86 results about "Capacitive effect" patented technology

The invention discloses an automatic identification and expansion communication method based on an RS485 interface, and relates to the technical field of industrial automation communication. The problems that an existing RS485 interface is complex in configuration, poor in protocol compatibility and high in data transmission delay are solved. According to the scheme, the terminal matched resistance and the bias current are adjusted in real time by dynamically measuring the bus equivalent distributed capacitance value, and signal attenuation caused by the capacitance effect is inhibited; a silicon controlled rectifier trigger type charge discharge mechanism is adopted to force bus residual charge to return to zero quickly, and an idle state is accurately judged in combination with a hysteresis comparator; dynamically compensating signal edge distortion and calibrating a sampling window time sequence based on a pre-emphasis filtering and Kalman filtering algorithm; multi-node stable communication is realized through capacitance value driven conflict detection threshold adaptive adjustment and a Poisson back-off model; according to the invention, the real-time performance, the anti-interference capability and the multi-node expansion reliability of RS485 communication in a complex industrial scene are obviously improved, and the debugging and maintenance cost of the system is reduced at the same time.

The invention discloses an insulation detection method for an electric automobile, belongs to the technical field of high-voltage safety monitoring of the electric automobile, and solves the problem that the insulation detection precision is reduced due to electromagnetic interference, impedance fluctuation and capacitive effect coupling in a dynamic load switching process. According to the scheme, a test sequence of discrete frequency points is applied to a high-voltage system; measuring a response current value through a current sensor and calculating a ground distributed capacitance value; connecting a test voltage source between positive and negative electrodes of the high-voltage system through a coupling circuit; applying a first pulse signal during no-load, dynamically setting the width according to the capacitance value, measuring a first response current value, and calculating an initial insulation resistance value; a second pulse signal with the same parameter is applied in the load state window, a second response current value is measured, and differential filtering is carried out in combination with the initial value to eliminate load noise; and comparing the filtered insulation resistance value with a threshold value, and outputting a fault signal when the insulation resistance value is lower than the threshold value. The method is used for monitoring the insulation state of the high-voltage system in real time and accurately early warning faults.

The invention relates to the technical field of flexible electronic sensing, and particularly discloses a composite fiber membrane-based capacitive flexible pressure sensor integrated system and a preparation method thereof. The sensor is composed of a composite fiber membrane sensitive layer, an interlayer type electrode structure, a multi-channel signal acquisition module and an intelligent data processing system. Wherein the composite fiber membrane is prepared through an electrostatic spinning technology, polyvinylidene fluoride serves as a matrix, ionic liquid with the mass ratio of 40%-70% is evenly dispersed, a three-dimensional porous structure is formed, and a pressure signal is converted into capacitance change through the double-electric-layer capacitance effect; the signal acquisition module adopts a high-precision capacitance digital converter to cooperatively work with a microcontroller, 9-channel parallel data acquisition is realized, the resolution reaches 6aF, and data is transmitted through an anti-interference bus protocol; and the data processing system dynamically analyzes the pressure-capacitance relationship based on an exponential function model, suppresses noise to be below 0.1 aF RMS in combination with a filtering algorithm, and synchronously generates a visual pressure distribution map.

The invention relates to an offshore wind power tower tube corrosion detection method and system based on a microprobe technology, and the method comprises the following steps: placing a microprobe corrosion detection device on a to-be-detected offshore wind power tower tube, and setting a probe interval between a signal transmitting probe and a signal receiving probe according to the thickness of an anticorrosive coating of the offshore wind power tower tube and the corrosion condition; in the process that the microprobe corrosion detection device moves on the offshore wind power tower drum to be detected, the signal emission probe emits an alternating current signal according to a preset frequency, and the emitted alternating current signal is propagated by taking the anti-corrosion coating as a medium and penetrates through the coating to enter the main body steel structure; the emitted alternating current signal is transmitted in the main body steel structure and then returns to the signal receiving probe through the anti-corrosion coating; the alternating current signals collected by the signal receiving probe are analyzed, metal resistance and capacitance effect equivalent capacitance values of the main body steel structure in the offshore wind power tower are obtained, and the corrosion conditions of the main body steel structure and the anticorrosive coating of the offshore wind power tower are judged according to the obtained metal resistance and equivalent capacitance values.

