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1363 results about "Salient point" patented technology

Wafer level fan-out chip packaging method

The invention relates to a wafer level fan-out chip packaging method, comprising the following technological processes: a stripping foil and a film dielectric layer I are sequentially covered on the surface of the wafer of a carrier, a photoetching pattern opening I is formed on the film dielectric layer I; a metal electrode and a re-wiring metal routing wire which are connected with a base plate end are arranged on the photoetching pattern opening and the surface thereof, a film dielectric layer II is covered on the surface of the metal electrode, the surface of the re-wiring metal routing wire, and the surface of the film dielectric layer I which are connected with the base plate end, and a photoetching pattern opening II is formed on the film dielectric layer II; a metal electrode connected with a chip end is arranged on the photoetching pattern opening II, after a chip is arranged on the metal electrode connected with the chip end in an inverting way, the injection molding of packaging material and solidification are carried out, so as to form a packaging body with plastic-packaging material; the wafer of the carrier and the stripping foil are separated from the packaging body with plastic-packaging material, so as to form a plastic-packaging wafer; a welding sphere back returns to form a welding ball salient point; cutting is carried out by uniwafers for forming the final structure of the fan-out chip. The method has low cost and a carrying function, and can well solve the problem that the chip is shifted in the technological process.
Owner:JIANGYIN CHANGDIAN ADVANCED PACKAGING CO LTD

Flexible retina salient point micro-electrode chip and production method thereof

The invention discloses a flexible retina emboss micro-electrode chip in the technical field of a micro-electronic-mechanical-system and a manufacture method thereof. In the method, parylene C is used as a flexible substrate and an insulating material for preparing a micro-electrode array which is formed by the arrangement of a plurality of micro-electrode sensing elements; simultaneously, an electrode lead and a lead welding point are manufactured to form the flexible retina emboss micro-electrode chip which is planted into the retina part of a human eye, can realize the safe and effective contact with the neuron of the retina, effectively reduce the stimulation to a pulse current, reduce the inserting damage to a biological tissue caused by the planting of the micro-electrode and can improve the effect of electric simulating and neural signal recording, thereby better recovering the visual function. In the invention, the parylene C is used as the substrate of a flexible electrode; the excellent electric insulating performance and mechanical performance thereof can improve the biocompatibility of the micro-electrode chip to a larger extent and have good stability for a long period. In the invention, an MEMS technique is adopted, thus realizing the integration of a functional unit and the flexible substrate of the micro-electrode.
Owner:SHANGHAI JIAO TONG UNIV

Mixed bonding structure for three-dimension integration and bonding method for mixed bonding structure

The invention relates to a mixed bonding structure for three-dimension integration and a bonding method for the mixed bonding structure. The mixed bonding structure for the three-dimension integration comprises a first substrate. The first substrate is provided with bonding interconnection metal electrically connected with the first substrate; the other end part of the bonding interconnection metal, which is correspondingly connected with the first substrate, is sunk to form a cavity; a first dielectric adhesion layer covers at the periphery of the bonding interconnection metal on the first substrate; the bonding interconnection metal is encircled by the first dielectric adhesion layer; and the first dielectric adhesion layer is lower than the edge of the bonding interconnection metal. According to the mixed bonding structure for the three-dimension integration, the first dielectric adhesion layer is lower than the edge of the top part of a salient point, and when bonding is performed under the pressure action, the edge of the top part of the salient point is bonded with a pad of a second substrate, and thereby, the dielectric adhesion layer can be stopped entering the surface of the bonding interconnection metal, which is bonded with the pad, and the open circuit problem and the reliability problem can be avoided. The mixed bonding structure for the three-dimension integration is compact in structure and is convenient in process operation.
Owner:NAT CENT FOR ADVANCED PACKAGING

Salient point LED and manufacturing method thereof

ActiveCN101350381ASolve the problem of centralized heat dissipationRelaxed machining accuracy requirementsSemiconductor/solid-state device detailsSolid-state devicesMiniaturizationDie bonding
The invention relates to a protruding point luminescent diode, wherein a protruding point lower metal is plated on an electrode of a protruding point luminescent diode chip, metallic protruding points are grown on the upper portion of the protruding point lower metal, a passivation layer is grown on the surface of the upper portion of the luminescent diode chip excepting the surface of an electrode, a welding pad is made on a packing support, the metallic protruding points of the protruding point luminescent diode are inversely welded on the welding pad of the packing support. The method for preparing the diode comprises the following steps: making the passivation layer, sputtering a metal sacrificial layer, making a photoresist mask, forming the metallic protruding points, removing the photoresist mask, removing the metal sacrificial layer, reducing, cutting into separated chips and inversely welding on an SMD support, and then forming an inversely welded LED die set. The method enables the chip of the luminescent diode to be without the gold wire bonding and the die bond technique, directly switches a circuit and assembles the chip on a base plate or a metallic support, realizes the miniaturized package and the die set with multiple chips, and successfully solves the problem of the heat dissipation of the luminescent diode.
Owner:APT ELECTRONICS

