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Method for preparing nano-doped tin oxide sol

A tin oxide sol, nanotechnology, applied to tin oxide, conductive layers on insulating carriers, electrical components, etc., can solve problems such as toxicity and use, and achieve the effects of high degree of crystallization, good stability, and environmental protection in the preparation process.

Active Publication Date: 2009-11-18
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Fluorine-doped SnO 2 The preparation of thin films is mainly based on methods such as spray coating, high-temperature thermal decomposition, and CVD. For FTO thin films, inorganic salt sol-gel methods are rarely used to prepare them. A.V.Moholkar (Materials Letter, 2007, 61, 3030-3036 ) and others synthesized fluorine-doped SnO by spray pyrolysis 2 Conductive thin film, sheet resistance reaches 5.1Ω / □; but toxic organic solvents are used

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Embodiment 1

[0021] Example 1: Fluorine-doped SnO 2 Solution preparation: 0.6mol / L of Sn(NO 3 ) 4 Add NaOH solution to 125ml of the solution under stirring until the pH is 7. After standing and aging, the product is washed to obtain a precipitate, and then deionized water is added to the obtained precipitate, and then oxalic acid is added dropwise at a low temperature to degumming, and the temperature is gradually raised and refluxed for 3 hours. The product is added with 0.0075mol of NH 4 F, the last 24h under water heating at 140°C. Product washing and ultrasonic dispersion to obtain stable fluorine-doped SnO 2 Sol. The amount of oxalic acid added is Sn(NO 3 ) 4 60% of the dosage.

Embodiment 2

[0022] Example 2: Antimony-doped SnO 2 Solution preparation: 0.5mol / L SnCl 4 Add 0.002mol SbCl to 125mL of the solution 3, adding NH with stirring 3 ·H 2 O, until the pH is 8, after static aging, wash the product to obtain a precipitate, then add deionized water to the obtained precipitate, then drop hydrogen peroxide gel at low temperature, gradually raise the temperature, reflux for 4 hours, and finally heat at 160°C for 48 hours. Product washing and ultrasonic dispersion to obtain stable antimony-doped SnO 2 Sol. The amount of hydrogen peroxide added is SnCl 4 120% of the amount used.

Embodiment 3

[0023] Example 3: SnO doped with antimony and fluorine 2 Solution preparation: 0.4mol / L of Sn(SO 4 ) 2 Add 0.001molSbCl to 125mL of the solution 3 , add NaOH under stirring until the pH is 9, wash the product after standing and aging to obtain a precipitate, then add deionized water to the obtained precipitate, then drop hydrogen peroxide gel at low temperature, gradually heat up, reflux for 6 hours, and add 0.005 mol of NH 4 F, the last water heating at 200°C for 144h. Product washing and ultrasonic dispersion to obtain stable antimony and fluorine-doped SnO 2 Sol. The amount of hydrogen peroxide added is Sn(SO 4 ) 2 140% of usage.

[0024] The fluorine-doped SnO in this embodiment 1 2 The detection result of solution product through transmission electron microscope (TEM) and X-ray diffractometer (XRD) is referring to in the accompanying drawing figure 1 and figure 2 .

[0025] figure 1 shows that nanofluorine-doped SnO 2 It can be seen that the particle size d...

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Abstract

The invention relates to a method for preparing nano-doped tin oxide sol, belonging to the technical field of semiconductor nano film preparation process. The method provided by the invention mainly uses a sol-gel method to prepare nano-doped SnO2 sol on compatible reaction condition via hydrothermal processing. In the method, tin salt is taken as main raw material, villaumite and antimony salt or two parts of antimony or two parts of villaumite in appropriate content are added as doping agent to obtain doped SnO2 sol. High temperature calcination is unnecessary in the synthesized process, and nano-doped SnO2 sol can be obtained with even grains and fine dispersivity. Spray finishing, spin coating, and dipping and drawing method can be carried out on the obtained sol to prepare nano-doped SnO2 film. The film can be applied into various fields, such as low emissivity glass, display equipment, gas sensor, transparency electrode of solar battery and the like.

Description

technical field [0001] The invention relates to a preparation method of nano-doped tin oxide sol, which belongs to the technical field of semiconductor nano-film material preparation technology. Background technique [0002] Tin oxide (SnO 2 ) is a wide bandgap n-type semiconductor material (pure SnO 2 The band gap is 3.57ev), and it has the advantages of good chemical stability and optical anisotropy. Due to SnO 2 Nanomaterials have the advantages of small particle size and large specific surface area, so they have become a research hotspot in the fields of gas-sensitive materials, lithium-ion battery materials, and optoelectronic materials. SnO 2 The preparation methods of nanoparticles include precipitation method, sol-gel method, microemulsion method, hydrolysis method, spray pyrolysis method, hydrothermal method and so on. The sol-gel method has a low process temperature, is easy to prepare thin films, and is easy to uniformly and quantitatively incorporate some tr...

Claims

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Application Information

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IPC IPC(8): C01G19/02C03C17/22H01L31/0224G01N27/12H01B5/14
Inventor 施利毅袁帅吴珊珊方建慧赵尹
Owner SHANGHAI UNIV
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