98 results about "Silicon silicon" patented technology

The invention relates to the technical field of high polymer materials, in particular to self-cleaning organic silicon foam with a micro-nano structure and a super-hydrophobic surface and a preparation method of the self-cleaning organic silicon foam. The surface structure of the release film is customized through one-step molding transfer printing, and a release agent of the release film contains a super-hydrophobic modified organic silicon light diffusion agent. The light diffusant is mainly silicon dioxide or organic silicon resin microspheres modified by surface long-chain silane. The surface structure of the customized release film is an inverted pyramid-shaped micro-nano structure. The organic silicon foam obtained according to the process has the surface micro-nano structure, super-hydrophobic and self-cleaning functions, and is particularly suitable for manufacturing daily and industrial pads such as mouse pads, table mats and placemats.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention discloses a far-infrared silicon-based high-transmittance metasurface and a designing and processing method, and relates to the field of micro-nano optical devices. The metasurface is of a layered stacking structure with a hole-type metasurface atom array layer as a center layer, and an upper antireflection film layer, an upper substrate layer, the hole-type metasurface atom array layer, a lower substrate layer and a lower antireflection film layer are sequentially arranged on the metasurface from the incident side to the emergent side. Each of the upper antireflection film layer and the lower antireflection film layer comprises a first antireflection layer and a second antireflection layer which are sequentially arranged from inside to outside; the hole-type super-structure atom array layer, the upper substrate layer and the lower substrate layer are all made of monocrystalline silicon. According to the invention, the equivalent refractive index of the matching interface is designed through the sub-wavelength structure, the reflectivity of the far infrared band of 8-12 [mu] m is improved to 95% or more under the condition of no loss, the process route is simple, and the microstructure units of the surface of the super-structure are packaged and protected by using the silicon-silicon bonding process, so that the stability of the surface of the super-structure in processing and application is improved.

The utility model is applicable to the field of photovoltaic technology, and provides an HBC battery, a battery assembly and a photovoltaic system, the HBC battery comprises silicon: a silicon substrate, the silicon substrate is provided with a backlight surface and a light facing surface which are oppositely arranged, the backlight surface of the silicon substrate is alternately provided with a first area and a second area, the first area is a polished area, and the second area is a suede area; the first passivation layer, the first doping layer, the first conductive film layer and the first electrode are sequentially arranged in the first area in a stacked mode, the second passivation layer, the second doping layer, the second conductive film layer and the second electrode are sequentially arranged in the second area in a stacked mode, the first doping layer and the second doping layer are in a special shape, and the first conductive film layer and the second conductive film layer are not communicated; the width of the first electrode is smaller than that of the second electrode. The width of the second electrode is increased, so that the inner back reflection capability of front incident light can be improved, and the current output can be improved. And the influence of contact resistance is reduced, so that the transport efficiency of carriers is improved.

The invention belongs to the technical field of zeolite catalysts, and particularly relates to a preparation method of hierarchical pore zeolite. Through a high-silicon / pure-silicon seed crystal-selective etching synergistic strategy, in a synthesis stage, more than 30% of high-silicon (silica-alumina ratio (SAR) is greater than or equal to 500) or pure-silicon (SAR-infinity) seed crystals are introduced into a gel system, and most of the seed crystals are ensured to be embedded into a product skeleton in a complete form; in the post-treatment stage, the high-silicon seed crystal area is etched preferentially through an alkaline solution, mesopores are directionally generated, meanwhile, a matrix micropore structure is reserved, and precise customization of the hierarchical pore structure is achieved. The mesopore volume of the prepared hierarchical pore zeolite reaches 0.35 cm < 3 > / g or above, the external specific surface area is increased (180-220 m < 2 > / g vs traditionally smaller than 120 m < 2 > / g), pollution of toxic template agents is avoided, and the method is suitable for large-scale production of multiple types of zeolite such as ZSM-5 and Beta.

A silicon composite material and a preparation method, a negative electrode plate, a battery, and an electrical apparatus. The silicon composite material comprises a silicon-based material and a flexible material, wherein the hardness of the flexible material is less than the hardness of the silicon-based material. The silicon-based material comprises at least one of elemental silicon, a silicon-oxygen compound, a silicon-carbon composite, a silicon-nitrogen composite, and a silicon alloy. The flexible material is located on at least part of the surface of the silicon-based material. By means of the combination of the flexible material and the silicon-based material, the risk of a current collector being crushed during the preparation of an electrode plate can be reduced, and the compacted density of the electrode plate can be improved, thus increasing the energy density of a battery.

