344 results about "Wire width" patented technology

The invention relates to a nickel cobaltate-graphene composite material and a preparation method thereof. The composite material comprises graphene and nickel cobaltate, wherein nickel cobaltate nanowires are uniformly grown on a graphene sheet, the wire length of the nickel cobaltate nanowires is 50-300nm, and the wire width is 5-30nm. The preparation method comprises the following steps of: taking a graphene oxide water solution and a cobalt salt and nickel salt water solution which are dispersed in an ultrasonic manner, mixing, further adding a precipitator, uniformly stirring and mixing, transferring into a high-temperature reaction kettle, performing hydro-thermal reaction for a certain period of time, filtering, washing and drying an obtained product, and further performing thermal treatment so as to obtain the nickel cobaltate nanowire-graphene composite material. The nickel cobaltate nanowire-graphene composite material prepared by the method disclosed by the invention has the advantages of high single-electrode capacitance and good cycle performance, and is suitable for being used as an electrode material of a super-capacitor.

A integrated circuit (IC) chip with ESD protection level and the system and method of wiring the IC chip. Minimum wire width and maximum resistance constraints are applied to each of the chip's I/O ports. These constraints are propagated to the design and array pads are wired to I/O cells located on the chip. Thus, wiring is such that wires and vias to ESD protect devices are wide enough to provide adequate ESD protection level. The design is then verified by first identifying the chip pads, I/O cells and ESD protect devices. Connections between these three structures are verified. Wires between the ESD protect devices and the chip pads and I/O cells are shrunk such that unsuitable connections becomes opens (disconnected) and are found in subsequent checking. Finally connections to guard rings are checked. Power rails are checked in a similar manner.

A integrated circuit (IC) chip with ESD robustness and the system and method of wiring the IC chip. Minimum wire width and maximum resistance constraints are applied to each of the chip's I/O ports. These constraints are propagated to the design. Array pads are wired to I/O cells located on the chip. Unused or floating pads may be tied to a power supply or ground line, either directly or through an electrostatic discharge (ESD) protect device. A multi-supply protect device (ESDxx) coupled between pairs of supplies and ground or to return lines is also included. Thus, wiring is such that wires and vias to ESD protect devices are wide enough to provide adequate ESD protection. Robust ESD protection is afforded all chip pads. The design may then be verified.

The invention relates to a super low-loss and small-line width microwave ferrite material and a preparation method for the microwave ferrite material and belongs to the field of microwave communication and magnetic materials. The main phase of the material is of a johnstonotite structure, and the chemical formula of the material is Y3-2x-yCa2x+yFe5-x-y-zVxZryAlzO12, wherein x is not less than 0.02 but is not more than 0.25, y is not less than 0.05 but is not more than 0.25, and z is not less than 0.01 but is not more than 0.25. The preparation method comprises the following steps of: calculating according to chemometry and weighing a raw material, vibratory milling, presintering, vibratory grinding and coarse crushing, sanding fine crushing, spray granulation, compression moulding and sintering. Proved by testing, the ferromagnetic resonance line width deltaH of the obtained material is not more than 1.27KA/m, the dielectric loss tgdeltae is not more than 0.5*10-4, and the insertion loss of an assembled microwave device is not more than 0.21dB, and thereby, the stability and the reliability of the obtained material are greatly enhanced, and the application range is broadened. The manufactured microwave ferrite device has the advantages of wide working band and low insertion loss.

The invention provides a flexible stretchable conductive circuit, a preparation method and use thereof. The invention also provides double-sided wiring, multilayer board, flexible display, flexible electronics, and/or sensor comprising the flexible stretchable circuit described above. The method for preparing flexible stretchable conductive circuit provided by the invention is simple and rapid, and is generally applicable to various substrate materials, the liquid metal is used in a small amount, does not require additional external force, and the pattern does not generate cracks, the wire width is controllable, has a high resolution and it's very suitable for mass production.

The invention belongs to the field of microelectronic material, and relates to a preparation method of a flexible copper electrode pattern in a micron level wire width. The preparation method provided by the invention is a ''whole addition'' method, which means that metal copper only precipitates on a predetermined position on a plastic substrate. A specific process comprises steps of plastic substrate cleaning, drying, surface modification, ultraviolet irradiation under a photomask and chemical coppering, etc. The flexible copper electrode pattern prepared by the invention has the following advantages that (1) precision of the electrode pattern is determined by the photomask to reach a micron level wire width; (2) most of the process is carried out in solution, so the process does not require large-scale apparatus equipment and rigorous environment of anultraclean chamber and is suitable for low cost and large scale production; (3) the electrode pattern and the plastic substrate are firmly bonded, can stand repeat folding and have long service life and high reliability; (4) the electrode pattern has good conductivity and is beneficial for reducing energy consumption during usage. The flexible copper electrode pattern prepared by the invention can be widely applied to industrial fields of flexible transistor, flexible solar cell and flexible luminescent device, etc.

