The invention discloses a preparation method of 
CMOS (Complementary 
Metal-
Oxide-
Semiconductor) anemograph based on ceramics 
wafer level 
package, which comprises following steps: 1, preparing a ceramics 
chip comprising the step of manufacturing a 
heating element and a pad used for electric connection, hot link and electric induction on the lower surface of the ceramics 
chip by a 
sputtering and 
etching technology; 2, preparing a 
silicon chip comprising the steps of preparing a heat sense thermometric element by a standard 
CMOS technology, preparing an insulation cavity and a shredding slot which is arranged at the back of the 
silicon chip by an MEMS (Micro-Electromechanical 
System) 
anisotropy wet 
etching technology and then preparing 
copper salient points and solder on the surface of the 
silicon chip; 3, realizing the mutually-connected 
package, electric connection and hot link between the 
silicon chip and the ceramics chip; 4, scribing; and 5, shredding. The invention has the advantages that the preparation method is compatible with the standard 
CMOS technology in the whole prepare process of the anemograph, the aftertreatment technology is simple and the 
wafer level 
package of the anemograph is realized by adopting a flip-chip bonding packaging technology, thereby having the advantages of high process consistency, good compatibility, simple aftertreatment technology and low cost.