29 results about "Antimony doping" patented technology

This invention discloses an antimony-doped wide-bandgap zirconium chloride powder-emitting crystal material, its preparation method, and its application. The chemical formula of the powder-emitting crystal material is (C9H). 15 N3)2ZrCl8:Sb 3+ It belongs to the monoclinic crystal system, with space group P21 / c; in the described photoluminescent crystal material, each zirconium atom is coordinated with 8 chlorine atoms to form [ZrCl8]. 4‑ Polyhedral structure, organic cation (C9H) 15 N3) + It is linked to inorganic anions via C–N–H···Cl bonds, forming discrete [ZrCl8]. 4‑ The octahedral structure is replaced by organic cations (C9H). 15 N3) + Complete isolation is achieved, forming a zero-dimensional ionic crystal structure. This invention overcomes the problems of single luminescent center, limited emission wavelength, and insufficient luminescence intensity in undoped zirconium-based chlorides by introducing antimony. Antimony, as an effective luminescent center, can promote the radiative recombination process and achieve high-brightness broadband emission.

The invention relates to the technical field of photovoltaic cells, in particular to a back contact crystalline silicon cell and a preparation method thereof. A back contact crystalline silicon cell comprises a silicon substrate layer, a composite layer, a tunneling oxide layer, a second passivation layer, a composite doped silicon layer and a back electrode layer. A composite layer is arranged on the first surface of the silicon substrate layer; a tunneling oxide layer is arranged on the second surface; a second passivation layer is arranged on the surface of the tunneling oxide layer; a composite doped silicon layer is arranged on the surface of the second passivation layer, and the composite doped silicon layer comprises a first antimony doped layer, a phosphorus-antimony doped layer and a second antimony doped layer which are sequentially stacked in the direction from the silicon substrate layer to the second passivation layer; and a back electrode layer is arranged on the surface of the composite doped silicon layer. According to the back contact crystalline silicon cell, the contact resistivity of the back electrode can be reduced, the service life of a carrier is prolonged, accurate adaptation of the doping structure and the BC interdigital electrode is achieved, back side parasitism is reduced, the preparation process can be simplified, the cost is reduced, and the long-term reliability of the cell and the conversion efficiency of the cell are improved.

This invention discloses a terahertz band optical comb frequency converter, belonging to the field of frequency conversion technology. The frequency converter includes an optical fiber interface, an optical fiber focusing lens, a frequency converter chip, a hemispherical silicon lens, and an electrical interface. The frequency converter chip includes antenna electrodes, a photoconductor, and an InP substrate. An external 1560nm femtosecond optical comb signal sequentially passes through the optical fiber interface and the optical fiber focusing lens onto the frequency converter chip; simultaneously, an external terahertz signal under test passes through the hemispherical silicon lens onto the frequency converter chip. The antenna electrodes and the electrical interface are connected by a circuit. This invention offers a wider response bandwidth: the response bandwidth is increased through the design of internal defects in the photoconductor; higher sensitivity: the sensitivity of the frequency converter is improved through antimony doping and tungsten oxide thin film design; and higher reliability: the tungsten oxide thin film design and special protection design of the antenna electrodes can respectively avoid damage to the frequency converter caused by optical and electrical signals, thereby improving reliability and service life.

Fuel cell separator, which comprises on a substrate: a composite film comprising an antimony-doped tin oxide and a tin-doped indium oxide, wherein an elemental ratio of tin to indium (Sn / In) in the composite film is 1.4 or less, and The composite film contains 30 to 60 vol.% of antimony-doped tin oxide.

The application discloses a preparation method of a fluorinated antimony-doped passivated lead sulfide quantum dot active layer, and the preparation method comprises the following steps: preparing an iodine-bromine-wrapped lead sulfide colloidal quantum dot film; dissolving fluorinated antimony in acetonitrile to obtain a fluorinated antimony acetonitrile solution; soaking the iodine-bromine-wrapped lead sulfide colloidal quantum dot film in the fluorinated antimony acetonitrile solution; and washing the iodine-bromine-wrapped lead sulfide colloidal quantum dot film with acetonitrile for a preset number of times to obtain a fluorinated antimony chemical reaction-doped passivated lead sulfide quantum dot active layer. The application can improve the overall performance of a semiconductor device containing an active layer.

