235results about How to "Increase line width" patented technology

A circuit layout methology is provided for eliminating the extra processing time and file-space requirements associated with the optical proximity correction (OPC) of a VLSI design. The methodology starts with the design rules for a given manufacturing technology and establishes a new set of layer-specific grid values. A layout obeying these new grid requirements leads to a significant reduction in data preparation time, cost, and file size. A layout-migration tool can be used to modify an existing layout in order to enforce the new grid requirements.

In an image display device incorporating a touch sensor capable of detecting coordinates with simple structure and high precision, a transparent conductive film on a substrate SUB forming a display screen of the image display device is patterned to form detection electrodes taking the shape of a plurality of pad electrodes SSP arranged in a two-dimensional matrix form of rows (X direction) and columns (Y direction). Row connection electrodes LNL and column connection electrodes LNC connecting the detection electrodes in rows and columns of the two-dimensional matrix to each other are formed of the same transparent conductive film as the pad electrodes. By arranging the pad electrodes in the matrix form, the contact area of a finger or the like touching the screen can be made large, resulting in improved detection precision (resolution). The pad electrodes are connected at four corners to coordinate detection terminals PDT1 to PDT4.

CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration.

A method for fabricating a vertical nitride read-only memory (NROM) cell. A substrate having at least one trench is provided. A spacer is formed over the sidewall of the trench. Subsequently, ion implantation is performed on the substrate using the spacer as a mask to form doping areas as bit lines in the substrate near its surface and the bottom of the trench. Bit line oxides are formed over each of the doping areas. After the spacer is removed, a conformable insulating layer as gate dielectric is deposited on the sidewall of the trench and the surface of the bit line oxide. Finally, a conductive layer as a word line is deposited over the insulating layer and fills in the trench.

The invention provides an optical fiber sensing system based on a phase-shifted optical fiber grating. The optical fiber sensing system comprises a semiconductor laser light source, a first coupler, the phase-shifted optical fiber grating, a fiber Bragg grating, a second coupler and a wavelength demodulation instrument, wherein the semiconductor laser light source generates a laser with preset wavelength width; the first coupler is used for coupling the laser with the preset wavelength width to the phase-shifted optical fiber grating and coupling a signal laser reflected back by the fiber Bragg grating to the second coupler; a transmission window of the phase-shifted optical fiber grating changes along with change of external physical quantity of the phase-shifted optical fiber grating, and transmitted portions of the laser passing through the phase-shifted optical fiber grating form the signal laser with wavelength narrower than the preset wavelength; the fiber Bragg grating is used for reflecting the signal laser, and the reflected signal laser is transmitted to the first coupler by the aid of the phase-shifted optical fiber grating; the second coupler is used for coupling the signal laser to the wavelength demodulation instrument; and the wavelength demodulation instrument is used for demodulating the signal laser to obtain the external physical quantity of the phase-shifted optical fiber grating. The optical fiber sensing system based on the phase-shifted optical fiber grating does not need a high-resolution spectrograph or a narrow-linewidth tunable laser, so that cost is greatly saved.

To provide a light-emitting device including the plurality of light-emitting elements having a structure in which a light-emitting area is large and defects in patterning of light-emitting elements are suppressed. To provide a lighting device including the light-emitting device. The light-emitting device includes a first wiring provided over a substrate having an insulating surface, an insulating film provided over the first wiring, a second wiring provided over the insulating film, and a light-emitting element unit including a plurality of light-emitting elements provided over the first wiring with the insulating film provided therebetween. The plurality of light-emitting elements each include a first electrode layer having a light-blocking property, a layer containing an organic compound in contact with the first electrode layer, and a second electrode layer having a light-transmitting property in contact with the layer containing an organic compound. The layers containing an organic compound are separated by a separation layer.

An optical transmitter and methods of generating an optical signal having SBS suppression are described. An optical transmitter having SBS suppression according to the present invention includes a signal generator that generates a SBS suppression signal. A laser generates a line width broadened optical signal having AM noise. A signal processor generates a modified SBS suppression signal from the SBS suppression signal. A modulator modulates the line width broadened optical signal having the AM noise with a payload modulation signal and with the modified SBS suppression signal to generate a payload modulated optical signal having SBS suppression and reduced AM noise.

To utilize effectively the panel space of the liquid crystal panel, this invention has provided a wiring structure, in which the seal material and BM are coated in a superposition and the UV light is irradiated from one side of the TFT substrate; this invention has also provided a wiring structure, in which the seal material can still be irradiated by the UV light with high efficiency, meanwhile, the drop of the resistance value of the metal wiring on the TFT substrate can be restricted to a specific range. The solution is: the liquid crystal dropped is sandwiched between the TFT substrate and the CF substrate, meanwhile the liquid crystal panel is formed by adhering the light cured seal material disposed at the peripheral area of two substrates. In the adhering-formed liquid crystal panel, for the wiring portion, which is the portion of wiring disposed on the TFT substrate superposing the light cured seal material, the wiring structure is formed as follows, that is, the region of the seal material is divided into three regions, an adjacent region, a middle region and an outer region. The function of the respective regions must be held, and the resistance of the metal wiring is minimized under the precondition that the respective function is satisfied sufficiently.

A mold is provide which, by using nano-imprinting, enables inexpensive provision of a magnetic recording medium capable of providing signals with a high signal intensity and enabling a high S/N. The method of the mold used in nano-imprinting includes: a transfer process of pressing a parent mold, having a relief pattern, against a resist layer formed on the surface of a substrate, and then releasing the parent mold to transfer the relief pattern to the resist layer; and a relief pattern formation process of exposing a lower substrate in depression portions of the resist in which the relief pattern has been formed by the transfer process, and etching the exposed substrate to form a relief pattern in the substrate, wherein in the relief pattern formation process, side etching of the substrate is performed during substrate etching.