The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure comprises a substrate, a plurality of active regions arranged in an interval manner; a plurality of bit lines arranged in an interval manner on the substrate; the bit line comprises a bit line conductive layer and a bit line dielectric layer which are stacked; the bit line has a first part and a second part; the first part is located at the overlapping part of the bit line and the active region, and the second part is located between adjacent active regions; the top surface of the bit line conductive layer of the second part is lower than the top surface of the bit line conductive layer of the first part; and a plurality of bit line contact structures are located between the first part and the active region. The semiconductor structure sets the bit line as the first part which overlaps with the active region and the second part which is located between adjacent active regions, and sets the top surface of the bit line conductive layer of the second part as lower than the top surface of the bit line conductive layer of the first part, so that the relative cross-sectional area of adjacent bit lines is reduced, and the coupling capacitance effect between adjacent bit lines is reduced.

The invention relates to a negative capacitance tunneling field effect transistor and a preparation method thereof, belongs to the technical field of field effect transistors, and solves the technical problems of limited tunneling area and small on-state current of an existing tunneling field effect transistor. The transistor comprises a source region, an intrinsic region, a drain region, a gate oxide layer, a metal gate, a drain electrode, a source electrode and an HfO2 ferroelectric layer. And the lengths of the HfO2 ferroelectric layer and the metal gate are smaller than the length of the gate oxide layer. And the doping type of the intrinsic region is the same as that of the drain region and is opposite to that of the source region. The preparation method comprises the steps of sample wafer pretreatment, photoetching, etching, ion implantation, photoresist removal, activation, implantation and doping, gate oxide layer deposition, HfO2 ferroelectric layer preparation, metal gate preparation, oxide layer removal, and source electrode and drain electrode deposition. The invention is used for the tunneling field effect transistor with the short gate structure based on the negative capacitance effect.

The present invention discloses a novel super junction SGT MOSFET device and a preparation method thereof, belonging to the field of semiconductor technology, comprising a drain contact metal layer and a source contact metal layer, and an N+ type substrate, a super junction region and an isolation oxide layer arranged therebetween, wherein the super junction region comprises a super junction N column region and two lower super junction P column regions, an upper P column region is arranged above the lower super junction P column region, a P well is embedded in the upper P column region, and a source region for N+ ion implantation is embedded in the P well; a deep trench is arranged above the super junction N column region, and a control gate, a shielding gate and a gate oxide layer are arranged in the deep trench. The present invention further reduces the on-resistance, increases the withstand voltage, adjusts the electric field distribution in the drift region, improves the quality of the polysilicon deposited in the control gate, and improves the capacitance effect, and the preparation method provided by the present application simplifies the process steps of the novel super junction SGT MOSFET device and saves the manufacturing cost.

The application discloses a high-frequency ferroelectric negative capacitance field effect transistor and a preparation method thereof, and belongs to the field of field effect transistor logic devices and circuits of CMOS super-large integrated circuits. The high-frequency negative capacitance field effect transistor provided by the application overcomes problems of low working frequency and large hysteresis of a traditional negative capacitance field effect transistor by taking a needle-shaped ferroelectric domain structure ferroelectric film with a fast ferroelectric negative capacitance effect as a gate dielectric layer and combining specific device structures and processes. Compared with similar devices, the product has the outstanding advantages of fast operation speed, small hysteresis and low power consumption, and has important academic and application values in the fields of microelectronic devices, military industry and aerospace.

The invention relates to a power semiconductor technology, in particular to an IGBT device with low switching loss and a preparation method thereof, gate oxide layers are arranged on the inner walls of a first trench and a second trench, the lower parts of the gate oxide layers are filled with virtual trench gates, and the upper parts of the gate oxide layers are filled with effective trench gates, so that a split trench gate structure is formed; the Miller capacitance effect in the switching process of the device is effectively reduced, the coupling effect of voltage change in the starting stage on the grid potential is weakened, the overlapping time of voltage and current in the starting process is shortened, and the starting loss of the device is remarkably reduced; a transport path of carriers in the device is reasonably guided and strengthened by arranging the deep P region, so that the extraction rate of the carriers in the drift region in the turn-off process is increased, the current trailing phenomenon in the turn-off stage is effectively inhibited, the turn-off time is shortened, and the turn-off loss of the device is remarkably reduced.

