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63results about How to "High integration" patented technology
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Multiple-Input Multiple-Output Radio Transceiver
InactiveUS20030203743A1Low cost fabricationHigh integrationResonant long antennasModulation transference balanced arrangementsIntegrated circuitTransceiver
Abstract of Disclosure A MIMO radio transceiver to support processing of multiple signals for simultaneous transmission via corresponding ones of a plurality of antennas and to support receive processing of multiple signals detected by corresponding ones of the plurality of antennas. The radio transceiver provides, on a single semiconductor integrated circuit, a receiver circuit or path for each of a plurality of antennas and a transmit circuit or path for each of the plurality of antennas. Each receiver circuit downconverts the RF signal detected by its associated antenna to a baseband signal. Similarly, each transmit path upconverts a baseband signal to be transmitted by an assigned antenna.
Owner:COGNIO
Vertical-type semiconductor devices
ActiveUS20090242966A1Increased operation speedHigh integrationSolid-state devicesSemiconductor/solid-state device manufacturingEngineeringSingle crystal
In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.
Owner:SAMSUNG ELECTRONICS CO LTD
Non-volatile memory device, method of fabricating the same, and semiconductor package including the same
InactiveUS20080277720A1High integrationHigh reliabilityTransistorSemiconductor/solid-state device detailsEngineeringNon-volatile memory
A non-volatile memory device which can be highly-integrated without a decrease in reliability, and a method of fabricating the same, are provided. In the non-volatile memory device, a first doped layer of a first conductivity type is disposed on a substrate. A semiconductor pillar of a second conductivity type opposite to the first conductivity type extends upward from the first doped layer. A first control gate electrode substantially surrounds a first sidewall of the semiconductor pillar. A second control gate electrode substantially surrounds a second sidewall of the semiconductor pillar and is separated from the first control gate electrode. A second doped layer of the first conductivity type is disposed on the semiconductor pillar.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor device
ActiveUS20090026503A1High speedHigh integrationSemiconductor/solid-state device detailsSolid-state devicesCMOSStandard cell
CMOS inverters are included in a standard cell. Power supply lines are electrically connected to CMOS inverters, and include lower layer interconnects and upper layer interconnect. Lower layer interconnects extend along a boundary of standard cells adjacent to each other and on the boundary. Upper layer interconnects are positioned more inside in standard cell than lower layer interconnects, as viewed from a plane. CMOS inverters are electrically connected through upper layer interconnects to lower layer interconnects. Thus, a semiconductor device is obtained that can achieve both higher speeds and higher integration.
Owner:RENESAS ELECTRONICS CORP
Magnetoresistive effect element and method for fabricating the same
InactiveUS20060220084A1High integrationErroneous readingTransistorNanoinformaticsPhysicsMagnetoresistance
Owner:FUJITSU LTD
Semiconductor device fabrication method
InactiveUS20100203670A1High integrationHigh-speedSolid-state devicesSemiconductor/solid-state device manufacturingOhmOhmic contact
A method of fabricating a semiconductor device, comprises steps of forming a common contact hole for a first conductivity-type region and a second conductivity-type region, implanting an impurity in at least one of the first conductivity-type region and the second conductivity-type region, and forming a shared contact plug by filling an electrical conducting material in the contact hole, wherein in the implanting step, an impurity is implanted in at least one of the first conductivity-type region and the second conductivity-type region such that the first conductivity-type region and the shared contact plug are brought into ohmic contact with each other, and the second conductivity-type region and the shared contact plug are brought into ohmic contact with each other.
