115results about How to "Doping amount is controllable" patented technology

The invention provides a preparation method of nitrogen-doping ordered mesoporous carbon materials. According to the method, rich-hydroxyl saccharide carbohydrate is used as carbon sources, ammonia water is used as nitrogen sources, amination reaction under the hydrothermal condition is adopted for preparing rich-nitrogen precursors, mesoporous silica molecular sieves SBA-15 (space group P6mm) are used as templates, and the nitrogen-doping ordered mesoporous carbon materials in two-dimensional orthohexagonal ordered mesostructures are prepared through multi-time wetting combined with the high-temperature themolysis technology.

The invention discloses a method for preparing a nanotube doped with titanium dioxide by a two-step presynthesis method. Firstly, a sol-gel method or a hydrolysis method and other methods are adopted to synthesize nano particles doped with the titanium dioxide for target elements; secondly, the nano particles are made into the nanotube doped titanium dioxide by the hydrolysis method. The method has simple and feasible process, wide and application range for the doped elements; moreover, the nanotube prepared by the method has thin tube wall, small tube diameter, large surface area, response to visible light, and wide application prospect in aspects such as photocatalysis, photosensing, photoelectric conversion and so on.

The invention provides a method for doping and growing ZnO-based film through magnetron sputtering. The method comprises the following steps: placing a substrate in the reaction chamber of a magnetron sputtering device, vacuumizing the reaction chamber to lower than 1*10<-4>Pa; separately placing ZnO target and doped source element target on the radio frequency target position and DC or electromagnetic target position of the turntable of the reaction chamber, introducing oxygen and argon, which are used as sputtering atmosphere, in a buffer chamber, fully mixing in the buffer chamber, introducing the mixed gas in a vacuum reaction chamber, performing sputtering growth when the pressure is 1-3Pa and the temperature of the substrate is below the room temperature; selecting a sample position and adjusting the sputtering times of the radio frequency target position and DC or electromagnetic target position through a preset program to alternately grow ZnO films and doped element layers; and after the growth placing the doped ZnO-based film in vacuum, air or nitrogen atmosphere to anneal for 30-60 minutes at 400-800 DEG C.

The invention provides a Bi0.92-xHo0.08AExFe0.97Mn0.03O3-Zn1-yNiyFe2O4 ferromagnetic composite film and a preparation method thereof. The ferromagnetic composite film comprises a Bi0.92-xHo0.08AExFe0.97Mn0.03O3 crystalline film and a Zn1-yNiyFe2O4 crystalline film, which are compounded together. The preparation method is as below: first respectively preparing a Zn1-yNiyFe2O4 precursor solution and a Bi0.92-xHo0.08AExFe0.97Mn0.03O3 precursor solution, wherein AE is Sr, Ca, Ba or Pb, x equals to 0.01-0.04, and y equals to 0.1-0.9; preparing a plurality of Zn1-yNiyFe2O4 films on a substrate by spin coating; and then preparing plurality of Bi0.92-xHo0.08AExFe0.97Mn0.03O3 films on the Zn1-yNiyFe2O4 films by spin coating, so as to obtain the ferromagnetic composite film. The method regulates the crystal structure of BiFeO3 by doping, and uses ferromagnetic Zn1-yNiyFe2O4 as the magnetic layer, so as to substantially increase the ferroelectric and ferromagnetic properties of the film, and effectively reduce the leakage current density of the film.

The invention discloses a multiferroic Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3-NiFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 crystalline state film and a NiFe2O4 crystalline state film which are compounded together. The preparation method comprises the following steps: respectively preparing a Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 precursor solution and a NiFe2O4 precursor solution; and spinning on a substrate to prepare a multilayer NiFe2O4 film, and spinning on the NiFe2O4 film to prepare a multilayer Bi0.96-xSr0.04RExFe0.94Mn0.04Cr0.02O3 film, thereby obtaining the target product. The equipment requirement is simple, the prepared film is high in uniformity, the doping amount is easy to control, and the ferroelectric properties and ferromagnetic properties of the film are greatly improved. Meanwhile, the leakage current density of the film is effectively reduced.

