.

The application discloses a preparation method of a fluorinated antimony-doped passivated lead sulfide quantum dot active layer, and the preparation method comprises the following steps: preparing an iodine-bromine-wrapped lead sulfide colloidal quantum dot film; dissolving fluorinated antimony in acetonitrile to obtain a fluorinated antimony acetonitrile solution; soaking the iodine-bromine-wrapped lead sulfide colloidal quantum dot film in the fluorinated antimony acetonitrile solution; and washing the iodine-bromine-wrapped lead sulfide colloidal quantum dot film with acetonitrile for a preset number of times to obtain a fluorinated antimony chemical reaction-doped passivated lead sulfide quantum dot active layer. The application can improve the overall performance of a semiconductor device containing an active layer.

An anode material for an aqueous calcium ion battery and an aqueous calcium ion battery. The anode material for the aqueous calcium ion battery includes nitrogen and antimony co-doped graphene that can reversibly chemisorb / desorb cations Ca<supgt;2+< / supgt> that make up calcium salts, and the graphene is monolayer graphene; the nitrogen doping content of the nitrogen and antimony co-doped graphene is 6.94 at%, and the antimony doping content is 0.74 at%. The monolayer rate of the monolayer graphene is ≥90%. The specific doping structure of the nitrogen and antimony co-doped graphene anode material for the aqueous calcium ion battery of the present invention also combines the pseudocapacitance effect brought about by the doping of nitrogen and antimony heteroelements. It has chemisorption at specific sites, generating good pseudocapacitive Ca<supgt;2+< / supgt> storage capacity; in addition to having a high capacity, this material also has a high power density, with an energy density of 2.16 Whkg<supgt;‑1< / supgt> and a power density of 777.6 Wkg<supgt;‑1< / supgt>.

The invention provides an electrode based on a silazane functionalized ruthenium complex and a preparation method and application thereof, the electrode comprises a conductive substrate, a nano-ATO film deposited on the surface of the conductive substrate and a catalyst 2C-tds in bond connection with the nano-ATO film, and the nano-ATO film is composed of nano-porous antimony doped tin oxide; the chemical formula of the catalyst 2C-tds is Ru (tds) (2-(4-pyridylethyl) silazane) (4-methylpyridine), and the catalyst 2C-tds and hydroxyl on the surface of the nano ATO film form a Si-O covalent bond through a silazane group. The electrode has the advantages of stable structure, high catalytic activity and the like, and can efficiently catalyze water oxidation reaction.

The invention discloses a heterojunction battery and a preparation method thereof, and the heterojunction battery comprises the components of a silicon wafer which is an N-type silicon wafer and comprises a first surface and a second surface which are oppositely arranged; the first intrinsic layer and the N-type doped layer are sequentially stacked on the first surface; the second intrinsic layer and the P-type doped layer are sequentially stacked on the second surface; the first transparent conductive layer is laminated on the N-type doped layer; the second transparent conductive layer is laminated on the P-type doped layer; the first electrode is in electric contact with the first transparent conductive layer; the second electrode is in electric contact with the second transparent conductive layer; doping elements in the N-type doping layer comprise an antimony element, and the doping concentration of the antimony element is 1E18 cm <-3 >-2.5 E20 cm <-3 >. According to the invention, the effective doping concentration of the N-type doping layer can be ensured, the ultraviolet induced degradation risk of the heterojunction cell is reduced, and the energy band alignment precision of the heterojunction is ensured.

The application discloses a kind of antimony-doped tin dioxide transparent conductive film and preparation method thereof.The preparation method of the film includes the following steps: (1) using vacuum evaporation method to form tin / antimony / tin layered sandwich structure metal film on the surface of substrate;(2) the metal film prepared in step (1) is used as working electrode, and platinum electrode is used as counter electrode for electrolysis;(3) the metal film after electrolysis is taken out for cleaning, and then annealing treatment is carried out, to obtain the antimony-doped tin dioxide transparent conductive film.The application obtains tin dioxide film by vacuum evaporation of tin and antimony metal, and obtains transparent conductive tin dioxide film after high-temperature annealing.The sheet resistance of the film can reach 198Ω / □, and the light transmittance can reach more than 70% after the film is doped with antimony.The application has the advantages of good universality, low equipment requirement, simple preparation and good repeatability, and has good popularization value.