The application discloses a battery, an electrochemical device and a power utilization device, wherein the battery comprises a battery core, the battery core comprises a pole piece and a pole lug arranged on the pole piece, and the pole piece contains silicon in a negative electrode active material layer; the percentage content of the silicon in the negative electrode active material layer is b, and the unit is %; the longest distance between the pole lug and the length direction end of the pole piece is d, the width of the connection position of the pole lug and the pole piece is m, and the units of d and m are the same; the b, d and m satisfy the following relationship: the application can obtain a battery with higher energy density and better fast charging performance of the battery through comprehensive control.

The invention discloses a medium-matte polyester film which is composed of a base material layer A, a surface matte layer B and a matte coating C sprayed on the outer side of the surface matte layer B. The base material layer A is composed of polyethylene glycol terephthalate and silicon dioxide nanoparticles. The surface matte layer B is composed of polyethylene glycol terephthalate, polytetrafluoroethylene and polyethylene glycol nanoparticles; the matte coating C is prepared from polyurethane acrylate, organic silicon silicon dioxide particles, triethylene glycol tripropoxy acrylate, benzophenone, polyether siloxane and polydimethylsiloxane. According to the medium-matt-degree polyester film, by optimizing the proportion of components such as PET, SiO2, PTFE and PEG, the good mechanical strength, wear resistance and matt effect are balanced, and the medium-matt-degree polyester film has excellent light transmittance and ultraviolet resistance. The film not only has low glossiness and high haze, but also shows excellent chemical resistance, scratch resistance and long-term stability, and is suitable for high-end applications such as polaroid release films and optical devices.

The present disclosure is applicable to the technical field of photovoltaics. Provided are an HBC cell, a cell assembly and a photovoltaic system. The HBC cell comprises: a silicon substrate, wherein the silicon substrate has a rear surface and a light-facing surface that are disposed opposite each other, first regions and second regions are alternately disposed on the rear surface of the silicon substrate, the first regions are polished regions, and the second regions are textured regions; and a first passivation layer, a first doped layer, a first conductive film layer and a first electrode that are stacked in sequence in each first region, and a second passivation layer, a second doped layer, a second conductive film layer and a second electrode that are stacked in sequence in each second region, wherein the first doped layer and the second doped layer are of different types, the first conductive film layer is not in communication with the second conductive film layer, and the width of the first electrode is less than the width of the second electrode. Increasing the width of a second electrode can improve the internal back-reflection capability of front incident light, thereby helping to improve the current output. The effect of contact resistance is reduced, thereby improving the transport efficiency of carriers.

The invention discloses a battery, an electrochemical device and a power utilization device.The battery comprises a battery cell, and the battery cell comprises a pole piece and a pole lug arranged on the pole piece; the lithium ion battery is characterized in that the negative electrode active material layer of the pole piece contains silicon, the percentage content of the silicon in the negative electrode active material layer is b, and the unit is%; the longest distance between the tab and the end part of the pole piece in the length direction is d, the width of the connecting position of the tab and the pole piece is m, and the units of d and m are the same; b, d and m meet the following relation:-3.1 < = < =-0.11. According to the method, the battery with relatively high energy density can be obtained by comprehensively controlling the value, and meanwhile, the battery can be ensured to have relatively good battery fast charging performance.

Provided herein hybrid organic-inorganic redox active materials and related composites, compositions, electrode materials, electrodes electrochemical cells, batteries, methods and systems, which, can be used as to provide high performance cathode active materials in high capacity, high energy density, safe, and long-lasting electrochemical cells and batteries when coupled with Li, Na, K, graphite, lithiated graphite, in situ lithiated graphite, silicon, lithiated silicon, in situ lithiated silicon, silicon-graphite, in situ lithiated silicon-graphite, hard carbon, sodiated hard carbon, graphite-silicone, lithiated graphite-silicon etc. anodes in non-aqueous electrolytes.

The application belongs to the technical field of additive manufacturing, and particularly discloses a wire for reducing light reflection in additive manufacturing of aluminum alloy and a method. The wire comprises an aluminum alloy wire and a silicon coating arranged on the surface of the aluminum alloy wire and used for reducing light reflection of the aluminum alloy wire. The method comprises the following steps: pre-treating the surface of the aluminum alloy wire; and preparing the silicon coating on the surface of the aluminum alloy wire after the surface pre-treatment, the silicon coating being used for reducing light reflection of the aluminum alloy wire. According to the application, a layer of elemental silicon is plated on the surface of the aluminum alloy wire. The silicon has good light absorption performance and belongs to the component of the aluminum alloy, and no other impurities are introduced, so that the high reflection problem of the aluminum alloy can be improved, and the forming quality can be effectively improved.

