814 results about "Tin oxide" patented technology

The invention relates to the field of architectural ceramics, and discloses a sapphire effect dry particle, a ceramic tile with a sapphire imitation effect and a preparation method of the ceramic tile. The sapphire effect dry granules comprise blue dry granules and transparent dry granules, wherein the blue dry granules are prepared from the following raw materials: 1.5 to 3.5 parts of superfine tin dioxide, 15 to 19.5 parts of cobalt oxide, 4.5 to 7.5 parts of titanium oxide, 8 to 14 parts of zinc oxide, 32 to 43 parts of calcined aluminum oxide, 8 to 13 parts of quartz, 10 to 16 parts of potassium feldspar and 2.5 to 4.5 parts of boric acid; the transparent dry particles comprise the following raw materials in parts by weight: 8-15 parts of zinc oxide, 5-10 parts of aluminum oxide, 24-28 parts of quartz, 1-2.5 parts of nano silicon nitride and 7-11 parts of cryolite. By mixing the two dry granules, the frit dry granules which have a three-dimensional effect and an ice crack texture and imitate the texture of sapphire crystals can be prepared. The ceramic tile with the sapphire-like effect can be prepared by adopting the dry particles with the sapphire effect.

The invention relates to the technical field of synthesis and preparation of nano materials, in particular to a method for preparing tin dioxide powder, which comprises the following steps: S1, preparing a 0.1-5 mol / L tin salt solution, adding a compound additive into the tin salt solution, and carrying out ball milling treatment after ultrasonic dispersion to obtain a pretreated tin salt solution; s2, freezing and freezing the pretreated tin salt solution in an ultralow-temperature environment to obtain a frozen sample; s3, transferring the frozen sample into a vacuum freeze dryer for dehydration treatment to obtain solid powder; and S4, carrying out high-temperature calcination on the solid powder to obtain tin dioxide powder. Zero sewage discharge is achieved in the preparation process, the problem of sewage discharge and treatment of traditional liquid-phase powder preparation is solved, meanwhile, the phenomenon of sintering agglomeration accompanied by traditional solid-phase calcination can be avoided, high-quality superfine tin dioxide powder preparation is achieved, the method is simple and safe in process, and industrial large-scale production and preparation are easy to achieve.

The invention belongs to the technical field of photovoltaic coatings, and discloses a photovoltaic coating as well as a preparation method and application thereof. The photovoltaic coating is prepared from the following raw materials: a solvent, an ultraviolet light absorber, a wetting agent, an antistatic agent, modified hydrophilic silicon dioxide, nano magnesium fluoride and nano tin dioxide, the modified hydrophilic silicon dioxide is hydrophilic silicon dioxide modified by ethylenediamine and glacial acetic acid. A coating formed by the photovoltaic coating is high in adhesive force and resistant to aging, and the light transmittance, the self-cleaning property and the antistatic property of photovoltaic glass can be obviously improved.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

The invention belongs to the field of optoelectronic materials, and provides a dielectric / metal / dielectric multilayer transparent electrode material which sequentially comprises a substrate, a dielectric layer 2, a metal layer and a dielectric layer 1, the material of the dielectric layer 2 comprises metal oxide doped zinc oxide a; the material of the dielectric layer 1 comprises metal oxide doped zinc oxide b; furthermore, the metal oxide doped zinc oxide a and the metal oxide doped zinc oxide b are respectively and independently selected from one or more of aluminum oxide doped zinc oxide and tin oxide doped zinc oxide. Correspondingly, the invention also provides a preparation method of the dielectric / metal / dielectric multilayer transparent electrode material. Compared with a conventional dielectric / metal / dielectric multilayer transparent electrode material, the dielectric / metal / dielectric multilayer transparent electrode material disclosed by the invention is obviously more stable in photoelectric property, and the sheet resistance stability of the dielectric / metal / dielectric multilayer transparent electrode material is obviously improved especially in a high-temperature and high-humidity environment.

