304 results about "Silicon silicon" patented technology

The invention relates to a wide-temperature high-precision optical acceleration sensitive chip and sensor based on a microcavity interferometer principle and a manufacturing method thereof, the wide-temperature high-precision optical acceleration sensitive chip comprises a first substrate, a second substrate and a third substrate, an optical fiber mounting seat and a light through hole are formed on the first substrate, a beam structure and an inertial mass block are processed on the second substrate, and the beam structure is arranged on the third substrate. The first substrate, the second substrate and the third substrate are all made of double-polished super-flat silicon wafers, a single-mode optical fiber assembly is fixed to the optical fiber installation base, the end face of the single-mode optical fiber assembly is subjected to precise grinding and is perpendicular to the axial direction of an optical fiber core, and a first cavity mirror is formed by means of the end face of the side, facing the light through hole, of the inertial mass block. A second cavity mirror is formed on the end face of the single-mode optical fiber assembly, the first cavity mirror and the second cavity mirror form an F-P interference cavity, and the first substrate, the second substrate and the third substrate are connected through the silicon-silicon bonding technology.

The invention provides a negative plate and a battery. The negative plate comprises a negative current collector and a coating, and the coating is divided into an inner layer and an outer layer; the inner layer is close to the surface of the negative current collector and the outer layer is away from the surface of the negative current collector; the first negative electrode active substance of the inner layer comprises a silicon-based negative electrode material, and the silicon-based negative electrode material comprises at least one of silicon oxide, silicon carbide, nano silicon and silicon alloy. The second negative electrode active material of the outer layer comprises a carbon negative electrode material, and the carbon negative electrode material comprises at least one of natural graphite, artificial graphite, hard carbon, soft carbon, mesocarbon microbeads and graphene. By adopting the specific double-layer active material layer structure, the performance of the negative electrode is effectively improved, and the energy density and the fast charging performance of the battery are improved. Meanwhile, due to the special multi-layer structural design, the volume expansion effect of the silicon-based negative electrode material can be effectively relieved, the structural stability of the negative electrode is optimized, the structural stability of the negative electrode can be kept for a long time in the charge-discharge cycle, and then the battery performance is optimized.

The invention provides a pressure sensor based on silicon-silicon bonding and a preparation method thereof. The preparation method comprises the following steps: providing a low-resistance silicon wafer, forming a silicon deep hole in a first surface of the low-resistance silicon wafer, and depositing an isolation material in the silicon deep hole to form an isolation ring; etching the first surface to form a shallow groove and a conductive silicon column to obtain a low-resistance cap wafer; providing an SOI wafer, performing ion implantation on the first surface of the SOI wafer to form a resistance region, and obtaining a substrate wafer; bonding the low-resistance cap wafer with the substrate wafer; grinding the second surface of the low-resistance cap wafer until the isolating ring is exposed; depositing an insulating layer on the second surface of the low-resistance cap wafer, and forming a metal electrode on the insulating layer; and forming a back cavity structure on the second surface of the substrate wafer, exposing the top silicon of the SOI wafer, and forming a sensitive film layer. The conductive silicon column is made of low-resistance silicon, copper ion pollution is avoided, the preparation process is simple, and the period is controllable; the device obtained based on the silicon-silicon bonding process has high bonding strength and high air tightness.

The invention provides a negative electrode material and a battery, the negative electrode material comprises a silicon-based active substance and a carbon material located on at least part of the surface of the silicon-based active substance, and the silicon-based active substance comprises silicon, a silicon oxide and a metal M compound; the negative electrode material is subjected to a Lab chromatic aberration test, the brightness L, the red-green color degree a and the yellow-blue color degree b of the negative electrode material are obtained, L is larger than or equal to 15 and smaller than or equal to 35, a is larger than or equal to-2 and smaller than or equal to 5, and b is larger than or equal to-2 and smaller than or equal to 5; in the XRD spectrum of the negative electrode material, the half-peak width of the strongest characteristic peak in the compound of the metal M in the negative electrode material is FWHM (M), the half-peak width of the characteristic peak of the silicon (111) surface is FWHM (Si), and the ratio of FWHM (M) to FWHM (Si) is more than 0.2 and less than 0.8. According to the negative electrode material provided by the invention, the first efficiency and cycling stability of the negative electrode material can be improved, and the expansion efficiency of the negative electrode material is reduced.

