1045 results about "Tin oxide" patented technology

Tin oxide films are used as spacers and hardmasks in semiconductor device manufacturing. In one method, tin oxide layer (e.g., spacer footing) needs to be selectively etched in a presence of an exposed silicon-containing layer, such as SiOC, SiON, SiONC, amorphous silicon, SiC, or SiN. In order to reduce damage to the silicon-containing layer the process involves passivating the silicon-containing layer towards a tin oxide etch chemistry, etching the tin oxide, and repeating passivation and etch in an alternating fashion. For example, passivation and etch can be each performed between 2-50 times. In one implementation, passivation is performed by treating the substrate with an oxygen-containing reactant, activated in a plasma, and the tin oxide etching is performed by a chlorine-based chemistry, such as using a mixture of Cl2 and BCl3.

The invention relates to the technical field of crystalline silicon solar cells, and particularly discloses a low parasitic absorption TOPCon solar cell which comprises an N-type silicon substrate, a boron emitter is arranged on the front surface of the N-type silicon substrate, a front passivation layer and an antireflection layer are arranged on the side face of the boron emitter, and a tunneling oxide layer is arranged on the back surface of the N-type silicon substrate. Hydrogenated lightly-doped polycrystalline silicon and hydrogenated heavily-doped polycrystalline silicon are arranged on the side surface of the tunneling oxide layer, and conductive oxide is arranged between the hydrogenated lightly-doped polycrystalline silicon and the hydrogenated heavily-doped polycrystalline silicon. According to the low parasitic absorption TOPCon solar cell provided by the invention, on the basis of a TOPCon cell, the thickened fluorine-doped tin oxide is used as the second conductive oxide layer by utilizing the transparent and conductive characteristics of the fluorine-doped tin oxide. Inward diffusion of phosphorus atoms can be effectively prevented during annealing, and inward diffusion of metal Ag can be limited during sintering. Thus, the thinned outer layer hydrogenated heavily doped Poly-Si is configured through the thickened fluorine-doped tin oxide, so that parasitic absorption is reduced.

The invention discloses a high-performance polyether-ether-ketone plate and a preparation method thereof, and belongs to the technical field of semiconductor manufacturing. The high-performance polyether-ether-ketone plate comprises the following components in parts by weight: 80-90 parts of polyether-ether-ketone, 1-3 parts of carbon nanotubes, 1-3 parts of graphene nanosheets, 2-5 parts of conductive tin oxide micro powder, 3-5 parts of polytetrafluoroethylene micro powder and 0.5-1 part of a silane coupling agent. The PEEK composite material provided by the invention has excellent mechanical, conductive, heat management, corrosion resistance and antistatic properties, and is suitable for severe environments such as high temperature, corrosion and fatigue resistance.

The present application relates to a solar cell and a preparation method therefor, and a photovoltaic assembly, a system and an electric apparatus. The solar cell comprises a first electrode layer, a first hole transport layer, a perovskite light absorption layer and a second electrode layer, which are arranged in a stacked manner, wherein components of the first hole transport layer comprise P-type tin oxide. The solar cell has a relatively high photoelectric conversion efficiency.

The invention relates to a tin immersion production system for electronic components, which comprises a machine table, the top surface of the machine table is provided with a material conveying mechanism, a clamping mechanism, an impurity removal mechanism and a welding aid mechanism, and the clamping mechanism comprises a mounting plate, a mounting seat and two clamping plates which are symmetrically distributed; the impurity removing mechanism comprises a tin slag groove, a support, a first reciprocating pushing mechanism and a scraper blade. According to the technical scheme, the electronic component can be conveyed through the material conveying component, the clamping mechanism is controlled through the mechanical arm to clamp the conveyed electronic component, then the clamped electronic component makes contact with the weld-aid component, and then the mechanical arm is controlled to make the clamped electronic component make contact with tin liquid in the tin bath for tin immersion operation; and after tin immersion is completed, residual tin oxide on the tin liquid is removed through the impurity removal mechanism, the purposes of optimizing the whole tin immersion process and improving the tin immersion efficiency and the tin immersion treatment quality are achieved, multiple electronic components can be clamped through the clamping mechanism for tin immersion, and the working efficiency of tin immersion is further improved.

