35results about How to "Channel width reduction" patented technology

A driver circuit includes a circuit 200, a transistor 101—1, and a transistor 101—2. A signal is selectively input from the circuit 200 to a gate of the transistor 101—1 and the transistor 101—2, so that the transistor 1011 and the transistor 101—2 are controlled to be on or off. The transistor 101—1 and the transistor 101—2 are turned on or off; thus, the wiring 112 and the wiring 111 become conducting or non-conducting.

A driver circuit includes first to third transistors, a first circuit, and a second circuit. In the first transistor, a first terminal is electrically connected to a second wiring, a second terminal is electrically connected to a first wiring, and a gate is electrically connected to the second circuit and a first terminal of the third transistor. In the second transistor, a first terminal is electrically connected to the first wiring, a second terminal is electrically connected to a sixth wiring, a gate is electrically connected to the first circuit and a gate of the third transistor. A second terminal of the third transistor is electrically connected to the sixth wiring. The first circuit is electrically connected to a third wiring, a fourth wiring, a fifth wiring, and the sixth wiring. The second circuit is electrically connected to the first wiring, the second wiring, and the sixth wiring.

There is described a rotary knife for use in a cutting apparatus, comprising a central hub adapted to be mounted with respect to a rotational driveshaft to define an axis of rotation; and a plurality of blades extending outwards from the hub; each blade having respective channels extending across a surface of the blade in a direction substantially parallel to the axis of rotation. There is also described a cutting apparatus having a rotary knife comprising a central hub adapted to be mounted with respect to a rotational driveshaft to define an axis of rotation; and a plurality of blades extending outwards from the hub; each blade having respective channels extending across a surface of the blade in a direction substantially parallel to the axis of rotation.

A static memory and a static memory cell are provided. The static memory cell includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a first switch, a second switch, a third switch, a first pull-down switch, and a second pull-down switch. When a data writing operation is performed, the latching capability of the latch circuit constituted by the first to the sixth transistors is disabled by turning off the second transistor or the fifth transistor, so that the speed of the data writing operation is increased and the data writing performance is improved. The first switch and the second switch provide a path for reading or writing data, and the third switch is coupled to a bit line for receiving data from or transmitting data to the bit line.

The invention provides a preparation method of a thin film transistor of a flexible electronic device. The method comprises the following steps of: (1) preparing a bendable and stretchable substrate; (2) stretching the substrate, and coating an adhesive on a surface of a stretched rubber substrate; (3) depositing a gate on the substrate; (4) depositing an organic dielectric layer unit on the device which is processed in the step (3); (5) respectively depositing a source unit layer and a drain unit layer on the organic dielectric layer unit; (6) loosening the substrate, releasing loads which are acted on the substrate, and carrying out heat treatment to eliminate an interface stress and a pressure stress of the device; and (7) depositing the organic dielectric layer unit. The invention provides the method for mechanically stretching the substrate, so the channel width of the device is reduced, manufacturing accuracy is improved effectively, and the resolution ratio of the flexible electronic device is improved.

Quantum wire is formed on the bottom of a V-shaped groove in a V-grooved substrate as a channel between source and drain electrodes or as at least part of the channel. A photocarrier accumulation region is provided within the quantum wire or at a position connected to or adjacent to the quantum wire for accumulating charges generated when light shines onto a photosensitive region that comprises at least a clad layer that covers the quantum wire. A recess is provided in the upper clad layer to localize the photocarrier accumulation region. As a result, it is possible to provide a photodetector that exhibits high sensitivity, high speed and low power consumption in an expanded wavelength region. It is also possible to provide a photodetector capable of constructing core portions thereof by one-time selective growth.

The invention discloses an OLED display device, which comprises an OLED pixel driving circuit. The OLED pixel driving circuit comprises a first thin film transistor (T1), a second thin film transistor(T2), a third thin film transistor (T3), a storage capacitor (Cst) and an organic light emitting diode, wherein the first thin film transistor (T1) is a double-gate oxide thin film transistor, and the second thin film transistor (T2) and the third thin film transistor (T3) are top gate self-aligned oxide thin film transistors. The invention further discloses a preparation method of the TFT arraysubstrate. The TFT array substrate is used for preparing the OLED display device.

