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Charge storage structure, manufacturing method thereof and nonvolatile memory structure

A technology of charge storage and manufacturing method, applied in the direction of electric solid devices, circuits, electrical components, etc., can solve the problems of shrinking, lateral etching acceleration of etching process, etc., to achieve the best reliability and avoid the effect of reducing key dimensions

Inactive Publication Date: 2014-12-03
WINBOND ELECTRONICS CORP
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  • Application Information

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Problems solved by technology

However, when there are impurities on the tunneling dielectric layer under the doped charge storage layer, the doped charge storage layer will cover the impurities and form a large number of bump defects.
In addition, si

Method used

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  • Charge storage structure, manufacturing method thereof and nonvolatile memory structure
  • Charge storage structure, manufacturing method thereof and nonvolatile memory structure
  • Charge storage structure, manufacturing method thereof and nonvolatile memory structure

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Embodiment Construction

[0033] Figure 1A to Figure 1D Shown is a flow chart of the fabrication of the charge storage structure according to an embodiment of the present application.

[0034] First, please refer to Figure 1A , forming a dielectric layer 102 on the substrate 100, the dielectric layer 102 can be used as a tunneling dielectric layer. The substrate 100 is, for example, a silicon substrate. The material of the dielectric layer 102 is, for example, silicon oxide. The forming method of the dielectric layer 102 is, for example, a thermal oxidation method.

[0035] Next, please refer to Figure 1B , forming a first undoped charge storage layer 104 on the dielectric layer 102 . The first undoped charge storage layer 104 can be used as a shielding layer, which can be used to isolate the dielectric layer 102 from the subsequently formed doped charge storage layer, so as to prevent the doped charge storage layer from covering the dielectric layer. Impurities on the electrical layer form pro...

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Abstract

The invention discloses a charge storage structure, a manufacturing method thereof and a nonvolatile memory structure. The charge storage structure is arranged on a dielectric layer of a substrate, and a first undoped charge storage layer and a doped charge storage layer. The first undoped charge storage layer is arranged on the dielectric layer. The doped charge storage layer is arranged on the first undoped charge storage layer.

Description

technical field [0001] The present invention relates to a memory element, its manufacturing method and memory structure, and in particular to a charge storage structure, its manufacturing method and non-volatile memory structure. Background technique [0002] Among various memory products, non-volatile memory has the advantages of being able to store, read or erase data multiple times, and the stored data will not disappear after power off, so it has become a personal A memory element widely used in computers and electronic equipment. [0003] A typical non-volatile memory stores charges through a charge storage layer, and by applying a suitable bias voltage to the substrate, control gate layer, source region, and drain region, electrons can be injected into or leave the charge storage layer, So as to achieve the purpose of operating memory. [0004] In general, charge storage layers often use doped charge storage layers with dopants for charge storage. However, when ther...

Claims

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Application Information

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IPC IPC(8): H01L29/49H01L29/788H01L21/28
CPCH01L29/4234H10B43/00
Inventor 邱永汉倪志荣蒋汝平谢荣源
Owner WINBOND ELECTRONICS CORP
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