This application relates to a uniformly doped rod-shaped
gallium nitride powder and its preparation method. The
gallium nitride powder has a regular morphology,
uniform size, high purity, and high
crystallinity, and can be used as a key functional material for high-end optoelectronic devices, power semiconductors, and advanced packaging. The method uses metallic
gallium as
raw material and introduces
dopant simultaneously during the
hydrothermal synthesis of gallium oxyhydroxide precursor, so that the target element is embedded in situ during the lattice construction stage, achieving atomic-level uniform bulk
doping. This fundamentally avoids the problems of uneven
doping, "doped islands," concentration gradients, and surface enrichment caused by traditional post-
doping methods. The obtained precursor is directly converted into uniformly doped rod-shaped
gallium nitride powder by a one-step high-temperature nitridation. This process is short, simple to operate, and
environmentally friendly, effectively solving the problems of uneven doping, poor
crystallinity, severe agglomeration, and complex processes in the prior art, and providing an efficient and scalable technical path for the controllable preparation of high-performance
gallium nitride powder.