The invention provides an electrode based on a silazane functionalized ruthenium complex and a preparation method and application thereof, the electrode comprises a conductive substrate, a nano-ATO film deposited on the surface of the conductive substrate and a catalyst 2C-tds in bond connection with the nano-ATO film, and the nano-ATO film is composed of nano-porous antimony doped tin oxide; the chemical formula of the catalyst 2C-tds is Ru (tds) (2-(4-pyridylethyl) silazane) (4-methylpyridine), and the catalyst 2C-tds and hydroxyl on the surface of the nano ATO film form a Si-O covalent bond through a silazane group. The electrode has the advantages of stable structure, high catalytic activity and the like, and can efficiently catalyze water oxidation reaction.

The invention discloses a heterojunction battery and a preparation method thereof, and the heterojunction battery comprises the components of a silicon wafer which is an N-type silicon wafer and comprises a first surface and a second surface which are oppositely arranged; the first intrinsic layer and the N-type doped layer are sequentially stacked on the first surface; the second intrinsic layer and the P-type doped layer are sequentially stacked on the second surface; the first transparent conductive layer is laminated on the N-type doped layer; the second transparent conductive layer is laminated on the P-type doped layer; the first electrode is in electric contact with the first transparent conductive layer; the second electrode is in electric contact with the second transparent conductive layer; doping elements in the N-type doping layer comprise an antimony element, and the doping concentration of the antimony element is 1E18 cm <-3 >-2.5 E20 cm <-3 >. According to the invention, the effective doping concentration of the N-type doping layer can be ensured, the ultraviolet induced degradation risk of the heterojunction cell is reduced, and the energy band alignment precision of the heterojunction is ensured.

The application discloses a kind of antimony-doped tin dioxide transparent conductive film and preparation method thereof.The preparation method of the film includes the following steps: (1) using vacuum evaporation method to form tin / antimony / tin layered sandwich structure metal film on the surface of substrate;(2) the metal film prepared in step (1) is used as working electrode, and platinum electrode is used as counter electrode for electrolysis;(3) the metal film after electrolysis is taken out for cleaning, and then annealing treatment is carried out, to obtain the antimony-doped tin dioxide transparent conductive film.The application obtains tin dioxide film by vacuum evaporation of tin and antimony metal, and obtains transparent conductive tin dioxide film after high-temperature annealing.The sheet resistance of the film can reach 198Ω / □, and the light transmittance can reach more than 70% after the film is doped with antimony.The application has the advantages of good universality, low equipment requirement, simple preparation and good repeatability, and has good popularization value.

The invention discloses a powder light emitting crystal material of antimony-doped wide bandgap zirconium-based chloride and a preparation method and application of the powder light emitting crystal material, the chemical formula of the powder light emitting crystal material is (C9H15N3) 2ZrCl8: Sb < 3 + >, the powder light emitting crystal material belongs to a monoclinic system, and the space group is P21 / c; in the powder light emitting crystal material, each zirconium atom is coordinated with eight chlorine atoms to form a [ZrCl8] < 4-> polyhedral structure, organic cations (C9H15N3) < + > are connected with inorganic anions through C-N-H... Cl bonds, and the discrete [ZrCl8] < 4-> octahedral structure is completely isolated by the organic cations (C9H15N3) < + > to form a zero-dimensional ion crystal structure. According to the invention, the antimony element is introduced to overcome the problems of single luminescence center, limited emission wavelength and insufficient luminescence intensity of undoped zirconium-based chloride, and antimony is used as an effective luminescence center to promote the radiation recombination process and realize high-brightness wide-spectrum emission.

The application discloses preparation and application of antimony-doped manganese-based organic-inorganic metal chloride luminescent material. The preparation method is an anti-solvent method, and the chemical formula of the obtained crystal material is (TTPhP)2MnCl4:Sb 3+ (TTPhP + =C 24 H 20 P + , which is a tetraphenylphosphonium cation), wherein 0.00028 The application has the advantages of low cost, simple and environment-friendly method, enriched luminescent properties of manganese-based organic-inorganic metal halide through antimony doping, improved fluorescence quantum yield, solved single-component organic-inorganic metal halide luminescence single problem, and good application prospect in luminescent information anti-counterfeiting and self-referencing calorimeter preparation. The material can also emit green light under X-rays excitation and has good temperature thermal stability, which widens the application field of organic-inorganic metal luminescent halide, and makes the material also have good application in scintillators.