The invention discloses a display panel and a display device. The display panel comprises a display module and a fingerprint recognition module, wherein the display module comprises an array base plate and a plurality of pixel units positioned on the array base plate; the fingerprint recognition module is positioned at one side, far away from the pixel units, of the array base plate; the fingerprint recognition module comprises a first base plate and at least one fingerprint recognition unit positioned on the first base plate; the fingerprint recognition unit is used for performing fingerprintrecognition according to light rays reflected to the fingerprint recognition unit through a touch main body; the array base plate comprises a plurality of light transmission regions and a plurality of non-light transmission regions; the array base plate also comprises a plurality of metal wires; the ratio of the wire width of at least one metal passing wire corresponding to at least one light transmission region to the wire width corresponding to the arrangement part of the non-light-transmission region is smaller than 1. By using the technical scheme, compared with the prior art, the displaypanel and the display device have the advantages that the wire width of the at least one metal passing wire corresponding to at least one light transmission region is reduced; the fingerprint recognition signal quantity of the fingerprint recognition unit is improved.

The invention provides a method for manufacturing an anode screen plate for improving the solar cell silicon sheet conversion rate. The method comprises the following steps: 1, superposing and contrasting an anode printing figure and a screen plate figure by computer software; 2, adjusting the spacing between adjacent longitude wires on the fine grid wire part of the anode printing figure of a corresponding solar cell silicon sheet; 3, increasing the wire diameters of the longitude wires and latitude wires of the anode screen plate outside of the anode printing figure of the solar cell silicon sheet; and 4, completing the manufacturing of the screen plate through in an electroforming or micro-cutting manner according to the figure. The method solves a problem that the conversion rate of the solar cell silicon sheet cannot breakthrough because the printing of screen plates in the prior art is discontinuous and nonuniform, and the spacing between the adjacent longitude wires of the screen plate is adjusted to make the fine grid wire of the anode printing figure have no network nod blocks. The screen plate manufactured through adopting the method has the advantages of no discontinuity after the silver slurry printing, uniform printing, fine grid wire width, and improvement of the cell sheet conversion rate.

A touch panel includes: a substrate; an X axis direction electrode part; and a Y axis direction electrode part. The X axis direction electrode part includes a plurality of fine metal wires formed on one main surface (a first main surface) of the substrate. The Y axis direction electrode part includes a plurality of fine metal wires formed on another main surface (a second main surface) of the substrate. In bridge regions in which the X axis direction electrode part and the Y axis direction electrode part overlap in a plan view, the wiring pattern of the plurality of the fine metal wires included in the X axis direction electrode part is identical to the wiring pattern of the plurality of the fine metal wires included in the Y axis direction electrode part. In the bridge regions, the wire width of the fine metal wires included in the X axis direction electrode part is larger than the wire width of the fine metal wires included in the Y axis direction electrode part.

The invention discloses a touch screen sensing component and a production method thereof. The production method includes the steps of printing a sheet of photosensitive conductive material on the side of a transparent electrode to obtain a photosensitive conductive sheet; and exposing the photosensitive conductive sheet to light under a photomask with a preset pattern, and developing to obtain an outgoing wire of the transparent electrode. The production method has the advantages that the outgoing wire is made of the photosensitive conductive material, the traditional printing is combined with exposure and development; and accordingly, fine lines are generated by the exposure and development, the complex process of metal film evaporation and etching and photoresist stripping is avoided, and the production cost of fine wires is reduced. The outgoing wires of the touch screen sensing component produced by the method are 30 micrometers/30 micrometers in wire width/wire spacing, and the touch screen sensing component meets the design requirement of market for narrow-frame touch screens.

In a second-conductive-sheet for a touch-panel, a plurality of upper-detection-electrodes disposed in a detection region and a plurality of second terminal wiring portions disposed in a peripheral wiring region to electrically connect the upper-detection-electrodes to second terminal portions and are formed. Each of the upper-detection-electrodes is made of a mesh-patterned first metal mesh having intersecting thin conductive metal wires, and each of the second terminal wiring portions is made of a mesh-patterned second metal mesh having intersecting thin conductive metal wires made of the same material as the thin conductive metal wires constituting each of the upper detection electrodes. The wire width of the first metal mesh is set to be equal to or less than 5 μm, and the extension direction of the thin conductive metal wires constituting the first metal mesh and the second metal mesh is inclined with respect to a bending line direction of a bent portion of a second-resin-film.

