5results about How to "Increase line width" patented technology

The invention discloses a Rydberg atomic electric field measurement enhancement device based on a cavity enhancement technology, which belongs to the technical field of quantum measurement and comprises an atomic gas chamber with a resonant structure. A first spectroscope, a second spectroscope, a third spectroscope, a detection laser, a photoelectric detector, a polarization splitting prism and a coupling laser are arranged outside the atomic gas chamber; through the arrangement of the resonant structure, the sensing of the Rydberg atoms to the extremely-small microwave signals is enhanced, the measurement of the extremely-small microwave signals is realized, and the sensitivity of Rydberg atom measurement is improved; through the arrangement of a plurality of spectroscopes and other components, the intensity of light entering the atom gas chamber is increased, the interaction between detection laser and atoms is enhanced, the cyclic reflection of transmission light in the atom gas chamber is enhanced, and the measurement accuracy of the Rydberg atom microwave electric field is improved.

The application discloses a kind of graphene oxide-based ink and passive inertia slide control-based multi-modal circuit and manufacturing method, belong to flexible electronics and printed electronics preparation technical field.The ink is composed of graphene oxide aqueous solution, anhydrous ethanol and propylene carbonate, and can realize stable liquid bridge and continuous deposition in micro-gap direct writing.The manufacturing method is first pretreated to flexible matrix, then under the passive conditions of no air pressure, no screw extrusion, no injection pump and no external electric field, inertia slide control direct writing is carried out using the direct writing device equipped with the ink, and the relative motion of flat nozzle needle and matrix forms controllable inertia slip deposition, and the circuit pattern is obtained.Subsequently, the pattern is reduced by region ultraviolet light, so that different regions show differential conductivity, and finally a multi-modal circuit is prepared.The equipment and process flow of the application are simple, the forming resolution is high, and the line width uniformity is excellent.

A display device and a display panel are disclosed. The display device may include: a substrate defining a plurality of sub-pixels; a thin-film transistor disposed on the substrate; a planarization layer disposed on the thin-film transistor; an organic light-emitting diode disposed on the planarization layer corresponding to each of the plurality of sub-pixels; an encapsulation layer disposed on the organic light-emitting diode; a touch sensor layer; a touch protection layer disposed on the touch sensor layer; a black matrix disposed on the touch protection layer between adjacent sub-pixels; and a plurality of color filters disposed on the touch protection layer corresponding to each of the plurality of sub-pixels.

The utility model relates to a quantum dot display element structure. A quantum dot light-emitting layer is arranged between a first electrode layer on a first substrate and a second electrode layer on a second substrate; a first insulating layer on the first substrate comprises a plurality of structural units spaced by a spacer region, and the spacer region exposes the first electrode layer; a first layer auxiliary circuit arranged between the first insulating layer and the first electrode layer, connected with the first electrode layer and surrounding the plurality of structural units; a second insulating layer on the first insulating layer is provided with a second opening and a second-layer auxiliary circuit, the second opening is communicated with the interval area, and the second-layer auxiliary circuit surrounds the interval area. The quantum dot display element structure arranged in multiple layers allows wider wiring, so that the brightness and the uniformity of quantum dots generated by the quantum dot light-emitting layer are improved.

The utility model discloses a grid line structure for preventing the edge of a photovoltaic cell from blackening, and the grid line structure comprises an ejector pin contact grid line structure which is composed of a plurality of first thin grid lines which are arranged in parallel; the main grid line structure comprises a plurality of fine grid lines II which are arranged in parallel and a plurality of main grid lines which are arranged in parallel, and the fine grid lines II and the main grid lines are vertically arranged; and the main grid line is connected with the fine grid line I and the fine grid line II. The grid line structure of the battery piece is locally optimized, and the contact surface between the battery piece and the track ejector pin is optimized, so that the EL badness is reduced, and the yield and the efficiency are improved. Theoretically, by increasing the contact area by 10%-200% at the edge part (corresponding to the thimble contact area) of the grid line structure, the problem of blackening caused by uneven temperature can be solved by increasing the line width or the line number and reducing the grid line spacing or interval space of the thimble contact area; and therefore, the yield of the battery piece is improved by 1%-2%, and the efficiency is improved by 0.03%-0.05%.