1results about How to "Reduce critical size" patented technology

The application provides a semiconductor structure and a forming method thereof, wherein a first through silicon via structure is formed through two processes of front side processing and back side processing, and a second through silicon via structure is formed through one process of front side processing; since the first through silicon via structure is formed through two processes, the critical dimension and the depth adjustment range of the first through silicon via structure are large, so that the first through silicon via structure can be designed to have a small critical dimension, and the critical dimension is reduced; in addition, the first through silicon via structure and the second through silicon via structure are connected with back-end metal interconnections located on different planes, so that the process window of the back-end metal wiring is increased.