The invention relates to blue high borosilicate glass and a preparation method thereof, and belongs to the technical field of glass manufacturing, and the blue high borosilicate glass comprises the following raw materials in parts by weight: 50-60 parts of silicon dioxide, 10-15 parts of boron oxide, 2-3 parts of aluminum oxide, 6-8 parts of alkali metal oxide, 3-4 parts of a compound clarifying agent and 1-3 parts of a modified coloring agent. According to the technical scheme, the cobalt blue pigment is coated with mesoporous silica, and the composite material is obtained; combining the composite material with a silane coupling agent to obtain a silanized composite material; combining the silanized composite material with boric acid ester to obtain a modified coloring agent; the prepared modified coloring agent enables the high borosilicate glass to have remarkable blue color and to be stable in color and not prone to volatilization under high-temperature and high-pressure conditions, the added composite clarifying agent is formed by mixing cerium dioxide, sodium sulfate and tin oxide, the clarity of the glass is improved, volatilization of boron is effectively reduced, and the service life of the glass is prolonged. The mechanical property and the stability of the high borosilicate glass are generally improved, and the quality of the glass is improved.

The invention relates to the field of architectural ceramics, and discloses a sapphire effect dry particle, a ceramic tile with a sapphire imitation effect and a preparation method of the ceramic tile. The sapphire effect dry granules comprise blue dry granules and transparent dry granules, wherein the blue dry granules are prepared from the following raw materials: 1.5 to 3.5 parts of superfine tin dioxide, 15 to 19.5 parts of cobalt oxide, 4.5 to 7.5 parts of titanium oxide, 8 to 14 parts of zinc oxide, 32 to 43 parts of calcined aluminum oxide, 8 to 13 parts of quartz, 10 to 16 parts of potassium feldspar and 2.5 to 4.5 parts of boric acid; the transparent dry particles comprise the following raw materials in parts by weight: 8-15 parts of zinc oxide, 5-10 parts of aluminum oxide, 24-28 parts of quartz, 1-2.5 parts of nano silicon nitride and 7-11 parts of cryolite. By mixing the two dry granules, the frit dry granules which have a three-dimensional effect and an ice crack texture and imitate the texture of sapphire crystals can be prepared. The ceramic tile with the sapphire-like effect can be prepared by adopting the dry particles with the sapphire effect.

The invention discloses a preparation method and application of a CuBi2O4 film electrode, and belongs to the field of film materials. The preparation method of the CuBi2O4 film electrode comprises the following steps: mixing an aqueous solution of 0.05 mol / L-0. 2 mol / L copper acetate and an aqueous solution of 0.05 mol / L-0. 2 mol / L sodium acetate to obtain an electrolyte I, and obtaining a Cu2O film on FTO (Fluorine-doped Tin Oxide) by adopting an electrodeposition method; adding a coordination agent, KOH and fused salt KNO3 into a 0.05 mol / L-0. 3 mol / L bismuth nitrate solution or adding water to dilute to obtain a solution II; and pulling and dipping the obtained Cu2O film in the solution II, carrying out annealing treatment, washing with deionized water, and drying to obtain the CuBi2O4 film electrode. According to the preparation method disclosed by the invention, Cu2O with uniform surface and good compactness is obtained by regulating and controlling the concentration ratio of cupric acetate to sodium acetate, and the high-quality CuBi2O4 film electrode is prepared by optimizing the concentrations of the coordination agent, the mineralizing agent and the fused salt on the basis.

