77results about How to "Preferable characteristic" patented technology

A composite membrane and method for making the same, comprising a porous support and a polyamide surface. The subject membrane provides improved flux and / or rejection rates. The subject membrane is further capable of operating at lower operating pressures. The subject method includes reacting a polyfunctional amine with a polyfunctional acyl halide to form a polyamide. The method includes the step of contacting a complexing agent with the polyfunctional acyl halide prior substantial reaction between the polyfunctional acyl halide and a polyfunctional amine. The subject process is easily adapted to commercial scale manufacturing processes and is particularly suited for making nanofiltration and reverse osmosis composite membranes.

There is provided a photovoltaic device in which at least one pin-junction is formed in a thin film semiconductor deposited on a substrate, the substrate including: a base including polycrystalline silicon; and a polycrystalline silicon layer formed on the base by liquid phase growth, in which at least a part of a surface of the polycrystalline silicon layer has unevenness composed of facet surfaces. The photovoltaic device prevents a reduction in photoelectric conversion efficiency due to the absence of preferable unevenness, an increase in cost due to the use of an expensive material, and a reduction in throughput in the photovoltaic device, and has a preferable characteristic and high productivity.

A multilayer ceramic capacitor having internal electrode layers and dielectric layers, wherein a thickness of said dielectric layer is 2.0 μm or less, and an average particle number per one dielectric layer obtained by dividing the thickness of said dielectric layer by an average particle diameter of dielectric particles composing said dielectric layer is 3 or more and 6 or less.

A fabricating method of a flexible display is provided. A release layer is formed on a carrier substrate. The release layer is patterned to form a patterned release layer. A flexible substrate is formed on the patterned release layer, wherein the flexible substrate covers the patterned release layer and a portion of the flexible substrate contacts the carrier substrate. An adhesive force between the patterned release layer and the flexible substrate is larger than an adhesive force between the patterned release layer and the carrier substrate. A device layer is formed on the flexible substrate. A display layer is formed on the device layer. The flexible substrate and patterned release layer are cut simultaneously. The patterned release layer being cut is separated from the carrier substrate, wherein the flexible substrate, the device layer and the display layer which have been cut are sequentially disposed on the separated patterned release layer.

A low-noise amplifier 500a having low-distortion characteristics (low distortion LNA), a low-noise amplifier 500b of a low current consumption type(low current consumption LNA), and radio-frequency switches 502 and 509 for selectively switching either of them are provided in a receiving radio-frequency unit 103. On the basis of a mode changing control function of a CPU 113, an LNA switch control signal AS is generated so that the low-distortion LNA 500a is selected during a period in which the operation of a radio transmitter-receiver is in a transmitting / receiving state, and that the low current consumption LNA 500b is selected in a period of a standby state, and thus the switching of the radio-frequency switches 502 and 509 of a low-noise amplifier circuit section 501 is controlled.

A semiconductor device, including: a first transistor formed on a substrate and including an Hf contained film as its gate insulating film; and a second transistor formed on said substrate and having the same conductive type as that of said first transistor, said second transistor including a silicon oxide film and not including an Hf contained film as its gate insulating film is provided.

A production method of a dielectric ceramic composition having a step of firing dielectric material including a main component ingredient and a subcomponent ingredient, wherein said main component ingredient before firing is barium titanate ingredient powder having the perovskite type crystal structure expressed by ABO3, and a ingredient powder having a ratio A / B of A site components and B site components of 1.006≦A / B≦1.035 and the specific surface area of 8 to 50 m2 / g is used. According to the invention, a dielectric ceramic composition having preferable electric characteristics and temperature characteristic can be provided even in the case of being composed of fine particle and a capacitor made to be a thin layer.

In an exhaust gas purifying apparatus of the present invention, oxygen sensors 18 and 20 are respectively located upstream, a close coupled three-way catalyst 14 positioned at the upstream end of an exhaust system, and downstream, in a under floor three-way catalyst 17 positioned at the downstream end. When an output VO2 of the oxygen sensor 20 exceeds a predetermined voltage VO2H2, the first correction coefficient KCMDLS is calculated in accordance with the output VO2 (S12 and S13). And when VO2<=VO2H2 is established, in accordance with the engine operating state the second correction coefficient KVMDR is set to a predetermined value KVMDR0 that is slightly greater than 1.0 (S16 to S18), and the target air-fuel ratio coefficient KCMD is corrected by using the correction coefficients KCMDLS and KCMDR (S21).