A silicon-carbon composite of the present invention comprises a lithium silicon composite oxide and carbon, wherein the lithium silicon composite oxide includes silicon particles, silicon oxide, magnesium silicate, and a lithium silicon compound. By comprising two or more carbon layers including a first carbon layer and a second carbon layer, the silicon-carbon composite can improve the performance of a secondary battery, such as slurry stability and initial charge / discharge characteristics, when used as a negative electrode active material of the secondary battery. In addition, the first carbon layer and the second carbon layer of the silicon-carbon composite satisfy specific thickness ranges, and thus, the silicon-carbon composite can further improve the performance of a secondary battery, such as capacity, cycle characteristics, and initial charge / discharge characteristics, when used as a negative electrode active material of the secondary battery.

The invention provides a monolithic integrated multifunctional composite sensor and a preparation method thereof, a single silicon wafer single-sided bulk silicon micro-manufacturing technology is adopted, a first microgroove of a gas flow sensing unit is pre-defined and covered, a pressure reference cavity and a pressure sensitive diaphragm are firstly formed, and then through protection of the first microgroove and a side wall, the gas flow sensing unit and the pressure reference cavity are combined. A monocrystalline silicon thermocouple arm and a heating resistor pattern are pre-defined, then a pressure sensing unit is protected through a heat insulation medium layer, then a heat insulation cavity and a temperature sensing unit are formed, and finally the gas flow sensing unit, the pressure sensing unit and the temperature sensing unit are integrated on the same single chip. The structure that the heat insulation cavity and the pressure reference cavity are located in the same monocrystalline silicon substrate is achieved. According to the method, the traditional double-sided processing technology is replaced, the problem that the small size of the traditional composite chip is difficult to realize is solved, the complex process caused by the traditional silicon-silicon or silicon-glass bonding structure is avoided, the process difficulty and cost are greatly reduced, the yield of the composite chip is improved, and the reliability of the sensor is improved.

The invention discloses a battery, an electrochemical device and a power utilization device.The battery comprises a battery cell, and the battery cell comprises a pole piece and a pole lug arranged on the pole piece; the lithium ion battery is characterized in that the negative electrode active material layer of the pole piece contains silicon, the percentage content of the silicon in the negative electrode active material layer is b, and the unit is%; the longest distance between the tab and the end part of the pole piece in the length direction is d, the width of the connecting position of the tab and the pole piece is m, and the units of d and m are the same; b, d and m meet the following relation: # imgabs0 #. By comprehensively controlling the value of # imgabs1 #, not only can the battery with relatively high energy density be obtained, but also the battery can be ensured to have relatively good battery fast charging performance.

The invention relates to a method for regulating and controlling atomic scale silicon-silicon and aluminum-aluminum interface thermal conductance. The method comprises the following steps: (1) establishing a silicon-silicon and aluminum-aluminum molecular dynamics thermal transport model consisting of a hot area and a cold area; (2) executing molecular dynamics simulation and data processing: (1) determining a dependency relationship of interface thermal conductivity on a torsion angle; (2) determining the influence of the overlapping area of the phonon state density on heat transport in different interface contact states; (3) revealing the internal reason of the interface contact state influencing the interface thermal conductivity; (4) determining the dependency relationship of the system temperature on the interface thermal conductance; and (5) calculating the overlapping area of the phonon state density, the phonon number and the phonon participation rate at different temperatures to reveal the internal mechanism that the system temperature affects the interface thermal conductivity. According to the invention, research on silicon-silicon and aluminum-aluminum interface heat transport is carried out based on the torsion angle and temperature, and an important basis is provided for understanding an internal mechanism of heat transfer of solid materials with different contact interfaces and searching an effective method for controlling interface heat conduction.

