53results about How to "Control doping" patented technology

The invention discloses a graphene/zinc oxide negative electrode material for a lithium ion battery, and a preparation method thereof. The graphene/zinc oxide negative electrode material for the lithium ion battery is a blend comprising graphene and zinc oxide according to a mass ratio of 1:9-2:8. The preparation method comprises the steps of dissolving water-containing zinc nitrate and graphene oxide powder in a mixed solution of 1,2-propylene glycol and absolute ethyl alcohol; stirring with ultrasonic waves to obtain a precursor solution used for ESD; fixing a metal substrate on a substrate-clamping plate; heating to a temperature of 100-250 DEG C; spraying the precursor solution used for ESD to a substrate material; spraying for 1-2 hours; and cooling to obtain the graphene/zinc oxide negative electrode material for the lithium ion battery. The material is a composite film having a porous structure, can be used as a negative electrode material of the lithium ion battery, can increase contact area between the electrode material and electrolyte, increases charge-discharge efficiency of the battery, and provides more space for volume expansion of zinc oxide after combination with lithium ions, thereby improving the whole electrochemical properties of the negative electrode material of the battery.

The invention discloses a porous reduced graphene oxide oil absorption material with a controllable doping level and a preparation method thereof. The porous reduced graphene oxide oil absorption material with the controllable doping level is of a hierarchical porous structure stacked layer by layer; a reduced graphene oxide aerogel is adopted as a substrate; and amino acid is doped in a framework of the reduced graphene oxide aerogel. The preparation method provided by the invention comprises the steps of firstly mixing graphene oxide and an amino acid reducing agent dissolving solution; then obtaining a reduced graphene oxide hydrogel through a high pressure hydrothermal method; and finally, washing the hydrogel, freezing at low temperature for pore-forming, and obtaining the porous reduced graphene oxide oil absorption material. The oil absorption material provided by the invention has favorable hydrophobicity, has a better adsorption capacity on an oil product and an organic pollutant, and achieves the aim of oil-water separation in an oil-water composite environment; and meanwhile, pore diameter distribution and a pore structure of the material can be regulated and controlled through the control on the doping level, the selective oil absorption of the material is promoted, and the selective adsorption of the oil product is realized.

The invention discloses a method for preparing black titanium dioxide by using a hydrothermal synthesis method. The method comprises the following specific steps: (1) adding sodium peroxide or potassium peroxide into titanium hydride or titanium nitride powder, mixing the materials uniformly, adding water, and stirring the materials uniformly; (2) soaking the polytetrafluoroethylene lining of a reaction kettle into aqua regia at the room temperature for 1 hour, boiling the polytetrafluoroethylene lining with distilled water for three times, putting a powder mixed solution prepared in the step (1) into the polytetrafluoroethylene lining, putting the polytetrafluoroethylene lining into a matched steel casing, and tightening the steel casing; (3) putting the reaction kettle into a constant-temperature reactor, and reacting at the temperature of 150-250 DEG C for 3-7 hours; (4) after the reaction, centrifuging a product obtained in the step (3), discarding supernatant, taking precipitate out, and washing the precipitate with deionized water; and (5) drying the precipitate obtained in the step (4) to obtain the black titanium dioxide powder.

The invention discloses a method for preparing a tungsten-doped vanadium oxide film, comprising the following steps of: firstly, placing the cleaned substrate into a high vacuum chamber; secondly, introducing high-purity argon gas into a vacuum chamber; respectively carrying out sputter cleaning on the surfaces of a metal vanadium target and a metal tungsten target by turning on a vanadium target sputter power supply and a tungsten target sputter power supply under the condition that the substrate is shielded by using a substrate baffle; introducing high-purity oxygen gas into the vacuum chamber; opening the substrate baffle, closing a tungsten target baffle, turning on the vanadium target sputter power supply and depositing a bottom layer vanadium oxide film; after the depositing the bottom layer vanadium oxide film, closing oxygen gas and the vanadium target baffle and turning off the vanadium target sputter power supply, turning on the tungsten target sputter power supply and opening the tungsten target baffle and depositing an intermediate layer of tungsten film; after depositing the metal tungsten film, turning off the tungsten target sputter power supply and closing the tungsten target baffle, introducing oxygen gas again, turning on the vanadium target sputter power supply and opening the vanadium target baffle and depositing the vanadium oxide film; and finally, carrying out in-situ annealing treatment on a composite film obtained through deposition.