The invention discloses a manufacturing method of an electrode for electrocatalytic reduction of nitrate, an electrode product and application, and belongs to the technical field of electrochemical water treatment in environmental engineering. The titanium-based cobalt-doped tin dioxide electrode with the double-layer structure is prepared by adopting a sol-gel-step heat treatment method, the bottom layer is an antimony-containing cobalt tin oxide conductive layer, the surface layer is an antimony-free cobalt tin oxide catalytic layer, and the molar ratio of tin to cobalt in the two layers is (5: 1)-(7: 1). The long-standing technical prejudice that a titanium-based antimony-doped tin dioxide electrode can only be used for anodic oxidation and cannot be used for cathode nitrate reduction in the field is overcome, the Faraday efficiency of the prepared electrode in high-concentration nitrate wastewater of 1000 mg / L is as high as 97.2%, the ammonia nitrogen selectivity is 99.3%, the performance degradation is only 6.3% after continuous operation for 500 h, and the prepared electrode has a good application prospect. The catalyst has high catalytic activity, high product selectivity and long-term operation stability, is suitable for treatment of various nitrate-polluted water bodies, and can synchronously realize harmless treatment of pollutants and resource recovery of ammonia nitrogen.

A coated article includes a substrate and a coating applied over at least a portion of the substrate. The coating includes at least one metallic layer formed from one or more silver compounds doped with at least one metal selected from Groups 3 to 15 of the periodic table of the elements. Also disclosed are capsules that can absorb electromagnetic energy as well as a process of forming an antimony-doped tin oxide coating layer.

The invention discloses an antimony-doped bismuth nanosheet, a preparation method thereof and an electrochemical sensor, and belongs to the technical field of electrochemical sensing. The composition of the antimony doped bismuth nanosheet is expressed as xSb-Bi NS, wherein x is 1%-5% and represents the doping proportion of Sb. The antimony-doped bismuth nanosheet has higher structural stability and electro-catalytic performance, and when the antimony-doped bismuth nanosheet is used for modifying a working electrode of an electrochemical sensor, the electrochemical sensor has high sensitivity, high selectivity, high stability and low detection limit when multiple metal ions such as Zn (II), Cd (II) and Pb (II) are detected at the same time.

The invention discloses a high-aging-resistance laser-weldable PCPBT composite material and a preparation method of the high-aging-resistance laser-weldable PCPBT composite material, and belongs to the technical field of polymer composite material processing. And a laser absorption compound with a gradient dispersion structure, namely a compound of nano-coated antimony-doped tin dioxide and micron indium tin oxide, a compound compatilizer, namely a compound of maleic anhydride grafted PC and an epoxy functionalized copolymer, and an antioxidant-light stable synergistic compound and a functional additive are supplemented. The preparation method comprises the steps of pretreatment, pre-reaction mixing, melt blending and granulation. The material is excellent in compatibility, stable in 808-1064nm laser absorption, reliable in welding and outstanding in aging resistance, is suitable for automobile electrical shells, electronic equipment shells, charging pile parts and other scenes, and has remarkable practical value.

The invention discloses a method for carrying out antimony-doped epitaxy on a silicon substrate, and belongs to the technical field of semiconductor manufacturing. According to the method, in an epitaxial CVD reaction furnace, epitaxial growth is carried out on the surface of a silicon substrate by introducing a silicon source-containing gas and an antimony-doped mixed gas containing SbH3 and SbCl3 into a reaction chamber. According to the invention, the synergistic effect of SbH3 and SbCl3 in the epitaxial process is utilized, SbCl3 can inhibit gas phase predecomposition of SbH3, and the doping uniformity is improved; meanwhile, hydrogen generated by decomposition of SbH3 can neutralize chlorine free radicals generated by SbCl3, etching of the chlorine free radicals on the silicon surface is relieved, and therefore the antimony-doped epitaxial layer high in uniformity, low in defect density and excellent in surface quality is obtained in a wide process window. The method can be suitable for conventional CVD epitaxial equipment, even suitable for large-size epitaxy such as 12 inches, and can be easily integrated to an existing production line.