The invention discloses a low-silicon silicon slag intelligent screening process, which belongs to the technical field of silicon slag screening, and comprises the following steps: step 1, carrying out preliminary crushing treatment on silicon slag; 2, the crushed silicon slag is transferred into a screening machine to be screened into large-particle-grade silicon slag, medium-particle-grade silicon slag and small-particle-grade silicon slag; 3, transferring the small-size silicon slag into a tailing surge bin for storage, and transferring the large-size silicon slag into the step 1 for crushing treatment again; and fourthly, the medium-grade silicon slag is transferred into a first-grade sorting machine to be subjected to sorting treatment to obtain first-grade low-silicon alloy and tailings, the tailings are transferred into a tailings buffering bin to be stored, and the first-grade low-silicon alloy is transferred into a second-grade sorting machine to be subjected to sorting treatment to obtain second-grade low-silicon alloy and third-grade low-silicon alloy. According to the process provided by the invention, the low-silicon alloy in the silicon slag and the silicon slag can be quickly and efficiently separated and recycled, the recovery of low-silicon alloy resources in the silicon slag is realized, the enterprise benefit is improved, and meanwhile, the resource waste is reduced.

The invention relates to the technical field of high polymer materials, in particular to self-cleaning organic silicon foam with a micro-nano structure and a super-hydrophobic surface and a preparation method of the self-cleaning organic silicon foam. The surface structure of the release film is customized through one-step molding transfer printing, and a release agent of the release film contains a super-hydrophobic modified organic silicon light diffusion agent. The light diffusant is mainly silicon dioxide or organic silicon resin microspheres modified by surface long-chain silane. The surface structure of the customized release film is an inverted pyramid-shaped micro-nano structure. The organic silicon foam obtained according to the process has the surface micro-nano structure, super-hydrophobic and self-cleaning functions, and is particularly suitable for manufacturing daily and industrial pads such as mouse pads, table mats and placemats.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention provides a dry-method negative pole piece as well as a preparation method and application thereof. The dry-method negative pole piece at least comprises a negative pole current collector, a positive pole piece and a negative pole piece, the dry-method negative electrode active layer is at least arranged on the surface of one side in the thickness direction of the negative electrode current collector, the dry-method negative electrode active layer comprises a negative electrode active material, a conductive agent and a binder, and the uniformity of the binder in the dry-method negative electrode active layer is 85%-96%; the negative electrode active material comprises a silicon material, and the silicon material comprises but is not limited to silicon, a silicon carbon material and a silicon oxygen negative electrode material. According to the dry-method negative pole piece as well as the preparation method and the application thereof provided by the invention, the expansion of the negative active material can be inhibited, and the safety performance can be improved.

A continuous metal on diffusion edge (CMODE) may be used to form a CMODE structure in a semiconductor device after a replacement gate process that is performed to replace the polysilicon dummy gate structures of the semiconductor device with metal gate structures. The CMODE process described herein includes removing a portion of a metal gate structure (as opposed to removing a portion of a polysilicon dummy gate structure) to enable formation of the CMODE structure in a recess left behind by removal of the portion of the metal gate structure.

The invention discloses a fluorescence enhancement measurement system and method based on a silicon carbide silicon vacancy color center dielectric cavity, and the measurement system comprises a confocal system and a dielectric cavity sample, the confocal system comprises a laser, a reflector, a dichroscope, a filter, a scanning galvanometer, a microscope objective, a lens, an optical fiber connector, a single-mode optical fiber, a single-photon detector, a counting card and a computer. The confocal system is used for excitation of a dielectric cavity sample, efficient collection of fluorescence, micron-sized fluorescence space distribution imaging and reading and processing of a fluorescence signal; the dielectric cavity sample is used to generate and enhance fluorescence counts. The invention has the advantages of easiness in assembly and debugging, high sensitivity, wide application range, simplicity in processing, low cost and the like, can improve the fluorescence intensity of the silicon vacancy color center, and is used for high-sensitivity magnetic field measurement and improvement of the performance of a quantum sensing technology.