The invention relates to the technical field of electronic glass fiber materials, and particularly discloses a corrosion-resistant low-dielectric glass fiber and a preparation process thereof. A preparation process of corrosion-resistant low-dielectric glass fibers comprises the following steps: S1, uniformly mixing glass fiber raw materials, melting, clarifying, homogenizing, cooling, and carrying out wiredrawing treatment to obtain glass fiber precursors; and S2, sequentially carrying out plasma treatment and impregnating compound treatment on the glass fiber precursor, drying and curing to obtain the corrosion-resistant low-dielectric glass fiber, silicon dioxide, aluminum oxide, magnesium oxide, boric oxide, calcium fluoride, tin oxide, sodium oxide, potassium oxide and rare earth oxide are used as glass fiber raw materials, and the rare earth oxide is a mixture of gadolinium oxide, cerium oxide and samarium oxide. The obtained glass fiber has excellent low dielectric property and corrosion resistance, and has a wide market prospect.

The invention relates to the technical field of glass, in particular to an alkali-free aluminoborosilicate glass composite clarifying agent and a clarifying method thereof. The alkali-free aluminoborosilicate glass composite clarifying agent is prepared from the following raw materials in percentage by mass on the basis of the total mass of alkali-free aluminoborosilicate glass: 0.4 to 5.5 percent of halogen alkaline earth metal salt, 0.03 to 0.4 percent of lanthanum oxide, 0.01 to 0.4 percent of tin dioxide and 0.01 to 0.3 percent of cerium dioxide. The alkali-free aluminoborosilicate glass composite clarifying agent is applied to alkali-free aluminoborosilicate glass, and the problems that the alkali-free aluminoborosilicate glass is poor in clarifying effect and has many bubble defects are solved; the corrosion of high-temperature molten glass to refractory materials at parts such as a tank furnace and the like is reduced, so that the number of stone defects of the refractory materials in the glass is reduced, and the service life of the refractory materials of the furnace is prolonged.

The invention discloses a stannic oxide-based ammonia gas sensor as well as a preparation method and application thereof, relates to the technical field of gas sensors, and solves the problems of high detection lower limit, poor gas selectivity and low sensitivity of a traditional semiconductor ammonia gas sensor. A sensitive material based on oxygen vacancy regulation and control SnO2 / ZIF-67 is prepared on the surface of an interdigital gold electrode by adopting a chemical vapor deposition method, a planar electrode, an aluminum oxide ceramic substrate, a heater and a Pt wire are welded and packaged according to a general indirectly-heated gas sensitive element, and the SnO2 / ZIF-67 semiconductor ammonia gas sensor is prepared. The lower detection limit of the SnO2 / ZIF-67 semiconductor ammonia gas sensor is 1 ppm; meanwhile, the NH3 selectivity and sensitivity of the sensor are improved through the synergistic effect of SnO2 and ZIF-67, and the sensor can be used for detecting ammonia gas leakage and can be applied to judging the safety of ammonia gas in chemical production operation, environmental gas detection and other applications.

The invention relates to a preparation method of an oxygen vacancy-rich bismuth molybdate / bismuth vanadate composite photo-anode and a product and application thereof, and belongs to the technical field of photoelectrocatalysis. The invention discloses a preparation method of an oxygen vacancy-rich bismuth molybdate / bismuth vanadate (Bi2Mo2O9 / BiVO4) composite photo-anode, which mainly comprises the following steps: immersing a fluorine ion-doped tin dioxide (FTO) conductive glass substrate into a Bi < 3 + > ion solution and an I <-> ion solution to form a bismuth oxyiodide (BiOI) film, dropwise adding a dimethyl sulfoxide solution of vanadyl acetylacetonate (VO (acac) 2), and putting into a muffle furnace to prepare the BiVO4 photo-anode. And then vertically immersing into a Bi < 3 + > ion solution and a Mo < 6 + > ion solution, and carrying out annealing treatment in an argon atmosphere to prepare the Bi2Mo2O9 / BiVO4 composite photoanode rich in oxygen vacancies. The Bi2Mo2O9 / BiVO4 material rich in oxygen vacancies is a metal oxide composite photo-anode, the photoelectrocatalysis efficiency can be improved, and hydrogen peroxide (H2O2) can be continuously generated in natural seawater through photoelectrocatalytic oxidation of water for a long time.