Supporting flow guide plate and separation filtering membrane column device

The invention discloses a supporting flow guide plate and a separation filtering membrane column device. The supporting flow guide plate is a disc with a central circular hole; a plurality of rings of flow blocking salient points are arranged on the disc; a radial rotational flow slit is also formed on the disc; one of two sides of the rotational flow slit of the disc upwarps to be extended into an upwarping part, and the other side is bent downwards to be extended into a lower bending part; and the upwarping part is parallel to the lower bending part. The separation filtering membrane column device comprises the supporting flow guide plate and a membrane; an inner pull rod for fixing the supporting flow guide plate and the membrane and upper and lower stacking plates are also installed in a bearing outer shell; a mounting hole is formed at the center of the membrane; a radial gap aligned with the rotational flow slit is also formed on the membrane; and an outer pull rod for supporting, tensioning and pressing upper and lower end cover flanges is installed outside the bearing outer shell. Compared with a traditional membrane component, the separation filtering membrane column device has the beneficial effects that the pressure loss is reduced by above 70 percent, and the product efficiency is improved. The separation filtering membrane column device is a special device with the advantages of antipollution and low energy consumption and is particularly suitable for an economical treatment process of a high-concentration fluid.
Owner:CHENGDU MEIFUTE MEMBRANE TECHNOLOGY CO LTD

Method for measuring planta pressure for rehabilitation therapy

The invention relates to a method for measuring planta pressure for rehabilitation therapy. The method is characterized in that thin film piezoresistive type pressure sensors are adopted to be placed on planta pressure points in left and right sock linings, each sock lining is of a three layer structure, and the top layer and the bottom layer are fiber layers; the thin film piezoresistive type pressure sensors are tightly adhered to and fixed on the bottom layers closely, are fixedly connected with the fibers at the top layers through soft salient points, and transmits the acquired resistance signals corresponding to the pressure to two signal processing transmitters which are corresponding to the pressure sensors of the left and right sock linings, the resistance signals are subjected to resistance-voltage conversion and wave filtration and then are output to two corresponding micro processors so as to be subjected to AD (analog-to-digital) conversion respectively; data acquired from two feet are merged into a data packet and is transmitted to a receiver; the receiver transmits the data of the left and right feet to a PC (personal computer) through a USB (universal serial bus); and the PC reads the data through the triggering of a timing device, and unpacks the data packet, and signal processing and three dimensional display are carried out through software.
Owner:SOUTHEAST UNIV

Capacitive type micro-acceleration sensor with double-sided symmetrical elastic beam structure and manufacturing method

The invention relates to a capacitive type micro-acceleration sensor with a double-sided symmetrical elastic beam structure and a manufacturing method. The capacitive type micro-acceleration sensor is characterized in that: (1) an SOI silicon wafer of a double-device layer is a substrate with an elastic beam-mass block structure; (2) a fixed upper electrode and a fixed lower electrode are respectively located on the upper and lower sides of the mass block; (3) the elastic beam is a straight beam of which one end is connected with the mass block, and the other end is connected with a support frame; (4) overload protection salient points are formed on the upper and lower surfaces of the mass block; (5) damping regulation grooves are formed on the upper and lower surfaces of the mass block; and (6) an electrode leading through hole of the mass block is located above the support frame. By adopting the wet etching self-stop technology, the elastic beam-mass block structure which is the most important in the acceleration sensor is processed and formed once in the wet etching; and the bonding of three layers of silicon wafers is realized by a silicon-silicon direct bonding method, and the electrode leading through hole of the mass block is formed on the fixed upper electrode through infrared aligned photoetching. According to the invention, the cross-axis sensitivity is reduced while the device sensitivity is improved.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Three-dimensional active heat-dissipation packaging structure of embedded micro channel and manufacturing process thereof