The invention discloses a far-infrared silicon-based high-transmittance metasurface and a designing and processing method, and relates to the field of micro-nano optical devices. The metasurface is of a layered stacking structure with a hole-type metasurface atom array layer as a center layer, and an upper antireflection film layer, an upper substrate layer, the hole-type metasurface atom array layer, a lower substrate layer and a lower antireflection film layer are sequentially arranged on the metasurface from the incident side to the emergent side. Each of the upper antireflection film layer and the lower antireflection film layer comprises a first antireflection layer and a second antireflection layer which are sequentially arranged from inside to outside; the hole-type super-structure atom array layer, the upper substrate layer and the lower substrate layer are all made of monocrystalline silicon. According to the invention, the equivalent refractive index of the matching interface is designed through the sub-wavelength structure, the reflectivity of the far infrared band of 8-12 [mu] m is improved to 95% or more under the condition of no loss, the process route is simple, and the microstructure units of the surface of the super-structure are packaged and protected by using the silicon-silicon bonding process, so that the stability of the surface of the super-structure in processing and application is improved.

Systems and methods for silicon dominant lithium-ion cells with controlled lithiation of silicon may include a cathode, an electrolyte, and an anode. The anode may include silicon lithiated at a level after discharge that is configured to be above a minimum threshold level, where the minimum threshold lithiation is 3% silicon lithiation. The lithiation level of the silicon after charging the battery may range between 30% and 95% silicon lithiation, between 30% and 75% silicon lithiation, between 30% and 65% silicon lithiation, or between 30% and 50% silicon lithiation. The lithiation level of the silicon after discharging the battery may range between 3% and 50% silicon lithiation, between 3% and 30% silicon lithiation, or between 3% and 10% silicon lithiation. The minimum threshold level may be a lithiation level below which a cycle life of the battery degrades. The electrolyte may include a liquid, solid, or gel.

The utility model is applicable to the field of photovoltaic technology, and provides an HBC battery, a battery assembly and a photovoltaic system, the HBC battery comprises silicon: a silicon substrate, the silicon substrate is provided with a backlight surface and a light facing surface which are oppositely arranged, the backlight surface of the silicon substrate is alternately provided with a first area and a second area, the first area is a polished area, and the second area is a suede area; the first passivation layer, the first doping layer, the first conductive film layer and the first electrode are sequentially arranged in the first area in a stacked mode, the second passivation layer, the second doping layer, the second conductive film layer and the second electrode are sequentially arranged in the second area in a stacked mode, the first doping layer and the second doping layer are in a special shape, and the first conductive film layer and the second conductive film layer are not communicated; the width of the first electrode is smaller than that of the second electrode. The width of the second electrode is increased, so that the inner back reflection capability of front incident light can be improved, and the current output can be improved. And the influence of contact resistance is reduced, so that the transport efficiency of carriers is improved.

High quality silicon nitride (silicon nitride characterized by low wet etch rate in dilute hydrofluoric acid) is deposited on a semiconductor substrate having one or more recessed features in a highly conformal manner. The deposition involves exposing the semiconductor substrate to a silicon-containing precursor (e.g., an aminosilane) to form an adsorbed layer of the silicon-containing precursor on the substrate. The adsorbed layer is then treated with a plasma formed in a process gas that includes N2, at a temperature of 300-750° C. and a pressure of at least about 15 Torr (e.g., 15-30 Torr) to convert the precursor to silicon nitride. The exposure to precursor and conversion to silicon nitride are repeated in the same process chamber over many deposition cycles until a conformal silicon nitride of desired thickness is formed. In some embodiments the deposited films are hydrogen-free as evidenced by IR spectra.

The present invention is directed to a method for producing an agglomerated lignin-silicon composite material. The method involves the steps of mixing lignin in powder form, at least one silicon-containing active material in powder form and optionally at least one additive; compacting the mixture; and crushing the compacted composite material to obtain an agglomerated lignin-silicon composite material. The invention is also directed to a granular carbon-silicon composite material obtained by heat treatment of the agglomerated lignin-silicon composite material.

The invention provides a silicon composite material and a preparation method thereof, a negative pole piece, a battery and an electric device. The silicon composite material comprises a silicon-based material and a flexible material, and the hardness of the flexible material is smaller than that of the silicon-based material. The silicon-based material comprises at least one of monatomic silicon, a silicon-oxygen compound, a silicon-carbon compound, a silicon-nitrogen compound and a silicon alloy. The flexible material is located on at least part of the surface of the silicon-based material. Through cooperation of the flexible material and the silicon-based material, the risk that the current collector is crushed during preparation of the electrode plate can be reduced, the compaction density of the electrode plate is improved, and the energy density of the battery is further improved.

