40results about How to "Reduce read errors" patented technology

The invention discloses a method and a device for reading data. The method comprises the following steps: when a read instruction for reading a target address is received, judging whether data pointed by reading of the target address are cached in a preset cache region; if the data pointed to reading of the target address are cached in the preset cache region, searching a cache address corresponding to the reading of the target address according to a first mapping relation, and reading the data pointed by the cache address from the preset cache region, wherein the first mapping relation is used for recording a corresponding relation between the target address and the cache address; if no data pointed by reading of the target address are cached in a preset cache region, reading the data pointed by reading of the target address from a nonvolatile storage space. By the mode, read data errors caused by write interference can be reduced.

An apparatus, system, and method are disclosed for mitigating signal asymmetry. An analog to digital converter samples an analog signal from a read head and converts the sample to a digital input signal. The digital input signal addresses a look-up module, and the look-up module outputs a modified digital signal. The modified digital signal value is a specified function of the digital input signal value, wherein the specified function is configured to mitigate the asymmetry of the digital input signal. The modified digital signal value may be periodically recalculated to adjust for read head wear.

The invention relates to a method for reading 3D NAND flash memory, the 3D NAND flash memory includes a plurality of memory cells arranged in an array within a three-dimensional space, forming a plurality of memory strings, the transistor at the top of each memory string is an upper select transistor, the upper selection tube is connected to a bit line, the transistor at the bottom of the string is a lower select transistor, a plurality of memory cells located within the same layer form a memory row, the gates of the memory cells located in the same memory row are all connected to the same word line, and the memory string in which the memory cells are to be read is taken as a selected string. The reading method is characterized in that the reading method comprises the steps of a preconduction stage and a reading stage, wherein a continuous precharge voltage is applied to the bit line in the preconduction stage; at the same time, the upper selection tube of the selected string and the upper selection tube of the unselected string are turned on, and the lower selection tube of the selected string and the lower selection tube of the unselected string are turned off.

The invention relates to an unmanned on-duty intelligent settlement channel. The unmanned on-duty intelligent settlement channel includes channels, a front release swing gate, a back release swing gate, face identification cameras, an RFID reader-writer, a card reader, a display screen and an entrance guard device, wherein the face identification cameras include a front face identification cameraand a back face identification camera; the channel bodies of the channels include a front channel body, an intermediate channel body and a back channel body; the RFID reader-writer is arranged on theinner wall of one side plate of the intermediate channel body; the card reader and the display screen are arranged on the upper part of the inner wall of the back channel body in an opposite manner; and the entrance guard device is arranged at the lower part of the inner wall of the side plate at the same side of the card reader. The unmanned on-duty intelligent settlement channel has the advantages of being high in the settlement efficiency, being low in the labor cost, being short in the time for queuing for payment, being high in the payment speed, being good in the shopping experience, guaranteeing that no signal interference exists, greatly reducing the information reading error and repetition of information reading, and being able to realize comprehensive automatic authentication andautomatic settlement and payment.

The invention discloses a data processing method and device, a server and a storage medium, the scheme of the invention is applied to a business service platform, the business service platform runs amaster process and at least one slave process. The method comprises the following steps: obtaining a data processing request sent by a client; under the condition that the data processing request comprises a reading request, determining a first data identifier of data requested to be read by the reading request; if the first data identifier belongs to a data identifier in a cached non-synchronousrecord, forwarding the read request to the master process for processing, the non-synchronous record recording a data identifier corresponding to data which is not synchronized from the master processto the slave process; and if the first data identifier does not belong to the data identifier in the non-synchronous record, forwarding the read request to the slave process for processing. Accordingto the scheme, the data request processing efficiency can be improved, Meanwhile, the situation of data reading errors or abnormalities caused by inconsistency of the master process data and the slave process data can be reduced.

The invention provides an SONOS (silicon oxide nitride oxide silicon) flash memory device and a compiling method thereof. The SONOS flash memory device comprises a substrate of a cylinder structure and a grid electrode which wraps the middle of the substrate, wherein a source terminal and a drain terminal are respectively arranged at two ends of the substrate, the grid electrode comprises a first silicon gate and a second silicon gate which are parallel, a first oxidation layer is arranged between the first silicon gate and the second silicon gate, and a second oxidation layer arranged on the substrate, a silicon nitride layer arranged on the second oxidation layer and used to store electric charges and a third oxidation layer arranged on the silicon nitride layer are sequentially arranged between the second silicon gate and the substrate. The above structure of the SONOS flash memory device can restrain short channel effects and resist threshold voltage drifts, and simultaneously can effectively reduce the critical size of the SONOS flash memory device. The compiling method of the SONOS flash memory device assists in movement of thermion by adjusting voltage of the grid electrode and the drain terminal, provides sufficient oxidation layer crossing energy to complete compiling, improves compiling efficiency of the SONOS flash memory device, and reduces compiling electric current power consumption.

The invention discloses a flash memorizer. The flash memorizer comprises a cylindrical body structure serving as a substrate, wherein the body structure is of an N type silicon structure and comprises a middle portion and two end portions on the two sides of the middle portion, a grid electrode is wrapped on the middle portion in a surrounding mode to form a surrounding grid. The two end portions serve as a source electrode and a drain electrode and respectively comprise a layer of P type doped area. The portion, surrounded by the corresponding P type doped area, of each end portion is led out through a contact line and used for exerting a substrate voltage. A smaller grid length can be obtained, the voltages used for controlling the grid and a floating grid can well control a groove, the percentage of the portion, occupied by a source and drain depletion region through extension, of the total size of the depletion region can be lowered, the short-channel effect can be restrained, threshold voltage drift can be resisted, and reading mistakes of the flash can be reduced.