A method for manufacturing a thin film transistor (TFT) is disclosed. The method is achieved by forming and defining a source and a drain of a thin film transistor through two lithographic processes cycles so that the channel length (L) of the thin film transistor can be reduced to 1.5 to 4.0 μm. Besides, the Ion current of the thin film transistor is increased as the channel length (L) is decreased. Therefore, the component area of the thin film transistor is decreased as the channel width (W) is decreased. Thus, the aperture ratio of the TFT-LCD can be increased due to the decreased component area of the thin film transistor.

The invention relates to a carrier which comprises a front frame, a storage battery, an oil cylinder, a drive axle, a hydraulic station, a controller and an operating handle, wherein the front frame is connected to the drive axle through the oil cylinder; the hydraulic station, the controller and the storage battery are parallelly mounted on the front frame; the storage battery is located on one side of the oil cylinder; the hydraulic station and the controller are located on the other side of the oil cylinder; the storage battery and the controller are connected to the front frame in a pluggable manner; the operating handle is arranged on the drive axle; and a front fork arm is also arranged on the front frame. By adjusting the layout of the whole carrier, the battery, the hydraulic station and the controller are separately placed on two sides of the oil cylinder to achieve the purposes of reducing the integral size and reducing the radius of turning circle and the width of a channelas far as possible, so that the carrier is used conveniently in more environment. The controller and the storage battery in pluggable designs are conveniently detached and maintained.

A method of a semiconductor device comprises: a) depositing a first semiconductor layer and a second semiconductor layer in a semiconductor substrate in series; b) forming a first groove penetrating the first and second semiconductor layers and placed adjacent to an element region by partly etching the first and second semiconductor layers; c) forming a supporting member that supports the second semiconductor layer and covers over the second semiconductor layer and is embedded into the first groove; d) forming a second groove that exposes the first semiconductor layer from the bottom of the second semiconductor layer supported by the supporting member and is placed near the element region; and e) forming a cavity between the semiconductor substrate and the second semiconductor layer in the element region by etching the first semiconductor layer via the second groove under a specific condition in which the first semiconductor layer is easily etched, compared to the second semiconductor layer. Step b) further comprises: forming an alignment mark on the semiconductor substrate while forming the first groove by photolithography and etching for forming the first groove. Step d) further comprises aligning the position of photolithography by using the alignment mark.

The present invention provides a liquid crystal display device and display control method thereof Each sub-pixel of the liquid crystal display device includes multiple display regions and multiple control switches for controlling the display regions to receive corresponding data voltages, wherein, the multiple control switches includes a first control switch set and a second control switch set, and the first control switch set and the second control switch set are connected in parallel with the same data line. Through the above way, the present invention can increase the pixel aperture ratio of the wide-viewing-angle liquid crystal display device and decrease the power consumption.

The invention provides a method for manufacturing a thin film transistor. The manufacturing method includes: forming a grid electrode on a substrate and a grid electrode insulating layer that covers the grid electrode; forming a channel layer on the grid electrode insulating layer in a position corresponding to the grid electrode, and coating an etching barrier layer on the channel layer; performing high-temperature hard roasting treatment on the etching barrier layer; coating a photoresistance layer on the etching barrier layer; patterning the photoresistance layer, and developing two through guide holes; using the patterned photoresistance layer as a shield, etching the etching barrier layer to the channel layer to form two contact holes; removing the remaining photoresistance layer; and forming a source electrode and a drain electrode in the positions of the two contact holes.

The present invention provides a coin arranging / conveying apparatus that is capable of reliably conveying coins one at a time into a coin passage unit even if there is such a great difference in diameter or thickness of coins. A first gate portion is defined by a separation roller, an arranging / conveying surface of an arranging / conveying belt, and a movable roller. The movable roller faces the underside of the arranging / conveying surface of the arranging / conveying belt. A second gate portion is defined by a coin passage upstream end roller, and the portion of a transfer belt wrapped around the coin passage upstream end roller. Coins are arranged in a single layer in single file by means of the first gate portion, as well as the second gate portion.