Owner:CANON KK
Intelligent card combining NFC (Near Field Communication) and 2.4G double frequency band communication and double frequency band communication system
ActiveCN102214317AHigh integrationImprove marketingNear-field transmissionSubstation equipmentRadio frequencyFrequency band
The invention discloses an intelligent card combining NFC and 2.4G double frequency band communication and a double frequency band communication system, which are mainly designed for providing the intelligent card combining NFC and 2.4G double frequency band communication and the double frequency band communication system. The intelligent card comprises a base card, a CPU (Central Processing Unit) processing module, a first radio frequency transceiver circuit, a second radio frequency transceiver circuit, a first antenna and a second antenna which are integrated on the base card, wherein the signal transceiver end of the first radio frequency transceiver circuit is connected with the first antenna; the first antenna is used for transmitting and receiving data information of 13.56MHz frequency band; the signal transceiver end of the second radio frequency transceiver circuit is connected with the second antenna; the second antenna is used for transmitting and receiving data informationof 2.4GHz frequency band; the CPU processing module is respectively connected with the first radio frequency transceiver circuit and the second radio frequency transceiver circuit; the frequency of received or emitted data information is identified; and according to the identification result, a control order is output to control the first radio frequency transceiver circuit or the second radio frequency transceiver circuit to interactively communicate data according to a preset frequency.
Owner:刘健哲
Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film
ActiveUS20130149645A1Reduce in sizeHigh integrationPhotosensitive materialsSemiconductor/solid-state device manufacturingSolventResist
A chemically amplified negative resist composition is provided comprising (A) a resin having a crosslinking group, (B) a crosslinker, (C) a photoacid generator capable of generating an acid upon exposure to light of wavelength 190-500 nm, (D) a solvent, and (E) an isocyanuric acid. The resist composition overcomes the stripping problem that the film is stripped from metal wirings of Cu or Al, electrodes, and SiN substrates.
Owner:SHIN ETSU CHEM IND CO LTD
Semiconductor device and method of fabricating the same
InactiveUS20070077715A1Improve reliabilityHigh integrationSemiconductor/solid-state device manufacturingSemiconductor devicesEngineeringMetal silicide
Example embodiments relate to a semiconductor device and a method of fabricating the same. A dummy pattern may be formed on a semiconductor substrate. Source and drain regions may be formed on the semiconductor substrate at sides of the dummy pattern. A first metal silicide layer may be formed on the source and drain regions. A recess region may be formed in the semiconductor substrate under the dummy pattern. A gate insulating layer and a gate electrode may be formed in the recess region.
Owner:SAMSUNG ELECTRONICS CO LTD
Multifunctional integrated satellite state simulation ground checkout system of space camera
The invention discloses a multifunctional integrated satellite state simulation ground checkout system of a space camera and relates to the field of control systems of space cameras which can be used for solving the problems that the integration level and reliability are poor, and measurement results are inaccurate when a plurality of single detection devices are used for measuring state parameters of the space camera. The multifunctional integrated satellite state simulation ground checkout system comprises an integrated satellite state simulation ground checkout box connected with the space camera, an upper computer control module and a power supply module, wherein the integrated housekeeping simulation ground checkout box consists of a microprocessor module, and a remote control signal processing module, a remote measuring signal processing module, a GPS (Global Positioning System) second pulse signal processing module, a GPS second pulse time code communication module and a remote control and remote measuring communication module which are connected with the microprocessor module, wherein the remote control signal processing module, the remote measuring signal processing module and the GPS second pulse signal processing module are respectively connected with the space camera, and the GPS second pulse time code communication module and the remote control and remote measuring communication module are respectively connected with the upper computer control module. The multifunctional integrated satellite state simulation ground checkout system has the advantages of high integration, diversified functions, convenience in use, high reliability and the like.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Pad structure, pad layout structure, and pad layout method in semiconductor devices
ActiveUS20060255477A1High integrationReduce areaSemiconductor/solid-state device testing/measurementSemiconductor/solid-state device detailsEngineeringSemiconductor
In a layout structure of pads and a structure of pad used for a test or wire bonding of a semiconductor device, a size of at least one or more non-wire bonding pads is relatively small as compared with a size of at least one or more pads to be used for wire bonding of the semiconductor device. In the pad structure, a pad includes a wire bonding region that has an embossed surface for a portion of top metal layer within a determined pad size to improve the bonding process, and a probe tip contact region that does not have the embossed surface for a surface portion of the top metal layer within the determined pad size, so as to reduce wear of probe tip during testing of the device. Pad pitch can thereby be increased within a limited region, and peripheral circuits can be further formed in regions that would have been occupied in a conventional pad formation region. Higher integration of semiconductor devices and reduced wear of probe tip in probing is thereby realized.