The invention relates to a porous membrane for a hydrogen-chloride fuel battery, as well as a preparation method and application. The preparation method comprises the following steps of: ultrasonically dissolving a macromolecular polymer and nano oxide particles in an organic solvent to prepare membrane production liquid, and preparing a polymer-inorganic porous membrane with an asymmetric morphor structure by adopting a phase inversion method, wherein the thickness of the prepared membrane is 25 to 150 micrometers, and the porous rate is 60 to 80 percent. The thickness, porous rate, aperture and oxide doping volume of the porous membrane prepared by the method are easy to control, the acid retention volume of the prepared membrane is high, the strength is good, the cost is low, the preparation method is simple, and the porous membrane can be well applied to the hydrogen-chloride fuel battery.

The invention discloses a method for preparing a Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film via a sol-gel process. The method is carried out by the following steps of: washing an FTO (Fluorinedoped Tin Oxide) substrate and subsequently irradiating via ultraviolet light; using bismuth nitrate, ferric nitrate, samarium nitrate and chromic nitrate as raw materials (the bismuth nitrate excesses by 5%), dissolving the above raw materials in mixed ethylene glycol monomethyl ether and acetic anhydride according to a mole ratio of 0.90: (1-x):0.15:x (x is 0.00, 0.01, 0.02 or 0.03), then adding ethanol amine to adjust a viscosity and obtain a stable BiFeO3 (bismuth ferrite) precursor solution with a metal ion concentration of 0.003-0.3mol / L; and homogenizing and subsequently obtaining a dry film, then using a layer-by-layer annealing process to obtain a crystal-state Bi0.85Sm0.15Fe1-xCrxO3 ferroelectric film. The method disclosed by the invention has the advantages of simple device requirement, easy achievement of experiment condition, good uniformity of the prepared films and easy control of the doping amount, so that the ferroelectric performance of the film is greatly enhanced.

The invention discloses a graphene / zinc oxide negative electrode material for a lithium ion battery, and a preparation method thereof. The graphene / zinc oxide negative electrode material for the lithium ion battery is a blend comprising graphene and zinc oxide according to a mass ratio of 1:9-2:8. The preparation method comprises the steps of dissolving water-containing zinc nitrate and graphene oxide powder in a mixed solution of 1,2-propylene glycol and absolute ethyl alcohol; stirring with ultrasonic waves to obtain a precursor solution used for ESD; fixing a metal substrate on a substrate-clamping plate; heating to a temperature of 100-250 DEG C; spraying the precursor solution used for ESD to a substrate material; spraying for 1-2 hours; and cooling to obtain the graphene / zinc oxide negative electrode material for the lithium ion battery. The material is a composite film having a porous structure, can be used as a negative electrode material of the lithium ion battery, can increase contact area between the electrode material and electrolyte, increases charge-discharge efficiency of the battery, and provides more space for volume expansion of zinc oxide after combination with lithium ions, thereby improving the whole electrochemical properties of the negative electrode material of the battery.

The invention provides a multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi1-xRExFe0.97-yMn0.03TMyO3 crystalline state film and a CoFe2O4 crystalline state film. The preparation method comprises the following steps of respectively preparing Bi1-xRExFe0.97-yMn0.03TMyO3 precursor solution and CoFe2O4 precursor solution; spin coating on a substrate to prepare a plurality of layers of CoFe2O4 films, spin coating on the CoFe2O4 films to prepare a plurality of layers of Bi1-xRExFe0.97-yMn0.03TMyO3 films and accordingly obtaining a target product. According to the multiferroic Bi1-xRExFe0.97-yMn0.03TMyO3 / CoFe2O4 composite film and the preparation method thereof, the device requirement is simple, the prepared film is good in homogeneity, the doping content is easy to control, the ferroelectric property and the ferromagnetic property of the film are improved to a large extent, and the film is high in residual polarization value and residual polarization value.

The invention relates to a preparation method for an Ag-Al co-doped p type ZnO film, which comprises the following steps: weighting a right amount of precursor zinc salt; taking an organic solvent with corresponding volume; dissolving the zinc salt into the organic solvent; adding diethanolameine as a stabilizing agent, wherein the mole weight of the diethanolameine is equal to the mole weight of zinc ions; adopting water-bath heating and continuously stirring; adding doped source aluminum nitrate and silver nitrate, and continuously stirring; taking out a solution, ageing into sol, coating a film on a substrate, and then pre-processing; and performing annealing treatment, thereby obtaining the required film. The preparation method is simple in process; the cost of equipment is low; the required raw materials are easily obtained; the uniformity of the film is excellent; the preparation method can be applied to industrialized production; and the application prospect is wide.

The invention discloses a transparent conductive film which is a gallium doped or aluminium doped zinc-magnesium-oxygen film. The mol percentage of each component is as follows: the aluminium or gallium occupies 1.0 to 5.0 percent, the magnesium occupies 1 to 20.0 percent, the remaining is the zinc, and the mol number ratio of zinc-magnesium-aluminium or zinc-magnesium-gallium to O is 1:1. The DC reactive magnetic control sputtering method is adopted and the film is prepared by taking a zinc-magnesium-aluminium alloy or a zinc-magnesium-gallium alloy as a target. The method of the invention is simple, the doped quantity is easy to control, and a deposition system is simple, easy to operate and can realize the extensive metallic-membrane plating. Compared with other preparative techniques, the method is more beneficial to the realization of the industrial production. The gallium doped zinc-magnesium-oxygen or aluminium doped zinc-magnesium-oxygen transparent conductive film prepared by the invention has high transmittance, good electrooptics performance, repetitiveness and stability.

The invention relates to an NCM ternary cathode material doped with a Mo element in a surface layer and a bulk phase, and a preparation method thereof, belonging to the field of chemical energy storage batteries. In total mass of 100% material, Mo element doped in the surface layer and the bulk phase accounts for 0.5-2%, and the other is NCM ternary cathode material. The method comprises the stepsof adding alcohol to a mixture of nickel-cobalt-manganese hydroxide precursor, ammonium molybdate and LiOH.H2O and grinding and mixing uniformly, so as to obtain dry grinded material; calcining the dry grinded material, precalcining the material for 300-400 minutes at 500-550DEG C, then calcining for 800-900 minutes at 700-750DEG C so as to obtain the material. The doped Mo element can stabilizethe material structure, lower charge transfer impedance, and improve electrochemical performance of the material. The method is easy to perform and the process technology are easy to realize.

The invention discloses a layer-by-layer alternatively doped low-leakage-current BiFeO3 film and a preparation method thereof. The preparation method comprises the steps of dissolving bismuth nitrate, ferric nitrate and nitric acid into mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution A; dissolving bismuth nitrate, ferric nitrate and samarium nitrate in mixed liquid of ethylene glycol monomethyl ether and acetic anhydride so as to obtain a precursor solution B; coating the precursor solution A on a FTO / glass substrate by way of spin coating, baking and annealing the FTO / glass substrate so as to obtain a Tb doped crystalline BiFeO3 film, coating the precursor solution B on the Tb doped crystalline BiFeO3 film by way of spin coating, baking and annealing the Tb doped crystalline BiFeO3 film so as to obtain a Sm doped crystalline BiFeO3 film, and alternatively preparing the Tb doped crystalline BiFeO3 film and the Sm doped crystalline BiFeO3 film on the Sm doped crystalline BiFeO3 film so as to obtain the layer-by-layer alternatively doped low-leakage-current BiFeO3 film. The method disclosed by the invention adopts a sol-gel process, and is simple in equipment requirements and suitable for preparing films on large surfaces and irregularly-shaped surfaces, and chemical components are precise and controllable.