The invention relates to the technical field of semiconductor preparation, in particular to antimony-doped N-type monocrystalline silicon and a preparation method and application thereof. The preparation method comprises the following steps: S1, melting: heating a polycrystalline silicon raw material in an argon environment to melt the polycrystalline silicon raw material, and adding an antimony dopant for multiple times in the melting process to obtain a silicon melt; and S2, crystal growth: adopting a seed crystal consistent with the target crystal orientation to contact the silicon melt for seeding, and then carrying out shouldering, equal-diameter growth, ending, cooling and annealing treatment to obtain the single crystal silicon rod. According to the silicon single crystal rod prepared by the method, the axial resistivity fluctuation is less than or equal to 3%, the radial resistivity fluctuation is less than or equal to 5%, the dislocation density is less than or equal to 100cm <-2 >, and the silicon single crystal rod has excellent axial resistivity uniformity and radial resistivity uniformity, and is low in dislocation density, low in oxygen content and long in minority carrier lifetime.

An electrophotographic photoreceptor includes: a conductive substrate; a photosensitive layer; and a protective layer. The photosensitive layer includes a charge generating agent and a hole transporting agent. The protective layer is a top surface layer of the electrophotographic photoreceptor. The protective layer includes a tin oxide particle and an alumina particle. A content of the tin oxide particle is greater than a content of the alumina particle. The tin oxide particle is favorably a phosphorus-doped tin oxide particle or an antimony-doped tin oxide particle.

An ATO-coated silver powder composite material is provided, comprising ATO and silver powder. The ATO is coated on the surface of the silver powder in the form of a coating layer with a thickness of 3–5 nm. The silver powder is in flake form with a diameter of 6–20 μm and a thickness of 0.1 μm–0.2 μm. The mass ratio of ATO to silver powder ranges from (5:95) to (20:80). The diameter of the silver powder is 8–12 μm. The ATO powder is antimony-doped tin oxide, wherein the antimony doping content is 1–20% by mass. The composite material is obtained by stirring and mixing surface-treated silver powder with an ATO coating liquid. It has infrared emissivity, low optical gloss, and low reflectivity. As a low-emissivity filler, its application in infrared stealth coatings can effectively reduce the amount of optical pigments / dyes used, achieving compatibility with visible light stealth, resulting in an ultra-low emissivity coating compatible with optical-infrared camouflage.

This invention provides a back-contact solar cell, its fabrication method, and its application, relating to the field of photovoltaic technology. Specifically, the back side of the back-contact solar cell of this invention includes n... + Back contact area, and the n + The back contact region includes a gradient-doped antimony layer and a molybdenum dioxide buffer layer. Compared with the p-doped traditional BC battery, this invention achieves significant improvements in minority carrier lifetime, contact resistance, and battery efficiency. Furthermore, by combining gradient antimony doping with the molybdenum dioxide buffer layer, it breaks through the efficiency-cost balance of BC batteries, reducing mass production costs and modification expenses, thus exhibiting excellent photovoltaic performance and practical value.

The invention discloses a method for determining the antimony doping amount of N-type monocrystalline silicon, and the method carries out the following operations for the same coil obtaining the charging completion time of the last charging barrel of the current section, and recording the time as first time; in response to the fact that the coil base is subjected to first-time wire breakage and silicon materials are not added, the first-time wire breakage occurrence time is obtained and recorded as second time; and recording the time interval between the second time and the first time as a first time interval, and determining the first antimony doping amount according to the first time interval, the remaining amount in the crucible and the target resistivity in response to the fact that the first time interval is greater than a first preset time difference. The invention also provides corresponding electronic equipment, a system and a program product. According to the method, the antimony doping amount can be accurately determined.

