Production method for implementing selective emitter solar battery

A solar cell and manufacturing method technology, applied in circuits, electrical components, climate sustainability, etc., can solve problems such as unsatisfactory effects and insufficient phosphorus activation, and achieve the effects of easy implementation, low equipment investment, and convenient sources.

Inactive Publication Date: 2009-02-18
HUNAN UNIV
View PDF1 Cites 32 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found that due to insufficient

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] 1. Select P-type single crystal silicon wafer, crystal phase , resistivity 0.5Ω.cm, remove surface damage of silicon wafer, form anti-reflection surface texture and chemical cleaning;

[0014] 2. Using a tubular diffusion furnace, in POCl 3 Light doping diffusion is carried out in the atmosphere, and the sheet resistance of the emitter after diffusion is 100Ω / □;

[0015] 3. Clean the dephosphorous silicon glass, and remove the peripheral and back PN junctions by plasma etching;

[0016] 4. Deposit silicon nitride anti-reflection layer and surface passivation. Silicon nitride is deposited by PECVD method with a thickness of 30nm, and the passivation of defects in the body is realized in the subsequent process;

[0017] 5. Print antimony-doped silver paste on the front of the battery by screen printing process, the mass content of antimony metal is 1.0%, and the doped antimony is high-purity >99.9% simple metal antimony;

[0018] 6. The back electrode is printed and sin...

Embodiment 2

[0020] 1. Select P-type single crystal silicon wafer, crystal phase , resistivity 1.0Ω.cm, remove surface damage of silicon wafer, form anti-reflection surface texture and chemical cleaning;

[0021] 2. Using a tubular diffusion furnace, in POCl 3 Light doping diffusion is carried out in the atmosphere, and the sheet resistance of the emitter after diffusion is 200Ω / □;

[0022] 3. Clean the dephosphorous silicon glass, and remove the peripheral and back PN junctions by plasma etching;

[0023] 4. Deposit the anti-reflection layer and surface passivation. First grow a layer of 10nm SiO2 in an open-tube furnace, and then deposit 50nm silicon nitride on it. The silicon nitride is deposited by PECVD and realized in vivo in the subsequent process. passivation of defects;

[0024] 5. On the front of the battery, antimony and nickel-doped silver paste is printed by screen printing process. The mass content of antimony is 5%, and the doped antimony is high-purity >99.9% simple metal...

Embodiment 3

[0027] 1. Select P-type monocrystalline silicon wafers, crystal phase , and resistivity 10Ω.cm. After the silicon wafers are cleaned by RCA process, they are textured to obtain a "pyramid" texture;

[0028] 2. Using a tubular diffusion furnace, in POCl 3 Light doping diffusion is carried out in the atmosphere, and the sheet resistance of the n-type emitter after diffusion is 100Ω / □;

[0029] 3. Clean the dephosphorous silicon glass, and remove the peripheral and back PN junctions by plasma etching;

[0030] 4. Deposit anti-reflection layer and surface passivation, first grow a layer of 10nm SiO with an open tube furnace 2 , and then deposit 50nm silicon nitride on it, and silicon nitride is deposited by PECVD method;

[0031] 5. The silver paste mixed with antimony and gold is printed on the front of the battery by screen printing process. The mass content of antimony is 1.0%.

[0032] 6. The back electrode is printed and sintered, and the sintering adopts rapid high-temper...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Sheet resistanceaaaaaaaaaa
Resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses a manufacturing method of a solar cell of realizing a selective emitter. The processing steps are as follows: taking a p-type single crystal silicon or polycrystalline silicon chip to carry out low-concentration n-type diffusion doping in a conventional diffusion furnace, to obtain 80 to 300 ohms of n-type emitter doping effect; next, on the basis of a conventional silver paste formula, adding 5 to 0.5 weight percent of high purity metallic antimony micro powder in the paste, preparing antimony doped silver paste after mixing thoroughly and evenly; using a screen printing technique to print the antimony doped silver paste electrode on the facade of the cell. The invention discloses a manufacturing method of a solar cell of realizing a selective emitter, which has low cost, simple technique and convenient control, and can produce in large scale. The technology is simple and practical, compatible with the prior solar cell completely, can improve the photoelectric conversion efficiency of the solar cell obviously, and has extensive industrialization value.

Description

technical field [0001] The invention relates to a method for preparing high-efficiency crystalline silicon solar cells, and belongs to the technical fields of new energy, semiconductor optoelectronics, and the like. Background technique [0002] At present, crystalline silicon solar cells produced in mature commercialization have developed rapidly due to their simple process flow and convenience for large-scale production, accounting for more than 80% of the photovoltaic market. At present, in the field of research, the laboratory efficiency of small-area monocrystalline silicon cells has reached 24.7%, and in the industrial field, the efficiency of conventional monocrystalline silicon cells is 16%-18%. In the traditional process, the surface of the n-type emitter of the solar cell is uniformly doped, and in order to reduce the contact resistance and improve the load capacity of the battery, the doping concentration of the n-type surface is relatively high. However, if the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 万青易宗凤赵斌周棋
Owner HUNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap