The invention discloses a preparation method of an Si-doped AlN diluted magnetic semiconductor film, which uses high-purity nitrogen as work gas, high-purity Al targets and silicon wafers are adopted for in-situ co-sputtering, the background vacuum degree of a system is 10<-5>Pa to 10<-4> Pa, a substrate is n type Si(100), the distance from the targets and the substrate is 60mm, the sputtering power is 300W, the sputtering air pressure is 1.5Pa, and the substrate temperature is 370 DEG C, and the sputtering time is 60min. After the substrate is cleaned, and surface impurities are removed, the AlN diluted magnetic semiconductor film with different doping concentrations are obtained through changing the number of the doping silicon wafers. The method has the advantages that the preparation deposition velocity is high, the process is simple, and in addition, the diluted magnetic semiconductor film materials with the room temperature ferromagnetism and high Curie temperature can be obtained without any subsequent treatment, so the method has important study value and wide application prospects.