In aspects, techniques for detecting and discriminating foreign objects near an inductive wireless power transfer system is disclosed. The method is based on hybrid inductive and capacitive sensing. The apparatus includes a sensing system, a measurement circuit, and a controller. The sensing system senses the object based on at least one of an inductive or a capacitive effect. The sensing system includes an inductive sense element, which has an electrical characteristic that changes in a presence of the object based on the inductive effect. The sensing system further includes a capacitive sense element, which has an electrical characteristic that changes in the presence of the object based on the capacitive effect. The measurement circuit measures the electrical characteristics in the inductive and capacitive sense circuits. The controller determines the presence of the object, and discriminates between metallic and non-metallic objects based on the change in the measured electrical characteristics.

The invention relates to the technical field of photovoltaic modules, and discloses an IV test method and device, electronic equipment, a storage medium and a program product, and the method comprises the steps: carrying out the light bath pretreatment of a module, and evaluating the effect through a power stability test; after the standard is reached, forward and backward voltage scanning tests are carried out, the scanning speed is controlled to enable the hysteresis to be lower than a preset threshold value, and the test power is determined to be stable based on a power stability criterion; and then a fill factor and photoelectric conversion efficiency are calculated, and an efficiency true value is evaluated through a weighted average function. Short-term stability is established through preprocessing, and initial fluctuation caused by the capacitance effect is reduced; the power test ensures a reliable starting point; carrying out scanning control and criterion suppression on hysteresis errors; and the weighted average improves the accuracy. The hysteresis error problem caused by the capacitance effect is effectively solved, efficient and accurate testing is achieved, and the testing speed and the result reliability are improved.

The invention relates to the technical field of molecular devices, in particular to a helicene molecule-based capacitance-inductance dual-function device and a preparation method thereof. The device comprises a first graphene point electrode, helicene molecules and a second graphene point electrode, the first graphene point electrode and the second graphene point electrode form a graphene point electrode pair, and the helicene molecules are connected between the graphene point electrode pair; the helicene molecules are switched between a capacitance effect and an inductance effect by changing the voltage change rate of alternating current applied to the helicene molecules; when the voltage change rate of the alternating current is 0.1-1.0 V / s, the helicene molecules have an inductance effect; and when the voltage change rate of the alternating current is greater than or equal to 10V / s, the helicene molecules have a capacitance effect. According to the preparation method provided by the invention, preparation is carried out on the basis of the graphene single-molecule field effect transistor, remarkable miniaturization of the size of the device is realized, and a relatively high integration level is shown.

The present invention provides a miniaturized narrowband bandpass filter transmission line based on artificial surface plasmons, comprising: an SSPP bandpass filter transmission line, a transition structure, and a 50Ω microstrip line. The 50Ω microstrip line is arranged on the SSPP bandpass filter transmission line and connected to the 50Ω microstrip line through the transition structure. The SSPP bandpass filter transmission line is composed of multiple SSPP bandpass filter units. The SSPP bandpass filter units include a floor layer, a dielectric layer, and a transmission layer stacked in sequence from bottom to top. The transmission layer includes: a central conductive strip, a short-circuit branch, and multiple open-circuit branches. The short-circuit branch and the multiple open-circuit branches are arranged on the central conductive strip. The short-circuit branch is provided with a metal through-hole that penetrates the dielectric layer. The short-circuit branch is directly connected to the floor layer through the metal through-hole to form an inductive effect to filter out low-frequency signals, and the short-circuit branch and the floor layer form a capacitive effect to filter out high-frequency signals. At the same time, curved open-circuit branches are provided to enhance the ability to regulate the frequency band and make the lateral size of the transmission layer more miniaturized.

