9 results about "Spin injection" patented technology

This invention relates to a graphene spin device, its construction method, and a method for measuring nonlocal signals. The construction method of the graphene spin device includes the step of setting electrodes on the graphene surface; wherein, the electrodes are set by magnetron sputtering, using a direct current, and the magnetron sputtering power is 200±10W. This invention creates defects at the contact point between the graphene and the electrodes through magnetron sputtering under specific conditions, forming serrated graphene edges. Then, it utilizes the unique magnetism of graphene to construct a spin device. This spin device has high spin polarization and long spin transport distance. More importantly, this spin device relies solely on the magnetism of the graphene itself for spin injection and spin detection, providing a new approach for the development of graphene spin devices. It can be used for nonlocal measurements at room temperature, has low requirements for experimental environmental conditions, and is beneficial for exploring some nontrivial electrical mechanisms.

The invention discloses a vertical magnetic anisotropy GaN-based spin polarized light emitting diode and a preparation method thereof, and the core of the preparation method is as follows: firstly, converting 1-3 layers of graphene into a circular ring shape on n-GaN through dry transfer and laser direct writing; and secondly, in an ultrahigh vacuum environment, continuously and sequentially sputtering and depositing an MgO tunneling layer, a single-layer CoFeB ferromagnetic layer with vertical magnetic anisotropy and an ITO transparent conductive layer in the same sputtering cavity without breaking vacuum. According to the invention, an inverted structure is utilized to enhance heat dissipation and optimize a spin injection interface, and polarized light observation easy to observe is realized. Meanwhile, graphene is used for blocking the defect of MgO, conductance mismatch is solved, spin injection efficiency is enhanced, zero-field perpendicular magnetic anisotropy is achieved through single-layer CoFeB, ITO serves as a conducting layer and also serves as a light window, a full-vacuum magnetron sputtering process is combined to guarantee atomic-scale interface cleanness, and finally the device obtains high-spin-polarization polarized light at the room temperature under the zero external magnetic field; and meanwhile, the spin injection efficiency is high, the spin service life is long, the operation is stable under high current density, the process is simplified, the cost is low, and the observation is easy.

Disclosed is a single-photon source emitting light with controllable circular polarization direction. A pillar structure above a semiconductor substrate includes a semiconductor single-quantum-dot structure. A spin injection layer is arranged above the pillar structure. A pulsed voltage is applied between the spin injection layer and the semiconductor substrate to inject a spin-polarized single-carrier from the spin injection layer into the semiconductor single-quantum-dot structure. In response to the injected single-carrier, a single-quantum-dot emits a single-photon with a circular polarization direction corresponding to the spin direction of the injected single-carrier. The polarization controllable single-photon source allows to use magnetic or electrical means to modulate the circular polarization direction of single-photon. The modulation speed by electrical mean can reach up to GHz range.

An injection monitoring module is removably mounted on the proximal end of an injection pen comprising a pen body, a dose setting wheel located on the proximal end, and an injection initiator. The dose setting wheel rotates about the central longitudinal axis of the pen during dose setting. The injection monitoring module comprises a hollow body coaxially mounted on and co-rotatingly engaged with the dose setting wheel. The body comprises a longitudinal bore having a proximal end, a distal end, and a central longitudinal axis; one or more magnets located on or within the body. The injection monitoring system comprises at least one magnetic field sensor that moves along the central axis within the bore from a first monitoring position to a second monitoring position. The injection monitoring module further comprises a rotational stop for preventing rotational movement of the monitoring system about the central axis during dose selection.

This invention belongs to the technical fields of optoelectronic devices, spin optoelectronics, and organic-inorganic hybrid semiconductor materials. Specifically, it relates to a circularly polarized electroluminescent device based on a one-dimensional / three-dimensional perovskite heterostructure and its implementation method. The circularly polarized electroluminescent device includes a substrate, a bottom electrode layer, an electron transport layer, a light-emitting layer, a hole transport layer, and a top electrode stacked sequentially. The light-emitting layer is a one-dimensional / three-dimensional perovskite heterostructure formed in situ by chiral one-dimensional perovskite and three-dimensional perovskite. This invention constructs a one-dimensional / three-dimensional perovskite heterostructure within the light-emitting layer, utilizing the chiral properties of the one-dimensional perovskite to induce lattice distortion in adjacent three-dimensional perovskite at the heterostructure interface. This results in intrinsic structural chirality and excited-state chirality in the three-dimensional perovskite light-emitting region, achieving stable circularly polarized electroluminescence without the need for an external magnetic field or spin injection, thus enabling the device to simultaneously achieve high luminous efficiency and good stability.

