77results about How to "Preferable characteristic" patented technology

There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.

A porous metal body having a foam structure of 500 mum or less in average pore diameter, wherein the skeleton is composed of an alloy primarily including Fe and Cr, and Cr carbide or FeCr carbide is uniformly dispersed in the texture. The metal porous body is produced by preparing a slurry primarily containing an Fe oxide powder having an average particle diameter of 5 mum or less, at least one powder selected from metallic Cr, Cr alloys, and Cr oxides, a thermosetting resin, and a diluent, applying a coating of this slurry to a resin core body having a foam structure, performing drying, and thereafter, performing firing in a non-oxidizing atmosphere so as to produce a metal porous body having the aforementioned skeleton structure.

A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a composition formula (Ba1-xCax) (Ti1-yZry)O3 (note that 0≦x≦0.2, 0≦y≦0.2), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of obtaining a post-reaction material by bringing a material of the main component to react in advance with a part of a material of the fourth subcomponent to be included in the dielectric ceramic composition, and adding rest of material of the fourth subcomponent to be included in the dielectric ceramic composition into the post-reaction material. According to the present invention, both of a dielectric ceramic composition capable of improving the specific permittivity and a temperature characteristic of capacitance can be preferable, and the production method can be provided.

A multilayer ceramic capacitor having internal electrode layers and dielectric layers, wherein a thickness of said dielectric layer is 2.0 μm or less, and an average particle number per one dielectric layer obtained by dividing the thickness of said dielectric layer by an average particle diameter of dielectric particles composing said dielectric layer is 3 or more and 6 or less.

A semiconductor device, including: a first transistor formed on a substrate and including an Hf contained film as its gate insulating film; and a second transistor formed on said substrate and having the same conductive type as that of said first transistor, said second transistor including a silicon oxide film and not including an Hf contained film as its gate insulating film is provided.

A damping mechanism (1) that generates a damping force in response to a liquid flow between a first liquid chamber (R1) and a second liquid chamber (R2) comprises a partitioning member (2) separating the first liquid chamber (R1) and the second liquid chamber (R2) and a flow passage (P) formed in the partitioning member (2) to connect the first liquid chamber (R1) and the second liquid chamber (R2). The flow passage (P) comprises an odd number of through-holes (10-14) greater than three which penetrate the partitioning member (2) and are connected in series. A large amount of frictional energy loss due to a long path length occurs in the flow passage (P) and causes the damping mechanism (1) to generate a sufficient damping force.

A production method of a dielectric ceramic composition having a step of firing dielectric material including a main component ingredient and a subcomponent ingredient, wherein said main component ingredient before firing is barium titanate ingredient powder having the perovskite type crystal structure expressed by ABO3, and a ingredient powder having a ratio A / B of A site components and B site components of 1.006≦A / B≦1.035 and the specific surface area of 8 to 50 m2 / g is used. According to the invention, a dielectric ceramic composition having preferable electric characteristics and temperature characteristic can be provided even in the case of being composed of fine particle and a capacitor made to be a thin layer.

A resin-molded component such as a loudspeaker diaphragm, in which rigidity is enhanced while light weight and high specific modulus of elasticity are maintained, is formed by applying carbon dioxide gas with a predetermined pressure to a thermoplastic resin in which crystallization is facilitated in the resin flowing direction to fill a mold. After the resin is filled, injection molding is performed by somewhat moving the mold to form five layers of: oriented minute-foaming layers, having approximately cylindrical foams, the length of which is twice the diameter thereof in the resin flowing direction in the mold, an unfoamed core layer positioned between both the foaming layers, and unfoamed skin layers formed on the front and rear surfaces.