1337results about How to "Reduce layout area" patented technology

In a parallel operational processing device having an operational processing unit arranged between memory blocks each having a plurality of memory cells arranged in rows and columns, the respective columns of each memory block are alternately connected to the operational processing units on the opposite sides of the memory block. By selecting one word line in one memory block, data can be transferred to two operational processing units. The number of the word lines selected per one operational processing unit is reduced, and power consumption is reduced. The bit operation units and sense amplifiers/write drivers of the operational processing units have arrangement pitch conditions mitigated and are reduced in number, and an isolation region between the memory blocks is not required and the layout area is reduced. Thus, the parallel operational processing device with a layout area and the power consumption reduced, can achieve a fast operation.

A unit operator cell includes a plurality of SOI (Silicon on Insulator) transistors, write data is stored in a body region of at least two SOI transistors, and the storage SOI transistors are connected in series with each other to a read port or each of the storage SOI transistors is singly connected to the read port. Therefore, an AND operation result or a NOT operation result of data stored in the unit operator cells can be obtained, and operation processing can be performed only by writing and reading data. A semiconductor signal processing device that can perform logic operation processing and arithmetic operation processing at high speed is implemented with low power consumption and a small occupation area.

A non-volatile memory (NVM) cell and array includes a control capacitor, tunneling capacitor, CMOS inverter and output circuit. The CMOS inverter includes PMOS and NMOS inverter transistors. The control capacitor, tunneling capacitor and PMOS and NMOS inverter transistors share a common floating gate, which is programmed/erased by Fowler-Nordheim tunneling. The output circuit includes PMOS and NMOS select transistors. The PMOS inverter and select transistors share a common source/drain region. Similarly, the NMOS inverter and select transistors share a common source/drain region. This configuration minimizes the required layout area of the non-volatile memory cell and allows design of arrays with smaller footprints. Alternately, the tunneling capacitor may be excluded, further reducing the required layout area of the NVM cell. In this case, the NMOS inverter transistor functions as a tunneling capacitor for programming and erasing the cell, and the PMOS inverter transistor functions as a tunneling capacitor for erasing the cell.

It is an object to decrease the number of transistors connected to a capacitor. In a structure, a capacitor and one transistor are included, one electrode of the capacitor is connected to a wiring, and the other electrode of the capacitor is connected to a gate of the transistor. Since a clock signal is input to the wiring, the clock signal is input to the gate of the transistor through the capacitor. Then, on/off of the transistor is controlled by a signal which synchronizes with the clock signal, so that a period when the transistor is on and a period when the transistor is off are repeated. In this manner, deterioration of the transistor can be suppressed.

Source lines for a spin injection magnetic memory cell are arranged parallel to word lines for executing writing/reading of data multiple bits at a time. In a write operation, a source line potential changes in a predetermined sequence such that the source line commonly connected to a plurality of selected memory cells is set to pass a current only in one direction in each stage of the operation sequence. For the data write sequence, a current is caused to flow through memory cells according to write data sequentially, or the memory cell has a resistance state set to an initial resistance state before writing, and then changed to a state according to the write data Fast writing can be achieved in the magnetic memory without increasing a memory cell layout area.

The invention relates to a low dropout linear regulator with a novel structure, which comprises an error amplifier, a driving component, a cushion circuit, a driving component biasing circuit for providing static current for the driving component, and a compensating circuit, wherein the error amplifier adopts a rail-to-rail folding common-source common-mesh operation transconductance amplifier structure, and the cushion circuit comprises a source follower circuit device and a conversion rate intensifier circuit. The regulator adopts the full feedback structure and the driving component biasing circuit to replace a resistor potential-divider network, saves the area of a domain, reduces the power consumption of the system, improves the precision and the stability of output voltage, and reduces the nonlinear distortion, and the like of the system; the error amplifier adopts a rail-to-rail folding common-source common-mesh operation transconductance amplifier structure, and realizes the rail to rail of input and output voltage; the conversion rate intensifier circuit increases the conversion rate of the system; the source follower circuit device and the compensating circuit change the position displacement of zero poles of the system, improves phase margin, and improves the stability of the system.

This invention relates to a method, a computer program product, a device and a system for formatting an object to obtain a formatted object, wherein the object comprises a plurality of elements, and wherein the formatted object is affected by at least one constraint, wherein the constraint is scaled by a first scaling factor to obtain a scaled constraint; wherein at least one of the elements is scaled by a second scaling factor to obtain a scaled element; wherein a layout structure is generated for the plurality of elements including the scaled element under consideration of the scaled constraint; and wherein the layout structure is scaled by a third scaling factor to obtain the formatted object.

A display device is disclosed. The display device includes: a pixel array unit and a driving unit which drives the pixel array unit. The pixel array unit includes rows of scanning line, columns of signal lines, pixels in a matrix state arranged at portions where scanning lines and signal lines cross each other and power supply lines arranged corresponding to respective rows of pixels. The driving unit includes a main scanner performing line-sequential scanning to pixels by each row by supplying a control signal to each scanning line sequentially, a power supply scanner supplying a power supply voltage which is switched to a first potential and a second potential to each power supply line so as to correspond to the line-sequential scanning, and a signal selector supplying a signal potential and a reference potential to be video signal to columns of signal lines so as to correspond to the line-sequential scanning.