The invention belongs to the technical field of zeolite catalysts, and particularly relates to a preparation method of hierarchical pore zeolite. Through a high-silicon / pure-silicon seed crystal-selective etching synergistic strategy, in a synthesis stage, more than 30% of high-silicon (silica-alumina ratio (SAR) is greater than or equal to 500) or pure-silicon (SAR-infinity) seed crystals are introduced into a gel system, and most of the seed crystals are ensured to be embedded into a product skeleton in a complete form; in the post-treatment stage, the high-silicon seed crystal area is etched preferentially through an alkaline solution, mesopores are directionally generated, meanwhile, a matrix micropore structure is reserved, and precise customization of the hierarchical pore structure is achieved. The mesopore volume of the prepared hierarchical pore zeolite reaches 0.35 cm < 3 > / g or above, the external specific surface area is increased (180-220 m < 2 > / g vs traditionally smaller than 120 m < 2 > / g), pollution of toxic template agents is avoided, and the method is suitable for large-scale production of multiple types of zeolite such as ZSM-5 and Beta.

A battery and an electronic device. The battery comprises a casing, an electrode assembly, a first negative terminal, and a second negative terminal. The electrode assembly is accommodated in the casing. The electrode assembly comprises a first laminate body and a second laminate body, the first laminate body comprising a first negative electrode sheet, a first separator and a first positive electrode sheet which are stacked in a thickness direction of the electrode assembly, and the second laminate body comprising a second negative electrode sheet, a second separator and a second positive electrode sheet which are stacked in the thickness direction of the electrode assembly. The first negative electrode sheet comprises a first negative active material layer containing a silicon-based material, the silicon-based material being at least one of silicon, silicon carbon and silica. The second negative electrode sheet comprises a second negative electrode active material layer containing graphite. The first negative terminal is electrically connected to the first negative electrode sheet, and the second negative terminal is electrically connected to the second negative electrode sheet. The first negative terminal and the second negative terminal extend from the inside of the casing to the outside of the casing and extend out of the casing.

A silicon composite material and a preparation method, a negative electrode plate, a battery, and an electrical apparatus. The silicon composite material comprises a silicon-based material and a flexible material, wherein the hardness of the flexible material is less than the hardness of the silicon-based material. The silicon-based material comprises at least one of elemental silicon, a silicon-oxygen compound, a silicon-carbon composite, a silicon-nitrogen composite, and a silicon alloy. The flexible material is located on at least part of the surface of the silicon-based material. By means of the combination of the flexible material and the silicon-based material, the risk of a current collector being crushed during the preparation of an electrode plate can be reduced, and the compacted density of the electrode plate can be improved, thus increasing the energy density of a battery.

The invention discloses application of germanium-silicon etching liquid. The etching liquid is applied to selective etching of silicon in a GAA MOSFET structure. The etching liquid comprises the following components in percentage by mass: 1-10% of organic alkali, 0.001-0.1% of a nonionic surfactant, 5-30% of an organic solvent and water, and the sum of the mass fractions of the components is 100%. The etching liquid provided by the invention can selectively etch silicon, has a high etching rate for silicon, has a low etching rate for silicon-germanium alloy, silicon oxide and silicon nitride, and has a high selection ratio for silicon / silicon-germanium alloy.

The application discloses a battery, an electrochemical device and a power utilization device, wherein the battery comprises a battery core, the battery core comprises a pole piece and a pole lug arranged on the pole piece, and the pole piece contains silicon in a negative electrode active material layer; the percentage content of the silicon in the negative electrode active material layer is b, and the unit is %; the longest distance between the pole lug and the length direction end of the pole piece is d, the width of the connection position of the pole lug and the pole piece is m, and the units of d and m are the same; the b, d and m satisfy the following relationship: the application can obtain a battery with higher energy density and better fast charging performance of the battery through comprehensive control.