Owner:SAMSUNG ELECTRONICS CO LTD
Semiconductor memory device including a global input/output line of a data transfer path and its surrounding circuits
A semiconductor memory device includes an input / output line of a data transfer path and its surrounding circuits, comprising a controller which generates a control signal corresponding to command and address input in read and write operation; and a repeater which selects any one of the plurality of bank groups as the control signal to control data transfer between the selected bank group and an input / output pad.
Owner:SK HYNIX INC
Environmental-protection energy-saving wall plate of modular grass plate grass bundle wood structure
InactiveCN105178500AHigh integrationGood insulation effectConstruction materialThermal insulationWall plate
An environmental-protection energy-saving wall plate of modular grass plate grass bundle wood structure comprises a non-bearing protection decoration fire-proof hanging plate, a water-proof damp-proof breathable roll material layer, a green high-density straw plate for outer buildings, straw bundles, a green high-density straw plate for inner buildings and a fire-proof decoration panel, wherein straw bundles, a wood partition plate, a wood pole and a cross beam form a bearing wood frame wall part; the green high-density straw plate for outer buildings and the water-proof damp-proof breathable roll material layer are nailed on the outer side of the bearing wood frame wall part, the outermost layer is the non-bearing protection decoration fire-proof hanging plate; the green high-density straw plate for inner buildings and the fire-proof decoration panel are nailed on the inner side of the bearing wood frame wall part. The environmental-protection energy-saving wall plate has the following beneficial effects and advantages that the connection piece integration is high, the thermal insulation effect is good, the waste is turned into treasure, the durability is good, the bearing capacity is high, the construction is convenient, the economic effect is good, complicated operation during the construction process is avoided, and the construction cost is greatly reduced.
Owner:SHENYANG JIANZHU UNIVERSITY
Stacked gate flash memory device and method of fabricating the same
ActiveUS7056792B2High integrationEasy to integrateTransistorSolid-state devicesEngineeringElectrical and Electronics engineering
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
Owner:NAN YA TECH
Magnetic random access memory using schottky diode
InactiveUS20030116847A1High integrationHigh equipment integrationTransistorSemiconductor/solid-state device detailsPhysicsSemiconductor
A magnetic random access memory (MRAM) using a schottky diode is disclosed. In order to achieve high integration of the memory device, a word line is formed on a semiconductor substrate without using a connection layer and a stacked structure including an MTJ cell, a semiconductor layer and a bit line is formed on the word line, thereby forming the schottky diode between the MTJ cell and the bit line. As a result, a structure of the device is simplified, and the device may be highly integrated due to repeated stacking.
Owner:SK HYNIX INC
NAND flash memory and reading method thereof
ActiveUS20160163395A1High integrationMiniaturization highRead-only memoriesDigital storageBit lineAudio power amplifier
The disclosure provides a NAND flash memory and a reading method thereof, which may read a negative threshold value of a memory cell without using a negative-voltage-generating circuit. The disclosed NAND flash memory includes a sense amplifier, a bit line selecting circuit and an array having a plurality of NAND string units. The disclosed NAND flash memory includes a ΔV supplying portion element that applies a positive voltage to a source line, a P well formed with a selected memory cell, and a non-selected bit line which is adjacent to a selected bit line, within a predetermined time period, after the selected bit line is pre-charged and during a reading process.