The invention relates to a junction termination structure of a transverse high-pressure power semiconductor device, belonging to the technical field of semiconductor power devices. An N-type drift region at a curvature termination of the transverse high-pressure power semiconductor device is shortened in length to ensure that the N-type drift region is spaced with a P-well region by a certain displace, wherein the spaced part is replaced by a P-type substrate, which is equivalent that additional electric charges of the P-type substrate are introduced so that the peak value of an electric field at a pn junction formed the original P-well region and the N-type drift region is reduced, meanwhile, a new peak value of the electric field is introduced at a pn junction formed by the P-type substrate and the N-type drift region, the radius of curvature of the curvature terminal is increased, the excessive concentration of a power line is avoided, and the puncture voltage of the device is increased, wherein the surface of the N-type drift region also can be combined with a surface RESURF structure or an ultra-junction structure. The junction termination structure has the advantages of being capable of decreasing the width of the curvature terminal of the device, saving the layout area of the device and being compatible with a CMOS (Complementary Metal-Oxide-semiconductor Transistor) process, and can be used for manufacturing the transverse high-pressure power device with the advantages of excellent performance, high voltage, high speed and low conduction loss.

A layout design method for a semiconductor device includes a step of arranging transistors, a dummy gate forming step of forming dummy gates, which has a shape identical with a shape including gate electrodes or the gate electrodes and projected parts from active regions of the gate electrodes, in positions in parallel with and a fixed distance apart from the gate electrodes arranged at both ends in a gate length direction on active regions of the transistors and, when the transistors have plural gate electrodes with different gate widths, extending the projected parts to the outside of the active regions by a necessary length, a gate connecting step of, when gate patterns and contact regions are connected to the gate electrodes of the transistors, connecting the gate electrodes and the dummy gates according to a positional relation between the gate electrodes and the dummy gates, and a wiring step of wiring a metal layer. It is possible to design a semiconductor device having a smaller area than that in the past and with a less design man-hour.

The invention provides a circuit for outputting adjustable positive, negative or zero temperature coefficient current and voltage reference, including: a start-up circuit, a positive and negative temperature coefficient current generation circuit, a feedback stable and negative temperature coefficient current derivation circuit, and the temperature coefficient can be Adjusted current reference, voltage reference synthesis circuit. The invention is realized under the standard CMOS technology, has simple structure, low input voltage, and can generate current reference and voltage (VREF) reference with adjustable temperature coefficient, which can be positive, negative or zero temperature coefficient.

A differential pair of an RF integrated circuit device is disclosed. The differential pair of the integrated circuit device includes a first MOS formed by a multiple finger configuration, having a plurality of first gate fingers; a second MOS formed by the multiple fingers configuration, having a plurality of second gate fingers, wherein each two first gate fingers interdigitate with each two second gate fingers.

A driver circuit includes a circuit 200, a transistor 101_—1, and a transistor 101_—2. A signal is selectively input from the circuit 200 to a gate of the transistor 101_—1 and the transistor 101_—2, so that the transistor 1011 and the transistor 101_—2 are controlled to be on or off. The transistor 101_—1 and the transistor 101_—2 are turned on or off; thus, the wiring 112 and the wiring 111 become conducting or non-conducting.

In a bi-directional shift register and a liquid crystal display device having the bi-directional shift register, the shift register further includes a dummy stage for resetting a last stage. The dummy stage is reset by a control signal of the last stage or by the output signal of the dummy stage. Therefore, power consumption and layout area may be reduced. The shift register includes a plurality of stages and two dummy stages, and two selection signals for selecting shift direction is applied to each of the stages.

In a layout structure capable of independent supply of a substrate or well potential from a power supply potential, further reduction in layout area is achieved. A reinforcing power supply cell is inserted in a cell line in which a plurality of cells are arranged in series. Each of the cells includes an impurity doped region for supplying a substrate or well potential NWVDD which is different from a positive power supply potential VDD to a p-type transistor arranging region. The reinforcing power supply cell includes a power supply impurity doped region to which an impurity doped region of an adjacent cell is electrically connected and a power supply wire provided in a wiring layer formed above the power supply impurity doped region and electrically connected to the power supply impurity doped region.

It is an object to suppress deterioration in characteristics of a transistor in a driver cricuit. A driver circuit includes a first transistor, a second transistor including a gate and one of a source and a drain to which a second signal is inputted, a third transistor whose gate is electrically connected to one of a source and a drain of the first transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off, and a fourth transistor whose gate is electrically connected to the other of the source and the drain of the second transistor and which controls whether a voltage state of an output signal is set or not by being turned on/off.

Disclosed is a low-cost hybrid storage solution that allows Code like sector-alterable NOR and Data like block-alterable NAND and byte-alterable EEPROM being integrated on a same die. The disclosed combo NVM design of the present invention is a truly Data-oriented NVM design that allows 2T-EEPROM to integrate both 0.5T-NAND and 1T-NOR without sacrificing any EEPROM's byte-write performance in the same die. The invention provides several new embodiment sets of preferable bias conditions of Program, Program-Inhibit, Erase and Erase-Inhibit for operating bit-write, byte-write, sector-write and page-write for several preferable Flotox-based EEPROM, NOR and NAND or combo NVM arrays that include types of shared SL, 8-pair BLs and SLS, with or without GBL, normally Erased Vt and Programmed Vt, or the reversed Erased-Vt or Programmed-Vt, etc. Further disclosed is a flexible X-decoder design to allow the flexible selection of pages to be erased to save erase time. Also disclosed is using on-chip negative voltage for FT's gate along with the less positive HV applied to FTs' channel region for same write performance but with the benefits of channel length reduction in cell and less BVDS electric requirement in peripheral devices for more scalable manufacturing process.

A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.