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Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method

A technology of acceleration sensor and elastic beam, which is applied in the field of micro-electromechanical systems, can solve the problems of complex process and high cost, and achieve the effects of simplified process, stable performance and improved process controllability

Active Publication Date: 2012-06-13
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The process of this method is very complicated and the cost is relatively high

Method used

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  • Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method
  • Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method
  • Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] 1. Fabrication of elastic beam-mass structure:

[0058] (1) Utilize the anisotropic etching method to make a capacitor gap 12 on the upper and lower surfaces of the oxidized double-throwing double-device layer SOI silicon wafer, and the etching depth is 1 μm ( image 3 b);

[0059] (2) Remove the oxide layer in the remaining area, perform secondary oxidation to form silicon oxide, double-sided photolithography, and make overload protection bumps 5 (1 μm in height) on the upper and lower surfaces of the mass block by anisotropic etching method, such as image 3 c;

[0060] (3) Remove the oxide layer in the remaining area, oxidize to form silicon oxide, use double-sided photolithography, and use anisotropic etching method to etch a double-sided symmetrical elastic beam-mass structure pattern on the upper and lower surfaces of the silicon wafer, etch The stop layer is the buried oxide layer of SOI, and forms the damping adjustment groove 7, such as image 3 d; Width of ...

Embodiment 2

[0070] The manufacturing method of the damping adjustment groove in the first embodiment is as follows: by designing the width of the damping groove, anisotropic corrosion is used to self-stop to form a V-shaped damping adjustment groove. In Example 2, a two-step photolithography method is used to fabricate the damping adjustment groove.

[0071] (1) Utilize the anisotropic etching method to make a capacitor gap 12 on the upper and lower surfaces of the oxidized double-throwing double-device layer SOI silicon wafer, and the etching depth is 1 μm, such as Figure 4 as shown in a;

[0072] (2) Remove the oxide layer in the remaining area, form silicon oxide by secondary oxidation, double-sided photolithography, and make overload protection bumps (1 μm in height) on the upper and lower surfaces of the mass block by anisotropic etching method, such as Figure 4 as shown in b;

[0073] (3) Remove the oxide layer in the remaining area, oxidize to form silicon oxide, use double-sid...

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Abstract

The invention relates to a capacitive type micro-acceleration sensor with a double-sided symmetrical elastic beam structure and a manufacturing method. The capacitive type micro-acceleration sensor is characterized in that: (1) an SOI silicon wafer of a double-device layer is a substrate with an elastic beam-mass block structure; (2) a fixed upper electrode and a fixed lower electrode are respectively located on the upper and lower sides of the mass block; (3) the elastic beam is a straight beam of which one end is connected with the mass block, and the other end is connected with a support frame; (4) overload protection salient points are formed on the upper and lower surfaces of the mass block; (5) damping regulation grooves are formed on the upper and lower surfaces of the mass block; and (6) an electrode leading through hole of the mass block is located above the support frame. By adopting the wet etching self-stop technology, the elastic beam-mass block structure which is the most important in the acceleration sensor is processed and formed once in the wet etching; and the bonding of three layers of silicon wafers is realized by a silicon-silicon direct bonding method, and the electrode leading through hole of the mass block is formed on the fixed upper electrode through infrared aligned photoetching. According to the invention, the cross-axis sensitivity is reduced while the device sensitivity is improved.

Description

technical field [0001] The invention relates to a double-sided symmetrical elastic beam structure capacitive micro-acceleration sensor and a manufacturing method thereof, more precisely the invention relates to a double-sided symmetrical elastic beam structure capacitive micro-acceleration sensor based on a double device layer SOI silicon chip and a manufacturing method. It belongs to the field of microelectromechanical systems. Background technique [0002] The micro-accelerometer is an important inertial sensor that converts the physical signal of external acceleration into an electrical signal that is easy to measure. There are many types of silicon micro-acceleration sensors. According to the movement mode of the detection mass, there are angular vibration type and linear vibration type; according to the detection mass support mode, there are torsion pendulum type and cantilever beam type; There are capacitive, resistive and tunnel current types; according to the contro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01P15/125B81C1/00
Inventor 车录锋周晓峰熊斌王跃林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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