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Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles

A technology of dilute magnetic semiconductors and nanoparticles, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc.

Inactive Publication Date: 2014-02-12
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] There are few reports on Co-doped CdS dilute magnetic semiconductor nanoparticles. The preparation method and ferromagnetic research of Co-doped CdS dilute magnetic semiconductor nanoparticles are limited to wurtzite structure or sphalerite structure. There is no report on the high temperature and high pressure preparation method of Co doped CdS dilute magnetic semiconductor material

Method used

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  • Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles
  • Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles
  • Preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1 The high-temperature and high-pressure treatment of Co-doped CdS with a doping concentration of 0.1441% atomic ratio

[0019] Co-doped CdS nanopowders with zinc blende structure were pressed into flakes with a diameter of 3 mm and a thickness of 1 mm. Put the pressed flakes into the reaction chamber of the six-sided top press. Adjust the pressure and temperature values ​​so that the temperature reaches 600°C, the pressure reaches 5GPa, and the holding time reaches 30 minutes. After 30 minutes, the sample is cooled to room temperature and the pressure is released to obtain Co-doped CdS dilute magnetic semiconductor nanoparticles with a rock salt ore structure. composed of bulk materials.

[0020] Adjust the pressure, temperature, and holding time to 6GPa, 700°C, 40 minutes or 7GPa, 800°C, 50 minutes, respectively, and obtain two groups of bulk materials composed of Co-doped CdS dilute magnetic semiconductor nanoparticles with a rock-salt structure.

[0021] A...

Embodiment 2

[0022] Example 2 The high-temperature and high-pressure treatment of Co-doped CdS with a doping concentration of 0.1365% atomic ratio

[0023] Co-doped CdS nanopowders with zinc blende structure were pressed into flakes with a diameter of 3 mm and a thickness of 1 mm. Put the pressed flakes into the reaction chamber of the six-sided top press. Adjust the pressure and temperature values ​​so that the temperature reaches 600°C, the pressure reaches 5GPa, and the pressure holding time reaches 30 minutes. After 30 minutes, the sample is cooled to room temperature and the pressure is released. A bulk material composed of Co-doped CdS dilute magnetic semiconductor nanoparticles with a rock-salt structure was obtained.

[0024] The pressure, temperature and pressure holding time were adjusted to 6GPa, 700°C, 40 minutes and 7GPa, 800°C, 50 minutes, respectively, and two groups of bulk materials composed of Co-doped CdS dilute magnetic semiconductor nanoparticles with rock salt ore st...

Embodiment 3

[0026] Example 3 High-temperature and high-pressure treatment of Co-doped CdS with a doping concentration of 0.1466% atomic ratio

[0027] Co-doped CdS nanopowders with zinc blende structure were pressed into flakes with a diameter of 3 mm and a thickness of 1 mm. Put the pressed flakes into the reaction chamber of the six-sided top press. Adjust the pressure and temperature values ​​so that the temperature reaches 600°C, the pressure reaches 5GPa, and the pressure holding time reaches 30 minutes. After 30 minutes, the sample is cooled to room temperature and the pressure is released. A bulk material composed of Co-doped CdS dilute magnetic semiconductor nanoparticles with a rock-salt structure was obtained.

[0028] The pressure, temperature and pressure holding time were adjusted to 6GPa, 700°C, 40 minutes and 7GPa, 800°C, 50 minutes, respectively, and two groups of bulk materials composed of Co-doped CdS dilute magnetic semiconductor nanoparticles with rock salt ore struct...

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Abstract

The invention relates to a preparation method of rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles, and belongs to the technical field of preparation of diluted magnetic semiconductor nano-particle materials. The preparation method comprises the following steps: taking sphalerite structure Co-doped CdS diluted magnetic semiconductor nanoparticles as initial raw materials, keeping the pressure for 30-50min under the conditions that the pressure is 5.0-7.0GPa and the temperature is 600-800 DEG C, and performing cooling and pressure relief to obtain the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles. According to the preparation method disclosed by the invention, the high-temperature and high-pressure method is utilized to synthesize the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles; the forbidden bandwidth of a rock-salt mine CdS diluted magnetic semiconductor is 1.5-1.7eV; furthermore, the rock-salt mine CdS diluted magnetic semiconductor is an indirect band gap semiconductor and formed by combining the rock-salt mine structure with the sphalerite structure, and the band gap can change continuously within the whole spectral region from near ultraviolet light to far infrared light; and simultaneously, the rock-salt mine structure Co-doped CdS diluted magnetic semiconductor nanoparticles have room temperature ferromagnetism and thus become ideal materials for various optoelectronic and magneto-optical devices.

Description

Technical field: [0001] The invention belongs to the technical field of preparation of dilute magnetic semiconductor nanoparticle materials, and relates to a method for synthesizing Co-doped CdS dilute magnetic semiconductor nanoparticle by using a method under extreme conditions such as high temperature and high pressure. Background technique: [0002] The high temperature and high pressure synthesis method refers to the method of synthesizing materials with high temperature and high pressure equipment such as a six-sided top press. This method provides pressure parameters other than the preparation temperature and element ratio that traditional preparation materials focus on, which plays a very positive role in the preparation and selection of materials. In the process of material preparation, the temperature and pressure of preparation are two very important process parameters, and they play a very important role in the preparation process. Temperature determines whether...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G11/02B82Y30/00B82Y40/00
Inventor 张明喆赵瑞姚彬彬邱明泽
Owner JILIN UNIV
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