The invention discloses an RTP
equipment temperature control method and device based on
diagonal matrix decoupling, and relates to the technical field of
semiconductor manufacturing
temperature control. Aiming at the problems of
strong coupling and large time
delay of multiple temperature zones of RTP equipment and difficulty in accurately solving a model inverse matrix, the method comprises the following steps: firstly, establishing a multi-temperature zone heating model; solving an approximate inverse matrix of the heating model by using a relative normalized
gain matrix (RNGA) and a relative average
residence time matrix (RARTA); a time
delay correction strategy is introduced, a
diagonal matrix decoupling model is constructed, and physical
realizability is ensured; and finally, closed-
loop control is realized in combination with an incremental
PID controller. According to the method, the problem that the decoupling matrix of a high-dimensional
coupling system is difficult to calculate can be effectively solved, overshoot is remarkably inhibited, and the
wafer temperature uniformity and the anti-interference capability are improved.