Cobalt-antimonide-base thermoelectric film and preparation method thereof

A thermoelectric thin film, cobalt antimonide-based technology, applied in the field of cobalt antimonide-based thermoelectric thin film and its preparation, can solve the problems of poor controllability, low efficiency, cumbersome process, etc., achieve simplified preparation process, reduce cumbersome process, controllable strong effect

Active Publication Date: 2015-03-04
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a cobalt antimonide-based thermoelectric thin film and its preparation method, aiming to solve the problem of cumbersome process, low efficiency and poor controllability of the existing cobalt antimonide-based thermoelectric thin film preparation method The problem

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  • Cobalt-antimonide-base thermoelectric film and preparation method thereof
  • Cobalt-antimonide-base thermoelectric film and preparation method thereof
  • Cobalt-antimonide-base thermoelectric film and preparation method thereof

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Embodiment

[0050] Using In as the dopant material (A), firstly, CoSb 3 and In targets are respectively fixed on the two-station target racks of the sputtering apparatus (multi-station sputtering system) to be sputtered; with polyimide (PI) as the substrate (insulating substrate), the substrate Placed in a container, ultrasonically cleaned with acetone, alcohol and deionized water in sequence; the background vacuum of the sputtering system was pumped to 6.0×10 -4 Pa, the inlet flow rate is 40 sccmAr gas (high purity), and the working pressure is controlled at 3.0×10 -1 Pa: The ion beam with ion source energy lower than 1KeV is used to bombard the surface of the substrate to further remove the impurity molecules adsorbed on the surface of the substrate;

[0051] Such as figure 1 As shown, in the first embodiment, firstly, the sputtering method is used to plate CoSb on the substrate 3 Thermoelectric thin film, the total sputtering time is 60 min, when CoSb 3 When sputtering to 15 min, ...

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Abstract

The invention discloses a cobalt-antimonide-base thermoelectric film and a preparation method thereof. The preparation method comprises the following steps: by using a cobalt antimonide target as a sputtering target, and separately making a material to be doped into a doping target; fixing the sputtering target and doping target to a rotating target rack of a multi-station sputtering system for later sputtering; and plating a cobalt antimonide film on an insulating substrate by sputtering deposition while sputtering the doping material on the antimonide cobalt film by many times to obtain a laminated-structure film, and finally, carrying out in-situ heat treatment to obtain the cobalt-antimonide-base thermoelectric film. The method has high controllability, and is beneficial to generation of the film structure; the film has favorable adhesiveness and repetitiveness, can satisfy the demands for large-scale production, and can accurately control the sputtering power, time and other parameters as well as the doping amount of the doping material; and by adopting the lamination mode, multiple elements can be simultaneously doped conveniently, and the complex techniques for preparing the multi-doping-element target are reduced.

Description

technical field [0001] The invention relates to the field of thermoelectric functional materials, in particular to a high-performance cobalt-antimonide-based thermoelectric thin film capable of single-element doping or multi-element doping and a preparation method thereof. Background technique [0002] Thermoelectric material is a green and environmentally friendly functional material that can directly convert heat energy and electric energy. Thermoelectric devices made of thermoelectric materials are small in size, light in weight, without any mechanical rotating parts, work without noise, and have a long service life. Liquid or gaseous medium, there is no problem of polluting the environment, and can be widely used in thermoelectric generators, thermoelectric coolers, sensors and other fields. Therefore, the preparation of high-performance thermoelectric materials, the ultimate realization of environmentally friendly solar thermal and industrial waste heat power generation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06C23C14/54
CPCC23C14/14C23C14/3407C23C14/5806
Inventor 范平郑壮豪梁广兴张银范卫芳罗景庭
Owner SHENZHEN UNIV
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