The invention relates to a graphene doping agent, a graphene doping process and the application of a doped graphene material. A doping process can be completed by using processes such as a dry process (including thermal evaporation and sputtering) or a wet process (including spinning, electrochemical deposition and solution soaking). By virtue of the graphene doping agent, the sheet resistance of a graphene film with a substrate is reduced from about 830 ohms to about 530 ohms on the premise that the transmittance of graphene in a visible light range is not influenced, the conductivity is improved, and the stability is high. By the adoption of the wet process or the dry process for doping, the advantages of controllability in plating thickness, controllability in doping amount, high uniformity and the like are achieved; and by the adoption of an annealing process, the doping agent is more compactly combined with the graphene, the doped graphene material is unlikely to be influenced by the environment when being subsequently used.

The invention provides a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 / Mn(1-x)CoxFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 crystalline-state film and a Mn(1-x)CoxFe2O4 crystalline-state film which are compounded together. The preparation method comprises the following steps: respectively preparing a Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 precursor solution and a Mn(1-x)CoxFe2O4 precursor solution; then spinning on a substrate to prepare a multi-layer Mn(1-x)CoxFe2O4 film; and spinning on the Mn(1-x)CoxFe2O4 film to prepare a multi-layer Bi0.90Er0.10Fe0.96Co0.02Mn0.02O3 film which is the target product. In the invention, the equipment requirements are simple, the prepared film has relatively good uniformity, the doping amount is easy to control, the ferroelectric property and ferromagnetic property of the film are remarkably improved, and the leak current density of the film is effectively reduced at the same time.

The invention provides a preparation method of a low-leakage current Bi0.92Tb0.08Fe(1-x)CrxO3 film. The method comprises the following steps of: dissolving bismuth nitrate, ferric nitrate, terbium nitrate and chromic nitrate at a molar ratio of 0.97:(1-x):0.08:x into the mixed solution of ethylene glycol monomethyl ether and acetic anhydride to form a mixed solution; adding ethanolamine into the mixed solution to adjust the viscosity and the complexing degree to obtain a stable BiFeO3 precursor liquid; and preparing a Tb and Cr co-doped crystalline BiFeO3 film by a spin-coating method and layer-by-layer annealing technology. The film is a crystalline Bi0.92Tb0.08Fe0.99Cr0.01O3 film, wherein the leakage current density is still kept below 10<-4>A / cm<2> in a 150kv / cm test electric field. According to the method provided by the invention, the requirements on equipment are simple, the experimental conditions are easy to realize, the prepared film has good uniformity, and the leakage current of the film is reduced through the co-doping of Tb and Cr.

The invention discloses a sulfur-doped MXene negative electrode material, and a preparation method thereof. The preparation method comprises the following steps: (1) respectively placing a sulfur precursor material and MXene at two sides in a quartz boat, and then transferring the quartz boat into a tube furnace, with the mass ratio of the sulfur precursor material to the MXene being (15-25):1, wherein one side, in which the sulfur precursor material is placed, of the quartz boat is positioned at the upstream of the tube furnace; and (2) introducing a protective gas, carrying out a heat treatment reaction, and conducting cooling to room temperature, washing, and out vacuum drying to obtain the sulfur-doped MXene negative electrode material, wherein the heat treatment reaction is as below:increasing the temperature from room temperature to 170-600 DEG C, conducting insulation for 1.5 h-2.5 h, reducing the temperature to 80-120 DEG C, and conducting insulation for 1.5-2.5h. The preparedsulfur-doped MXene negative electrode material is large in specific surface area, shows good electrical conductivity, improves the specific capacity and cyclic stability of a potassium ion battery, and has controllable sulfur element doping amount, and is suitable for large-scale application.

