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A preparation method of uniformly doped one-dimensional dilute magnetic semiconductor material

A dilute magnetic semiconductor and uniform doping technology, which is applied in semiconductor/solid-state device manufacturing, nanotechnology for materials and surface science, zinc oxide/zinc hydroxide, etc., can solve the problem that the nanostructure morphology is not easy to control , to achieve high sample purity and crystallinity, low manufacturing and production costs, and improved performance

Inactive Publication Date: 2017-12-22
XINYANG NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the (2) method, although a higher concentration of doping can be achieved, most of the prepared samples are thin film materials, and the morphology of the nanostructure is very difficult to control

Method used

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  • A preparation method of uniformly doped one-dimensional dilute magnetic semiconductor material
  • A preparation method of uniformly doped one-dimensional dilute magnetic semiconductor material
  • A preparation method of uniformly doped one-dimensional dilute magnetic semiconductor material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] (1) Take zinc powder with a purity of 99.99% and manganese dioxide powder with a purity of 99.9% in a molar ratio of 19:1 with an electronic balance, and use an agate mortar to mix the two evenly and put them into a quartz tube. bottom, such as figure 1 As shown, the quartz tube is placed on a horizontal long quartz glass plate, and finally the quartz plate is sent to a suitable position in the horizontal tube furnace, and the tube furnace is sealed with a stainless steel flange;

[0029] (2) Use a mechanical pump to evacuate the tube furnace, and start heating the quartz tube after 30 minutes at a heating rate of 10° C. / min. During the heating process, argon was passed as a protective gas, and the fluid flow rate was set at 100 Sccm.

[0030] (3) When the temperature of the zinc powder is raised to 520° C., oxygen is introduced, and the flow rate is set to 30 Sccm. When the zinc powder and manganese dioxide powder reach 800°C, keep the constant temperature for 60 min...

Embodiment 2

[0034] (1) Use an electronic balance to weigh zinc powder with a purity of 99.99% and manganese chloride powder with a purity of 99.9% in a molar ratio of 9:1, and put them into the bottom of quartz tubes with different lengths, and then place two quartz tubes The tube is placed on a horizontal long quartz plate, the silicon substrate is placed horizontally at the quartz tube mouth, and finally the quartz plate is sent to a suitable position in the tube furnace, and the tube furnace is sealed with a stainless steel flange.

[0035] (2) Use a mechanical pump to evacuate the tube furnace. Manganese chloride powder and zinc powder are heated to 800°C and 550°C after 80 minutes, and then oxygen is introduced to keep the manganese chloride at a constant temperature. After the zinc powder reaches 650°C Keep the constant temperature for 30 minutes. During the heating process, argon was passed as a protective gas, and the flow rate was set at 100 Sccm.

[0036] (3) After the reaction...

Embodiment 3

[0039] (1) Use an electronic balance to weigh zinc powder with a purity of 99.99% and manganese chloride powder with a purity of 99.9% at a molar ratio of 9:1, and put them into the bottom of quartz tubes with different lengths. Then place the two quartz tubes on a long horizontal quartz plate as figure 2 As shown, place the silicon substrate horizontally at the mouth of the quartz tube. Finally, the quartz plate is sent to a suitable position in the tube furnace, and the tube furnace is sealed with a stainless steel flange.

[0040] (2) Use a mechanical pump to evacuate the tube furnace, manganese chloride powder and zinc powder are heated to 800°C and 550°C respectively after 80 minutes, and then oxygen is introduced to keep the manganese chloride at a constant temperature, and the zinc powder reaches 650°C After that, keep the constant temperature for 30 minutes. During the heating process, argon was passed as a protective gas, and the flow rate was set at 100 Sccm.

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Abstract

The invention discloses a preparation method of a uniformly-doped one-dimensional diluted magnetic semiconductor material. The preparation method comprises the following steps: weighing zinc powder and metal oxide in a mole ratio of 9:1-19:1, and putting the zinc powder and metal oxide on the bottom of a quartz tube; respectively setting the heating rates of the zinc powder and metal oxide, sealing the tube furnace, charging protective gas, heating the quartz tube, and starting introducing reactant gas when the temperature reaches 520 DEG C; under the protection of the protective gas, heating the quartz tube to 600-800 DEG C at the rate of 10 DEG C / minute, and introducing oxygen at the flow rate of 20-40 Sccm until the reaction finishes; and finally, cooling in a vacuum atmosphere, cooling to room temperature, taking out the sample, and directly carrying out characterization. The method implements uniform doping of manganese, cobalt and other elements in ZnO nanowires, and besides, the doped parent does not generate any impure phase. The method disclosed by the invention is suitable for doping multiple metal oxides, including zinc oxide, manganese oxide, cobalt oxide, nickel cobaltate, nickel manganate and the like.

Description

technical field [0001] The invention relates to the technical field of preparation of metal oxide nanomaterials, in particular to a method for preparing uniformly doped one-dimensional dilute magnetic semiconductor materials. Background technique [0002] Today's society is dominated by information, and the processing, transmission and storage of information require unprecedented scale and speed. The charge and spin properties of electrons play an important role in information processing and transmission, but the research on electronic charge and spin properties is developed in parallel. Diluted magnetic semiconductors integrate the charge and spin of electrons, and the spin devices made of dilute magnetic semiconductor nanostructures have the advantages of stable structure, low power consumption, no pollution, and fast response. Metal-doped ZnO is a very important research direction in the field of dilute magnetic semiconductor materials. [0003] At present, there are tw...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02C01G45/02C01G9/03
CPCB82Y30/00C01G45/02C01P2002/72C01P2004/03C01P2004/16C01P2004/62C01P2004/82C01P2006/42
Inventor 罗永松闫海龙彭涛陆阳程晋炳罗荣杰候晓艺
Owner XINYANG NORMAL UNIVERSITY
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