The invention discloses a powder light emitting crystal material of antimony-doped wide bandgap zirconium-based chloride and a preparation method and application of the powder light emitting crystal material, the chemical formula of the powder light emitting crystal material is (C9H15N3) 2ZrCl8: Sb < 3 + >, the powder light emitting crystal material belongs to a monoclinic system, and the space group is P21 / c; in the powder light emitting crystal material, each zirconium atom is coordinated with eight chlorine atoms to form a [ZrCl8] < 4-> polyhedral structure, organic cations (C9H15N3) < + > are connected with inorganic anions through C-N-H... Cl bonds, and the discrete [ZrCl8] < 4-> octahedral structure is completely isolated by the organic cations (C9H15N3) < + > to form a zero-dimensional ion crystal structure. According to the invention, the antimony element is introduced to overcome the problems of single luminescence center, limited emission wavelength and insufficient luminescence intensity of undoped zirconium-based chloride, and antimony is used as an effective luminescence center to promote the radiation recombination process and realize high-brightness wide-spectrum emission.

The present application relates to the technical field of single crystal silicon doping, and particularly relates to a multi-stage antimony evaporation coefficient optimization method applied to a single crystal silicon antimony doping process, comprising: obtaining process operation parameters of each process stage and inputting the process operation parameters into an antimony evaporation coefficient simulation quantization space to obtain a first antimony evaporation coefficient corresponding to the process stage; obtaining a single crystal furnace structure feature and correcting the first antimony evaporation coefficient based on the single crystal furnace structure feature to obtain a second antimony evaporation coefficient; and taking an antimony content design requirement of a single crystal silicon product as a target, determining a doping ratio of each process stage according to pre-obtained antimony dopant purity information and the second antimony evaporation coefficient of each process stage. The method can comprehensively consider various influencing factors and accurately optimize, and can effectively reduce product quality fluctuations caused by inaccurate antimony evaporation coefficient control and unreasonable doping ratio.

A coated article includes a substrate and a coating applied over at least a portion of the substrate. The coating includes at least one metallic layer formed from one or more silver compounds doped with at least one metal selected from Groups 3 to 15 of the periodic table of the chemical of elements. Also disclosed are capsules that can absorb electromagnetic energy as well as a process of forming an antimony-doped tin oxide coating layer.

The invention discloses an antimony-doped lanthanum oxide nanowire and a preparation method and application thereof.The preparation method of the antimony-doped lanthanum oxide nanowire comprises the steps that S1, precursor suspension liquid is prepared, specifically, an antimony salt solution is slowly added into a lanthanum salt solution, and uniform mixing is conducted; adding an alkaline precipitant to adjust the pH value of the solution to generate a mixed precipitate, and performing ultrasonic dispersion to obtain a uniform precursor suspension; s2, carrying out hydrothermal reaction; s3, washing and drying the precipitate generated by the reaction to obtain an antimony-doped lanthanum oxide nanowire precursor; and calcining to obtain the antimony-doped lanthanum oxide nanowire. The invention also discloses the antimony-doped lanthanum oxide nanowire prepared by the method and application of the antimony-doped lanthanum oxide nanowire in an all-solid-state lithium metal battery based on sulfide electrolyte. The Sb-doped lanthanum oxide nanowire modified layer can effectively improve the stability of the lithium metal negative electrode in a sulfide electrolyte, inhibit the growth of lithium dendrites, reduce the side reaction of an interface, and improve the cycle life and rate capability of the all-solid-state lithium metal battery.

The application discloses preparation and application of antimony-doped manganese-based organic-inorganic metal chloride luminescent material. The preparation method is an anti-solvent method, and the chemical formula of the obtained crystal material is (TTPhP)2MnCl4:Sb 3+ (TTPhP + =C 24 H 20 P + , which is a tetraphenylphosphonium cation), wherein 0.00028 The application has the advantages of low cost, simple and environment-friendly method, enriched luminescent properties of manganese-based organic-inorganic metal halide through antimony doping, improved fluorescence quantum yield, solved single-component organic-inorganic metal halide luminescence single problem, and good application prospect in luminescent information anti-counterfeiting and self-referencing calorimeter preparation. The material can also emit green light under X-rays excitation and has good temperature thermal stability, which widens the application field of organic-inorganic metal luminescent halide, and makes the material also have good application in scintillators.