The invention provides a negative electrode material and a preparation method thereof, and a battery, the negative electrode material comprises an active substance, the active substance comprises silicon, a silicon oxide and a compound of a metal element M, the compound of the metal element M comprises a silicate of the metal element M and / or an oxide of the metal element M; the negative electrode material is measured through electron paramagnetic resonance, the g factor value of an electron spin resonance signal of oxygen atoms is X, and X is larger than or equal to 2.00601 and smaller than or equal to 2.00699; the oxygen vacancy intensity is Y, and Y is more than or equal to 10G and less than or equal to 400G. The negative electrode material provided by the invention has proper oxygen vacancies, a stable lithium ion channel exists in the battery cycle process, the expansion effect of the negative electrode material can be improved, and the cycle stability can be improved.

Methods of reducing wafer bowing in 3D DRAM devices are described using stacks including one or more of epitaxial silicon (Si), carbon doped silicon (SiC), silicon germanium (SiGe), and carbon-doped silicon germanium (SiGeC). A plurality of film stacks is formed on a substrate surface, each of the film stacks comprises two doped silicon layers having different dopant amounts and a sacrificial layer that may be doped or undoped. 3D DRAM devices are also described.

A barium carbonate slurry is sprayed onto the surface of the silicon nitride coating to form the barium carbonate coating. Using the above-mentioned barium carbonate-coated crucible, the probability of micron-level impurities in silicon ingots is significantly reduced during ingot production, decreasing from 8%-20% when using silicon nitride-coated crucibles to 0%. This effectively solves the technical problem of impurities in the ingot silicon production process and reduces the scrap rate of ingot silicon.

The present disclosure provides a negative electrode sheet, a cell, a battery, and an electric device. The negative electrode sheet comprises: a negative electrode current collector; a first active layer, arranged on at least one side surface of the negative electrode current collector, a negative electrode active material in the first active layer comprising first graphite and silicon-carbon; and a second active layer, arranged on the side of the first active layer away from the negative electrode current collector, a negative electrode active material in the second active layer comprising second graphite and silicon monoxide. The particle size of the silicon-carbon ranges from 4 μm to 7 μm. The active layers can be prevented from peeling off and falling off from the negative electrode current collector, ensuring that the battery formed from the negative electrode sheet has a high energy density, and enabling the negative electrode sheet to have good electrochemical performance and electrode sheet stability.

The invention provides a preparation method of a thick silicon backplane for an MEMS differential pressure chip. The preparation method comprises the following steps: carrying out wet etching on a through hole of a single-sided polished silicon wafer and a double-sided polished silicon wafer, temporarily bonding with quartz glass, and removing a mask on a single-side polished surface; the single-face polished silicon wafer and the double-face polished silicon wafer are subjected to de-bonding, cleaning, activation and silicon-silicon bonding with the quartz glass respectively; and annealing and cleaning after silicon-silicon bonding, and removing the mask and cleaning after annealing. Through the wet etching method, the processing of the silicon backboard through hole is realized, and the problems of silicon wafer fracture risk and particulate matter residue in the hole in mechanical drilling and laser drilling are avoided; by adopting a mode of temporarily bonding quartz glass with a single-sided polished silicon wafer and a double-sided polished silicon wafer, single-side mask removal of the single-sided polished silicon wafer and the double-sided polished silicon wafer is realized; thickness superposition of the silicon backplane is realized by adopting a silicon-silicon bonding mode. And meanwhile, the strength of the thick silicon back plate is enhanced by adopting an annealing technology, and an effective solution is provided for preparation of the thick silicon back plate.

A negative electrode for an all-solid-state battery, an all-solid-state battery including the same, and a method of manufacturing a negative electrode for an all-solid-state battery are disclosed. The negative electrode includes a negative electrode current collector and a negative electrode active material layer. The negative electrode active material layer includes a negative electrode active material and a solid electrolyte. The negative electrode active material includes a porous support and silicon (Si). The silicon fills at least a portion of the pores of the porous support.

The invention belongs to the technical field of preparation of lithium battery negative electrode materials, and relates to a silicon-containing carbon material, preparation thereof and application of the silicon-containing carbon material in the lithium battery negative electrode materials, the silicon-containing carbon material contains carbon and silicon, the silicon is distributed in the carbon material, and the silicon-containing carbon material is provided with pore channels and / or holes. The preparation method comprises the following steps: reacting an aromatic hydrocarbon-containing raw material in the presence of silicon tetrachloride, pre-oxidizing and carbonizing. The silicon-silicon-carbon material is used as a lithium battery negative electrode material, and is relatively high in capacity and relatively good in stability.