The invention relates to the technical field of synthesis and preparation of nano materials, in particular to a method for preparing tin dioxide powder, which comprises the following steps: S1, preparing a 0.1-5 mol / L tin salt solution, adding a compound additive into the tin salt solution, and carrying out ball milling treatment after ultrasonic dispersion to obtain a pretreated tin salt solution; s2, freezing and freezing the pretreated tin salt solution in an ultralow-temperature environment to obtain a frozen sample; s3, transferring the frozen sample into a vacuum freeze dryer for dehydration treatment to obtain solid powder; and S4, carrying out high-temperature calcination on the solid powder to obtain tin dioxide powder. Zero sewage discharge is achieved in the preparation process, the problem of sewage discharge and treatment of traditional liquid-phase powder preparation is solved, meanwhile, the phenomenon of sintering agglomeration accompanied by traditional solid-phase calcination can be avoided, high-quality superfine tin dioxide powder preparation is achieved, the method is simple and safe in process, and industrial large-scale production and preparation are easy to achieve.

The invention belongs to the technical field of photovoltaic coatings, and discloses a photovoltaic coating as well as a preparation method and application thereof. The photovoltaic coating is prepared from the following raw materials: a solvent, an ultraviolet light absorber, a wetting agent, an antistatic agent, modified hydrophilic silicon dioxide, nano magnesium fluoride and nano tin dioxide, the modified hydrophilic silicon dioxide is hydrophilic silicon dioxide modified by ethylenediamine and glacial acetic acid. A coating formed by the photovoltaic coating is high in adhesive force and resistant to aging, and the light transmittance, the self-cleaning property and the antistatic property of photovoltaic glass can be obviously improved.

The invention relates to the technical field of ceramics, in particular to celadon glaze water, ceramics and a preparation method thereof, and the preparation method comprises the following steps: preparing the celadon glaze water: preparing 10-15 parts of cooked talc, 5-8 parts of an additive modifier, 4-7 parts of ball clay, 4-7 parts of modified dolomite, 2-4 parts of Longquan porcelain clay, 2-4 parts of zinc oxide and 2-4 parts of tin oxide; the ceramic of the celadon glaze water is prepared by the following steps: blending potassium feldspar, quartz, kaolin and bentonite, and carrying out wet ball milling to obtain a ball-milled material; the preparation method comprises the following steps: by taking calcined talc, ball clay, Longquan porcelain clay, zinc oxide and tin oxide as matrix materials, adding a modifier and modified dolomite as functional aids, and blending and coordinating the matrix materials and the functional aids, obtaining the celadon glaze water with excellent surface wear resistance and impact strength.

The invention provides a perovskite solar cell and a preparation method thereof, the perovskite solar cell comprises a substrate, a conductive anode, a hole transport layer, a perovskite light absorption layer, an electron tunneling protection layer, a hole barrier layer and a conductive cathode which are stacked in sequence, and the material of the electron tunneling protection layer comprises aluminum oxide and / or molybdenum oxide; the hole blocking layer is made of tin oxide and / or IZO. According to the invention, the electron tunneling protection layer is arranged between the perovskite light absorption layer and the hole blocking layer, so that the damage to perovskite in the process of depositing the buffer layer of the hole blocking layer is blocked, and the stability of the cell is greatly improved; and tin oxide and / or IZO can be directly deposited without using C60, so that the manufacturing cost is greatly reduced, and a device with higher stability is obtained.

The invention discloses a thick-film electric heating element and a preparation method, and belongs to the technical field of electric heating materials, the thick-film electric heating element comprises a base material, and a glass insulating layer, a conductor layer, a heating layer and a protective layer which sequentially cover the surface of the base material; the glass insulating layer and the protective layer are both obtained by sintering dielectric paste, and the dielectric paste comprises the following components in percentage by mass: 70-80% of a glass phase and 20-30% of an organic carrier; the conductor layer is obtained by sintering silver paste; the heating layer is obtained by sintering resistance paste, and the resistance paste comprises the following components in percentage by mass: 20-30% of silver powder, 15-40% of tin antimony oxide, 10-30% of glass phase and 20-40% of organic carrier; the thickness of the glass insulating layer is 80-100 microns, the thickness of the conductor layer is 8-12 microns, the thickness of the heating layer is 8-12 microns, and the thickness of the protective layer is 85-110 microns. The thick-film electric heating element has a good application prospect in the fields of household appliances, industrial heating and the like.

