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Fabrication method of flexible nanowire gate-type transparent conductive electrode

A technology of transparent conductive electrodes and nano-wire grids, which is used in the manufacture of semiconductor/solid-state devices, circuits, electrical components, etc., can solve the problems of high cost, complex manufacturing process, and difficulty in realizing nano-scale wire grid networks, and achieve low square resistance. value, the effect of high conductivity

Active Publication Date: 2016-03-16
SUZHOU UNIV +1
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Problems solved by technology

[0008] In view of this, what the present invention aims to solve is the problem that the manufacturing process of the wire grid type transparent conductive electrode in the prior art is complicated, the cost is high, and it is difficult to realize the nanoscale wire grid network. Fabrication method of flexible transparent conductive electrode

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  • Fabrication method of flexible nanowire gate-type transparent conductive electrode
  • Fabrication method of flexible nanowire gate-type transparent conductive electrode
  • Fabrication method of flexible nanowire gate-type transparent conductive electrode

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Embodiment Construction

[0051] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0052] like Figure 1 to Figure 7 As shown, a manufacturing method of a flexible nanowire grid type transparent conductive electrode includes the following steps:

[0053] The first step, making micro-nano wire grid type (line width 50nm-1um) trenches: making micro-nano wire grid type network trenches on flexible metal substrates or metallized flexible substrates;

[0054] The second step is to grow a conductive material layer inside...

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Abstract

The invention discloses a fabrication method of a flexible nanowire gate-type transparent conductive electrode. Compared with the prior art, a conductive wire gate structure of the flexible transparent electrode fabricated by the method selectively grows in an electrodeposition process; the minimum wire width can reach dozens of nanometers, but a nanowire gate formed by electrodeposition is relatively high in conductivity, so that a relatively low sheet resistance value can still be ensured even if the width and the thickness of the wire gate are only dozens of nanometers. According to the fabrication method of the flexible transparent electrode disclosed by the invention, a single-function electrode can be fabricated; and a multi-layer composite electrode can be fabricated by depositing different material layers on the surface of a nano transfer mold through multiple transferring processes, or the transparent electrode with different conductive function regions can be fabricated.

Description

technical field [0001] The invention belongs to the field of flexible electronic manufacturing, relates to a nano transfer printing technology and an electrodeposition process, and is suitable for large-format and low-cost production of a flexible nano wire grid type transparent electrode. Background technique [0002] With the development of a new round of flexible printed electronics technology in the world, the circuit line width is getting thinner and thinner, which puts forward higher requirements for printed electronic materials and application technologies. As the core of flexible electronics manufacturing, organic thin-film transistors (OTFTs) require that the channel length between source and drain circuits be at least less than 5um, or even reach nanoscale precision, in order to obtain sufficient driving current and switching speed. At the same time, flexible electronic systems are generally connected by electronic components distributed on rigid microcellular isla...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/283H01L29/423
CPCH01L21/28H01L21/283H01L29/423
Inventor 刘艳花陈林森浦东林王艳艳朱鹏飞周小红方宗豹
Owner SUZHOU UNIV
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