An analog-digital converter performs AD conversion of an upper m bits by sequential comparison, and performs AD conversion of a lower n bits by integration. This increases accuracy, reduces power consumption during operation, reduces variation between analog signals and digital signals, and reduces the required layout area by decreasing the number of capacitor elements needed. Also, the AD conversion of the n bits by integration is performed by ramp voltage quantized with a margin of k bits of the lower n bits. As such, preferable AD conversion characteristics can be obtained when offset or the like is produced in a DA conversion circuit for generating ramp voltage.

A production method of a dielectric ceramic composition comprising a main component including a compound having a perovskite-type crystal structure expressed by a composition formula (Ba1-xCax) (Ti1-yZry)O3 (note that 0≦x≦0.2, 0≦y≦0.2), and a fourth subcomponent including an oxide of R (note that R is at least one selected from Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); comprising steps of obtaining a post-reaction material by bringing a material of the main component to react in advance with a part of a material of the fourth subcomponent to be included in the dielectric ceramic composition, and adding rest of material of the fourth subcomponent to be included in the dielectric ceramic composition into the post-reaction material. According to the present invention, both of a dielectric ceramic composition capable of improving the specific permittivity and a temperature characteristic of capacitance can be preferable, and the production method can be provided.

A multilayer ceramic capacitor having internal electrode layers and dielectric layers, wherein a thickness of said dielectric layer is 2.0 μm or less, and an average particle number per one dielectric layer obtained by dividing the thickness of said dielectric layer by an average particle diameter of dielectric particles composing said dielectric layer is 3 or more and 6 or less.

An electromagnetic wave absorber includes a first electromagnetic wave absorbent member containing a magnetic loss material, and a second electromagnetic wave absorbent member containing a conducting material arranged in front of the first electromagnetic wave absorbent member. The second electromagnetic wave absorbent member has a shape including an aperture at a tip of a hollow cone.

A method of manufacturing an electron-emitting device includes a process for forming a pair of electric conductors spaced from each other on a substrate, and an activation process for forming a film of carbon or a carbon compound on at least one of the pair of electric conductors. The activation process is sequentially performed within plural containers having different atmospheres.

To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.

A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum).

A microcrystalline semiconductor film having a high crystallinity is formed. Further, a thin film transistor having preferable electric characteristics and high reliability and a display device including the thin film transistor are manufactured with high mass productivity. A step in which a deposition gas containing silicon or germanium is introduced at a first flow rate and a step in which the deposition gas containing silicon or germanium is introduced at a second flow rate are repeated while hydrogen is introduced at a fixed rate, so that the hydrogen and the deposition gas containing silicon or germanium are mixed, and a high-frequency power is supplied. Therefore, a microcrystalline semiconductor film is formed over a substrate.

A production method of a dielectric ceramic composition having a step of firing dielectric material including a main component ingredient and a subcomponent ingredient, wherein said main component ingredient before firing is barium titanate ingredient powder having the perovskite type crystal structure expressed by ABO3, and a ingredient powder having a ratio A / B of A site components and B site components of 1.006≦A / B≦1.035 and the specific surface area of 8 to 50 m2 / g is used. According to the invention, a dielectric ceramic composition having preferable electric characteristics and temperature characteristic can be provided even in the case of being composed of fine particle and a capacitor made to be a thin layer.

In a prismatic nonaqueous electrolyte secondary battery, a flat winding electrode assembly and a nonaqueous electrolyte are housed in a prismatic outer body. A positive electrode includes a positive electrode substrate exposed portion formed along the longitudinal direction. A negative electrode includes a negative electrode substrate exposed portion formed along the longitudinal direction. The nonaqueous electrolyte contains a lithium salt having an oxalate complex as an anion at the time of making the nonaqueous electrolyte secondary battery. The area of the negative electrode substrate exposed portion is 700 cm2 or more. The area of the positive electrode substrate exposed portion is 500 cm2 or more. The area of the negative electrode substrate exposed portion is larger than the area of the positive electrode substrate exposed portion. The prismatic nonaqueous electrolyte secondary battery above can provide a nonaqueous electrolyte secondary battery that has excellent cycling characteristics and excellent reliability.