Owner:WINBOND ELECTRONICS CORP
Electro-optical module comprising flexible connection cable and method of making the same
ActiveUS20080069494A1High integrationCircuit optical detailsSemiconductor/solid-state device detailsElectrically conductivePrinted circuit board
An electro-optical module comprising flexible connection cable and aligning capabilities is disclosed. Electro-optical devices may be soldered on a transparent substrate such as glass or a substrate comprising an optical waveguide wherein electrically conductive traces are designed, forming an electro-optical module. When such electro-optical module is inserted and aligned into a printed circuit board, the external part of the substrate, comprising electrically conductive traces and pads, referred to as flex-cable, is bent down toward the mounting plane of the PCB allowing to establish electrical connections between these pads and the PCB. The substrate may be broken along a pre-formed groove, and the external part of the substrate can be removed leaving the flex-cable section in place.
Owner:IBM CORP
Automatic conveying and sorting system for sampling
The invention provides an automatic conveying and sorting system for sampling, comprising an air feeding substation, an air feeding main station, a belt conveying device, a gripping device and a dividing table and an integrated control device; the air feeding substation is connected to the air feeding main station by a closed conveying pipeline; the air feeding main station is connected with the gripping device and the dividing table by the belt conveying device; and the integrated control device is respectively and electrically connected with all the above devices. The system has high integration and high degree of automation.
Owner:WISDRI ENG & RES INC LTD
Bistable piezoelectric-type multi-directional fluid energy collecting device
ActiveCN106253746AHigh integrationFluid energy storage is largePiezoelectric/electrostriction/magnetostriction machinesElectricityEngineering
The invention discloses a bistable piezoelectric-type multi-directional fluid energy collecting device, which comprises a base, wherein the base is of a polyhedral structure; a plurality of diversion shells which are toward different directions are fixed on the base; an outlet surface of a channel in each diversion shell is bonded with the side surfaces of the polyhedral base; two metal sheets are arranged in each diversion shell and are fixed in the vertical surface and the horizontal surface of each diversion shell respectively; flexible piezoelectric films are bonded on the upper surface and the lower surface of each metal sheet respectively; magnetic mass blocks are fixedly arranged at free ends of two metal sheets and on the lower surface of the channel of each diversion shell respectively; and the opposite surfaces of the magnetic mass blocks fixed at the free end of the metal sheet in the vertical surface of each diversion shell, the free end of the metal sheet in the horizontal surface of each diversion shell and on the lower surface of the channel of each diversion shell are the same in polarity. The fluid energy collecting device combines a piezoelectric material with fluid energy for utilization, and has the advantages that a piezoelectric energy collecting device is easy to microminiaturize and integrate, and the fluid energy is high in reserves and renewable.
Owner:HEFEI UNIV OF TECH
Nonvolatile semiconductor memory device
InactiveUS20070241387A1Prevent parasitic bipolar operationHigh integrationSolid-state devicesSemiconductor/solid-state device manufacturingPhysicsImpurity diffusion
An SOI substrate is comprised of a support substrate, a buried insulating layer and a semiconductor layer. A 1poly-type memory cell has a pair of source / drain regions, a floating gate electrode layer, and a control gate impurity diffusion region. An isolation insulating layer extends from a surface of the semiconductor layer to reach the buried insulating layer while surrounding the periphery of the control gate impurity diffusion region thereby to separate a region in which the source / drain regions are formed and the control gate impurity diffusion region from each other. Therefore, a nonvolatile semiconductor can be obtained which can prevent a parasitic bipolar operation and is suitable for higher integration.
Owner:RENESAS TECH CORP
Magnetic random access memory
A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.