A liquid crystal metasurface unit with fast response and a wide reflection phase regulation range, comprising a top dielectric plate layer, an upper metal layer, a liquid crystal layer, a lower metal layer, a lower dielectric plate layer, and a bottom floor metal layer stacked in sequence from top to bottom; the upper and lower metal layers respectively include a plurality of metal patches and DC bias lines, wherein the metal patches include liquid crystal regulation metal patches, the liquid crystal regulation metal patches of the upper metal layer and the liquid crystal regulation metal patches of the lower metal layer are overlapped up and down, forming a capacitive effect with the middle liquid crystal layer, the DC bias lines are respectively electrically connected to the metal patches, and are used to apply a voltage to regulate the dielectric constant of the liquid crystal layer through the liquid crystal regulation metal patches, and finally change the reflection phase of the metasurface unit; the metal patches form a plurality of resonant phase-shifting structures, and the phase regulation effects of the plurality of resonant phase-shifting structures are superimposed on each other to achieve a wide reflection phase regulation range of the liquid crystal metasurface unit.

The present application discloses a bioelectric signal acquisition electrode and a method for efficient electroencephalogram (EEG) signal acquisition, which relates to the technical field of signal processing. The method includes: Step 1: Based on ion diffusion and capacitance effect, perform dynamic impedance modeling of the electrode-tissue interface; calculate the density distribution of the conductive coupling agent based on the impedance function; Step 2: Calculate the signal quality index; perform signal enhancement according to the signal quality index to obtain an enhanced signal; Step 3: Extract features from the enhanced signal to obtain a feature signal; perform dynamic noise suppression according to the feature signal to obtain a noise suppression result; Step 4: Perform signal reconstruction according to the noise suppression result to obtain a reconstructed signal, and complete the acquisition of the EEG signal. The electrode design of the present invention improves the contact quality, and the distribution of the conductive coupling agent is more uniform, ensuring long-term stable monitoring. At the same time, through the adaptive noise suppression and signal reconstruction mechanisms, the clarity and fidelity of the signal are effectively improved.

The invention provides a nonvolatile radio frequency switch chip for a 5G radio frequency front end. An input port, an input transmission line, a ReRAM core area MIM unit group, an output transmission line and an output port are electrically connected in sequence; and the annular ring surrounds the peripheries of the input transmission line, the ReRAM core area MIM unit group and the output transmission line. The RAM core MIM unit is of a three-layer sandwich structure and comprises a bottom electrode layer, a dielectric layer and a top electrode layer from bottom to top; the bottom electrode and the top electrode are not electrically connected and are completely isolated by the intermediate dielectric layer. According to the invention, the n ReRAM core MIM units are equidistantly arranged in the same direction to form the ReRAM core MIM unit group, the on-resistance of the switch is reduced, the insertion loss is obviously reduced, the gradient ground wire coplanar waveguide transmission line is introduced to reduce the gap capacitance effect, the isolation is improved, and the high-frequency impedance matching is improved.

Method for operating a sensor element (112) for detecting at least one oxygen fraction of an exhaust gas (113) in an exhaust tract, wherein the sensor element (112) comprises at least one pump cell (114) with at least two pump electrodes (118) connected to each other by at least one solid electrolyte (116), wherein the pump electrodes (118) comprise a first pump electrode and a second pump electrode, wherein the first pump electrode is arranged as an inner pump electrode (124) in a cavity of the sensor element (112) and can be exposed to the exhaust gas (113) via a diffusion barrier (121), wherein the second pump electrode is an exhaust air electrode (119) which can be connected to ambient air (125) via an exhaust air duct (123), wherein at least one measured quantity is detected in the method, wherein the measured quantity is a pump current (Ip) between the first and the second electrode, which represents a limiting current, and wherein at least one compensation quantity is determinedwherein the compensation quantity is at least partially dependent on capacitive effects at at least one junction between at least one of the pump electrodes (118) and the solid electrolyte (116), namely a charging current (Δlp) between the first and the second electrode, which is determined by measuring at least one time course of at least one electrical voltage across at least one electrochemical double layer U, dl (t) is determined using the time course of the electrical voltage across the electrochemical double layer U dl (t) and at least one electrode capacitance C IPE using the formula Δ I p = ∂ Q ∂ t = CIPE ∂ U dl ∂ t ΔIp where at least one corrected measured quantity (Ip) is obtained from the measured quantity and the compensation quantity. korr ) is determined using the formula IP korr = Ip - ΔIp, where the corrected measured quantity (Ip) korr) the oxygen content in the exhaust gas (113) is determined.