The invention provides a transverse moving type parking system. The transverse moving type parking system comprises a transverse carrier and a parking space, wherein the transverse carrier comprises a bottom frame and an upper frame; the bottom frame comprises a middle axle and walking bridge frames arranged on the two sides of the middle axle; the walking bridge frames can drive the bottom frame to enter the bottom of a vehicle body in the transverse direction; the upper frame comprises an upper frame body capable of doing lifting motion and supporting mechanisms fixed to the two ends of the upper frame body; the supporting mechanisms can support the bottoms of wheels; the parking space comprises weighing mechanisms matched with the front wheels and the rear wheels correspondingly and a lifting platform located between the weighing mechanisms; each weighing mechanism comprises weighing units supporting the wheels on the two sides correspondingly; and the lifting platform can ascend to be flush with the surfaces of the weighing units. The transverse moving type parking system has the beneficial effects that transverse carrying of vehicles is achieved, the channel width of a stereo garage can be effectively reduced, the land utilization rate is increased, the vehicles can be parked on the round garage in the tangential direction, and therefore the diameter of the round garage is reduced, and the construction difficulty is lowered.

A miniature multi-channel waveguide switch comprises an electromagnetic system and a guide system, wherein a guide rotor in the guide system adopts a mode of combining uniform bent waveguide paths and a non-uniform straight waveguide path, so that the path width is reduced, the switch sizeis greatly reduced, and the purpose of the miniature switch is achieved. Further, a non-uniform straight waveguide structure adopts a gradually-changing compensation method, the parameter deterioration brought by discontinuity is reduced, compensation is achieved by optimizing an axial choke groove, a circumferential choke groove and a polarization choke groove, and the stability of microwave performance is ensured.

A scanning circuit comprises an output circuit, a voltage stabilization circuit, and an input circuit. The input circuit comprises: a first switch, a second switch, and a third switch. The first switch is turned on according to a first control voltage on a control node to provide a first operating voltage for a working node. The second switch is turned on according to a first control voltage on the control node to provide a first operating voltage for an operating node. The third switch is configured to provide a first control voltage for the control node. When the first switch is turned on, the first control voltage on the control node changes according to a voltage change on the working node.

The invention provides a thin film transistor. The thin film transistor includes the following components of: a gate; an gate insulating layer covering the gate; a channel layer which is arranged on the gate insulating layer and is corresponding to the gate; an etching barrier layer which covers the channel layer and at least comprises one organic barrier layer and a hard mask layer arranged on the organic barrier layer in a layer-upon-layer manner, wherein the organic barrier layer is a cured transparent organic material layer, and the hard mask layer is formed on the surface of the organic barrier layer and is used for enhancing the hardness of the organic barrier layer, wherein the surface of the organic barrier layer faces a direction opposite to the channel layer; two contact holes which pass through the etching barrier layer; as well as a source and a drain which are connected with the channel layer through the two contact holes. The invention also provides a display array substrate using the thin film transistor.

The invention relates to the technical field of electroplating, and particularly discloses a backflow tank, a matching structure and an electroplating production line. The backflow tank comprises a tank body, a first plate is arranged in the tank body to divide an inner cavity of the tank body into a first backflow cavity and a plate passing channel which are arranged side by side, the two ends, in the length direction, of the plate passing channel penetrate through the two opposite side walls of the tank body, and a first inlet and a first outlet are correspondingly formed in the two side walls of the tank body , so that a workpiece can pass through the plate passing channel. The first plate divides the inner cavity of the tank body into the first backflow cavity and the plate passing channel which are arranged side by side, a first inlet and a first outlet of the plate passing channel penetrate through two oppositely-arranged side walls on the tank body, and when the workpiece enters the plate passing channel from a previous procedure, the workpiece can enter the plate passing channel along the first inlet and is output from the plate passing channel from the first outlet, so that the workpiece can be smoothly conveyed in the plate passing channel in the conveying process, and the breakage rate of the workpiece is reduced.

