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Preparation method of flexible copper electrode pattern in micron level wire width

A copper electrode, micron-scale technology, applied in the field of microelectronic materials, can solve the problems of affecting contrast, slow wiring speed, and diffusion, etc., and achieve the effects of tolerance to repeated folding, long service life, and good conductivity

Inactive Publication Date: 2012-04-04
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages of this process are: the bonding force between the Cu electrode and the plastic substrate is weak, a seed layer needs to be sputtered on the substrate in advance, and the wiring speed is slow, which is not suitable for large-scale production
The disadvantages are: the conductive ink material is not easy to prepare, the ink droplets will spread when they are sputtered to the substrate, the influence of satellite droplets cannot be eliminated, and the nozzle cannot be reduced indefinitely, so that the electrode line width is at the level of 5 μm
The disadvantage of this method is that the diffusion of the ink material during printing will affect the contrast and make the printed graphics wider
[0006] The development direction of flexible electrode graphics lies in the full additive method, and the line width is currently at the level of 5 μm, which is far behind the copper interconnection technology of integrated circuits.

Method used

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  • Preparation method of flexible copper electrode pattern in micron level wire width

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Rinse the polyethylene terephthalate substrate with deionized water, ethanol, and acetone, dry it, place it in a 0.01% ethanol solution of 3-mercaptopropyltrimethoxysilane, and soak it for 4 hours , taken out, rinsed with ethanol, and dried to obtain a surface-modified plastic substrate.

[0024] The modified substrate was placed under a photomask and irradiated with ultraviolet light with a wavelength of 254 nm for 10 minutes.

[0025] Dissolve 1 g of palladium chloride, 5 g of hydrochloric acid, 5 g of trisodium citrate, and 1 g of potassium borohydride in 500 mL of deionized water. After the dissolution is complete, add deionized water until the volume of the solution is 1 L to obtain a catalytic activation solution.

[0026] Place the irradiated substrate in the above solution for 12 hours, take it out, wash it, and dry it.

[0027] Dissolve 7g of copper sulfate, 30g of sodium potassium tartrate, 4g of sodium hydroxide, 2g of sodium carbonate, 1g of nickel chloride...

Embodiment 2

[0030] Rinse the polyimide substrate with deionized water, ethanol, and acetone, dry it, place it in a methanol solution of 0.01% 3-aminopropyltrimethoxysilane, soak it for 2 hours, take it out, and wash it with methanol Rinse and dry to obtain a surface-modified plastic substrate.

[0031] The modified substrate was placed under a photomask and irradiated with ultraviolet light with a wavelength of 365 nm for 30 minutes.

[0032] Dissolve 0.1 g of palladium chloride, 1 g of hydrochloric acid, 1 g of trisodium citrate, and 0.5 g of potassium borohydride in 500 mL of deionized water. After the dissolution is completed, add deionized water until the volume of the solution is 1 L to obtain a catalytic activation solution.

[0033] Place the irradiated substrate in the above solution for 8 hours, take it out, wash it, and dry it.

[0034] Dissolve 10g of copper sulfate, 40g of sodium potassium tartrate, 6g of sodium hydroxide, 3g of sodium carbonate, 2g of nickel chloride, and 8g...

Embodiment 3

[0037] Rinse the polymethyl methacrylate substrate with deionized water and ethanol, dry it, place it in a solution of 5% 3-aminopropyltriethoxysilane in isopropanol, soak it for 2 hours, take it out , washed with isopropanol, and dried to obtain a surface-modified plastic substrate.

[0038] The modified substrate was placed under a photomask and irradiated with ultraviolet light with a wavelength of 365 nm for 20 minutes.

[0039] Dissolve 0.5 g of palladium chloride, 2 g of hydrochloric acid, 3 g of trisodium citrate, and 0.8 g of potassium borohydride in 500 mL of deionized water. After the dissolution is completed, add deionized water until the volume of the solution is 1 L to obtain a catalytic activation solution.

[0040] Place the irradiated substrate in the above solution for 10 hours, take it out, wash it, and dry it.

[0041] Dissolve 8g of copper sulfate, 37g of sodium potassium tartrate, 5g of sodium hydroxide, 2g of sodium carbonate, 1g of nickel chloride, and ...

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Abstract

The invention belongs to the field of microelectronic material, and relates to a preparation method of a flexible copper electrode pattern in a micron level wire width. The preparation method provided by the invention is a ''whole addition'' method, which means that metal copper only precipitates on a predetermined position on a plastic substrate. A specific process comprises steps of plastic substrate cleaning, drying, surface modification, ultraviolet irradiation under a photomask and chemical coppering, etc. The flexible copper electrode pattern prepared by the invention has the following advantages that (1) precision of the electrode pattern is determined by the photomask to reach a micron level wire width; (2) most of the process is carried out in solution, so the process does not require large-scale apparatus equipment and rigorous environment of anultraclean chamber and is suitable for low cost and large scale production; (3) the electrode pattern and the plastic substrate are firmly bonded, can stand repeat folding and have long service life and high reliability; (4) the electrode pattern has good conductivity and is beneficial for reducing energy consumption during usage. The flexible copper electrode pattern prepared by the invention can be widely applied to industrial fields of flexible transistor, flexible solar cell and flexible luminescent device, etc.

Description

technical field [0001] The invention belongs to the technical field of microelectronic materials, and in particular relates to a method for preparing a flexible copper electrode pattern with micron-level line width. Background technique [0002] The production of metal electrode patterns is the key to the practicality of flexible devices. The process includes three methods: subtractive method, semi-additive method and full-additive method (Numakura Kenshi, translated by Ma Mingcheng, High Density Flexible Printed Circuit Board. China Printed Circuit Industry Association CPCA Printed Circuit Information Journal, 2007.Yousef H, Hjort K, Lindeberg M.Journal of Micromechanics and Microengineering, 2008, 18(1), 017001.). [0003] The subtractive method is also called the copper foil etching method. The manufacturing process is complex and involves many processes. It consumes a lot of water, electricity, copper and chemical materials, and causes serious environmental pollution. T...

Claims

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Application Information

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IPC IPC(8): C23C18/06C23C18/38C23C18/30C23C18/20
Inventor 吕银祥薛龙龙粱倩
Owner FUDAN UNIV
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