A solar cell and a preparation method thereof belong to the field of photovoltaic technology, the solar cell at least comprises a substrate, a tunneling oxide layer, a tin oxide layer and a doped polycrystalline silicon layer, along the thickness direction of the substrate, the tunneling oxide layer is arranged on the surface of the substrate, the tin oxide layer is arranged on the surface of the tunneling oxide layer, and the doped polycrystalline silicon layer is arranged on the surface of the substrate. The doped polycrystalline silicon layer is arranged on the surface of the tin oxide layer, so that the tin oxide layer is located between the tunneling oxide layer and the doped polycrystalline silicon layer. The phosphorus doping concentration alpha of the tunneling oxide layer satisfies 1 * 10 < 13 > cm <-3 > < = alpha < = 1 * 10 < 16 > cm <-3 >, the phosphorus doping concentration beta of the tin oxide layer satisfies 1 * 10 < 15 > cm <-3 > < = beta < = 1 * 10 < 20 > cm <-3 >, and the phosphorus doping concentration gamma of the doped polycrystalline silicon layer satisfies 1 * 10 < 19 > cm <-3 > < = gamma < = 1 * 10 < 21 > cm <-3 >. The tin oxide layer is arranged between the tunneling oxide layer and the doped polycrystalline silicon layer, the tin oxide layer has excellent conductivity and light transmission, parasitic absorption is reduced, more light is absorbed by the substrate, and the photoelectric conversion efficiency of the solar cell is improved.

The present invention discloses a novel gas-sensitive material, specifically a method for preparing a core-shell nanofiber gas-sensitive material based on a platinum-doped cobalt oxide / tin oxide heterostructure. The present invention utilizes a cobalt source, a tin source, a platinum source, and a polymer as raw materials, and produces a nanoscale platinum-doped cobalt oxide / tin oxide gas-sensitive material with high sensitivity and rapid response to hydrogen sulfide gas via coaxial electrospinning. This gas-sensitive material exhibits excellent gas-sensing properties for H2S gas at room temperature, with a short response time, enabling rapid detection of low-concentration H2S gas, a short recovery time, and excellent cyclic stability. Therefore, the gas-sensitive material of the present invention possesses excellent sensitivity and stability, and has broad application prospects, including applications in environmental monitoring, industrial safety, and gas sensors.

The embodiment of the invention provides a connecting layer, a composite layer, a solar cell and a laminated cell. The connecting layer comprises a first transparent conductive layer and a hole transport layer which are stacked; and the hole transport layer is an alloy film containing Ga, Al, In, Sn, O and N elements. Component regulation and control are carried out on the hole transport layer, P-type doping is realized by utilizing a co-doping strategy, the hole concentration of a traditional tin oxide material layer is improved, long wavelength absorption is not remarkably increased, and in addition, multi-component doping can also avoid that a single component is easy to separate out and split phases.

An electrophotographic member having a base layer and a surface layer, wherein the surface layer comprises a binder resin; and a plurality of particles comprising a conductive tin oxide, in the binder resin, a content ratio of the particles comprising a conductive tin oxide, in the surface layer, is 2.0 to 10.0 vol %, and a value of an L function denoting a relationship of a distribution of the particles comprising a conductive tin oxide, as observed from a surface of the surface layer, is always positive in a range of 300 nm to 1 μm of a distance from barycentric coordinates of the particles.

