The invention discloses a preparation method of
CMOS (Complementary
Metal-
Oxide-
Semiconductor) anemograph based on ceramics
wafer level
package, which comprises following steps: 1, preparing a ceramics
chip comprising the step of manufacturing a
heating element and a pad used for electric connection, hot link and electric induction on the lower surface of the ceramics
chip by a
sputtering and
etching technology; 2, preparing a
silicon chip comprising the steps of preparing a heat sense thermometric element by a standard
CMOS technology, preparing an insulation cavity and a shredding slot which is arranged at the back of the
silicon chip by an MEMS (Micro-Electromechanical
System)
anisotropy wet
etching technology and then preparing
copper salient points and solder on the surface of the
silicon chip; 3, realizing the mutually-connected
package, electric connection and hot link between the
silicon chip and the ceramics chip; 4, scribing; and 5, shredding. The invention has the advantages that the preparation method is compatible with the standard
CMOS technology in the whole prepare process of the anemograph, the aftertreatment technology is simple and the
wafer level
package of the anemograph is realized by adopting a flip-chip bonding packaging technology, thereby having the advantages of high process consistency, good compatibility, simple aftertreatment technology and low cost.