The invention discloses a production method of photocatalytic composite microspheres, comprising the steps of (1) preparing a polymer precursor; (2) producing sol from a photocatalyst and doping photosensitive materials; (3) mixing protecting glue and suitable water to produce a copolymerization continuous phase, and adding the polymer precursor of step (1) and the sol of step (2), and mixing well; (4) adjusting system acid-base environment, controlling polymerizing speed of the polymer precursor, and polymerizing the polymer precursor to obtain polymer microspheres, doping photocatalytic material and photosensitive material at a certain speed, and loading to the polymer microspheres to obtain photocatalytic microspheres, with the photocatalytic microspheres controlled in the range of 1-5 Mum; (5) adjusting acid-base environment, ending the reaction, filtering a suspension to obtain filter cakes, and washing the filter cakes three times with hot purified water at 80 DEG C; (6) drying the filter cakes at 100 DEG C, grinding into powder with a mortar, thermally treating in an oven at 130 DEG C for 3 h, removing micromolecular volatiles, and grinding into powder that is photocatalytic microsphere dried powder. The photocatalytic composite microspheres herein can degrade gaseous organic pollutants, can also kill harmful bacteria and is widely applicable.

The invention relates to a method for preparing a double-layer anti-reflection film for a silicon solar cell and belongs to the technical field of new energy materials. According to the method, a urethane acrylate modified SiO2 film is employed, the urethane acrylate has a urethane bond, the invention is characterized in that a plurality of hydrogen bonds can be formed between polymer molecular chains, the double-layer anti-reflection film has high wear resistance, adhesion, flexibility, high peel strength and excellent low-temperature resistance performance and the excellent optical performance and weather resistance of polyacrylate, a modified second layer anti-reflection film has excellent mechanical wear resistance and flexibility, and the breaking elongation is high. According to theinvention, the silver mirror reaction is used and the annealing treatment is combined, silver nanoparticles are prepared on the surface of a substrate to be a first layer anti-reflection film, the formation of the silver nanoparticles in random distribution is a result of the combined action of metal thermodynamics and kinetics, and when the rapid annealing is carried out, a silver film system acquires sufficient kinetic energy and tends to have nanoparticle structure with a small surface area.

The present invention relates to an AlGaInP semiconductor laser with a superlattice limiting layer. The AlGaInP semiconductor laser includes a substrate, a lower limiting layer, a lower waveguide layer, a quantum well layer, an upper waveguide layer, a first upper limiting layer, a second upper limiting layer and an ohmic contact layer from the bottom to the top. The first upper limiting layer isa superlattice structure in which an AlGaInP material of a high aluminum component and an AlGaInP material of a low aluminum component are alternately grown, in the first upper limiting layer, the doping material of the AlGaInP material of the high aluminum component is Mg, the doping material of the AlGaInP material of the low aluminum component is Mg, the second upper limiting layer is the AlGaInP material of the high aluminum component, and the doping material of the second upper limiting layer is Mg. According to the AlGaInP semiconductor laser, the highly doped first upper limiting layerand second upper limiting layer are used, the series resistance of an epitaxial layer can be reduced, the generation of Joule heat is reduced, and the photoelectric conversion efficiency is improved.

The invention relates to a formula and a synthetic method for lanthanum-manganese doped strontium ferrite magnetic powder with an adjustable magnetic coercive force, belonging to the technical fields of chemical coprecipitation preparation and preparation of magnetic materials. The method comprises the following steps dissolving soluble salt compounds (e.g., chlorate, nitrate, sulfate and acetate) of iron, strontium, manganese and lanthanum in deionized water according to a certain mol ratio and carrying out magnetic stirring; then adding a triethylamine solution and carrying out stirring while pouring until no precipitated is precipitated; allowing the precipitate to be filtered, putting the precipitate into a baking oven and removing water at a temperature of 120 DEG C; and carrying out grinding again and sintering at a temperature of 900 DEG C to prepare the lanthanum-manganese doped strontium ferrite nanometer powder. According to characterization results of the powder by XRD, the strontium ferrite retains its original structure. According to SEM observation, the microstructure of the strontium ferrite is mainly rod-like and hexagonal flaky semitransparent crystals. Through changing of the doping amount of lanthanum and manganese, the coercive force of the strontium ferrite is effectively adjusted, demands of different magnetic recording materials are met, and the application range of the strontium ferrite is broadened.

