Mask graph, method for manufacturing mask, and method for correcting mask graph

A manufacturing method and reticle technology, which is applied in the field of mask layout correction and mask layout, can solve the problem that the key dimension of the product deviates from the expected size, and achieve the effects of saving manpower and time, reducing the gap, and simplifying the correction steps

Active Publication Date: 2011-06-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
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Problems solved by technology

[0006] The technical problem solved by the invention is that the key dimension of the product deviates from the expected dimension due to the exposure distortion in the mask making process, and it needs to be corrected through the process of repeated exposure, measurement, comparison and adjustment

Method used

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  • Mask graph, method for manufacturing mask, and method for correcting mask graph
  • Mask graph, method for manufacturing mask, and method for correcting mask graph
  • Mask graph, method for manufacturing mask, and method for correcting mask graph

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Embodiment Construction

[0022] After a long period of practical experience, the inventor proposed a mask manufacturing method, constructing an auxiliary pattern based on the design pattern, the exposure result of the auxiliary pattern compensates the exposure result of the design pattern, and based on the auxiliary pattern A reticle and a mask layout correction method are provided with the design pattern, so that when the reticle is used for exposure, a product whose critical dimension is closer to the desired size can be obtained, and the design pattern can be realized more effectively. transfer. The invention reduces or even avoids the correction process of repeated measurement, comparison and debugging of the actual product due to the exposure distortion of the design pattern, saves a lot of time and manpower, improves production efficiency, and saves production cost.

[0023] The implementation of the present invention will be further described below in conjunction with specific embodiments and a...

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Abstract

The invention relates to a mask graph, a method for manufacturing a mask, and a method for correcting the mask graph. The mask graph comprises a design graph for forming a product graph according to an exposure and development process, and an auxiliary graph of which the size does not exceed exposure resolution, wherein an area for compensating the exposure loss of the design graph is formed in the auxiliary graph after the auxiliary graph is exposed. By setting the auxiliary graph, the exposure distortion of the design graph is effectively compensated, so that the critical size of the obtained product is increasingly close to the expected size, a large amount of time and energy for comparing and debugging are saved, production efficiency is improved, and production cost is saved.

Description

technical field [0001] The invention relates to an optical proximity correction technology, especially a mask layout, a mask manufacturing method and a mask layout correction method. Background technique [0002] With the development of integrated circuits, the design size is getting smaller and smaller. Due to the diffraction and interference of light, in the process of making the reticle, there is a certain deformation and deviation between the pattern of the reticle and the corresponding design pattern, and this deformation and deviation are further projected onto the product through the reticle , thereby affecting the quality of the product and reducing the yield of the product. [0003] The existing mask plate manufacturing method generally includes the following steps: first, the silicon wafer is cleaned to make the surface of the silicon wafer clean and dry, so that it can be well adhered to the photoresist; then, the photoresist is evenly coated Spread on the surfa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/36G03F1/38
Inventor 朴世镇
Owner SEMICON MFG INT (SHANGHAI) CORP
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