Method for preparing zinc oxide-based sputtering target material

A sputtering target material, zinc oxide-based technology, applied in the direction of sputtering coating, metal material coating process, ion implantation plating, etc. Advanced problems, to achieve the effect of high purity, easy large-scale industrial production, and low sintering temperature

Active Publication Date: 2010-09-29
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The technical problem to be solved by the present invention is to fundamentally solve the problem that the zinc oxide-based sputtering target produced by the existing zinc

Method used

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  • Method for preparing zinc oxide-based sputtering target material
  • Method for preparing zinc oxide-based sputtering target material
  • Method for preparing zinc oxide-based sputtering target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] Example 1 Preparation of doped zinc oxide nanopowder

[0054] Dissolve aluminum nitrate and zinc nitrate together in deionized water to form a salt solution with a total salt concentration of 1 mol / L, wherein the molar ratio between aluminum ions and zinc ions is 0.032:1, under strong stirring at a speed of 600 rpm Evenly add dropwise to 3mol / L ammonia solution (solvent is deionized water) at a rate of 20mL / min, keep the pH value of the system at 7.5±0.5 and the temperature at 30°C during the dropwise addition process, and obtain the co-precipitated product; After aging the co-precipitated product for 24 hours, the precipitate was washed three times with deionized water and once with absolute ethanol, and then dried in an oven at 100°C for 10 hours to obtain a dry white product; the white product was dried at 600°C Calcining at lower temperature for 2 hours, the aluminum-doped zinc oxide nanopowder was obtained, wherein the molar ratio between aluminum ions and zinc ion...

Embodiment 2

[0057] Example 2 Preparation of doped zinc oxide nanopowder

[0058] Dissolve aluminum nitrate and zinc nitrate together in deionized water to form a salt solution with a total salt concentration of 0.5 mol / L, wherein the molar ratio between aluminum ions and zinc ions is 0.032:1, and the At a speed of 5mL / min, it was evenly added dropwise to 2mol / L ammonia solution (the solvent was deionized water), and the pH value of the system was kept at 8.3±0.3 during the dropwise addition process, and the temperature was 20°C to obtain the coprecipitated product ; After the co-precipitated product was aged for 24h, the precipitate was washed 4 times with deionized water, then washed 2 times with absolute ethanol, and then dried in an oven at 100°C for 10h to obtain a dry white product; the white product was dried at 500°C Calcining at high temperature for 2 hours to obtain aluminum-doped zinc oxide nanopowder, wherein the molar ratio between aluminum ions and zinc ions is 0.032:1.

[0...

Embodiment 3

[0060] Example 3 Preparation of doped zinc oxide nanopowder

[0061] Dissolve aluminum nitrate and zinc nitrate together in deionized water to form a salt solution with a total salt concentration of 3 mol / L, wherein the molar ratio between aluminum ions and zinc ions is 0.02:1, under strong stirring at a speed of 400 rpm Add it dropwise evenly at a rate of 50mL / min to a 5mol / L ammonia solution (the solvent is deionized water), keep the pH of the system at 9.6±0.4 during the dropwise addition, and keep the temperature at 50°C to obtain a co-precipitated product; After aging the co-precipitated product for 30 hours, the precipitate was washed 5 times with deionized water, then washed 2 times with absolute ethanol, and then dried in an oven at 100°C for 15 hours to obtain a dry white product; the white product was dried at 700°C Calcining at lower temperature for 3 hours to obtain aluminum-doped zinc oxide nanopowder, wherein the molar ratio between aluminum ions and zinc ions is...

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Abstract

The invention discloses a method for preparing a zinc oxide-based sputtering target material. The method comprises the following steps of: performing die pressing on doped zinc oxide nano-powder at the pressure of between 30 and 150 MPa and maintaining the pressure for 30 to 300 seconds; performing isostatic cool pressing on the doped zinc oxide nano-powder at the pressure of between 120 and 300 MPa and maintaining the pressure for 60 to 600 seconds; heating the doped zinc oxide nano-powder to the temperature of between 950 and 1,300 DEG C at a heating rate of between 5 and 10 DEG C per minute, and maintaining the temperature for 1 to 30 minutes; cooling the doped zinc oxide nano-powder to the temperature of between 650 and 1,100 DEG C at a cooling rate of between 10 and 100 DEG C per minute and maintaining the temperature for 2 to 40 hours; and finally, cooling the doped zinc oxide nano-powder to the room temperature at a cooling rate of between 0.5 and 10 DEG C per minute, and performing cutting and polishing on the doped zinc oxide nano-powder to obtain the zinc oxide-based sputtering target material. By adopting specific two-step sintering parameters, the method is used for preparing the target material of which the density is over 98 percent, the grain size is very small and uniform and is between 0.5 and 20 mu m, and the doped components are uniform at a low sintering temperature.

Description

technical field [0001] The invention relates to the technical field of photoelectric materials, in particular to a method for preparing a zinc oxide-based sputtering target. Background technique [0002] Zinc oxide (ZnO) is a wide bandgap semiconductor material, because of its wide bandgap, transparency in the range of visible light (400-800nm), high exciton binding energy, cheap and non-toxic, it is widely used in transparent electronic devices and Electrode materials for solar cells have great application potential and have attracted widespread attention. In the field of transparent conduction, by doping a small amount of other elements such as aluminum, gallium, indium, tin, boron and other elements in the zinc oxide system, a resistivity of 10 can be obtained. -3 ~10 -4 Ω·cm, a zinc oxide-based film with a transmittance higher than 85% in the visible light region, used to replace the more commonly used indium tin oxide (ITO) transparent conductive material. [0003] A...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C4/08
Inventor 杨晔宋伟杰张宇龙魏铁锋张贤鹏谭瑞琴
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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