The invention provides a Bi0.9Er0.1Fe1-xCoxO3 film with high ferromagnetism and ferroelectricity, and a making method thereof. The method comprises the following steps: preparing a Bi0.9Er0.1Fe1-xCoxO3 precursor solution from bismuth nitrate, iron nitrate, cobalt nitrate and erbium nitrate, spin-coating a substrate with the Bi0.9Er0.1Fe1-xCoxO3 (x is 0.01-0.03) precursor solution, uniformly sizing, drying, and annealing to obtain the Bi0.9Er0.1Fe1-xCoxO3 film with high ferromagnetism and ferroelectricity. The method has the advantages of simple device requirements, easy reaching of experiment conditions, easy control of the doping amount, and great improvement of the ferromagnetism of a BiFeO3 film, and the Bi0.9Er0.1Fe1-xCoxO3 film made in the invention has the advantages of good uniformity, high magnetic intensity and high remanent polarization.

A preparation method of an ionic liquid-polymer composite membrane for a hydrogen chloride fuel cell comprises the following steps: a high molecular polymer substrate and an ionic liquid are dissolved in an organic solvent to prepare a membrane preparing liquid, then the ionic liquid-polymer composite membrane is prepared by a casting method, and during the method, a feed gas is in no need of humidifying. The prepared composite membrane has the advantages of high conductivity, low permeability and the like. The hydrogen chloride fuel cell prepared by use of the composite membrane can be stable in operation.

The invention provides a preparation method of a boron-doped graphene film. The preparation method comprises the following steps: 1) providing a substrate, and putting the substrate in a double-temperature-region system; and 2) providing a boron carbon solid source, putting the boron carbon solid source in the double-temperature-region system, and heating to deposit and form the boron-doped graphene film on the substrate surface. By using the growth of the boron-doped graphene film as the study subject, the existing preparation method is improved. The unique solid source is used as the carbon boron source in the preparation process to prepare the large-area high-quality graphene film at lower temperature by a one-step process; and meanwhile, the reaction temperature, reaction time, source temperature and other technological conditions are controlled to control the boron doping amount, thereby lowering the reaction temperature, saving the energy consumption and simplifying the related preparation techniques. Therefore, the method is completely suitable for preparing the large-area high-quality controllable-doping-amount boron-doped graphene film at low temperature, and can easily implement industrialized production.

The invention provides a preparation method and application of a silver vanadate / vanadium oxide one-dimensional composite nano-electrode material, which can solve the problems of high energy consumption, difficult control of components, grain diameter and appearance of a product, low electrical conductivity and poorer cyclical stability of a traditional lithium battery anode material. The invention adopts a one-step hydrothermal method which comprises the following steps of: 1. dissolving vanadium salt into 10-30 percent hydrogen peroxide to obtain a transparent peroxovanadate solution; 2. dispersing the vanadium salt into deionized water; 3. pouring a vanadium salt mixture into the peroxovanadate solution, mixing, fully stirring and pouring into a hydrothermal reaction kettle for hydrothermal reaction to obtain a product; and 4. obtaining the silver vanadate / vanadium oxide one-dimensional composite nano-electrode material through centrifugalizing, washing and drying the product. The preparation process of the invention is simple, the size of the product and the doping amount of silver are easy to control, the product has larger yield and is pure, and both the specific capacity and the cyclical stability of the silver vanadate / vanadium oxide one-dimensional composite nano-electrode material as the lithium battery anode material are markedly improved.

The invention discloses a sulfur-doped MXene composite material and a preparation method thereof, and the preparation method comprises the following steps: (1) adding MXene and a sulfur source into deionized water according to a mass ratio of 1: 1-20, stirring and heating to prepare a mixed solution with the concentration of 5-80 mg / ml; (2) transferring the mixed solution into a reaction kettle, and heating to 80-200 DEG C; reacting for 4-36h, and then cooling to room temperature; and (3) washing the product obtained in the step (2) with a detergent, centrifuging, and carrying out vacuum drying to obtain the sulfur-doped MXene composite material. The prepared sulfur-doped MXene composite material has the advantages of high structural stability, stable cycle performance, high charge-discharge coulombic efficiency and the like, and the prepared negative electrode material is moderate in potassium intercalation / deintercalation potential and good in cycle performance and rate capability.