The invention discloses a BiFe1-XMnXO3 ferroelectric film with high remnant polarization and a preparation method thereof, and x is equal to 0.02-0.08. The BiFe1-XMnXO3 ferroelectric film is of a twisty perovskite structure, belongs to a rhombohedral system, and is good in uniformity. At the frequency of 1kHz, the remnant polarization is 100-130.4mu C/cm<2>. The preparation method comprises the steps of: dissolving bismuth nitrate, ferric nitrate and manganese acetate in a mixed solution of ethylene glycol monomethyl ether and acetic anhydride according to a molar ratio of 1.05:(1-x) to obtain a precursor solution; and spinning the precursor solution on a substrate, homogenating and baking to obtain a dry film; annealing to obtain the BiFe1-XMnXO3 ferroelectric film, repeatedly carrying out the steps of spinning the precursor solution, baking, and annealing till a required film thickness is reached, thus obtainng the BiFe1-XMnXO3 ferroelectric film with high remnant polarization. The BiFe1-XMnXO3 ferroelectric film is simple in requirement of equipment, easily controllable in doping amount, and capable of greatly improving ferroelectric properties and dielectric properties of a BiFeO3 film.

The invention provides a hollow spherical tantalum-doped Cu<7>S<4> material as well as a preparation method and application thereof. The chemical formula of the hollow spherical tantalum-doped Cu<7>S<4> material prepared by the invention is expressed as Ta/Cu<7>S<4>, wherein the atomic percentage content of Ta element is 1.6-3.2%; and the material is of a hollow sphere structure, and the diameterof the material is 2-10 microns. The preparation method used in the invention comprises: dissolving copper nitrate, tantalum pentachloride, sodium hydroxide and lauryl sodium sulfate in ethylene glycol to form a mixed solution, and carrying out solvothermal treatment to obtain precursor powder; and uniformly dispersing the obtained precursor powder in an ethylene glycol solution of sodium sulfide,carrying out a heating vulcanization reaction to generate Ta/Cu<7>S<4>, and carrying out filtering, cleaning and vacuum drying to obtain a target product. The material has relatively high specific capacity and excellent rate capability, and is suitable for being applied to a supercapacitor negative electrode material.

The invention provides a lanthanum indium co-doped strontium titanate conductor material and a preparation method thereof. According to the invention, a material chemical general formula is Sr1-xLaxTi1-yInyO3, and 0.1</=x</=0.4 and 0.03</=y</= 0.1; tetrabutyl titanate is used as a titanium source; anhydrous ethanol and isopropyl alcohol are used as solvents; the oxide of lanthanum and indium is used as a dopant raw material; a sol-gel method is used to prepare the lanthanum indium co-doped strontium titanate conductor material; the lanthanum indium co-doped strontium titanate conductor material has a single cubic phase perovskite structure, has the advantages of good stability, excellent electronic conduction and ion conductance, and can satisfy the application needs of many fields such as a fuel cell anode material, an oxygen permeation membrane, an automobile exhaust gas sensor and the like; and compared with a traditional solid-phase sintering method, the preparation method provided by the invention has the advantages of short reaction time, low energy consumption, high product density, uniform composition, wide application prospect and the like.

The invention relates to the technical field of electrochemistry and new energy materials, in particular to a heteroatom in-situ doped porous carbon composite lithium negative electrode and a preparation method and application thereof. The heteroatom in-situ doped porous carbon composite lithium negative electrode comprises the following raw materials: a porous carbon material and lithium, the porous carbon material comprises a carbon framework containing a pore structure, the carbon framework is uniformly doped with heteroatoms, and the heteroatoms comprise at least one of nitrogen, oxygen, phosphorus and sulfur. According to the scheme, the technical problem that the battery performance is difficult to improve due to the fact that an existing lithium negative electrode and a preparation method thereof cannot effectively improve the deposition-dissolution behavior of lithium is solved. According to the scheme, the three-dimensional porous carbon framework containing the electronegative functional group is used, the deposition-dissolution behavior of lithium is directionally regulated and controlled, and the prepared heteroatom in-situ doped porous carbon composite lithium negative electrode has a wide application prospect in the fields of liquid lithium ion batteries and solid lithium batteries.