The application discloses a kind of offshore wind power low-frequency AC transmission system main loop topology and parameter design method, system, equipment, medium and program, belong to wind power generation technical field.The method includes obtaining electrical parameters in offshore wind power low-frequency AC transmission system;According to the electrical parameters in offshore wind power low-frequency AC transmission system, design bridge arm reactor in converter main loop topology;According to the bridge arm reactor in converter main loop topology designed, determine the sub-module capacitance value in converter main loop topology, obtain converter main loop topology and parameter design scheme;Converter main loop topology and parameter design scheme are verified, find the optimal converter main loop topology and parameter design scheme, according to converter main loop topology and parameter design scheme, complete the construction of converter main loop topology.The method effectively reduces line capacitance effect, reduces system loss and voltage fluctuation, while reducing sub-module capacitance and overall volume.

The application discloses a low-frequency submarine cable capacitance effect suppression method, device and equipment and a storage medium, and belongs to the technical field of submarine cable power transmission. The method comprises the following steps: establishing a cable simulation model; based on a preset boundary condition, performing single-point interconnection configuration, fastening interconnection configuration and cross interconnection configuration on the cable simulation model respectively; determining performance parameters of each interconnection configuration under different preset frequencies, wherein the performance parameters comprise unit length charging current, shielding layer current distribution, shielding layer ground potential distribution and total loss; under the condition that the shielding layer current accumulation of each interconnection configuration under different preset frequencies satisfies a linear relationship and the simulation model self-checking passes, determining a target interconnection mode according to the performance parameters of each interconnection configuration under different preset frequencies, so as to switch the interconnection mode of the cable to the target interconnection mode. The technical scheme provided by the application can realize optimal management of the capacitance effect and improve the safety of the submarine cable system.

The present invention relates to a method and system for timing-aware filling insertion based on key networks, and to the technical field of integrated circuit design. The present invention takes into account the influence of the coupling capacitance effect on the overall performance of the circuit, extracts the key signal lines that are susceptible to capacitance from the layout, and divides the capacitance buffer area around the key signal lines, and then divides the candidate filling area in the layout in conjunction with the area occupied by the original signal line and the reserved area set aside to comply with the DRC rules, and then divides the candidate filling area in the layout, and calculates the filling priority value through rectangular division, and fills the rectangular area with the largest filling priority value until the layout meets the target density requirement. The present invention can significantly reduce the coupling capacitance generated after virtual filling while ensuring the virtual filling effect, thereby optimizing the performance of the overall circuit.

The application relates to the technical field of molecular devices, in particular to a capacitance-inductance dual-function device based on a helicene molecule and a preparation method thereof. The device comprises a first graphene dot electrode, a helicene molecule and a second graphene dot electrode, the first graphene dot electrode and the second graphene dot electrode form a graphene dot electrode pair, and the helicene molecule is connected between the graphene dot electrode pair; the helicene molecule is switched between capacitance and inductance effects by changing the voltage change rate of alternating current applied to the helicene molecule; when the voltage change rate of the alternating current is 0.1-1.0 V / s, the helicene molecule has inductance effect; when the voltage change rate of the alternating current is greater than or equal to 10 V / s, the helicene molecule has capacitance effect. The preparation method provided by the application is prepared on the basis of a graphene single-molecule field effect transistor, realizes significant miniaturization of the device size, and exhibits high integration.