The present invention relates to a carbon-silicon-silicon / carbon composite comprising: a carbon-silicon composite including silicon disposed inside pores of a porous carbon support; and a silicon / carbon composite matrix disposed on the surface of the carbon-silicon composite, and a manufacturing method therefor. According to the present invention, the overall silicon size can be suppressed to be small, and the formation of Crystal-LixSiy (for example, Li15Si4 or Li3.75Si), which is an intermediate phase affecting the deterioration of battery performance, is suppressed, thereby mitigating the deterioration of battery performance during repeated charge–discharge cycles.

The invention relates to the field of electrode materials, and discloses porous silicon, a silicon-carbon composite material, a preparation method of the silicon-carbon composite material and an electrochemical device.The preparation method of the porous silicon comprises the steps that washed silicon powder is added into mixed acid liquor for an etching reaction, and the reaction time is the first duration; the mixed acid liquor comprises hydrofluoric acid, nitric acid, a surfactant and a pore-forming agent; and carrying out later-stage purification treatment on the reacted silicon powder to obtain the porous silicon. Porous silicon which is uniformly etched and has a certain etching depth can be generated under a mild condition, the production cost is low, industrial mass production can be realized, good commercial application value is achieved, meanwhile, the silicon-carbon composite material with a certain silicon-carbon ratio is obtained, and the silicon-carbon composite material can be used as a negative electrode material of a lithium ion battery and has the advantages of buffering volume expansion and improving the performance of the lithium ion battery. And the cycle stability of the negative electrode is improved.

The invention discloses a silicon through hole sandwich cavity MEMS wafer level packaging method and a packaging body thereof, and belongs to the technical field of semiconductor chip packaging. Comprising an MEMS chip, an ASIC carrier plate chip, a cap wafer chip, an embedded interconnection mechanism, an upper silicon wafer bonding layer, a lower silicon wafer bonding layer, a silicon through hole, a step, a step bonding pad, a substrate, a plastic package shell, a plastic package shell cavity and an MEMS chip cavity. Through silicon via, wafer-level silicon-silicon bonding, lead bonding, SMT surface mounting technology, dry etching, chip inner cavity preparation and other technologies are comprehensively adopted, and low-cost and high-feasibility three-dimensional and miniaturized integration of the inertial MEMS chip is achieved. The problems that in an existing inertial MEMS chip three-dimensional integration technology, a wafer level scheme is complex in technology, high in initial cost, expensive in technology and equipment, poor in mechanical stress sensitivity, difficult in calibration test and low in maintainability are solved. The method is widely applied to the technical field of high-integration-density and high-power 3D packaging.

The invention discloses a lithium ion battery lignin-based silicon carbon-silicon oxygen negative electrode material preparation method, which comprises: (1) mixing lignin powder and nanometer silicon powder containing multivalent silicon oxide according to a mass ratio of 7-9: 1-3, and carrying out melting kneading at a temperature of 120-130 DEG C to form particles; (2) performing programmed heating to 800-1400 DEG C in an inert atmosphere, and carbonizing for 1-3 hours to form a complex of hard carbon and nano silicon / silica; and (3) obtaining the negative electrode material with D50 of 7-9 [mu] m through soaking and grinding, cooking and washing, acid bath purification, electromagnetic impurity removal and airflow grinding. The method provided by the invention solves the industrial problems of complex manufacturing technology, high expansion rate and high cost of the silicon-carbon negative electrode, provides a green and efficient negative electrode solution for the new energy industry, and has a wide application prospect.

The utility model discloses a double crossbeam silicon core structure belongs to polycrystal silicon production technical field, including upper silicon core bridge beam, lower silicon core bridge beam and two silicon core column bodies. The upper silicon core bridge beam both ends are equipped with first radial hole, and are connected with the top of silicon core column body, and the second radial hole is equipped with to two silicon core column bodies same height, and is connected with the both ends of lower silicon core bridge beam. The technical scheme forms the rectangular frame through double crossbeam, and improves structural stability, and the lower crossbeam realizes current shunt, and reduces the current density of upper portion, and balances upper and lower temperature, solves the uneven growth of silicon rod, crossbeam angle melting problem, and adopts silicon - silicon homogeneity connection to avoid impurity pollution, and adapts polycrystal silicon production demand.