The invention discloses a nickel-tin alloy-oxide composite material Ni3Sn2-NiSnOx, a preparation method thereof and application of the nickel-tin alloy-oxide composite material Ni3Sn2-NiSnOx in electrocatalytic ammonia synthesis reaction, and belongs to the technical field of electrochemical catalysis. The preparation method comprises the following steps: adding SnCl2. 2H2O and NiCl into deionized water as raw materials, adding glycine, potassium pyrophosphate and urea as electro-deposition auxiliary agents, and stirring for 10 minutes to obtain electro-deposition liquid; and carrying out electro-deposition on a conductive substrate serving as a cathode, so that Ni and Sn are co-deposited to form a nickel-tin alloy, and part of the nickel-tin alloy reacts with oxygen in the deposition process or after deposition to form a nickel-tin oxide phase, so that the Ni3Sn2-NiSnOx composite catalytic material is obtained. By regulating and controlling the concentration of tin ions in the electroplating solution and the electrodeposition time, the component proportion of nickel and tin in the product and the morphology structure of the material can be regulated. The composite material provided by the invention has excellent electrocatalytic nitrogen reduction synthesis ammonia activity and selectivity, and solves the problems that the service life of a catalyst is shortened and the catalytic activity and stability are reduced due to irreversible reconstruction of an alloy compound under high potential.

The invention provides a surface modified carbon negative electrode material, a preparation method thereof and a battery. The preparation method comprises the following steps: mixing a graphite carbon source and a pore-forming agent, and graphitizing the obtained mixture to form porous graphite; performing oxidation treatment on the porous graphite to prepare porous graphite oxide particles; the porous graphite oxide particles are placed in a tin source solution containing tin cations, the tin source solution is attached to the surfaces of holes of the porous graphite oxide particles, and tin oxide attached to the surfaces of the holes of the porous graphite oxide particles is formed based on the tin source solution; and the porous graphite oxide particles are placed in a carbon-containing reducing gas environment to be subjected to calcination treatment, and the carbon-coated tin nanowires are prepared on the basis of the tin oxide. According to the preparation method, the surface and holes of the carbon negative electrode material are modified by adopting the carbon-coated tin nanowires, so that the discharge performance of the battery at relatively high rate can be effectively improved.

The invention discloses an infrared barrier PVB (polyvinyl butyral) intermediate film and a preparation method, and relates to the technical field of environmental functional glass materials, the intermediate film comprises 60-75 parts of polyvinyl butyral resin, 25-35 parts of a plasticizer, 0.5-3 parts of nano tin antimony oxide, 0.1-0.5 part of an ultraviolet absorbent, 0.05-0.2 part of an antioxidant and 0.1-0.5 part of a dispersant, the preparation method comprises the steps of nano infrared blocking agent pre-dispersion, mixing, twin-screw extrusion molding, tape casting cooling, surface treatment and the like, the surface-modified nano tin antimony oxide is introduced as the infrared blocking agent, infrared radiation at the wave band of 780-1300 nm is effectively blocked, the infrared blocking rate reaches 85% or above, the visible light transmittance is larger than 80%, the technology is mature and stable, the cost is low, and the preparation method is suitable for industrial production. The prepared intermediate film can be applied to building and automobile laminated glass, and the heat insulation and energy saving effects are achieved.

An electrochemical device and an electronic device. The electrochemical device comprises a positive electrode sheet, wherein the positive electrode sheet comprises a positive electrode current collector and a positive electrode active material layer arranged on at least one surface of the positive electrode current collector. The positive electrode active material layer comprises conductive particles, wherein the conductive particles comprise at least one of antimony-doped tin oxide (SnO)x1(Sb2O3)x2 or aluminum-doped zinc oxide (ZnO)y1(Al2O3)y2, with the ratio of x1:x2 ranging from 80:20 to 95:5, and the ratio of y1:y2 ranging from 85:15 to 99:1. The antimony-doped tin oxide (SnO)x1(Sb2O3)x2 and the aluminum-doped zinc oxide (ZnO)y1(Al2O3)y2 have good conductivity and a poor adsorption capacity, such that the conductivity of the conductive particles can be improved. The arrangement is beneficial for improving the conductivity of the conductive particles, thereby improving the cycle performance of the electrochemical device.