The invention relates to a method for preparing nitrogenous dopant for preparing a czochralski silicon single crystal, which comprises the following steps: (1) placing a polysilicon material and high-purity silicon nitride particles into a crucible, heating to 1,450 DEG C so that a polycrystal is melted and then maintaining the melting state of fusant at 1,450-1,470 DEG C; maintaining the cruciblerevolution of 10-12 rpm; (2) leading the mass ratio of the polysilicon material and the high-purity silicon nitride particles to be 6,000 / 1-5,500 / 1; (3) after the silicon nitride particles floating on the surface of the fusant are completely melted, preserving the temperature for 1 to 2 hours; (4) raising the crucible to the crucible level of 100mm-400mm and switching the flow of argon to 100slpm-400slpm so that the fusant is rapidly cooled; (5) crushing the obtained cooled nitrogenous dopant into small blocks by a silicon carbide hammer and uniformly mixing; (6) soaking by chemical pure hydrofluoric acid to remove silicon dioxide on alloy, washing the soaked dopant by pure water and placing into an oven for standby after being dried. The method is simple and convenient, a nitrogen element is mixed into the crystal by the nitrogenous dopant without an additional device and a working procedure, and the mixing dosage in the crystal is easy to control, thereby achieving the prospective mixing requirement.

The invention belongs to the field of photoelectric materials, and provides a preparation method of an ITO thin film. The preparation method of the ITO thin film comprises the following steps that an indium source and a tin source are dissolved to prepare an indium source and tin source mixture organic solution, stabilizers and surfactants are added for ageing processing, and then ITO sol is obtained; after one time of pulling coating is conducted on the ITO solution on a base body, high-temperature preheating processing is conducted, then annealing processing is conducted, and the ITO thin film is obtained. The high-temperature preheating processing method comprises the step of preheating the base body coated with the ITO solution for 30 min in a muffle furnace at the temperature of 400-600 DEG C in the air atmosphere. According to the preparation method of the ITO thin film, the ITO thin film is prepared by the adoption of the sol-gel dip-coating technology. The preparation method is simple, the doping amount is easy to control, the obtained ITO thin film is flat in surface and compact in particle, the transmittance in the visible light region of the obtained ITO thin film reaches 90%, the electrical resistivity of the obtained ITO thin film reaches 4-10 levels, the power function of the obtained ITO thin film reaches 4.9 eV, and the requirement for thin film electrodes of solar cells can be met.

The invention discloses a method for preparing a Ni-doped AlN-based diluted magnetic semiconductor thin-film material. The method comprises the steps of: adopting Al target and metallic nickel pieces for magnetic control co-sputtering for 60 minutes, wherein the background vacuum degree of a system is 10<4>Pa-10<5>Pa, the working gases are high-purity nitrogen and high-purity argon in the sputtering process, the proportion between the argon and the nitrogen is 7: 3, the sputtering air pressure is 1.5Pa, the substrate temperature is 370 DEG C, the sputtering power is 300W, a substrate is an n-type Si (100), and the distance between the target material and the substrate is 60mm; and cleaning the substrate for removing the surface impurities, and then obtaining the AlN-based diluted magnetic semiconductor thin-film material with different dosage concentrations by changing the number of the nickel pieces. The method is simple in preparation technique and high in rate of deposition, can be used for obtaining the diluted magnetic semiconductor thin-film material which has ferromagnetism at room temperature, high Curie temperature and controllable performances without any subsequent treatment, and has important research value and wide application prospect.

The invention provides a Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film and a preparation method thereof. The preparation method comprises the following steps: preparing a Bi(1-x)RExFe0.96Co0.02Mn0.02O3 precursor solution from bismuth nitrate, ferric nitrate, cobalt nitrate, manganese acetate and nitric acid RE which serve as raw materials, wherein x is 0.06-0.12, and RE is La, Eu or Er; and coating the precursor solution on a substrate in a spinning manner, uniformly coating, baking and annealing to obtain the Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film. By adopting the method, requirement for equipment is simple, the experiment condition can be easily achieved, the doping amount can be easily controlled, and the ferroelectric performance of the film can be greatly improved, so that the prepared Bi(1-x)RExFe0.96Co0.02Mn0.02O3 ferroelectric film has good uniformly, less current leakage and high remanent polarization.