The invention discloses a photoconductive switch capable of generating a parasitic capacitance effect based on dislocation, a preparation method and a tuning method, and relates to the technical field of semiconductor devices. The preparation method comprises the following steps: preparing a silicon carbide substrate, performing dislocation analysis on the silicon carbide substrate to obtain substrate intervals with different dislocation densities, and partitioning the substrate intervals with different dislocation densities; preparing a composite metal layer on the silicon carbide substrate, and obtaining a positive silicon carbide wafer with a photoconductive switch electrode structure through photoetching, developing, stripping and other processes; and carrying out alloy treatment on the silicon carbide wafer without the non-electrode area to obtain a photoconductive switch, and then scribing the photoconductive switch to obtain a single discrete photoconductive semiconductor device. According to the invention, the substrate dislocation density of the photoconductive switch device is regulated and controlled, and the half-peak width and the frequency spectrum of the output signal of the photoconductive switch are tunable by utilizing the capacitance effect introduced by the dislocation defect.

The application discloses a low-offset comparator for inhibiting sampling signal attenuation, relates to the technical field of analog and mixed signal integrated circuit design, and is used for solving the problems of sampling signal amplitude attenuation caused by input parasitic capacitance and sampling capacitance voltage division of a pre-amplification stage of a comparator in the prior art and deterioration of ADC linearity and dynamic range caused by the problems. The low-offset comparator comprises a sample-and-hold enhancement circuit and a subsequent processing circuit, the sample-and-hold enhancement circuit is connected between a sample-and-hold circuit and the subsequent processing circuit, the subsequent processing circuit comprises a pre-amplification stage with an input transistor pair, the sample-and-hold enhancement circuit comprises an input capacitance neutralization network, the input capacitance neutralization network is connected between a differential input end and a differential output end of the pre-amplification stage, is used for generating a feedback capacitance opposite to inherent gate-drain capacitance effect of the input transistor pair, and thus effectively reduces the input capacitance of the pre-amplification stage at a sampling node of the sample-and-hold circuit.

A construction method of a broadband equivalent circuit model of a transformer comprises the following steps: establishing a T-shaped equivalent circuit model of the transformer to describe the physical characteristics of the transformer under low frequency; a high-frequency equivalent circuit model of the transformer is established by considering the parasitic effect and the capacitance effect of the transformer under high frequency, and the high-frequency equivalent circuit model comprises a resistor, an inductor and a capacitor; constructing a proxy model by using a deep learning method and performing performance optimization on the proxy model; constructing a transformer broadband equivalent circuit model; and comparing the prediction data of the broadband equivalent circuit model with the actual test data of the transformer, and adjusting and optimizing the broadband equivalent circuit model according to a comparison result to enable the broadband equivalent circuit model to reach a preset level.

This invention relates to the field of waveguide gas laser technology, specifically to a method and device for preferentially controlling the electrode electric field to prioritize the lowest-order waveguide mode through coating, comprising the following steps: S1: determining the beam waist position of the laser resonator; S2: preparing an insulating coating on the surface of the waveguide laser electrode plate corresponding to the beam waist position; S3: performing a gradient transition edge treatment on the insulating coating; S4: constructing an impedance matching compensation network at the electrode feed end in the insulating coating region. This invention, by setting an insulating coating, achieves localized reduction of the electric field intensity in the beam waist region; simultaneously, by constructing an impedance matching compensation network, it accurately compensates for the capacitance effect introduced by the coating, and through dynamic monitoring and adjustment, ensures that the standing wave ratio and discharge voltage fluctuations are within a minimal range, guaranteeing effective coupling of RF power and uniform and stable discharge, thereby improving the overall efficiency and reliability of the device.

The present invention discloses a server power supply system and a server, relating to the field of server power supply, and is used to solve the problem of high energy loss in the traditional AC power supply architecture. The power conversion module converts the power supply into high-voltage direct current with a voltage not lower than a preset voltage, and transmits it to the power distribution board of the server through the busbar copper row. As the transmission medium of the high-voltage direct current, the busbar copper row has a low resistance and a high current-carrying capacity, avoiding the additional losses caused by electromagnetic induction and capacitance effect in AC transmission; the high-voltage direct current is directly input to the power distribution board, avoiding multiple conversions in the intermediate links and reducing the energy loss during the conversion process; the power distribution board directly converts the high-voltage direct current into the voltage required by the load, reducing the losses of multi-stage conversion in the traditional architecture. This application improves the power transmission efficiency, reduces the energy loss, and meets the demand for efficient power supply of modern high-computing-power and high-energy-consumption servers.