The invention discloses a gallium-cerium co-doped ITO target material and a preparation method thereof, and belongs to the field of transparent conductive oxide ceramic target materials, and the preparation method comprises the following steps: weighing indium oxide powder raw materials, tin oxide powder raw materials, gallium oxide powder raw materials and cerium oxide powder raw materials in proportion, and performing pretreatment; the raw material powder is subjected to independent ball milling till the raw materials reach the preset particle size; mixing the four kinds of slurry, and continuously performing ball milling to obtain uniform mixed slurry; adding a binder into the mixed slurry, and carrying out ball milling and mixing to form stable formed slurry; carrying out spray granulation on the formed slurry to obtain spherical precursor powder; pressing and forming the precursor powder to obtain a biscuit, then putting the biscuit into a sintering furnace, carrying out stepped sintering in an oxygen atmosphere, and naturally cooling to obtain the gallium-cerium co-doped ITO target material. According to the gallium-cerium co-doped ITO target material prepared by the method, the relative density is greater than or equal to 99.4%, the resistivity is less than or equal to 99.4%, and the three-point bending strength is greater than or equal to 230MPa.

The invention provides a high-stability electron transport layer and a perovskite solar cell. A preparation method of the electron transport layer comprises the following steps: evaporating a layer of fullerene (C60) on a substrate on which a hole transport layer and a perovskite thin film layer are prepared; a layer of graphite-like phase carbon nitride (g-C3N4) is spin-coated on the C60; and finally, depositing a layer of tin oxide (ALD-SnO2) by utilizing atomic layer deposition. The g-C3N4 has good electrical conductivity, not only can fill some gaps between C60 and ALD-SnO2, but also can interact with C60 and ALD-SnO2, so that the C60 and ALD-SnO2 are attached more tightly, and the interface stability is improved. The prepared high-stability electron transport layer is applied to a perovskite solar cell device, and the stability of a perovskite solar cell is remarkably improved.

The invention discloses a PC (polycarbonate) / ABS (acrylonitrile butadiene styrene) composition and a preparation method thereof. The PC / ABS composition is prepared from the following raw materials: PC resin, ABS resin, a phosphorus-containing acrylate flexibilizer, an SMA-g-SiO2 compatilizer, functionalized POSS (polyhedral oligomeric silsesquioxane), modified basic copper phosphate, modified tin oxide and a hindered phenol antioxidant. The PC / ABS composition has excellent mechanical property, flame retardant property, low dielectric property and laser forming property, and can be widely applied to the field of communication requiring laser forming property.

The present application relates to the technical field of photovoltaic cells, and discloses a multi-element doped tin oxide-based target material, a preparation method therefor, and a use thereof. The described tin oxide-based target material comprises the following components by mass proportion: tin oxide, 95%-98%; zinc oxide, 1%-3%; antimony oxide, 0.5%-1%; cerium oxide, 0.5%-1%. In the tin oxide-based target material of the present application, the zinc oxide doping can promote sintering of the tin oxide-based target material; the cerium oxide doping promotes the growth of tin oxide lattices, and also generates a large number of electrons, which greatly increases the conductivity of a sintered body; the antimony oxide doping provides a large number of free electrons, effectively reducing the resistivity of the tin oxide.

The invention relates to the field of conductive film material processing, and particularly discloses a preparation process of a high-transparency conductive film, which comprises the following steps: S1, mixing aluminum oxide and zinc oxide to obtain mixed powder, grinding, and sintering to obtain an AZO target material; antimony trioxide and tin oxide are mixed to obtain a mixture, and the mixture is sintered into an ATO target material after being subjected to spheroidal graphite treatment; s2, mixing an AZO target material and an ATO target material to obtain a composite material, stirring to obtain a mixed material, sputtering the mixed material on a substrate through magnetron sputtering, controlling the preheating temperature of the substrate at 55-65 DEG C, and coating to obtain a finished product, the transparent conductive film has the advantages of high transparency, good conductivity and good flexibility.

