Preparation method of thin film transistor of flexible electronic device

A technology for flexible electronic devices and thin film transistors, which is applied in the field of solution manufacturing of thin film transistors of flexible electronic devices, can solve problems such as reduced structural reliability, structural voids, cracks, etc., so as to improve manufacturing efficiency, reduce production costs, and reduce The effect of key dimensions

Active Publication Date: 2011-08-31

WUHAN INTELLIGENT EQUIP IND INST CO LTD

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AI-Extracted Technical Summary

Problems solved by technology

Therefore, the existing inkjet printing technology is mostly used in the printing and manufacturing of PCB circuit boards, which cannot meet the requirements of high-resolution manufacturing of high-performance flexible electronics.

Invention patent CN 1425204A uses traditional inkjet printers to deposit materials on selected positions of the substrate. In the solution manufacturing of multiple transistors, the repulsion force of the second surface area to the selected solvent is greater than that of the first surface area, which is obtained by the user. Defined channel width, but minimum width is only 5 microns

[0006] (1) The resolution of the inkjet printing process is relatively low, usually 20-50 microns. Due to fa...

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Method used

(8) additional flexible substrate unit 5, this step is an optional step, substrate unit 5 can be plastic substrate, flexible thin glass substrate and flexible stainless steel sheet substrate, for limiting the deformation of the device after forming, keep the stability of size .

(9) additional flexible substrate unit 5, this step is an optional step, substrate unit 5 can be plastic substrate, flexible thin glass substrate and flexible stainless steel sheet substrate, for limiting the deformation ...

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Abstract

The invention provides a preparation method of a thin film transistor of a flexible electronic device. The method comprises the following steps of: (1) preparing a bendable and stretchable substrate; (2) stretching the substrate, and coating an adhesive on a surface of a stretched rubber substrate; (3) depositing a gate on the substrate; (4) depositing an organic dielectric layer unit on the device which is processed in the step (3); (5) respectively depositing a source unit layer and a drain unit layer on the organic dielectric layer unit; (6) loosening the substrate, releasing loads which are acted on the substrate, and carrying out heat treatment to eliminate an interface stress and a pressure stress of the device; and (7) depositing the organic dielectric layer unit. The invention provides the method for mechanically stretching the substrate, so the channel width of the device is reduced, manufacturing accuracy is improved effectively, and the resolution ratio of the flexible electronic device is improved.

Application Domain

Solid-state devicesSemiconductor/solid-state device manufacturing +1

Technology Topic

Flexible electronicsChannel width +7

Image

Examples

Experimental program(2)

Example Embodiment

[0048] Example 1

[0049] image 3 It is a schematic diagram of the process of preparing an all-organic thin film transistor (TFT) in Example 1 of the present invention. As can be seen from the figure, the process of preparing the present invention is:

[0050] (1) Prepare the substrate unit 4, which is a rubber substrate, which can be bent and stretched;

[0051] The flexible substrate selects a rubber substrate with high elastic deformation ability, which requires an elastic strain of more than 50%, and can be restored to its original state after the external force is released.

[0052] (2) Stretching and surface treatment for the substrate unit, usually stretching more than 50%, and coating the surface with adhesive;

[0053] In order to achieve the above purpose, the rubber substrate needs to have sufficient strength. The thickness of the rubber substrate can be referred to So that the rubber substrate can be restored to its original state as much as possible after releasing the external load after depositing the functional layer.

[0054] (3) Depositing the grid on the substrate;

[0055] A layer of adhesive layer with a lower glass transition temperature is coated on the surface of the rubber substrate to realize the adhesion between the substrate and the functional layer. The glass transition temperature of the substrate and the functional layer of the device is required to be higher than the glass transition temperature of the adhesive layer.

[0056] (4) Depositing the organic dielectric layer unit 7;

[0057] (5) Depositing the source unit 8 of polymer material and the drain unit 9 of polymer material;

[0058] Inkjet printing is performed in the order of the functional layers of the designed electronic device (thin film transistor) to form patterns. The glass transition temperature of the functional layer of the device is required to be higher than the glass transition temperature of the adhesive layer.

[0059] (6) The substrate is relaxed for heat treatment

[0060] a) It is necessary to gradually release the original load on the substrate so that the substrate can recover part of its deformation in a free state, and the functional layer is under pressure at this time. The channel size of the device can be reduced for the first time before heat treatment.