The invention discloses high-strength high-temperature-resistant fireproof industrial glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The industrial glass is prepared from the following raw materials: silicon dioxide, boric oxide, aluminum oxide, sodium oxide, potassium oxide, niobium phosphate, a composite reinforcing component and a clarifying agent, the composite reinforcing component is prepared from hafnium oxide, gadolinium oxide and zinc oxide; the clarifying agent is obtained by mixing cerium dioxide and tin oxide. The preparation method of the industrial glass comprises the following steps: preparing functional components, melting glass, forming a glass substrate, and preparing the industrial glass. The prepared industrial glass is high in strength, good in high-temperature stability and excellent in fireproof performance.

The transparent conducting film comprises a base material layer, a first resin layer, a base layer and a composite conducting layer which are sequentially arranged in a stacked mode, and the composite conducting layer comprises a first ITO conducting layer and a second ITO conducting layer arranged on the face, away from the base layer, of the first ITO conducting layer. The mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the first ITO conducting layer is 90: 10, and the mass ratio of indium oxide to tin oxide in the raw material indium tin oxide of the second ITO conducting layer is 93: 7; the first ITO conducting layer and the second ITO conducting layer are both prepared through a magnetron sputtering process, the bombardment gas during magnetron sputtering is krypton, and the direct-current sputtering voltage is 350-400 v. The transparent conductive film provided by the invention has good conductivity and light transmission, and is low in cost.

The invention provides a method and equipment for detecting ion migration of a perovskite solar cell, and relates to the technical field of perovskite solar cells, and the method comprises the steps: obtaining a fluorine-doped tin oxide coating glass substrate, and carrying out the spin coating of a SnO2 colloidal solution on the glass substrate, so as to obtain an electron transport layer; preparing perovskite solutions of different components according to a preset precursor solution formula, spin-coating the electron transport layer with the perovskite solutions, and performing annealing treatment to obtain perovskite thin films of different components; coating a Spiro-OMeTAD solution on the perovskite thin film so as to obtain a hole transport layer; depositing a gold electrode on the hole transport layer to obtain a solar cell device; different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the relation between the interface ion cumulant and the load is evaluated. The problems of unstable performance, current and voltage lagging and the like caused by ion migration of the existing titanium ore solar cell under the actual working condition are solved.

The present invention belongs to the technical field of battery negative electrode materials, and specifically relates to a tin oxide-based composite negative electrode material and its preparation method and use. The in-situ synthesis method of the present invention can enhance the bonding force between SnO2 particles, porous carbon skeletons, and carbon nanotubes, making them a firmly bonded whole. The composite negative electrode material can withstand the stress generated by the volume change of tin oxide, constrain and buffer the volume change of tin oxide, reduce the volume expansion multiple of tin oxide after cyclic charge and discharge, and further prevent the pulverization of the composite negative electrode material; at the same time, it can also improve the conductivity of the composite negative electrode material and improve the electrochemical performance of the negative electrode material.

The invention relates to the field of solar cells, in particular to a preparation method of an electron transport layer and a perovskite solar cell, and the preparation method of the electron transport layer comprises the following steps: uniformly mixing stannous chloride dehydrate, an organic ligand / heterogeneous growth connecting agent and a hydrolysis rate control agent in deionized water to obtain a stannic oxide precursor solution; and taking conductive glass as a substrate to be soaked in the tin dioxide precursor solution, performing in-situ growth in a closed environment with the temperature lower than the water evaporation temperature, and then performing ultrasonic cleaning and annealing to obtain the electron transport layer. According to the in-situ chemical growth regulation and control strategy provided by the invention, the bulk phase self-doping defect control of the tin dioxide n-type thin film, the controllable regulation of the energy band and the optimization of the conductivity and the carrier extraction behavior are realized, and the strategy can be used for preparing a series of tin dioxide electron transport layers to adapt to a preparation scheme and application of a perovskite active layer with any component. And the minimization of energy loss and the optimization of interface non-radiative recombination and carrier transport behavior are realized.