The invention discloses a high-stability MEMS hydrogen sensor and a preparation method thereof. The high-stability MEMS hydrogen sensor is a semiconductor resistance type hydrogen sensor based on a metal oxide gas sensitive coating and sequentially comprises a silicon nitride supporting layer, a Pt / Ti heating electrode, a sensing electrode, a silicon nitride isolating layer and a metal oxide gas sensitive film from bottom to top. The metal oxides are high-purity antimony doped tin dioxide, tetraamino palladium nitrate and tetraammineplatinum nitrate. The preparation method comprises the following steps: mixing high-purity antimony-doped tin dioxide powder, tetraamino palladium nitrate powder and tetraammineplatinum nitrate powder, preparing gas-sensitive slurry from a mixed solution of terpilenol, diethylene glycol butyl ether acetate, ethyl cellulose, dibutyl phthalate and dioctyl phthalate, dispensing the gas-sensitive slurry on a central interdigital electrode area of an MEMS chip, and performing vacuum drying to obtain the gas-sensitive MEMS chip. And performing vacuum standing and slow heating to obtain the sensor. The sensor is low in detection lower limit and stable in resolution ratio after high-humidity aging.

The invention discloses a negative electrode material for improving the cycle performance of a lithium battery, a preparation method of the negative electrode material, a negative electrode plate and a battery, and the preparation method comprises the following steps: S1, growing SnO2 on a carbon nanotube through a hydrothermal synthesis method to form a one-dimensional composite material SnO2 (at) CNT; s2, Zr ions and a silane coupling agent are introduced into the one-dimensional composite material SnO2 (at) CNT, and the modified SnO2 (at) CNT material is obtained. According to the invention, the cycle life of the lithium battery using the stannic oxide negative electrode material is prolonged through material composite modification.

The invention relates to a solar cell piece and a preparation method of the solar cell piece, and belongs to the field of photovoltaic technology, the solar cell piece at least comprises a substrate, a tunneling oxide layer, a tin oxide layer and a doped polycrystalline silicon layer, the tunneling oxide layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the tin oxide layer is arranged on the surface of the substrate along the thickness direction of the substrate. The tin oxide layer is arranged on the surface of the tunneling oxide layer in the thickness direction of the substrate, and the doped polycrystalline silicon layer is arranged on the surface of the tin oxide layer in the thickness direction of the substrate, so that the tin oxide layer is located between the tunneling oxide layer and the doped polycrystalline silicon layer. The ratio F of the number of oxygen atoms to the number of tin atoms in the tin oxide layer is larger than or equal to 1.9 and smaller than or equal to 2.1. The tin oxide layer is arranged between the tunneling oxide layer and the doped polycrystalline silicon layer, and the tin oxide layer has excellent conductivity and light transmission, so that parasitic absorption can be reduced, more light can be absorbed by the substrate, and the photoelectric conversion efficiency of the solar cell is improved.

The application discloses a kind of detection pesticide water amitraz integrated organic photoelectrochemical transistor sensor construction method.The application is integrated on the same fluorine-doped tin oxide conductive glass chip by laser etching technology to have the gate, source, drain three electrodes of organic photoelectrochemical transistor.In order to improve the activity and stability of grating material, the method of encapsulating Pd NPs in Cu-MOF and pyrolyzing is adopted, and Pd NPs / p-Cu-MOF is formed.Pyrolysis Cu-MOF with three-dimensional MOF structure as active carrier can load more Pd NPs, and the redox active copper metal elements contained therein will cause electron transfer between carrier and Pd NPs, so as to adjust the electronic state of metal active site and improve its catalytic performance.Schottky junction is formed between Pd NPs and p-Cu-MOF, which promotes the separation of electrons and holes.Pd NPs / p-Cu-MOF is used as photoactive gate material, and amino amitraz aptamer with carboxyl on the material is used as recognition element, so as to realize the OPECT sensing detection of ICP.

