Method for improving uniformity of pattern critical dimensions in photoetching process

A key dimension, lithography process technology, applied in microlithography exposure equipment, patterned surface photoengraving process, photoengraving process exposure device and other directions, can solve the problem that cannot eliminate the influence of local pattern density on CD changes question

Active Publication Date: 2017-09-01
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] And when CD is getting smaller and smaller, the corresponding k1 is getting smaller and smaller, and the change of CD caused by local pattern density will become larger and larger, the existing two adjustment methods of redundant pattern filling ...

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  • Method for improving uniformity of pattern critical dimensions in photoetching process
  • Method for improving uniformity of pattern critical dimensions in photoetching process
  • Method for improving uniformity of pattern critical dimensions in photoetching process

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Embodiment Construction

[0034] like figure 1 As shown, it is a flow chart of the method of the embodiment of the present invention. The method of improving the uniformity of the key dimension of the pattern in the lithography process according to the embodiment of the present invention includes the following steps:

[0035] Step 1: Measure the influence of various local pattern densities on the key dimensions of the pattern under the corresponding pattern period under various different pattern cycles, and establish a lithography process adjustment rule according to the measurement result; the lithography process adjustment rule It is ensured that the key dimensions of each pattern at different local pattern densities in each pattern cycle tend to be the same as the design requirements after the lithography process is completed, and the influence of different local pattern densities on the key dimensions of the pattern is eliminated.

[0036] In the method of the embodiment of the present invention, e...

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Abstract

The invention discloses a method for improving the uniformity of pattern critical dimensions in a photoetching process. The method comprises the following steps: 1, measuring the influence of various local pattern densities on the pattern critical dimensions in corresponding pattern periods in various pattern periods, and establishing a photoetching process regulation rule according to a measurement result; 2, making local pattern density statistics on local-layer patterns of a designed product layout; 3, regulating photomask critical dimensions corresponding to each pattern of the local-layer patterns according to a local pattern density distribution of the local-layer patterns and the photoetching process regulation rule. According to the method, the influence of changes of the local pattern densities in the layout on the pattern critical dimensions can be eliminated, each pattern critical dimension under the various local pattern densities tend to be the same as a design requirement, and the uniformity of the pattern critical dimensions is improved.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for improving the uniformity of key dimensions of patterns in a photolithography process. Background technique [0002] The resolution limit of the lithography process: P=k1×NA / λ, P is the half cycle of the pattern, that is, the resolution limit, k1 is the lithography process coefficient, NA is the numerical aperture of the exposure equipment, and λ is the wavelength of the exposure light source. [0003] As the critical dimension (CD) of the pattern gets smaller and smaller, approaching the exposure limit or resolution limit, the influence of environmental factors of various non-lithographic processes begins to become larger and larger. The effect becomes more and more obvious when k1<0.4. [0004] Usually, the loading effect caused by the pattern density is considered to have no effect on the lithography process, but when the CD becom...

Claims

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70433G03F7/70441
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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