In a semiconductor integrated circuit including a plurality of cells, a supplementary power-supply wire is disposed between a lattice-shaped upper power-supply wire and a lower cell power-supply wire for cases in which power is supplied from the upper power-supply wire to the lower cell power-supply wire. The supplementary power-supply wire and the lower cell power-supply wire are connected by two vias. The supplementary power-supply wire and the upper power-supply wire are connected by a single via. Current from the supplementary power-supply wire is divided by the two vias and then supplied to the lower cell power-supply wire. Therefore, when power is supplied from the upper power-supply wire to the lower cell power-supply wire, current concentration at the connection points of the lower cell power-supply wire to the vias is decreased, thereby reducing wire breaks caused by EM (electro migration).

A thin film transistor array substrate and a method for manufacturing the same are disclosed. The thin film transistor array substrate includes a plurality of gate lines and a plurality of data lines on a substrate, to define pixel regions crossing each other, thin film transistors, each formed at the intersection of the gate lines and the data lines, and including a gate electrode, a source electrode and a drain electrode, common lines, each including a first pattern formed across the data lines, a second pattern formed adjacent to the data lines on both sides in the pixel region and parallel to the data lines, and a third pattern formed adjacent to the gate lines to connect the second pattern disposed on both the sides in the associated one of the pixel regions, and passing below the drain electrode of the thin film transistors and pixel electrodes formed in the pixel regions.

A manufacturing method of self-aligning contact holes comprises the following steps that: a semiconductor substrate is provided; at least two grid electrodes are arranged on the semiconductor substrate; an etching barrier layer is arranged along the surface of the grid electrodes; a medium layer is formed on the etching barrier layer; the top of the medium layer is higher than the top of the grid electrode; a photoresist contact hole pattern is formed on the medium layer and forms a T-shaped opening in the medium layer through etching; the bottom of the opening is arranged between two grid electrodes; the photoresist is removed; the sidewall and the bottom of the opening are cleaned through a wet method; the etching barrier layer on the sidewall and the bottom of the opening is etched and removed. The method can remove or reduce the disadvantages that in the manufacturing method of self-aligning contact holes, the bottom of the contact hole is not opened and the shoulders of the grid electrodes are cut off.

An organic EL display device includes a thin film transistor substrate in which a light-emitting element is provided for each of plural sub-pixels constituting each pixel, a counter substrate provided with a coupled color filter which is a color filter arranged to be extended over plural adjacent sub-pixels and allowing light in one wavelength region to pass through and a light-shielding film which is arranged on a boundary between adjacent color filters to allow lights in different wavelength regions to pass through and shields light, a filler arranged between the thin film transistor substrate and the counter substrate and made of a transparent organic material, and a filler thickness adjustment part which adjusts to cause a thickness of the filler in a region where the light-shielding film is provided to be thinner than a thickness of the filler in a region where the light-emitting element is provided.

A plan for a power network for an integrated circuit device is automatically preparing in two stages. In a first stage, a number of simplified plans are prepared on a global scale, without regard to design rule checking constraints and routing blockages. Next, the simplified plans are evaluated to select a plan that conforms to a user-specified limit for an attribute, such as maximum voltage drop. The selected simplified plan, which identifies a total count of power wires and a width of the power wires, is used in a second stage to prepare a more detailed plan that honors the design rule checking constraints and routing blockages. The detailed plan is evaluated to check for conformance with the user-specified limit on the attribute, and if necessary the detailed plan is changed, e.g. by increasing wire width one or more times, to achieve conformance.

This invention relates to a method that makes the measurement of a trace gas concentration invariant or at least less affected to pressure variations in the gas and atmospheric pressure changes. This method neither requires a pressure sensor nor a pressure calibration routine. Furthermore, the method can be applied to other gas species present in the background gas or to the background gas itself that cross-interfere with the target gas of interest. This allows removing any pressure dependency of cross-interference parameters of other gas species and/or the background gas. The new method for accurately measuring a gas concentration is based on optimizing the wavelength modulation amplitude of the laser to minimum pressure dependency.

A conductive paste is mainly composed of a metal powder, a glass frit, and an organic vehicle. The total content amount of the metal powder and glass frit with respect to the entire conductive paste is 85 wt % or more. The viscosity at a rotational speed of 1 rpm measured at 25° C. with an E type rotating viscometer is 100 Pa·s or more and 400 Pa·s or less.

The invention relates to a manufacturing method for grid side wall, which comprises the following step of: providing a semi-conductor substrate with a grid and forming a dielectric layer on the semi-conductor substrate along the surface of the grid; measuring the thickness of the dielectric layer of the grid side wall and computing the difference between the thickness and the objective thickness of side wall; computing the etching time T according to the difference and the etching rate for the dielectric layer; etching the dielectric layer for the time of T. The method can compensate the variation of thickness of the deposited dielectric layer, thus overcoming the problem of bad uniformity of the carved side wall thickness caused by different thicknesses of the dielectric layer.

The method of forming photoresist pattern includes forming photoresist layer on the substrate, the first time exposure of the photoresist layer with mask; the first development to form the first photoresist pattern; the second time exposure of the first photoresist pattern layer to expose the decompose part of the first photoresist pattern layer and to form exposed decomposed layer; the second development to eliminate the exposed decomposed layer and to form the second positive photoresist pattern layer with pattern size smaller than that of the first photoresist pattern layer.