The present application relates to the technical field of target materials, and specifically discloses a tin oxide-based target material, a preparation method therefor, and a use thereof. Raw materials for the preparation of the tin oxide-based target material of the present application comprise, in parts by mass, 91-95 parts of tin oxide, 1.5-3.5 parts of tantalum oxide, 1.5-3.5 parts of zinc oxide, 0.5-2 parts of tungsten oxide, and 0.3-1.5 parts of gadolinium oxide, and further comprise a binder and a plasticizer. The present application further provides a preparation method for the tin oxide-based target material and a use of the tin oxide-based target material. The tin oxide-based target material provided by the present application has high density and extremely low resistivity, wherein the density of the tin oxide-based target material is greater than or equal to 6.5 g / m3, and the resistivity thereof is smaller than or equal to 1×10-2Ω·cm. Therefore, the tin oxide-based target material can be suitable for direct-current (DC) magnetron sputtering coating. In addition, due to the advantages of good light transmittance and low resistivity, the tin oxide-based target material of the present application can further improve battery conversion efficiency and can be applied to photovoltaic heterojunction batteries and perovskite batteries.

The invention discloses a heterogeneous precipitation preparation process of modified tin oxide powder doped with middle-low-melting-point oxides, and relates to the field of powder metallurgy. The preparation method comprises the following steps: coating bismuth oxide on the surface of tin oxide slurry which is prepared by a traditional acidification method and has the D50 particle size of 0.5-3 microns by utilizing a heterogeneous precipitation method, then calcining at 900-1200 DEG C, carrying out liquid-phase sintering on the tin oxide by utilizing the state of a bismuth oxide liquid phase at the temperature, and then cooling, thereby obtaining the bismuth oxide-tin oxide composite material with the D50 particle size of 0.5-3 microns. The modified tin oxide powder doped with the medium-low-melting-point oxides is spheroidic in morphology and concentrated and uniform in particle size distribution. Compared with tin oxide powder prepared through a traditional acidification tin oxide preparation process, the low-medium-melting-point oxide modified tin oxide powder prepared through the process has the advantages of being more concentrated in particle size distribution, better in particle size uniformity and easier to disperse evenly, and a silver tin oxide material good in uniformity and stable in quality can be prepared easily.

The invention relates to a perovskite solar cell, a preparation method and application thereof, and a photovoltaic device. The perovskite solar cell comprises a first electrode, a perovskite light absorption layer, an electron transport layer, an interface modification layer, a buffer layer and a second electrode which are stacked, the buffer layer comprises tin oxide, and the interface modification layer comprises at least one of aluminum oxide and silicon oxide. The interface modification layer of a specific type is arranged between the specific buffer layer comprising tin oxide and the electron transport layer, so that the adhesive force between the buffer layer and the electron transport layer can be effectively improved, and meanwhile, ion migration in the perovskite solar cell can be effectively inhibited; therefore, the photoelectric conversion efficiency and the stability of the perovskite solar cell are effectively improved.

The present invention addresses the problem of providing a tandem solar battery (1) having a simple configuration and exceptional battery performance. A tandem solar battery (1) that solves the aforementioned problem includes a first solar battery cell (CB1) that includes a first light absorption layer (10) containing n-type or p-type crystal silicon, a titanium oxide layer (31) that is disposed on the first light absorption layer (10) and contains amorphous titanium oxide, an intermediate layer (32) that is disposed adjacent to the titanium oxide layer (31) and contains tin oxide or titanium nitride having a higher nitrogen composition than the titanium oxide layer (31), and a second solar battery cell (CT1) disposed on the intermediate layer (32).