A kind of Sonos flash memory device and compiling method thereof

Abstract

The invention provides a SONOS flash memory device and a compiling method. The SONOS flash memory device includes a substrate in a cylindrical structure and a gate covering the middle part of the substrate; the ends on both sides of the substrate are respectively a source end and a drain end. , the gate includes a parallel first silicon gate and a second silicon gate, and a first oxide layer is provided between the first silicon gate and the second silicon gate; wherein, the second silicon gate and the substrate include in turn: A second oxide layer disposed on the substrate, a silicon nitride layer disposed on the second oxide layer for storing charges, and a third oxide layer disposed on the silicon nitride layer. The structure can suppress the short-channel effect, resist threshold voltage drift, and effectively shorten the critical size of the flash memory device. The programming method of the flash memory device in the present invention assists the movement of hot electrons by adjusting the voltage of the gate and the drain, provides enough energy to cross the oxide layer to complete the compilation, improves the compilation efficiency of the flash memory, and reduces the compilation current power consumption.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits and its manufacture, in particular to a SONOS flash memory device and its compiling method. Background technique [0002] With the miniaturization and miniaturization of semiconductor storage devices, the traditional polysilicon second silicon gate storage is difficult to adapt to the development requirements of future storage because of the excessive thickness of the stack and the high requirements on the insulation of the tunnel oxide layer. Recently, SONOS (Polysilicon-Oxide-Nitride-Oxide-Silicon, Silicon-Oxide-Nitride-Oxide-Silicon) non-volatile memory devices based on silicon nitride with excellent insulating properties are known as the first Two-silicon gate memory has stronger charge storage capacity, easy miniaturization and simple process, and has been re-emphasized. [0003] SONOS, the English acronym for Silicon-Oxide-Nitride-Oxide-Silicon, is a non-volatile memory that...

AI Technical Summary

Problems solved by technology

[0006] However, the structure of the flash memory device disclosed in the above-mentioned documents has the following problems: in order to ensure a high channel hot electron generation rate, a high voltage must be applied to the drain terminal, and at the same time, in order to ensure a high hot electron injection efficiency, a high Voltage

Therefore, it is necessary to apply a high voltage to both the drain and the gate, which brings the problems of low channel hot electron injection efficiency and large current power consumption.

Images