The invention relates to high-plasticity high-silicon silicon steel and a preparation method and application thereof, and belongs to the technical field of soft magnetic material manufacturing. The high-plasticity high-silicon silicon steel comprises the following chemical components: 3.5-6.6% of Si, 0.5-2.0% of Al, 0.02-0.1% of B, 0.03-0.06% of Zr, 0.1-0.5% of Mn, less than or equal to 0.005% of C, less than or equal to 0.003% of S, less than or equal to 0.004% of P, less than or equal to 0.003% of N, less than or equal to 0.003% of O and the balance of Fe and inevitable impurities. Through mutual cooperation of the elements, especially the addition of the B and Zr elements, grains are refined, the content of ordered phases is reduced, the plasticity of the high-silicon silicon steel is improved, and the obtained high-silicon silicon steel does not have brittle fracture; and meanwhile, the high-silicon silicon steel with high magnetic induction intensity, low iron loss and excellent thickness tolerance and surface quality is obtained.

The invention relates to a light photovoltaic module backboard flame-retardant coating and a preparation method thereof. Raw materials of the coating comprise the following components: aliphatic polyurethane acrylate, a phosphoric acid modified methacrylic acid oligomer, an intumescent flame retardant, polysiloxane, polysilazane, methyl phenyl silicone resin, MQ resin, hollow titanium dioxide, hollow ceramic microspheres, a silicate ceramic agglutinant, a curing agent, an ultraviolet light absorber, a leveling wetting agent, an antioxidant and a solvent. The components of the flame-retardant coating form a plurality of synergistic effects such as expansion-ceramic synergy, phosphorus-silicon synergy and silicon-silicon synergy, so that the coating realizes efficient flame retardance, high carbonization residue, high heat insulation and excellent mechanical properties.

The invention discloses an application of a germanium-silicon etching solution. The invention specifically discloses an application of a germanium-silicon etching solution in etching a sacrificial layer in a GAA MOSFET (Good Acrylic Acid Metal-Oxide-Semiconductor Field Effect Transistor) structure. The germanium-silicon etching liquid is prepared from the following components in percentage by mass: 0.1%-5% of fluoride, 5%-70% of an oxidizing agent, 0.1%-2% of a wetting agent, 0.1%-2% of a complexing agent and a solvent, the sum of the mass fractions of all the components is 100%, and the mass fractions are the percentage of the mass of all the components in the total mass of the germanium-silicon etching liquid. When the germanium-silicon etching liquid is used for etching a sacrificial layer in a GAA MOSFET structure, high-selectivity etching of germanium-silicon / silicon can be achieved, and the etching effect is good and uniform.

The invention provides a bonding method and a bonding structure, and belongs to the technical field of semiconductors. The method comprises the steps that a first silicon substrate and a second silicon substrate are provided, and the to-be-bonded surfaces of the first silicon substrate and the second silicon substrate have the same crystal orientation; forming a first groove structure on the first silicon substrate, and forming a second groove structure on the second silicon substrate; forming an atomic-scale intermediate layer on the to-be-bonded surfaces of the first silicon substrate and the second silicon substrate, wherein the thickness of the atomic-scale intermediate layer is any one of 1 nm and 3 nm; and carrying out bonding treatment on the first silicon substrate and the second silicon substrate, so that the groove structures are aligned and an insulation region or a closed region is formed, and a target bonding structure is obtained. According to the method, the defects of insufficient silicon-oxygen bonding strength and high virtual connection rate are overcome, meanwhile, cracking and failure caused by surface roughness and local defects of pure silicon-silicon bonding are avoided, and the interface bonding problem of the inertial sensor under the high reliability requirement is solved.

This invention belongs to the field of microelectromechanical technology and discloses an all-silicon resonant ring gyroscope structure and its manufacturing method. The silicon structure layer consists of multiple concentric rings of different radii that are interconnected. The rings are connected by spokes, which are symmetrically distributed circumferentially and supported by a central anchor point. Additional structures are formed between the rings and anchored to the underlying silicon via layer structure. The outermost ring consists of arc-shaped discrete electrodes. The ring structure pattern is identical to the spacing between the additional structures and electrodes, ensuring uniform heat dissipation during dry etching and improving etching uniformity. The silicon structure layer, silicon via layer, and silicon capping layer are bonded separately to achieve device sealing. The silicon structure layer and silicon via layer are connected by silicon-silicon bonding. Silicon vias are etched on the silicon via layer, and electrodes are used to extract signals through the silicon vias on the silicon via layer. The silicon capping layer structure corresponds to the sealing ring and additional structures of the structure layer, and is electrically interconnected and grounded.