ActiveCN109524373AEliminate interfacial thermal resistanceRealize multi-dimensionalSemiconductor/solid-state device detailsSolid-state devicesHigh densityEngineering
The invention, which belongs to the technical field of integrated circuit packaging, relates to a three-dimensional active heat-dissipation packaging structure of an embedded micro channel and a manufacturing process thereof. The three-dimensional active heat-dissipation packaging structure comprises a three-dimensional packaging structure. A micro channel chip structure unit is arranged at the top layer of the three-dimensional packaging structure and includes an IC chip having an embedded micro flow structure and a micro channel cover plate. A two-dimensional heterogeneous integrated structural unit is arranged at the bottom layer of the three-dimensional packaging structure and includes a TSV adapter board connected with a bottom filling layer through array salient points and an IC chip; the micro channel chip structure unit and the two-dimensional heterogeneous integrated structural unit are connected with the bottom filling layer through the array salient points; and then packaging with an embedded micro channel substrate and a housing is carried out to form a three-dimensional active heat-dissipation packaging structure. Therefore, the inter-layer thermal resistance of the three-dimensional packaging system is reduced substantially; the heat dissipation capability of the circuit is improved effectively; and the high-density and high-performance three-dimensional system-level packaging is enhanced and the safety and reliability are high.
Owner:58TH RES INST OF CETC

Three-dimensional integrated method of sensor array and signal processing circuits

The invention discloses a three-dimensional integrated method of a sensor array and signal processing circuits in the technical field of semiconductor three-dimensional integration. The three-dimensional integrated method comprises the following steps of: (1) manufacturing sensors on a top layer single crystal material of an insulating substrate device; (2) manufacturing the signal processing circuits and metal interconnection lines on the surface of a signal processing circuit substrate and manufacturing metal salient points on the metal interconnection lines; (3) carrying out a bonding process or a three-dimensional interconnection process; (4) carrying out metal thermocompression bonding on bonding metal salient points and the salient points; (5) removing a temporary bonding polymer layer and auxiliary wafers; and (6) manufacturing plane interconnection lines. By utilizing the three-dimensional integrated method, integration of the sensors and the signal processing circuits is realized, hovering of the sensors is realized, electric signal connection of the sensors and the signal processing circuits is realized by utilizing three-dimensional interconnection lines, the manufacture process is simple, the sensors can be suspended, and excellent consistency of the sensors and large-scale array structure can be obtained.
Owner:TSINGHUA UNIV

Integrated anemograph based on ceramics wafer level package and preparation method thereof

The invention discloses a preparation method of CMOS (Complementary Metal-Oxide-Semiconductor) anemograph based on ceramics wafer level package, which comprises following steps: 1, preparing a ceramics chip comprising the step of manufacturing a heating element and a pad used for electric connection, hot link and electric induction on the lower surface of the ceramics chip by a sputtering and etching technology; 2, preparing a silicon chip comprising the steps of preparing a heat sense thermometric element by a standard CMOS technology, preparing an insulation cavity and a shredding slot which is arranged at the back of the silicon chip by an MEMS (Micro-Electromechanical System) anisotropy wet etching technology and then preparing copper salient points and solder on the surface of the silicon chip; 3, realizing the mutually-connected package, electric connection and hot link between the silicon chip and the ceramics chip; 4, scribing; and 5, shredding. The invention has the advantages that the preparation method is compatible with the standard CMOS technology in the whole prepare process of the anemograph, the aftertreatment technology is simple and the wafer level package of the anemograph is realized by adopting a flip-chip bonding packaging technology, thereby having the advantages of high process consistency, good compatibility, simple aftertreatment technology and low cost.
Owner:SOUTHEAST UNIV

Stainless steel muffler and manufacturing process thereof

The invention discloses a stainless steel muffler and a manufacturing process thereof, and belongs to the technical field of manufacturing refrigeration system components. The current muffler used by a refrigeration system is high in cost or easily pollutes the environment and is corroded by rusting. The stainless steel muffler consists of a stainless steel hush pipe and a copper air inlet pipe and a copper air outlet pipe welded at two ends of the hush pipe, and the manufacturing method for the stainless steel muffler comprises the following steps of: 1, preparing the hush pipe by using a stainless steel pipe; 2, preparing the air inlet pipe and the air outlet pipe by using copper pipes, and beating the side walls at welding positions of the copper pipes to form salient points which protrude from inside to outside; 3, assembling, namely inserting the air inlet pipe and the air outlet pipe into welding ports at two ends of the hush pipe respectively, fixing the air inlet pipe and the air outlet pipe, and filling a solid bronze solder into welding seams; 4, welding, namely passing the assembled muffler to be welded through a welding furnace, and controlling the temperature of the welding furnace to be between 900 and 1,065 DEG C and the passing speed to be between 0.25 to 0.7 meter / minute; and 5, performing leak checking. By the stainless steel muffler, an anti-rust spraying treatment is not needed, and the rusting of the muffler is avoided.
Owner:浙江三集不锈钢有限公司
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