The invention discloses a mixing condensing system based on an up-in-down-out superposed double-flow-path steam condenser. The steam condenser is connected with an input end of a mixing condenser through an air extracting pipeline, and an output end of the mixing condenser is connected with the steam condenser through a condenser reflux pipeline and also connected with the condenser air extracting pipeline through a vacuum pump. A circulating water inlet is higher than a circulating water outlet. A first flow path pipe bundle region is positioned above a second flow path pipe bundle region. By adopting the single-back-pressure up-in-down-out superposed double-flow-path steam condenser (of which the first flow path pipe bundle region is above the second flow path pipe bundle region) and the mixing condensing system thereof, the mainstream flow path of the condenser exhaust steam is short, the flow resistance is small, the exhaust steam dynamic pressure can be converted into static pressure more easily, and the heat exchange effect is reinforced. More importantly, the channel width of the condenser exhaust steam flowing to the lower pipe bundle can be reduced, and the pipe bundle layout density can be increased to re-optimize the tube bundle arrangement, thereby lowering the height or width of the condenser pipe bundle region and lowering the condenser exhaust steam pressure.

An object is to achieve high electrical characteristics (a high on-state current value, an excellent S value, and the like) and a highly reliable semiconductor device. A high on-state current value is achieved, whereby a further reduction in channel width (W) is achieved. A second conductive layer functioning as a gate electrode has a function of electrically surrounding side surfaces of a semiconductor film in a cross section in a channel width direction. With this structure, on-state current of a transistor can be increased. To achieve a semiconductor device with less hot-carrier degradation, the gate electrode has a tapered portion.

The invention relates to a semiconductor structure and a preparation method thereof. The method comprises the steps that: a substrate is provided, a shallow trench isolation structure is formed in the substrate, wherein the shallow trench isolation structure defines a plurality of active regions which are arranged at intervals in the substrate through isolation; a word line groove is formed in the substrate, and the depth of the part, located in the active regions, of the word line groove is smaller than that of the part, located in the shallow groove isolation structure, of the word line groove, so that a first protruding structure is formed at the bottom of the part, located in the active regions, of the word line groove; an etching protection layer is formed on the surface of the first protruding structure; a part of the shallow trench isolation structure is removed, so that a second protruding structure is formed based on the first protruding structure, the upper side wall and the top of the second protruding structure are covered with the etching protection layer, and the lower part of the second protruding structure is exposed by the removed part of the shallow trench isolation structure; the lower part of the second protruding structure is etched, so that the width of the lower part of the second protruding structure is smaller than that of the upper part of the second protruding structure; and a word line structure is formed in the word line groove.

An organic light emitting display panel includes a backplate, an organic light emitting module disposed on the backplate, and a lip portion of the backplate is defined between an edge of the backplate and an edge of the organic light emitting module. An encapsulation layer is configured to encapsulate the backplate and the organic light emitting module and cover the lip portion. The encapsulation layer includes an encapsulation resin film laminated on the backplate and a metal film disposed on the encapsulation resin film. The metal film extends toward the backplate and bends inwardly within the encapsulation resin film on the lip portion of the backplate to form a groove.

The invention relates to a high-density array disk cabinet, which includes a cabinet body, a plurality of disk array hosts, and a management communication unit. The cabinet body is a standard cabinetbody and is divided into a plurality of installation units. The management communication unit is installed in one of the installation units. The other installation units are all provided with two-wayslide rails. Two disk array hosts are slidingly mounted on the two-way slide rails, and can be pushed and pulled from the front side and the back side of the cabinet body respectively. Each disk arrayhost includes a frame, a control circuit board, two interface circuit boards and multiple cloud disks. The control circuit board is connected to the management communication unit through a retractable power line and a network cable. The interface circuit board is electrically connected to the control circuit board and has two rows of interfaces on its upper surface. The cloud disks are distributed on both sides of the interface circuit board and are connected with the interfaces through corresponding connecting wires. By using the standard cabinet body, the high-density array disk cabinet canbe put in a standard computer room and has a compact structure. A 42U standard cabinet can store up to 1728 cloud disks, which greatly improves the space utilization rate of the cabinet.