The invention belongs to the field of optoelectronic materials, and provides a dielectric / metal / dielectric multilayer transparent electrode material which sequentially comprises a substrate, a dielectric layer 2, a metal layer and a dielectric layer 1, the material of the dielectric layer 2 comprises metal oxide doped zinc oxide a; the material of the dielectric layer 1 comprises metal oxide doped zinc oxide b; furthermore, the metal oxide doped zinc oxide a and the metal oxide doped zinc oxide b are respectively and independently selected from one or more of aluminum oxide doped zinc oxide and tin oxide doped zinc oxide. Correspondingly, the invention also provides a preparation method of the dielectric / metal / dielectric multilayer transparent electrode material. Compared with a conventional dielectric / metal / dielectric multilayer transparent electrode material, the dielectric / metal / dielectric multilayer transparent electrode material disclosed by the invention is obviously more stable in photoelectric property, and the sheet resistance stability of the dielectric / metal / dielectric multilayer transparent electrode material is obviously improved especially in a high-temperature and high-humidity environment.

The invention relates to the technical field of electronic glass fiber materials, and particularly discloses a corrosion-resistant low-dielectric glass fiber and a preparation process thereof. A preparation process of corrosion-resistant low-dielectric glass fibers comprises the following steps: S1, uniformly mixing glass fiber raw materials, melting, clarifying, homogenizing, cooling, and carrying out wiredrawing treatment to obtain glass fiber precursors; and S2, sequentially carrying out plasma treatment and impregnating compound treatment on the glass fiber precursor, drying and curing to obtain the corrosion-resistant low-dielectric glass fiber, silicon dioxide, aluminum oxide, magnesium oxide, boric oxide, calcium fluoride, tin oxide, sodium oxide, potassium oxide and rare earth oxide are used as glass fiber raw materials, and the rare earth oxide is a mixture of gadolinium oxide, cerium oxide and samarium oxide. The obtained glass fiber has excellent low dielectric property and corrosion resistance, and has a wide market prospect.

The invention relates to the technical field of glass, in particular to an alkali-free aluminoborosilicate glass composite clarifying agent and a clarifying method thereof. The alkali-free aluminoborosilicate glass composite clarifying agent is prepared from the following raw materials in percentage by mass on the basis of the total mass of alkali-free aluminoborosilicate glass: 0.4 to 5.5 percent of halogen alkaline earth metal salt, 0.03 to 0.4 percent of lanthanum oxide, 0.01 to 0.4 percent of tin dioxide and 0.01 to 0.3 percent of cerium dioxide. The alkali-free aluminoborosilicate glass composite clarifying agent is applied to alkali-free aluminoborosilicate glass, and the problems that the alkali-free aluminoborosilicate glass is poor in clarifying effect and has many bubble defects are solved; the corrosion of high-temperature molten glass to refractory materials at parts such as a tank furnace and the like is reduced, so that the number of stone defects of the refractory materials in the glass is reduced, and the service life of the refractory materials of the furnace is prolonged.

The invention belongs to the technical field of water photoelectrolysis material preparation, and relates to a non-metallic element doped fullerene composite bismuth vanadate water photoelectrolysis method which comprises the following steps: s1, cleaning a conductive substrate; s2, the fullerene powder is subjected to non-metallic element doping treatment through a chemical vapor deposition method; s3, stirring the modified fullerene treated in the step s2, a Bi source and a V source to prepare catalyst slurry; s4, the conductive surface of a conductive base material is placed in the catalyst slurry downwards, and hydrothermal in-situ growth is carried out to prepare a photoelectrocatalysis film; and s5, naturally cooling to room temperature, taking out the conductive substrate, and heating and calcining to obtain the photoelectrolysis water electrode, according to the preparation method, fullerene is doped with different metal elements by adopting a chemical vapor deposition method, and a uniform, compact and firm catalyst film is formed on FTO (Fluorine-doped Tin Oxide) in a hydrothermal in-situ growth manner, so that a more stable and high-activity photoelectrolysis water electrode is obtained; the preparation method is simple, the cost is low, and large-scale electrode preparation can be realized.