Owner:SK HYNIX INC
Integrated TEG (triethylene glycol) dehydration integrated process device and method
PendingCN108977247AHigh integrationLow regeneration energy consumptionGas treatmentDispersed particle separationReboilerProcess engineering
The invention discloses an integrated TEG (triethylene glycol) dehydration integrated process device and method. The device comprises a feed gas filtration separator, a TEG (triethylene glycol) absorption tower and a dry gas / barren solution heat exchanger; a liquid phase outlet at the bottom of the TEG (triethylene glycol) absorption tower is connected to a TEG (triethylene glycol) circulating pump; a pregnant solution outlet of the TEG (triethylene glycol) circulating pump is sequentially connected to a pregnant solution heat exchange coil, a flash tank, a TEG (triethylene glycol) solution filter and a barren / pregnant solution heat exchanger, a barren solution buffer tank and a pregnant solution rectifying column; a flashing steam outlet of the flash tank is connected to a TEG (triethylene glycol) fire tube type reboiler; the pregnant solution rectifying column, the fire tube type reboiler, a barren solution rectifying column and the barren solution buffer tank are connected together;and an outlet of the barren solution buffer tank, the barren / pregnant solution heat exchanger, the TEG (triethylene glycol) circulating pump, a dry gas / barren solution heat exchanger shell pass and aliquid phase inlet at the tower top of the TEG (triethylene glycol) absorption tower are sequentially connected. According to the integrated TEG (triethylene glycol) dehydration integrated process device and method, the process is simpler, highly integrated design is better facilitated, moving is easy, in addition, energy conservation and emission reduction are realized to a great extent, the operation cost is lowered, and the one-time investment is reduced.
Owner:BC P INC CHINA NAT PETROLEUM CORP +1
NAND flash memory and reading method thereof
ActiveUS9564236B2High integrationMiniaturization highRead-only memoriesDigital storageAudio power amplifierPre-charge
The disclosure provides a NAND flash memory and a reading method thereof, which may read a negative threshold value of a memory cell without using a negative-voltage-generating circuit. The disclosed NAND flash memory includes a sense amplifier, a bit line selecting circuit and an array having a plurality of NAND string units. The disclosed NAND flash memory includes a ΔV supplying portion element that applies a positive voltage to a source line, a P well formed with a selected memory cell, and a non-selected bit line which is adjacent to a selected bit line, within a predetermined time period, after the selected bit line is pre-charged and during a reading process.
Owner:WINBOND ELECTRONICS CORP
Semiconductor device and method of fabricating the same
A pad oxide film and a silicon nitride film are formed on a semiconductor substrate. Next, after the patterning of the silicon nitride film, by etching the pad oxide film and the substrate, a first trench is formed in a first region and a second trench is formed in a second region. After that, by performing side etching of the pad oxide film of the first region while protecting the second region with a resist, a gap is formed between the substrate and the silicon nitride film. Subsequently, the inner surfaces of the first and second trenches are oxidized. At this time, a relatively large volume of oxidizing agent (oxygen) is supplied to a top edge portion of the first trench, and the curvature of the corner of the substrate increases.
Owner:FUJITSU SEMICON LTD
Self-reflux tower type efficient water treatment equipment
PendingCN108002497AHigh integrationSmall footprintWater/sewage treatment by centrifugal separationTreatment involving filtrationSmall footprintPrecipitation
The invention relates to the technical field of water treatment, and discloses self-reflux tower type efficient water treatment equipment, which comprises two tower type structures such as a coagulation device and a precipitation filtration device, wherein water to be treated flows cyclically and downwardly along a spiral wing plate on the outer wall of a diversion cylinder from a water inlet pipe, the water flow enters the diversion cylinder from the bottom portion of the diversion cylinder, and performs inner wall cyclic flowing movement through the action of centrifugal force, the water after first precipitation flows upward from a reflux channel and enters an inclined plate assembly, the inclined plate assembly performs second precipitation, the water on the top portion of a shell enters a filtration system from a water discharge pipe, and finally clear water is discharged into a clear water pool from a water outlet pipe. According to the present invention, the self-reflux tower type efficient water treatment equipment has advantages of high integration, small occupation area and high water treatment efficiency.
