The invention relates to a protruding point luminescent diode, wherein a protruding point lower metal is plated on an electrode of a protruding point luminescent diode chip, metallic protruding points are grown on the upper portion of the protruding point lower metal, a passivation layer is grown on the surface of the upper portion of the luminescent diode chip excepting the surface of an electrode, a welding pad is made on a packing support, the metallic protruding points of the protruding point luminescent diode are inversely welded on the welding pad of the packing support. The method for preparing the diode comprises the following steps: making the passivation layer, sputtering a metal sacrificial layer, making a photoresist mask, forming the metallic protruding points, removing the photoresist mask, removing the metal sacrificial layer, reducing, cutting into separated chips and inversely welding on an SMD support, and then forming an inversely welded LED die set. The method enables the chip of the luminescent diode to be without the gold wire bonding and the die bond technique, directly switches a circuit and assembles the chip on a base plate or a metallic support, realizes the miniaturized package and the die set with multiple chips, and successfully solves the problem of the heat dissipation of the luminescent diode.