The invention discloses a silver-based tin oxide electric contact material and a preparation method thereof, and relates to the technical field of electric contact materials. When the silver-based tin oxide electric contact material is prepared, firstly, a high-temperature solid-phase method is used for doping lithium and cerium to prepare doped tin oxide powder; stannic chloride and copper nitrate are prepared into a fiber membrane through electrostatic spinning, meanwhile, titanium dioxide is grown in situ through nano spraying, and doped stannic oxide fibers are prepared after calcination; the doped tin oxide powder, doped tin oxide fibers and silver powder are subjected to high-energy ball milling and powder mixing and then annealed, and silver-based tin oxide composite powder is obtained; the silver-based tin oxide composite powder is subjected to pre-pressing forming and then subjected to vacuum discharge plasma sintering, and the silver-based tin oxide electric contact material is prepared. The prepared silver-based tin oxide electric contact material has the advantages of being low in resistivity, high in fusion welding resistance, good in arc erosion resistance and easy to machine and shape.

The invention discloses a stannic oxide-based ammonia gas sensor as well as a preparation method and application thereof, relates to the technical field of gas sensors, and solves the problems of high detection lower limit, poor gas selectivity and low sensitivity of a traditional semiconductor ammonia gas sensor. A sensitive material based on oxygen vacancy regulation and control SnO2 / ZIF-67 is prepared on the surface of an interdigital gold electrode by adopting a chemical vapor deposition method, a planar electrode, an aluminum oxide ceramic substrate, a heater and a Pt wire are welded and packaged according to a general indirectly-heated gas sensitive element, and the SnO2 / ZIF-67 semiconductor ammonia gas sensor is prepared. The lower detection limit of the SnO2 / ZIF-67 semiconductor ammonia gas sensor is 1 ppm; meanwhile, the NH3 selectivity and sensitivity of the sensor are improved through the synergistic effect of SnO2 and ZIF-67, and the sensor can be used for detecting ammonia gas leakage and can be applied to judging the safety of ammonia gas in chemical production operation, environmental gas detection and other applications.

The invention belongs to the field of gas sensors, and discloses a sensing-transfer-transmission separated Ni-MOF / SnO2 high-selectivity hydrogen sulfide room temperature sensor and a preparation method thereof. The sensor comprises an insulating substrate, a gold interdigital electrode, a SnO2 electron transport layer and a Ni-MOF sensing layer from bottom to top, wherein the SnO2 electron transport layer is prepared on the gold interdigital electrode through an atomic layer deposition process, the Ni-MOF sensing layer is prepared on the SnO2 layer in an in-situ growth mode, and a heterojunction is formed between the SnO2 layer and the Ni-MOF layer. The sensor combines the conductivity advantage of tin oxide, the specificity sensitivity advantage of the MOF layer and the transduction advantage of the Ni-MOF / SnO2 heterojunction, the defect of intrinsic high resistance when Ni-MOF is used as the sensor is overcome, room-temperature high-selectivity, low-detection-lower-limit and high-response detection of hydrogen sulfide is achieved, the humidity stability of the sensor is greatly improved, and the sensor has a wide application prospect. The method has a wide application prospect in the aspect of gas detection.

The invention relates to a preparation method of an oxygen vacancy-rich bismuth molybdate / bismuth vanadate composite photo-anode and a product and application thereof, and belongs to the technical field of photoelectrocatalysis. The invention discloses a preparation method of an oxygen vacancy-rich bismuth molybdate / bismuth vanadate (Bi2Mo2O9 / BiVO4) composite photo-anode, which mainly comprises the following steps: immersing a fluorine ion-doped tin dioxide (FTO) conductive glass substrate into a Bi < 3 + > ion solution and an I <-> ion solution to form a bismuth oxyiodide (BiOI) film, dropwise adding a dimethyl sulfoxide solution of vanadyl acetylacetonate (VO (acac) 2), and putting into a muffle furnace to prepare the BiVO4 photo-anode. And then vertically immersing into a Bi < 3 + > ion solution and a Mo < 6 + > ion solution, and carrying out annealing treatment in an argon atmosphere to prepare the Bi2Mo2O9 / BiVO4 composite photoanode rich in oxygen vacancies. The Bi2Mo2O9 / BiVO4 material rich in oxygen vacancies is a metal oxide composite photo-anode, the photoelectrocatalysis efficiency can be improved, and hydrogen peroxide (H2O2) can be continuously generated in natural seawater through photoelectrocatalytic oxidation of water for a long time.