The present invention provides compounds of formula (I) or a pharmaceutically acceptable salt, solvate, or prodrug thereof, wherein W, X, n, s, t, and Ra are as described herein. The present invention relates generally to selective inhibitors of histone deacetylase and to methods of making and using them.

An optical element, with an improved adhesion strength of the liquid crystal layer, and without substantial deterioration of the optical characteristics (such as transparency deterioration, white turbidity and display irregularity). The optical element has a transparent substrate, an alignment layer, and a liquid crystal layer formed on above-mentioned transparent substrate via the alignment layer. The liquid crystal layer contains an adhesion improving agent; a retardation plate including the above-mentioned optical element; an optical laminated body including the above-mentioned optical element and a polarizing plate; and a display apparatus including the above-mentioned retardation plate or optical laminated body disposed on the optical path.

A position control device for driving one control target, using two drive shafts, has position control units provided to the respective drive shafts. Each position control unit includes a calculation unit for calculating a torque command value before compensation, a deflection vibration reduction torque compensator for calculating a deflection torque estimate and calculating a deflection vibration reduction torque compensation amount, based on the deflection torque estimate and a deflection vibration reduction compensation gain, and a compensator gain calculation unit for outputting, upon receipt of a tandem control command, to the deflection vibration reduction torque compensator, a signal for outputting the deflection vibration reduction torque compensation amount and calculating the deflection vibration reduction compensation gain, and the each of the position control units outputs a value obtained by adding the deflection vibration reduction torque compensation amount to the torque command value before compensation as the torque command value.

An electrical connection device comprises a socket and a plurality of holders. A plurality of pinholes arranged on the socket provide a plug-in function for a plurality of pins of an IC device. A conductive holder placed in the pinhole is a single element made integrally by bending a metallic piece. The holder includes: an extension part arranged along the extension direction of pin-hole, a holding part located at the top end of the extension part, and an electrical connection part located at the bottom end of the extension part. The electrical connection part is a hollow structure having an accommodation inner space. The electrical connection part has a pouring opening so that the hollow structure may be filled with resin.

A non-aqueous electrolyte secondary cell includes: a positive electrode including a positive electrode active material which contains as a primary component, a lithium composite oxide in which the rate of nickel to the total number of moles of metal elements other than lithium is 50 percent by mole or more; a negative electrode; and a non-aqueous electrolyte. The non-aqueous electrolyte contains lithium bis(fluorosulfonyl)amide and a fluorinated chain carboxylic acid ester represented by the following formula,R1 and R2 each represent H, F, or CH3-xFx (x represents 1, 2, or 3) and may be equivalent to or different from each other. R3 represents an alkyl group having 1 to 3 carbon atoms and may contain F.

A nonaqueous electrolyte secondary battery includes a flat winding electrode assembly including a positive electrode substrate exposed portion on one end and a negative electrode substrate exposed portion on the other end. The winding numbers of the positive and the negative electrode substrate exposed portions are each 30 or more. The positive and negative electrode substrate exposed portions each have an outermost surface welded and connected with a positive and a negative electrode collectors, respectively. A nonaqueous electrolyte used to fabricate the battery contains a lithium salt having an oxalate complex as an anion. At the welded connection portions, all of the layers of the positive electrode substrate exposed portion are melted to be welded and connected to the positive electrode collector, and all of the layers of the negative electrode substrate exposed portion are melted to be welded and connected to the negative electrode collector.

In an exhaust gas purifying apparatus of the present invention, oxygen sensors 18 and 20 are respectively located upstream, a close coupled three-way catalyst 14 positioned at the upstream end of an exhaust system, and downstream, in a under floor three-way catalyst 17 positioned at the downstream end. When an output VO2 of the oxygen sensor 20 exceeds a predetermined voltage VO2H2, the first correction coefficient KCMDLS is calculated in accordance with the output VO2 (S12 and S13). And when VO2<=VO2H2 is established, in accordance with the engine operating state the second correction coefficient KVMDR is set to a predetermined value KVMDR0 that is slightly greater than 1.0 (S16 to S18), and the target air-fuel ratio coefficient KCMD is corrected by using the correction coefficients KCMDLS and KCMDR (S21).