To achieve local melting of an inorganic material powder containing an inorganic material as a main component in an additive manufacturing technology, to thereby achieve high shaping accuracy. Provided is an inorganic material powder to be used in an additive manufacturing method involving performing shaping through irradiation with laser light, the inorganic material powder including: a base material that is an inorganic material; and an absorber, wherein the absorber has a higher light-absorbing ability than the base material for light having a wavelength included in the laser light, and contains any one of Ti2O3, TiO, SiO, ZnO, antimony-doped tin oxide (ATO), and indium-doped tin oxide (ITO), or contains any one of a transition metal carbide, a transition metal nitride, Si3N4, AlN, a boride, and a silicide.

The invention belongs to the technical field of inorganic functional film materials, and particularly relates to a bismuth ferrite film and a preparation method thereof. The chemical general formula of the bismuth ferrite film is Bi (1 + Z) Fe (1-X) SbXO3, X is the molar weight of an Sb element, 0.08 < = X < = 0.20, the element Bi is excessively added, the film has N layers, in the first layer to the second layer, 0.05 < = Z < = 0.08, 0.08 < = X < 0.15, in the third layer to the (N-2) th layer, Z is more than 0.10 and < = 0.15, 0.15 < = X < = 0.20, in the (N-1) th layer to the Nth layer, 0.15 < = Z < = 0.20, and 0.12 < = X < 0.18. The bismuth source is bismuth nitrate, the iron source is ferric nitrate, and the antimony source is antimony acetate. The antimony-doped bismuth ferrite film has high orientation preferential degree and excellent ferroelectric performance, and the preparation method is low in cost and easy to operate.

The application discloses a high-aging-resistant laser-weldable PCPBT composite material and a preparation method thereof, and belongs to the technical field of polymer composite material processing. The composite material takes PC and PBT as a matrix, is supplemented with a gradient dispersion structure of a laser absorption compound-nano-coated antimony-doped tin dioxide and a micron indium tin oxide compound, a compound compatibilizer-maleic anhydride grafted PC and an epoxy functionalized copolymer compound, an antioxidant-light stabilizer synergistic compound and a functional additive. The material is prepared through pretreatment, pre-reaction mixing, melt blending and granulation. The material has excellent compatibility, is stable to 808-1064 nm laser absorption, is reliable in welding, has outstanding aging resistance, is suitable for scenes such as automobile electrical enclosures, electronic device housings and charging pile components, and has significant practical value.

The application discloses a method for Sb-doped epitaxy on silicon substrate, and belongs to the technical field of semiconductor manufacturing. The method is performed in an epitaxial CVD reaction furnace, in which a silicon source gas and a Sb-doped mixed gas containing SbH3 and SbCl3 are introduced into a reaction chamber to perform epitaxial growth on the surface of a silicon substrate. The SbH3 and SbCl3 are used in the method to achieve a synergistic effect in the epitaxial process: SbCl3 can inhibit the gas phase pre-decomposition of SbH3, and improve the doping uniformity; meanwhile, the hydrogen generated by the decomposition of SbH3 can neutralize the chlorine radicals generated by SbCl3, and reduce the etching of the silicon surface, so that a Sb-doped epitaxial layer with high uniformity, low defect density and excellent surface quality can be obtained within a wide process window. The method can be applied to conventional CVD epitaxial equipment, and even to large-size epitaxy such as 12-inch epitaxy, and is easy to integrate into the existing production line.

The application discloses antimony-doped lanthanum oxide nanowires and a preparation method and application thereof, and relates to the technical field of nanometer materials. The preparation method of the antimony-doped lanthanum oxide nanowires comprises the following steps: S1, preparing a precursor suspension: slowly adding an antimony salt solution into a lanthanum salt solution and uniformly mixing; adding an alkaline precipitator to adjust the pH of the solution, generating a mixed precipitate, and ultrasonically dispersing to obtain a uniform precursor suspension; S2, hydrothermal reaction; S3, washing and drying the precipitate generated in the reaction to obtain an antimony-doped lanthanum oxide nanowire precursor; and calcining to obtain the antimony-doped lanthanum oxide nanowires. The application further discloses the antimony-doped lanthanum oxide nanowires prepared by the method and application thereof in a full-solid-state lithium metal battery based on a sulfide electrolyte. The Sb-doped lanthanum oxide nanowire modified layer can effectively improve the stability of a lithium metal negative electrode in the sulfide electrolyte, inhibit lithium dendrite growth, reduce interface side reactions, and improve the cycle life and rate performance of the full-solid-state lithium metal battery.

