Method for preparing Ni-doped AlN-based diluted magnetic semiconductor thin-film material

A technology of dilute magnetic semiconductor and thin film materials, applied in the application of magnetic film to substrate, metal material coating process, ion implantation plating, etc., can solve the problems of high cost and complicated preparation process, and achieve high deposition rate, The preparation process is simple and the doping amount is easy to control

Inactive Publication Date: 2011-08-17
XINJIANG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of the present invention is to provide a method for preparing a ferromagnetic Ni-doped AlN film at room temperature by magnetron sputtering to solve the problems of complex preparation process and high cost in the prior art

Method used

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  • Method for preparing Ni-doped AlN-based diluted magnetic semiconductor thin-film material
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  • Method for preparing Ni-doped AlN-based diluted magnetic semiconductor thin-film material

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Embodiment 1

[0027] Dry the cleaned n-type Si(100) substrate and put it into a vacuum chamber. The distance between the substrate and the target is 60mm. sheet (length 10mm, width 1mm), the nickel sheet is symmetrically placed on the Al target, and the Al target and the nickel sheet are co-sputtered. Vacuum down to 2×10 -4 Pa. The working gas in the sputtering process is high-purity nitrogen and high-purity argon, the ratio of argon to nitrogen is 7:3, the working pressure in the sputtering process is 1.5Pa, and the temperature of the substrate is 370°C. Before the official sputtering, adjust the sputtering power to 200W to pre-sputter the target for 20 minutes to remove impurities and oxide layers on the target surface. After the pre-sputtering is completed, the sputtering power is adjusted to 300W, and the sputtering is started, and the sputtering time is 60min.

[0028] From figure 1 It can be seen that the prepared thin film is AlN, and the M-H curve of the sample is obtained by a ...

Embodiment 2

[0030] Dry the cleaned n-type Si (100) substrate and put it into a vacuum chamber. The distance between the substrate and the target is 60 mm. The target is Al (80 mm in diameter) with a purity of 99.999% and six pieces of nickel with a purity of 99.99%. sheet (length 10mm, width 1mm), the nickel sheet is symmetrically placed on the Al target, and the Al target and the nickel sheet are co-sputtered. Vacuum down to 2×10 -4 Pa. The working gas in the sputtering process is high-purity nitrogen and high-purity argon, the ratio of argon to nitrogen is 7:3, the working pressure in the sputtering process is 1.5Pa, and the temperature of the substrate is 370°C. Before the official sputtering, adjust the sputtering power to 200W to pre-sputter the target for 20 minutes to remove impurities and oxide layers on the target surface. After the pre-sputtering is completed, the sputtering power is adjusted to 300W, and the sputtering is started, and the sputtering time is 60min.

[0031] F...

Embodiment 3

[0033] Dry the cleaned n-type Si (100) substrate and put it into a vacuum chamber. The distance between the substrate and the target is 60mm. The target is Al (80mm in diameter) with a purity of 99.999% and nine pieces of nickel with a purity of 99.99%. sheet (length 10mm, width 1mm), the nickel sheet is symmetrically placed on the Al target, and the Al target and the nickel sheet are co-sputtered. Vacuum down to 2×10 -4 Pa. The working gas in the sputtering process is high-purity nitrogen and high-purity argon, the ratio of argon to nitrogen is 7:3, the working pressure in the sputtering process is 1.5Pa, and the temperature of the substrate is 370°C. Before the official sputtering, adjust the sputtering power to 200W to pre-sputter the target for 20 minutes to remove impurities and oxide layers on the target surface. After the pre-sputtering is completed, the sputtering power is adjusted to 300W, and the sputtering is started, and the sputtering time is 60min.

[0034] Fr...

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Abstract

The invention discloses a method for preparing a Ni-doped AlN-based diluted magnetic semiconductor thin-film material. The method comprises the steps of: adopting Al target and metallic nickel pieces for magnetic control co-sputtering for 60 minutes, wherein the background vacuum degree of a system is 10<4>Pa-10<5>Pa, the working gases are high-purity nitrogen and high-purity argon in the sputtering process, the proportion between the argon and the nitrogen is 7: 3, the sputtering air pressure is 1.5Pa, the substrate temperature is 370 DEG C, the sputtering power is 300W, a substrate is an n-type Si (100), and the distance between the target material and the substrate is 60mm; and cleaning the substrate for removing the surface impurities, and then obtaining the AlN-based diluted magnetic semiconductor thin-film material with different dosage concentrations by changing the number of the nickel pieces. The method is simple in preparation technique and high in rate of deposition, can be used for obtaining the diluted magnetic semiconductor thin-film material which has ferromagnetism at room temperature, high Curie temperature and controllable performances without any subsequent treatment, and has important research value and wide application prospect.

Description

technical field [0001] The invention belongs to the field of preparation of novel semiconductor spintronic device materials, and relates to the preparation of dilute magnetic semiconductor materials, in particular to the preparation of Ni-doped AlN-based dilute magnetic semiconductor film materials with room temperature ferromagnetism and high Curie temperature. Background technique [0002] In recent years, dilute magnetic semiconductors (Diluted Magnetic Semiconductors, DMSs) have attracted extensive attention in the field of spintronics, because they can use both the charge and spin properties of electrons, so they are non-volatile at high densities. It has broad application prospects in the fields of volatile memory, magnetic sensor and semiconductor circuit integrated circuit, optical isolation device and semiconductor laser integrated circuit, and quantum computer. [0003] AlN is an important wide-bandgap semiconductor material with good optoelectronic and piezoelectr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06H01F41/18
Inventor 吴荣潘东简基康姜楠楠李锦孙言飞
Owner XINJIANG UNIVERSITY
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