The invention provides a preparation method of a
flash memory device, and the method comprises the steps: carrying out the at least two times of inclined
ion implantation technology on the surface of an isolation structure exposed out of a
peripheral logic region before a
gate oxide layer is prepared, so as to enable the vertex angles (the edge of an active region) of two sides of the isolation structure of the
peripheral logic region to be in complete contact with implanted doped ions, the
ion concentration distribution of the
edge region of the active region is improved, Si vacancies exist in bonds formed by Si-doped ions, and the vacancies are beneficial to the oxidation reaction on a SiO2 / Si interface, so that in the subsequent process of preparing a
gate oxide layer by a high-temperature furnace tube
oxidation process, the yield of the
gate oxide layer is improved. The
growth speed of the gate
oxide layer at the vertex angles of the two sides of the isolation structure is greater than that of the gate
oxide layer on the
substrate surface far away from the vertex angles of the isolation structure, so that the growth of the gate
oxide layer at the edge of the active region is thickened, and the
electric field distribution at the edge of the active region is reduced; therefore, the morphology and contour of the gate oxide layer close to the vertex angles at the two sides of the isolation structure and the TDDB performance of the device are improved.