The invention discloses a preparation device and a preparation method for heavy antimony doped monocrystalline silicon. The preparation device comprises a crystal pulling furnace main body, a lifting mechanism and a first driving mechanism, a first cavity is formed in the crystal pulling furnace main body, a crucible is arranged in the first cavity, the first driving mechanism can drive the crucible to rotate, a second driving mechanism located above the crucible is arranged at the lifting end of the lifting mechanism, and the second driving mechanism can drive the crucible to rotate. The second driving mechanism can drive the seed crystal to rotate; the preparation method comprises the following steps: placing a crucible in a first chamber, and filling the crucible with a solid monocrystalline silicon material; heating the crucible to melt the solid monocrystalline silicon material in the crucible; inserting the lower end of the seed crystal into the molten monocrystalline silicon material; driving the crucible to rotate, and driving the seed crystal to rotate; wherein the rotation direction of the crucible is opposite to that of the seed crystal; the seed crystal is driven to synchronously move upwards. The method is applied to the technical field of monocrystalline silicon preparation.

The invention relates to the technical field of lithium ion batteries, and discloses a composite coated ternary positive electrode material as well as a preparation method and application thereof. According to the composite coated ternary positive electrode material provided by the invention, the antimony element is doped in the matrix, so that the crystal structure can be stabilized by Sb < 5 + > with high valence and large ion radius, and the mixed arrangement of cations is reduced; the cobalt and lithium elements of the first coating layer can form a stable spinel structure on the surface of a matrix, and interface side reaction is inhibited; surface coating of the tungsten element, the aluminum element, the titanium element and the zirconium element inhibits interface side reaction, the structural stability of the positive electrode material is improved, and the cycling stability and the thermal stability of the lithium ion battery are further improved.

The invention relates to the field of BC batteries, in particular to a preparation method and equipment of a BC battery. The method comprises the following steps: S1, putting a silicon material and an antimony-containing doping source into a single crystal furnace for single crystal growth, and controlling the antimony concentration in a melt to be within a preset concentration in the growth process to obtain an antimony-doped single crystal rod; s2, processing the antimony-doped single crystal rod into a silicon wafer; s3, depositing a composite layer on the back surface of the silicon wafer, wherein the composite layer sequentially comprises a borosilicate glass layer, a phosphorosilicate glass layer and a Sb2O3 layer from the silicon wafer to the outside; s4, selectively irradiating a predetermined region on the back surface of the silicon wafer by adopting laser to enable antimony atoms in the Sb2O3 layer to be activated and diffused downwards to enter the silicon wafer so as to form an n-type heavily doped region; and S5, annealing the silicon wafer and forming a back passivation layer and an electrode. According to the method, the mass production efficiency of the BC battery is improved, the electric leakage rate is reduced, the thermal stability and compatibility of the passivation layer are improved, and the single-tile material and the manufacturing cost are remarkably reduced.

The invention relates to the technical field of photovoltaics, in particular to an antimony doping method of a silicon single crystal rod, the antimony-doped silicon single crystal rod and application of the antimony-doped silicon single crystal rod. An antimony doping method for a single crystal silicon rod comprises the following steps: preparing a molten silicon material, carrying out pressure boosting treatment on the environment where the molten silicon material is located, and adding an antimony source into the molten silicon material by adopting a doping device to obtain an antimony-doped molten material; the antimony-doped melt is subjected to drawing treatment, the drawing treatment comprises equal-diameter growth, the drawing speed in the equal-diameter growth process is controlled to be in a decreasing trend, and the rotating speed of a containing device containing the antimony-doped melt is controlled to be in an increasing trend. According to the method, the axial resistivity deviation of the prepared single crystal silicon rod can be effectively reduced through cooperation of all the steps, the resistivity uniformity of the single crystal silicon rod can be improved, the resistivity concentration can be kept while the length of the single crystal silicon rod is increased, the crystallization rate is remarkably improved, and the remelting energy consumption is reduced.