The application belongs to the technical field of lithium / sodium ion battery preparation, and discloses a preparation method of antimony-doped graphite-phase carbon nitride composite material, which comprises the following steps: 1) Sb2O3 powder is added into hot tartaric acid to prepare a solution; 2) g-C3N4 powder is added into the solution in step 1) and stirred to be uniformly mixed, and then dried into yellow block-shaped solid; 3) the yellow block-shaped solid is placed into a tube furnace, carbonized at 600 DEG C to 800 DEG C for 1 to 6 hours in an inert gas environment, and antimony-doped graphite-phase carbon nitride composite material is obtained. The composite material obtained by the method exhibits excellent rate performance and stable performance cycle when applied in lithium / sodium ion batteries, and the material has very high commercial value.

The utility model provides an antimony doping device for monocrystalline silicon production, and aims to solve the technical problems of long time consumption and low efficiency in the existing antimony doping process for monocrystalline silicon production. The device comprises a chuck which can be connected to a single crystal furnace heavy hammer; one end of the connecting rod is connected with the chuck, and the other end of the connecting rod vertically extends downwards; the bottom plate is arranged at the bottom end of the connecting rod, and the plate surface of the bottom plate is perpendicular to the connecting rod; the baffle plate is annular and is arranged on the bottom plate, and the plate surface of the baffle plate is vertical to the plate surface of the bottom plate; the connecting rod is located in the middle of the baffle. A chuck is arranged to detachably connect a connecting rod to a single crystal furnace counter weight, a bottom plate and a baffle are connected through the connecting rod, the bottom plate and the baffle form a container, mother alloy (high-purity antimony) is placed in the container, a monocrystalline silicon piece is used for manufacturing the bottom plate, and antimony is doped in the bottom plate. According to the technical scheme, the duration of the antimony-doped process for producing monocrystalline silicon can be shortened, and the efficiency is improved.

The invention discloses a manufacturing method of an electrode for electrocatalytic reduction of nitrate, an electrode product and application, and belongs to the technical field of electrochemical water treatment in environmental engineering. The titanium-based cobalt-doped tin dioxide electrode with the double-layer structure is prepared by adopting a sol-gel-step heat treatment method, the bottom layer is an antimony-containing cobalt tin oxide conductive layer, the surface layer is an antimony-free cobalt tin oxide catalytic layer, and the molar ratio of tin to cobalt in the two layers is (5: 1)-(7: 1). The long-standing technical prejudice that a titanium-based antimony-doped tin dioxide electrode can only be used for anodic oxidation and cannot be used for cathode nitrate reduction in the field is overcome, the Faraday efficiency of the prepared electrode in high-concentration nitrate wastewater of 1000 mg / L is as high as 97.2%, the ammonia nitrogen selectivity is 99.3%, the performance degradation is only 6.3% after continuous operation for 500 h, and the prepared electrode has a good application prospect. The catalyst has high catalytic activity, high product selectivity and long-term operation stability, is suitable for treatment of various nitrate-polluted water bodies, and can synchronously realize harmless treatment of pollutants and resource recovery of ammonia nitrogen.

The disclosure aims to provide a polytetrafluoroethylene composition and a molded article that are non-black and that have excellent conductivity. The disclosure relates to a non-black conductive polytetrafluoroethylene composition containing: polytetrafluoroethylene; and a non-black conductive filler containing at least one selected from the group consisting of antimony-doped tin oxide and phosphorus-doped tin oxide.

A coated article includes a substrate and a coating applied over at least a portion of the substrate. The coating includes at least one metallic layer formed from one or more silver compounds doped with at least one metal selected from Groups 3 to 15 of the periodic table of the elements. Also disclosed are capsules that can absorb electromagnetic energy as well as a process of forming an antimony-doped tin oxide coating layer.