Salient point LED and manufacturing method thereof
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A technology for light-emitting diodes and a manufacturing method, which is applied in the manufacturing of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of lead occupied space, large package volume, restricting the application of multi-chip LED products, etc., and reduce the package size. The effect of relaxing the requirements of size and machining accuracy
Active Publication Date: 2009-01-21
APT ELECTRONICS
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Problems solved by technology
Because traditional LED chips need to be connected by wires, the wires occupy additional space, resulting in excessive package volume, which is not conducive to the development of subsequent product miniaturization
And this kind of chip is not conducive to the integration and assembly of control chips. For products that require the assembly of multiple color LED chips, the manufacturing and packaging of traditional LED chips limit the application of multi-chip LED products.
Method used
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Embodiment 1
[0036] Combination of technologies, methods and designs adopted for the present invention Figure 5 For illustration, the drawings used are not drawn to scale. For the sake of simplicity, only one LED chip is used as an illustration, and LED chips of different sizes and wavelengths can be used in this embodiment. The manufacturing steps of the gold bump light-emitting diode chip are as follows:
[0037] 1. Form a passivation layer on the LED chip, such as Figure 5 As shown in 5-1;
[0038] 2. Sputtering titanium / gold is the metal sacrificial layer material to form the metal sacrificial layer 15, such as Figure 5 As shown in 5-2
[0039] 3. Make mask 16, such as Figure 5 As shown in 5-3;
[0040] 4. Make gold as the under-bump metal (UBM) material and fill the metal bump (Metal Bump / Stud) material 14 to form gold metal bumps, such as Figure 5 As shown in 5-4;
[0041] 5. Remove the mask 16, such as Figure 5 as shown in 5-5;
[0042] 6. Remove the metal sacrificial ...
Embodiment approach 2
[0047] For the technology, method and design adopted in the present invention in conjunction with the attached Figure 6 Be explained. The drawings used are not drawn to scale. For the sake of simplicity, only one LED chip is used as an illustration, and LED chips of different sizes and wavelengths can be used in this embodiment. The manufacturing steps of the lead-tin alloy bump light-emitting diode chip are as follows:
[0048] 1. Form a passivation layer on the LED chip, such as Figure 6 As shown in 6-1;
[0049] 2. Sputter titanium / tungsten / copper alloy as the metal sacrificial layer material to form the metal sacrificial layer 15, such as Figure 6 As shown in 6-2;
[0050] 3, make photoresist mask 16, as Figure 6 As shown in 6-3;
[0051] 4. Copper electroplating is used as under-bump metal 13 (UBM) material and lead-tin alloy is electroplated as metal bump 14 (MetalBump / Stud) material to form lead-tin alloy metal bump 14, such as Figure 6 Shown in 6-4.
[00...
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Abstract
The invention relates to a protruding point luminescent diode, wherein a protruding point lower metal is plated on an electrode of a protruding point luminescent diode chip, metallic protruding points are grown on the upper portion of the protruding point lower metal, a passivation layer is grown on the surface of the upper portion of the luminescent diode chip excepting the surface of an electrode, a welding pad is made on a packing support, the metallic protruding points of the protruding point luminescent diode are inversely welded on the welding pad of the packing support. The method for preparing the diode comprises the following steps: making the passivation layer, sputtering a metal sacrificial layer, making a photoresist mask, forming the metallic protruding points, removing the photoresist mask, removing the metal sacrificial layer, reducing, cutting into separated chips and inversely welding on an SMD support, and then forming an inversely welded LED die set. The method enables the chip of the luminescent diode to be without the gold wire bonding and the die bond technique, directly switches a circuit and assembles the chip on a base plate or a metallic support, realizes the miniaturized package and the die set with multiple chips, and successfully solves the problem of the heat dissipation of the luminescent diode.
Description
technical field [0001] The invention relates to the field of light-emitting diodes and packaging and manufacturing methods thereof, in particular to a bump light-emitting diode and a manufacturing method thereof. Background technique [0002] The structure of the existing traditional gallium nitride-based (GaN) light-emitting diodes, such as figure 1 As shown, it is made by forming multi-layer gallium nitride epitaxial crystals including a light emitting layer 2 on a sapphire substrate 1 . Metal electrodes: P electrode 5 and N electrode 6 are respectively formed on the N-type region 3 crystal layer and the P-type region 4 crystal layer. The commonly used assembly method of the existing light-emitting diode LED is to fix the LED chip in the packaging bracket 8 with an interface thermally conductive material 7 (TIM), and connect the metal electrodes of the LED device and the package of the device through gold wire bonding 9 (Wire Bonding). bracket8. Among them, the metal el...
Claims
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Application Information
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