Owner:上海立源生态工程有限公司
Apparatus for Detecting Nano Particle Having Nano-Gap Electrode
InactiveUS20100282605A1High reliability and regenerationHigh integrationMaterial analysis by optical meansNanosensorsElectricityParticle-size distribution
The present invention relates to a nanoparticle sensor which is capable to identify an existence / nonexistence, a concentration, a size distribution and a component of the nanoparticles using an electrode pair having a separated distance of a nano-gap, in which the nanoparticle sensor includes a unit element configured with a plurality of unit electrodes electrically operated independently from each other and detects the nanoparticles based on the number of the unit electrodes electrically changed due to the nanoparticles captured into the nano-gap. The nanoparticle sensor of the present invention can detect the component, the size, the size distribution and the concentration of the nanoparticles by single measurement, have high reliability and regeneration while reducing a detection time by statistical method via a plurality of electrode pairs having the nano-gap, and detect even very low concentration of nanoparticles.
Owner:KOREA RES INST OF STANDARDS & SCI
Multipurpose surveying and mapping pen
InactiveCN103465696AHigh integrationIncrease versatility and functionalityWriting aidsNib holdersSurveyorEngineering
Owner:HARBIN UNIV OF SCI & TECH
Hybrid filter device and multiplexer
PendingUS20200228094A1Increase in sizeHigh integrationImpedence networksTransmissionInductorResonator
A hybrid filter device (1) includes an acoustic wave device (AD) that includes an acoustic wave resonator and a passive device (PD) that includes an inductor element or an inductor element and a capacitance element. At least one of the acoustic wave device (AD) and the passive device (PD) is mounted on a substrate (20) of the hybrid filter device (1) and the acoustic wave device (AD) and the passive device (PD) are electrically connected to each other. The acoustic wave device (AD) overlaps the passive device (PD) when the hybrid filter device (1) is viewed in a direction perpendicular to one main surface (20a) of the substrate (20).
Owner:MURATA MFG CO LTD
Rotary blowing equipment and method for molten iron desulphurization
Provided are rotary blowing equipment and method for molten iron desulphurization. The rotary blowing equipment comprises a rotating mechanism, a traveling trolley, a U-steel track and a positioning air cylinder, wherein the U-steel track is longitudinally fixed to a metal steel structure framework, the traveling trolley travels in the U-steel track through traveling wheels, a bearing block of the rotating mechanism and a motor are fixed to the traveling trolley, the air cylinder is arranged on the back side of the traveling trolley, one end of the air cylinder is fixed to the metal steel structure framework, and the other end of the air cylinder is connected with the traveling trolley in an abutting mode. Compared with the prior art, the rotary blowing equipment and method for molten iron desulphurization have the beneficial effects that the degree of integration is higher, and the occupied space is small; the power condition is good, and the equipment is stable in use and free of shaking; molten iron is stirred evenly, desulfuration is conducted efficiently, the production efficiency is high, consumption of desulphurization powder is low, and the production cost is reduced; and the technical conditions of smelting of pure steel can be met.
Owner:鞍山市和丰耐火材料有限公司
Programmable asynchronous triggering time delayer, and method of use
InactiveCN1797948ASimple circuit structureHigh integrationSingle output arrangementsEngineeringGate control
The invention includes following parts and structures: triggering delayer includes several pieces of Tíõtrigger connected to each other one by one in sequence; output end of the previous Tíõtrigger is connected to CLK end of the next Tíõtrigger; CLK end of first Tíõtrigger is connected to external clock pulse; output end of the last Tíõtrigger is the output end of the delayed signal. Method of use is as following: setting up RST end and SET end of each trigger according to delay time, and then disabling two pieces of input end; inputting fixed clock pulse. Using the output of final trigger as delayed output signal, the invention simplifies structure of circuit, and solves the issue that additional gate control circuit is needed in general asynchronous trigger. Features are: easy of changing or controlling delayed time, and suitable to instance of large delayed time needed.
Owner:科圆半导体(上海)有限公司
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