The application discloses a spin light emitting diode based on a mixed hole transport layer and a preparation method thereof. The spin light emitting diode based on the mixed hole transport layer comprises a substrate layer, a first electrode layer, a hole injection layer, a mixed hole transport layer, a chiral perovskite active layer (or a spin injection layer and a quantum dot layer), an electron transport layer and a second electrode layer which are sequentially arranged. The mixed hole transport layer comprises at least two different materials and has the characteristics of the at least two different materials, so that the performance of the device in all aspects can be considered more than that of a single material. The different materials in the mixed hole transport layer jointly form a gradient HOMO energy level, reduce a hole injection barrier, increase a carrier injection channel, so that the device has higher photoelectric performance, and more holes reach the chiral perovskite material to realize spin polarization, so that the device has a higher electroluminescence asymmetry factor (g CP‑EL ). As can be seen, the device has higher g CP‑EL and higher photoelectric performance.

The invention discloses a ferromagnetic metal / two-dimensional ferromagnetic semimetal heterojunction-based spin electronic device, which comprises a ferromagnetic metal electrode and a single-layer two-dimensional ferromagnetic semimetal material layer, the ferromagnetic metal is nickel (Ni) or cobalt (Co), the two-dimensional ferromagnetic semimetal is ferrous halide FeX2, X is Cl, Br or I, and the thickness of the ferromagnetic metal electrode and the thickness of the two-dimensional ferromagnetic semimetal material layer are smaller than that of the ferromagnetic metal electrode. The two are in edge contact or top contact to form a heterojunction, and the spin injection efficiency close to 100% can be achieved; on the basis of a Ni and ferrous chloride (FeCl2) heterojunction structure, hexagonal boron nitride (h-BN) is introduced as a two-dimensional tunneling barrier layer, and a Ni / FeCl2 / h-BN / FeCl2 / Ni Van der Waals magnetic tunnel junction device can be constructed. According to the structure, the tunneling current of complete spin polarization is reserved in the parallel magnetization direction, the transmissivity is remarkably reduced in the anti-parallel magnetization direction, and the TMR (Tunnel Magnetoresistance) exceeding 3000% can be realized. Through the heterojunction structure and interface configuration design, the spin transport is effectively regulated and controlled on the device level, and the device is suitable for a spin valve, a spin filter and a low-power-consumption magnetic tunnel junction memory.

Disclosed apparatuses include a spintronic, oscillating injection current activated nano-antenna, include a thin-film topological insulator (3D-TI) body, having a top surface and a bottom surface, a first electrode, disposed on the top surface of the 3D-TI body, and a second electrode, disposed on the top surface of the 3D-TI bode, spaced apart from the first electrode. An array of ferromagnetic nanomagnet is disposed on the top surface of the 3D-TI body, between the first electrode and the second electrode.

This invention discloses a spintronic device based on a ferromagnetic metal / two-dimensional ferromagnetic half-metal heterojunction, comprising a ferromagnetic metal electrode and a single-layer two-dimensional ferromagnetic half-metal material layer. The ferromagnetic metal is nickel (Ni) or cobalt (Co), and the two-dimensional ferromagnetic half-metal is ferrous halide FeX2, where X = Cl, Br, or I. The two electrodes can form a heterojunction through edge contact or top contact, achieving a spin injection efficiency close to 100%. Hexagonal boron nitride (FeCl2) is further introduced into the Ni and ferrous chloride (FeCl2) heterojunction structure. h Ni / FeCl2 / BN can be used as a two-dimensional tunneling barrier layer to construct Ni / FeCl2 / h A van der Waals magnetic tunnel junction device based on -BN / FeCl2 / Ni. This structure retains fully spin-polarized tunneling current in the parallel magnetization direction and significantly reduces transmittance in the antiparallel magnetization direction, achieving a tunnel magnetoresistance (TMR) exceeding 3000%. This invention achieves effective control of spin transport at the device level through heterojunction structure and interface configuration design, and is suitable for spin valves, spin filters, and low-power magnetic tunnel junction memories.