The invention discloses a preparation method of a nitrogen-sulfur co-doped three-dimensional graphene foam electrode material, comprising the following steps: soaking foamed nickel in a dispersion liquid comprising graphene oxide, melamine, melamine thiocyanate and sufficient solvent; carrying out a solvothermal reaction; performing heat treatment on a solvothermal reaction product at 500 to 1200DEG C in inert atmosphere; and preparing nitrogen-sulfur co-doped three-dimensional graphene foam by strong acid etching of nickel foam in the heat-treated product. The nitrogen-sulfur co-doped three-dimensional graphene foam electrode material prepared by the method has three-dimensional doped graphene foam and doped nitrogen and sulfur elements. The content of nitrogen element, sulfur element and oxygen element is 3 - 7%, 1 - 3% and 4 - 12%, respectively. The doping amount is controllable. The experimental method is safe, non-toxic, low cost and easy to operate. The three-dimensional doped graphene foam electrode can be used in the fields of lithium ion batteries, supercapacitors and electrocatalysis, and has broad application prospects.

The invention discloses a multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film and a preparation method thereof. The composite film comprises a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 (x=0.01-0.05) crystalline film in the upper layer and a CuFe2O4 crystalline film in the lower layer. The preparation method comprises respectively preparing a Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 precursor solution and a CuFe2O4 precursor solution, carrying out spin-coating on a substrate with multiple CuFe2O4 films and carrying out spin-coating on the CuFe2O4 film with multiple Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3 films to obtain the multiferroic Bi0.83Pr0.15Sr0.02Fe0.97-xMn0.03CuxO3-CuFe2O4 composite film. The preparation method has simple equipment requirements, can prepare the film with good uniformity, easily controls a doping amount, improves ferroelectric and ferromagnetic properties of the film and effectively reduces film leakage current density.

The invention relates to a method for doping silicon-based film by eutectic growth, belonging to the technical field of film silicon materials. The method comprises the following steps of: firstly, arranging a hot filament chemical vapor deposition system and a magnetron sputtering system on the chamber body wall of a vacuum chamber; placing the cleaned substrate on a sample base of the vacuum chamber; introducing reactant gases, namely argon gas and hydrogen gas and silicane into the vacuum chamber; heating a hot filament; applying direct current bias to the magnetron sputtering system; and opening a baffle in front of a magnetron sputtering target and the hot filament to prepare the silicon-based film. Compared with the prior art, the method has the advantages that the content of doped elements in the prepared film is very uniform and mutant doping can be realized. In addition, the required equipment is simple, the doping ratio is easy to control and the film with high doping concentration and low ion damage can be prepared; and the method has the characteristics of convenience for operation, repeatability and reliability as well as broad application prospect.

The invention discloses a preparation method of an Si-doped AlN diluted magnetic semiconductor film, which uses high-purity nitrogen as work gas, high-purity Al targets and silicon wafers are adopted for in-situ co-sputtering, the background vacuum degree of a system is 10<-5>Pa to 10<-4> Pa, a substrate is n type Si(100), the distance from the targets and the substrate is 60mm, the sputtering power is 300W, the sputtering air pressure is 1.5Pa, and the substrate temperature is 370 DEG C, and the sputtering time is 60min. After the substrate is cleaned, and surface impurities are removed, the AlN diluted magnetic semiconductor film with different doping concentrations are obtained through changing the number of the doping silicon wafers. The method has the advantages that the preparation deposition velocity is high, the process is simple, and in addition, the diluted magnetic semiconductor film materials with the room temperature ferromagnetism and high Curie temperature can be obtained without any subsequent treatment, so the method has important study value and wide application prospects.