The present invention provides a surface-mounting inductor resolving the requirement for downsizing and a low profile having good assembling workability, an improved electrical characteristic, and no leakage magnetic flux. The surface-mounting inductor comprises a pot-type core having an external wall, a rectangular coil fixed to the pot-type core, a pair of electrodes provided on an outer periphery surface of the pot-type core, and a cover core for closing an opening end of the pot-type core. The pot-type core comprises a positioning mechanism for positioning with the cover core at the opening end, and two U shape windows having an open space adjacently over the electrode. The height of the bottom face of one U shape window is higher than that of the other U shape window by the width of a rectangular wire, and a protruding portion (43) having a height corresponding to the wire width of the rectangular coil is provided to the part of the cover core (4) corresponding to the other window (14a).

A nonvolatile semiconductor memory concerning an example of the present invention comprises a cell array, a plurality of conducting wires extending from the cell array to a lead area, and a plurality of contact holes to arranged in the lead area so that a distance from the end of the cell array sequentially increases from one to the other of the plurality of conducting wires, each of the plurality of conducting wires having a first conducting wire portion having a first conducting wire width, a second conducting wire portion connected to the contact hole and having a second conducting wire width smaller than the first conducting wire width, and a third conducting wire portion electrically connecting the first conducting wire portion to the second conducting wire portion.

The invention discloses a radar/infrared two-waveband frequency selective surface which solves the technical problems that a latticed metal mesh FSS in the prior art cannot further improve optical transmittance, the distribution of stray light is centralized, and the application in high-precision detection and imaging observation is not facilitated, and belongs to the technical field of electromagnetic shielding. The radar/infrared two-waveband FSS is a cross-hole-shaped periodic array on a metal mesh, the metal mesh is a round-hole-shaped metal mesh or a hexagonal metal mesh, the periods of cross hole shapes are the integer multiples of the period of the metal mesh, and each cross hole shape meets the two following constraint conditions that the slit width of the cross hole shapes is the integer multiples of the period of the metal mesh minus the wire width of the metal mesh; the difference between the slit length of the cross hole shapes and the slit width of the cross hole shapes is the even times of the period of the metal mesh. The radar/infrared two-waveband FSS is higher in optical transmittance, more even in diffraction light distribution and capable of effectively restraining the stray light.

When a first floor (11) which is formed of a punching plate or the like and through which air passes is provided immediately below an arm (17) at a middle height part of a conveying robot (10) in a casing (2a) of a clean transfer device (2) and a degree of opening of a casing bottom part frame (2b), which supports a base part of the conveying robot (10), with respect to the outside is restricted, a class 1 can be maintained. Here, when a second floor (13) formed of a punching plate or the like is used on the casing bottom part frame (2b), a class 0 state can be realized under specific conditions, thereby enabling production of a semiconductor having a wire width of 0.1 μm. As a result, the device can cope with the unexpectedly high degree of cleanliness of 0.1 μm particle class 1, which cannot be realized in the prior art, requested also for the transfer device according to a reduction in wire width on a highly integrated semiconductor wafer.

The invention discloses a fabrication method of a flexible nanowire gate-type transparent conductive electrode. Compared with the prior art, a conductive wire gate structure of the flexible transparent electrode fabricated by the method selectively grows in an electrodeposition process; the minimum wire width can reach dozens of nanometers, but a nanowire gate formed by electrodeposition is relatively high in conductivity, so that a relatively low sheet resistance value can still be ensured even if the width and the thickness of the wire gate are only dozens of nanometers. According to the fabrication method of the flexible transparent electrode disclosed by the invention, a single-function electrode can be fabricated; and a multi-layer composite electrode can be fabricated by depositing different material layers on the surface of a nano transfer mold through multiple transferring processes, or the transparent electrode with different conductive function regions can be fabricated.

The invention discloses an electroluminescent display panel, which comprises a blue electroluminescent element, a red electroluminescent element, a green electroluminescent element, a first power line electrically connected with the blue electroluminescent element, a second power line electrically connected with the red electroluminescent element, and a third power line electrically connected with the green electroluminescent element. The first power line has a first wire width, the second power line has a second wire width, the third power line has a third wire width, wherein the first wire width is greater than the second wire width, and the first wire width is greater than the third wire width. The invention also discloses a pixel structure of the electroluminescent display panel.

Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.