The present invention is applicable to the technical field of submerged arc furnaces, and provides a closed submerged arc furnace for high-silicon ferrosilicon manganese alloy. By virtue of the feature that the electrodes need to be lifted and lowered, when the electrodes are lifted and lowered, the fixed disk is driven to be lifted and lowered. The lifting and lowering of the fixed disk drive the telescopic screws of each clamping member to be lifted and rotated, thereby driving the scissor structure to expand or contract laterally, and further enabling the clamping degree of the arc-shaped clamping pieces on the sealing ring to be different, so as to achieve clamping the sealing ring to maintain a sealed state after the electrodes are lowered; conversely, when the electrodes are lifted, the sealing ring is loosened to facilitate the loosening of the electrodes and avoid large friction between the sealing ring and the electrodes. At the same time, by arranging a water channel in the sealing ring, on the one hand, it is used to dissipate the heat on the sealing ring, and on the other hand, it is used to change the expansion degree of the insulating flexible sealing ring, so that no matter how much the sealing ring is consumed due to friction, the wrapping degree of the sealing ring on the outer wall of the electrode can always be controlled by the water injection volume of the water channel.

The invention discloses a medium-matte polyester film which is composed of a base material layer A, a surface matte layer B and a matte coating C sprayed on the outer side of the surface matte layer B. The base material layer A is composed of polyethylene glycol terephthalate and silicon dioxide nanoparticles. The surface matte layer B is composed of polyethylene glycol terephthalate, polytetrafluoroethylene and polyethylene glycol nanoparticles; the matte coating C is prepared from polyurethane acrylate, organic silicon silicon dioxide particles, triethylene glycol tripropoxy acrylate, benzophenone, polyether siloxane and polydimethylsiloxane. According to the medium-matt-degree polyester film, by optimizing the proportion of components such as PET, SiO2, PTFE and PEG, the good mechanical strength, wear resistance and matt effect are balanced, and the medium-matt-degree polyester film has excellent light transmittance and ultraviolet resistance. The film not only has low glossiness and high haze, but also shows excellent chemical resistance, scratch resistance and long-term stability, and is suitable for high-end applications such as polaroid release films and optical devices.

The present disclosure relates generally to structures in semiconductor devices and methods of forming the same. More particularly, the present disclosure relates to high electron mobility transistor (HEMT) devices having a silicided polysilicon layer. The present disclosure may provide an active region above a substrate, source and drain electrodes in contact with the active region, a gate above the active region, the gate being laterally between the source and drain electrodes, a polysilicon layer above the substrate, and a silicide layer on the polysilicon layer. The active region includes at least two material layers with different band gaps. The polysilicon layer may be configured as an electronic fuse, a resistor, or a diode.

The present disclosure is applicable to the technical field of photovoltaics. Provided are an HBC cell, a cell assembly and a photovoltaic system. The HBC cell comprises: a silicon substrate, wherein the silicon substrate has a rear surface and a light-facing surface that are disposed opposite each other, first regions and second regions are alternately disposed on the rear surface of the silicon substrate, the first regions are polished regions, and the second regions are textured regions; and a first passivation layer, a first doped layer, a first conductive film layer and a first electrode that are stacked in sequence in each first region, and a second passivation layer, a second doped layer, a second conductive film layer and a second electrode that are stacked in sequence in each second region, wherein the first doped layer and the second doped layer are of different types, the first conductive film layer is not in communication with the second conductive film layer, and the width of the first electrode is less than the width of the second electrode. Increasing the width of a second electrode can improve the internal back-reflection capability of front incident light, thereby helping to improve the current output. The effect of contact resistance is reduced, thereby improving the transport efficiency of carriers.

The invention discloses a battery, an electrochemical device and a power utilization device.The battery comprises a battery cell, and the battery cell comprises a pole piece and a pole lug arranged on the pole piece; the lithium ion battery is characterized in that the negative electrode active material layer of the pole piece contains silicon, the percentage content of the silicon in the negative electrode active material layer is b, and the unit is%; the longest distance between the tab and the end part of the pole piece in the length direction is d, the width of the connecting position of the tab and the pole piece is m, and the units of d and m are the same; b, d and m meet the following relation:-3.1 < = < =-0.11. According to the method, the battery with relatively high energy density can be obtained by comprehensively controlling the value, and meanwhile, the battery can be ensured to have relatively good battery fast charging performance.