Fabrication method of flexible nanowire gate-type transparent conductive electrode

A technology of transparent conductive electrodes and nano-wire grids, which is used in the manufacture of semiconductor/solid-state devices, circuits, electrical components, etc., can solve the problems of high cost, complex manufacturing process, and difficulty in realizing nano-scale wire grid networks, and achieve low square resistance. value, the effect of high conductivity

Active Publication Date: 2016-03-16
SUZHOU UNIV +1
View PDF2 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of this, what the present invention aims to solve is the problem that the manufacturing process of the wire grid type transparent conductive electrode in ...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of flexible nanowire gate-type transparent conductive electrode
  • Fabrication method of flexible nanowire gate-type transparent conductive electrode
  • Fabrication method of flexible nanowire gate-type transparent conductive electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0052] like Figure 1 to Figure 7 As shown, a manufacturing method of a flexible nanowire grid type transparent conductive electrode includes the following steps:

[0053] The first step, making micro-nano wire grid type (line width 50nm-1um) trenches: making micro-nano wire grid type network trenches on flexible metal substrates or metallized flexible substrates;

[0054] The second step is to grow a conductive material layer inside...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Line widthaaaaaaaaaa
Groove depthaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a fabrication method of a flexible nanowire gate-type transparent conductive electrode. Compared with the prior art, a conductive wire gate structure of the flexible transparent electrode fabricated by the method selectively grows in an electrodeposition process; the minimum wire width can reach dozens of nanometers, but a nanowire gate formed by electrodeposition is relatively high in conductivity, so that a relatively low sheet resistance value can still be ensured even if the width and the thickness of the wire gate are only dozens of nanometers. According to the fabrication method of the flexible transparent electrode disclosed by the invention, a single-function electrode can be fabricated; and a multi-layer composite electrode can be fabricated by depositing different material layers on the surface of a nano transfer mold through multiple transferring processes, or the transparent electrode with different conductive function regions can be fabricated.

Description

technical field [0001] The invention belongs to the field of flexible electronic manufacturing, relates to a nano transfer printing technology and an electrodeposition process, and is suitable for large-format and low-cost production of a flexible nano wire grid type transparent electrode. Background technique [0002] With the development of a new round of flexible printed electronics technology in the world, the circuit line width is getting thinner and thinner, which puts forward higher requirements for printed electronic materials and application technologies. As the core of flexible electronics manufacturing, organic thin-film transistors (OTFTs) require that the channel length between source and drain circuits be at least less than 5um, or even reach nanoscale precision, in order to obtain sufficient driving current and switching speed. At the same time, flexible electronic systems are generally connected by electronic components distributed on rigid microcellular isla...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/28H01L21/283H01L29/423
CPCH01L21/28H01L21/283H01L29/423
Inventor 刘艳花陈林森浦东林王艳艳朱鹏飞周小红方宗豹
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap