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Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film

A technology of magnetic semiconductor and titanium nitride, which is applied in the field of preparation of chromium-doped titanium nitride magnetic semiconductor polycrystalline thin films, can solve the problem of no Cr-doped polycrystalline TiN thin films, etc. Choose Simple Effects

Inactive Publication Date: 2011-11-16
TIANJIN UNIV
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Problems solved by technology

But so far there is no report on the preparation of Cr-doped polycrystalline TiN thin films by sputtering.

Method used

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  • Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film
  • Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film
  • Preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film

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Embodiment Construction

[0025] According to the structure and property analysis that we carry out to the sample prepared in the present invention, the best implementation mode of preparing Cr-doped polycrystalline TiN thin film to target reactive sputtering method will be described in detail below:

[0026] 1) The DPS-I type ultra-high vacuum facing target magnetron sputtering coating machine produced by the Shenyang Scientific Instrument Research and Development Center of the Chinese Academy of Sciences is adopted. A pair of Ti targets with a purity of 99.99% are installed on the facing target heads, and one end is used as the magnetic force line. The N pole and the other end is the S pole; the thickness of the target is 5mm, and the diameter is 100mm; evenly place Cr sheets on the surface of the Ti target (the area of ​​the Cr sheet is 9mm 2 ), the number of Cr sheets is 16, and the content of Cr in the sample is 14%; the distance between the two targets is 100mm, and the distance between the axis o...

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Abstract

The invention relates to a preparation method of chromium-doped titanium nitride magnetic semiconductor polycrystal film. An ultrahigh vacuum facing target magnetron sputtering coating machine is adopted, a pair of Ti targets of which the purity is 99.99% is installed on an opposite target head, and a Cr sheet is put on the surface of the Ti target; facing target magnetron sputtering equipment isstarted to successively start a first-stage mechanical pump and a second-stage molecular pump for vacuumizing until the back vacuum degree of a sputtering chamber is 2*10-4 Pa; mixed gas of Ar and N2is led into the vacuum chamber to keep the vacuum degree to 1 Pa; a sputtering power supply is started to apply 0.3A of current and about 500V of DC voltage on a pair of Ti targets to cause sputtering current and voltage to be stable; after sputtering, the sputtering gas Ar and N2 are stopped to be led in, a gate valve is totally opened to continue vacuumizing, and the vacuum system is closed; the vacuum chamber is opened to take out the sample. Compared with Cr-doped TiN films prepared with other methods, the film prepared with the invention has room temperature ferromagnetism; the adopted method is simple and practical and is favorable for popularizing in industrial production.

Description

technical field [0001] The invention relates to a method for preparing a chromium-doped titanium nitride magnetic semiconductor polycrystalline film, more specifically, a method for preparing a film with dilute magnetic semiconductor properties. Background technique [0002] In recent years, spintronic materials have attracted much attention due to their great application prospects in magnetic information storage and reading. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to obtain high spin-polarized current is still one of the hot issues in the field of spintronics. The methods to obtain high spin injection mainly include selecting electrode materials with high spin polarizability and preparing dilute magnetic semiconductor materials. [0003] Diluted magnetic semiconductor refers to a new type of semiconductor material formed by partially replacing non-magnetic elements in semiconductors with magnetic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 米文博叶天宇白海力
Owner TIANJIN UNIV
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