[0061] b) Heat treatment process. Taking advantage of the lower glass transition temperature of the adhesive layer, the heat treatment temperature is controlled to be lower than the glass transition temperature of the substrate and device functional layer, and higher than the glass transition temperature of the adhesive layer, so that the device layer and rubber substrate will produce Relative slippage. The heat treatment is generally an annealing treatment. The heat treatment can achieve: (i) reduce the channel size of the device for the second time and improve the performance of the device; (ii) it can eliminate the device-substrate interface stress and the compressive stress of the device, and improve the device performance Structural reliability.

[0062] (7) Deposition of organic semiconductor layer unit 10

[0063] (8) Adding the flexible substrate unit 5, this step is an optional step, the substrate unit 5 can be a plastic substrate, a flexible thin glass substrate and a flexible stainless steel sheet substrate, which is used to limit the deformation of the device after forming and maintain the dimensional stability.

Example Embodiment

[0064] Example 2

[0065] Figure 4 It is a schematic diagram of the process of manufacturing an organic-inorganic thin film transistor in Example 2 of the present invention. It can be seen from the figure that the process of manufacturing an organic-inorganic thin film transistor of the present invention is:

[0066] (1) Prepare the substrate unit 4, which is a rubber substrate, which can be bent and stretched;

[0067] The flexible substrate selects a rubber substrate with high elastic deformation ability, which requires an elastic strain of more than 50%, and can be restored to its original state after the external force is released.

[0068] (2) Stretching and surface treatment for the substrate unit, usually stretching more than 50%, and coating the surface with adhesive;

[0069] A layer of adhesive layer with a lower glass transition temperature is coated on the surface of the rubber substrate to realize the adhesion between the substrate and the functional layer. The glass transition temperature of the substrate and the functional layer of the device is required to be higher than the glass transition temperature of the adhesive layer.

[0070] (3) Depositing the gate 6 on the substrate;

[0071] (4) Depositing the organic dielectric layer unit 7;

[0072] (5) Depositing the source unit 11 of metal nanoparticle material and the drain unit 12 of metal nanoparticle material;

[0073] The glass transition temperature of the functional layer of the device is required to be higher than the glass transition temperature of the adhesive layer.

[0074] (6) Perform the first heat treatment at a temperature slightly higher than the melting point of the nanoparticle layer and lower than the glass transition temperature of other structural layers, so that the nanoparticles are melted to form a bulk metal, and the source unit 11 and the drain unit 12 are transformed into The source unit 111 and the drain unit 121, at this time the substrate remains in a stretched state;

[0075] (7) Substrate relaxation and heat treatment. Release the original load on the substrate, so that the substrate can recover part of its deformation in a free state;

[0076] Gradually release the tensile strain of the rubber substrate unit 4, so that the substrate returns to its original shape, so that there is a relative slip between the device layer and the substrate, which can effectively eliminate the internal force of the interface and reduce the channel size;

[0077] Then use the same heat treatment process as the organic electronic device.

[0078] (8) Depositing the organic semiconductor layer unit 10;

[0079] (9) Attaching the flexible substrate unit 5, this step is an optional step. The substrate unit 5 can be a plastic substrate, a flexible thin glass substrate and a flexible stainless steel sheet substrate, which is used to limit the deformation of the device after forming and maintain dimensional stability.

[0080] In the above embodiments 1 and 2, the order of step (3) and steps (5) and (6) can also be interchanged, that is, the source unit 11 and the drain unit 12 are deposited on the substrate first, and after the heat treatment, the deposit The organic dielectric layer unit 7 and the deposition gate 6.

[0081] The entire device prepared in the previous step is attached to the additional substrate unit. The additional substrate can be a plastic substrate, a flexible thin glass substrate, a flexible stainless steel foil substrate, etc., which can keep the geometric dimensions of the device stable. According to usage requirements, this step is optional.

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Classification and recommendation of technical efficacy words

Improve manufacturing efficiency
Reduce manufacturing cost

Preparation method of thin film transistor of flexible electronic device

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

Image

Examples

Example Embodiment

Example Embodiment

PUM

Description & Claims & Application Information

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