The invention relates to a miniaturized dielectric filter and a production process thereof, the miniaturized dielectric filter comprises a ceramic filter body and a ceramic cover plate, a plurality of columnar through holes are formed in the ceramic filter body at intervals, columnar through hole conducting layers are arranged on the inner walls of the columnar through holes, and the columnar through hole conducting layers are electrically connected; the ceramic cover plate is assembled at one end of the ceramic filter body in a sealed mode, a plurality of bonding pad assemblies corresponding to the columnar through holes in a one-to-one mode are arranged between the ceramic filter body and the lower end face of the ceramic cover plate, and blind hole cavities communicated with the columnar through holes are formed in the bonding pad assemblies. And a blind hole conductive layer electrically connected with the columnar through hole conductive layer is arranged in the blind hole cavity. The ceramic cover plate is sealed in the ceramic filter body, so that an electromagnetic field is completely wrapped in the ceramic dielectric, a strong electric field area between the resonance disc and the external shielding cover and the discharge risk are eliminated, and meanwhile, an effective capacitance effect can be generated between the blind hole conducting layer and the frequency modulation hole, so that the resonance frequency is reduced, and the miniaturization of the filter is realized.

To provide a signal collection circuit that reduce influence of parasitic capacitance on signal collection and a wearable device.SOLUTION: A signal collection circuit 200 includes a difference amplifier 230, a first electrode 210, a second electrode 220, a first negative capacitance circuit C10, and a second negative capacitance circuit C20. The first electrode is connected to a first input end of a difference amplifier via a first lead wire L1, and the second electrode is connected to a second input end of the difference amplifier via a second lead wire L2. The first negative capacitance circuit is electrically connected to the first lead wire and a ground line, the second negative capacitance circuit is electrically connected to the second lead wire and the ground line, and both circuits have a negative capacitance effect. The signal collection circuit may further include a third negative capacitance circuit C30. The third negative capacitance circuit is electrically connected between the first lead wire and the second lead wire and being connected in parallel to inter-lead parasitic capacitance C3.SELECTED DRAWING: Figure 3

A device for removing formaldehyde using manganese oxide with a synergistic effect of capacitance and triboelectric enhancement belongs to the field of formaldehyde removal technology. Two parallel copper meshes are positioned with a gap between them. Between the upper and lower copper meshes, from top to bottom, are a nylon air filter and a manganese oxide / carbon nanoparticle composite material. The nylon air filter is tightly fitted to the upper copper mesh, and the manganese oxide / carbon nanoparticle composite material is tightly fitted to the lower copper mesh. The two copper meshes are sealed with an insulating frame, forming an integrated formaldehyde purification device. During operation, a power source is connected between the upper and lower copper meshes. This allows the surface of the manganese oxide catalyst to become an electron-rich region, promoting the removal of active substances (0... * This process accelerates the decomposition of intermediate products, thereby improving catalyst efficiency and lifespan.

The application discloses a kind of offshore wind power AC transmission system reactive power compensation scheme determination method and system, comprising: the reactive power demand of offshore wind power AC transmission system based on the operating parameter obtained by offshore wind power AC transmission system, and the capacitance effect coefficient of single-end reactive power compensation scheme and the capacitance effect coefficient of double-end reactive power compensation scheme pre-constructed, respectively calculate the capacitance effect coefficient of wind farm under full load and light load when single-end reactive power compensation scheme and double-end reactive power compensation scheme are used;Based on the capacitance effect coefficient of wind farm under full load and light load, and offshore wind power AC transmission system stability analysis, determine the reactive power compensation scheme of offshore wind farm.The application takes the minimum as target Capacitance effect coefficient, compares the capacitance effect coefficient of offshore wind farm under different reactive power compensation schemes, and considers introducing stability analysis as a constraint condition to verify, determines the optimal offshore wind farm reactive power compensation scheme.