A solar cell and a preparation method thereof belong to the field of photovoltaic technology, the solar cell at least comprises a substrate, a tunneling oxide layer, a tin oxide layer and a doped polycrystalline silicon layer, along the thickness direction of the substrate, the tunneling oxide layer is arranged on the surface of the substrate, the tin oxide layer is arranged on the surface of the tunneling oxide layer, and the doped polycrystalline silicon layer is arranged on the surface of the substrate. The doped polycrystalline silicon layer is arranged on the surface of the tin oxide layer, so that the tin oxide layer is located between the tunneling oxide layer and the doped polycrystalline silicon layer. The phosphorus doping concentration alpha of the tunneling oxide layer satisfies 1 * 10 < 13 > cm <-3 > < = alpha < = 1 * 10 < 16 > cm <-3 >, the phosphorus doping concentration beta of the tin oxide layer satisfies 1 * 10 < 15 > cm <-3 > < = beta < = 1 * 10 < 20 > cm <-3 >, and the phosphorus doping concentration gamma of the doped polycrystalline silicon layer satisfies 1 * 10 < 19 > cm <-3 > < = gamma < = 1 * 10 < 21 > cm <-3 >. The tin oxide layer is arranged between the tunneling oxide layer and the doped polycrystalline silicon layer, the tin oxide layer has excellent conductivity and light transmission, parasitic absorption is reduced, more light is absorbed by the substrate, and the photoelectric conversion efficiency of the solar cell is improved.

The present invention discloses a novel gas-sensitive material, specifically a method for preparing a core-shell nanofiber gas-sensitive material based on a platinum-doped cobalt oxide / tin oxide heterostructure. The present invention utilizes a cobalt source, a tin source, a platinum source, and a polymer as raw materials, and produces a nanoscale platinum-doped cobalt oxide / tin oxide gas-sensitive material with high sensitivity and rapid response to hydrogen sulfide gas via coaxial electrospinning. This gas-sensitive material exhibits excellent gas-sensing properties for H2S gas at room temperature, with a short response time, enabling rapid detection of low-concentration H2S gas, a short recovery time, and excellent cyclic stability. Therefore, the gas-sensitive material of the present invention possesses excellent sensitivity and stability, and has broad application prospects, including applications in environmental monitoring, industrial safety, and gas sensors.

The embodiment of the invention provides a connecting layer, a composite layer, a solar cell and a laminated cell. The connecting layer comprises a first transparent conductive layer and a hole transport layer which are stacked; and the hole transport layer is an alloy film containing Ga, Al, In, Sn, O and N elements. Component regulation and control are carried out on the hole transport layer, P-type doping is realized by utilizing a co-doping strategy, the hole concentration of a traditional tin oxide material layer is improved, long wavelength absorption is not remarkably increased, and in addition, multi-component doping can also avoid that a single component is easy to separate out and split phases.

An electrophotographic member having a base layer and a surface layer, wherein the surface layer comprises a binder resin; and a plurality of particles comprising a conductive tin oxide, in the binder resin, a content ratio of the particles comprising a conductive tin oxide, in the surface layer, is 2.0 to 10.0 vol %, and a value of an L function denoting a relationship of a distribution of the particles comprising a conductive tin oxide, as observed from a surface of the surface layer, is always positive in a range of 300 nm to 1 μm of a distance from barycentric coordinates of the particles.