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A method and system for selecting physical blocks of 3D flash memory

A physical block, 3D technology, applied in the storage field, can solve the problem of not considering the performance parameters of physical blocks, and achieve the effect of reducing workload, reducing write errors, and ensuring correctness

Active Publication Date: 2019-03-08
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method and system for selecting physical blocks of 3D flash memory, aiming to solve the problem that the existing 3D flash memory does not consider the performance parameters of the physical block itself when storing

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  • A method and system for selecting physical blocks of 3D flash memory
  • A method and system for selecting physical blocks of 3D flash memory
  • A method and system for selecting physical blocks of 3D flash memory

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Embodiment Construction

[0032] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0033] See figure 1 , figure 1 It is a schematic flowchart of a method for selecting a physical block of a 3D flash memory provided by the first embodiment of the present invention. It mainly includes the following steps:

[0034] S101. When a write operation instruction is received, confirm whether the physical page of the latest physical block corresponding to the logical address of the write operation instruction can write data.

[0035] That is, when a write operation instruction is received, the data is preferentially written into the physical page of the latest physical block corresponding...

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Abstract

The invention is suitable for the technical field of storage and provides a selection method and a selection system for physical blocks of a 3D flash memory. The selection method comprises the following steps of confirming whether data can be written in a physical page of a latest physical block corresponding to a logic address of a writing operation instruction or not when the writing operation instruction is received; if the data cannot be written in the physical page, determining a blank physical block with the best performance from a blank physical block group of the 3D flash memory; and writing the data in the blank physical block with the best performance. According to the selection method, the performance of each blank physical block is considered in a data writing process, so that the generation of writing errors and read errors can be reduced, the data correctness can be ensured to the maximum extent, and the workload of ECC (Error Correcting Code) error correction is reduced.

Description

Technical field [0001] The invention belongs to the field of storage technology, and in particular relates to a method and system for selecting 3D flash memory physical blocks. Background technique [0002] 2D NAND (flash memory) is a planar structure, while 3D NAND is a three-dimensional structure. The 3D structure is arranged in a vertical semiconductor channel. The multilayer surround gate (GAA) structure forms a multi-gate memory cell transistor, which can effectively reduce Interference between stacks. 3D technology not only improves product performance by at least 20%, but also reduces power consumption by more than 40%. 3D flash memory not only improves the capacity, speed and reliability of the product, but also structurally improves the physical area for storing charges, thereby improving reliability. Therefore, the use of 3D flash memory is increasing. [0003] At present, when using a 3D flash memory for storage, the method for selecting blank physical blocks when wri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/06
CPCG06F12/0646
Inventor 王毅董丽莎张明旭毛睿李荣华廖好
Owner SHENZHEN UNIV
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