The invention is suitable for the technical field of storage and provides a selection method and a selection system for physical blocks of a 3D flash memory. The selection method comprises the following steps of confirming whether data can be written in a physical page of a latest physical block corresponding to a logic address of a writing operation instruction or not when the writing operation instruction is received; if the data cannot be written in the physical page, determining a blank physical block with the best performance from a blank physical block group of the 3D flash memory; and writing the data in the blank physical block with the best performance. According to the selection method, the performance of each blank physical block is considered in a data writing process, so that the generation of writing errors and read errors can be reduced, the data correctness can be ensured to the maximum extent, and the workload of ECC (Error Correcting Code) error correction is reduced.

In an optical recording medium, a recording layer is formed by coating a substrate with a solution of coloring matter comprising a coloring matter dissolved in a solvent comprising a mixture of cyclooctane and at least one hydrocarbon having 6 to 9 carbon atoms other than cyclooctane. The obtained optical recording medium enables suppressing the leakage of land prepit signal for address information into RF signal for recorded data at the time of recorded data reproduction, thereby attaining a lowering of error rate.

The invention provides a floating gate flash memory device and a programming method of the floating gate flash memory device. The floating gate flash memory device comprise a substrate of a cylindrical structure, and a source end and a drain end are arranged at the two ends of the substrate; the middle of the substrate is covered with a grid, a gate oxide layer is arranged between the grid and the substrate, and the grid comprises a control gate and a floating gate. According to the programming method of the floating gate flash memory device, movement of hot electrons is assisted by applying bias voltage to provide sufficient energy to cross the gate oxide layer to complete compiling, the compiling efficiency of the flash memory is improved, and power consumption of compiling current is reduced; in addition, the floating gate flash memory device and the programming method of the floating gate flash memory device can effectively reduce the key size of the floating gate flash memory of a parse gate, increase the cell density of a flash memory array and namely increases the storage capacity and density of the flash memory.

The invention is suitable for the technical field of memories and provides a data storage method and a data storage system. The storage method comprises the following steps of directly writing data in a physical page of a latest physical block if the data can be written in the physical page when a writing operation is detected; if the data cannot be written in the physical page, judging the updating frequency of a logic block according to the updating frequency of a physical block chain corresponding to the logic block; and selecting a corresponding blank physical block according to the updating frequency of the logic block, and performing data writing. According to the storage method, the generation of writing errors and read errors can be reduced, the data correctness can be ensured to the maximum extent, and the workload of ECC (Error Correcting Code) error correction is reduced.

The invention provides a multimeter and a resistance and capacitance measuring method. The multimeter comprises a reference source, an analog switch, a buffer and a one-way module and also comprises an FPGA (field programmable gate array), a controllable current source, a protection module, a gear selection circuit, a resistance measurement circuit, a capacitance measurement circuit and a threshold comparator, wherein the protection module comprises an a-way protection circuit and a b-way protection circuit, the controllable current source receives reference signals sent by the reference source and selects actual measurement object gear according to the gear selection circuit, the FPGA controls to produce corresponding current, the current is outwards output through the a-way protection module, and resistance and capacitance are measured by use of the same circuit.

The present invention provides a resistor type random access memory operation method, which comprises: providing a reset voltage pulse to a resistor type random access memory; providing an emulated voltage pulse to the resistor type random access memory; and providing an acknowledgment voltage pulse to the resistor type random access memory, and reading the reset current of the resistor type random access memory when the acknowledgment voltage pulse is provided, wherein the voltage level of the acknowledgment voltage pulse is greater than the voltage level of the provided reading voltage pulse for reading the resistor type random access memory. With the method of the present invention, the confirmation failure during the reading can be reduced, and the reading stability can be increased.

The invention provides a pelvic organ prolapse measuring system. The system comprises: a measuring instrument, wherein the measuring instrument comprises a graduated scale body, and the graduated scale body is axially provided with a limiting groove or a limiting hole; a pull rod, wherein the pull rod is inserted into the limiting groove or the limiting hole; a vernier, wherein the vernier is fixedly arranged at the front end of the pull rod, and when the pull rod is stressed, the pull rod drives the vernier to move axially; a scale identification module, wherein the scale identification module is used for acquiring and identifying a scale image of the measuring instrument; and an operation processing module, wherein the operation processing module is connected to the scale identificationmodule, and transmits the identified image data to the operation processing module through the scale identification module. The system has the advantages that: compared with existing manual recordingmodes, the system is high in automation degree and operation efficiency, great convenience can be brought to work of clinical operators, and reading errors can be reduced.

Methods for forming semiconductor structures and methods of forming magnetic tunnel junction (MTJ) memory cells used in a magneto-resistive random access memory (MRAM) array are provided. A pre-cleanprocess is performed to remove a metal oxide layer that may form on the top surface of the bottom electrodes of MTJ memory cells during the time the bottom electrode can be exposed to air prior to depositing MTJ layers. The pre-clean processes may include a remote plasma process wherein the metal oxide reacts with hydrogen radicals generated in the remote plasma.

The embodiment of the invention discloses a data reading method and device, a memory and a storage medium. The data programming method comprises the steps of obtaining a reading address of data reading; According to the read address, determining an address bit, wherein the address bit is composed of m bits, and m is a positive integer; reading the status bit from the second storage unit corresponding to the read address by using the read voltage corresponding to the N-m bits, Wherein the status bit is composed of N-m bits, the N is a positive integer greater than 2 and the m is a positive integer smaller than N; And combining the address bit and the state bit to obtain second data required to be read.