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Salient point LED and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, and electrical solid-state devices, etc., can solve the problems of large package volume, space occupied by leads, limiting the application of multi-chip LED products, etc., and achieves relaxation of processing accuracy. requirements, the effect of reducing package size

Active Publication Date: 2011-03-02
APT ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because traditional LED chips need to be connected by wires, the wires occupy additional space, resulting in excessive package volume, which is not conducive to the development of subsequent product miniaturization
And this kind of chip is not conducive to the integration and assembly of control chips. For products that require the assembly of multiple color LED chips, the manufacturing and packaging of traditional LED chips limit the application of multi-chip LED products.

Method used

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  • Salient point LED and manufacturing method thereof
  • Salient point LED and manufacturing method thereof
  • Salient point LED and manufacturing method thereof

Examples

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Embodiment 1

[0036] Combination of technologies, methods and designs adopted for the present invention Figure 5 For illustration, the drawings used are not drawn to scale. For the sake of simplicity, only one LED chip is used as an illustration, and LED chips of different sizes and wavelengths can be used in this embodiment. The manufacturing steps of the gold bump light-emitting diode chip are as follows:

[0037] 1. Form a passivation layer on the LED chip, such as Figure 5 as shown in 5-1;

[0038] 2. Sputtering titanium / gold is the metal sacrificial layer material to form the metal sacrificial layer 15, such as Figure 5 As shown in 5-2

[0039] 3. Make mask 16, such as Figure 5 as shown in 5-3;

[0040] 4. Make gold as the under-bump metal (UBM) material and fill the metal bump (Metal Bump / Stud) material 14 to form gold metal bumps, such as Figure 5 as shown in 5-4;

[0041] 5. Remove the mask 16, such as Figure 5 Shown in 5-5;

[0042] 6. Remove the metal sacrificial lay...

Embodiment approach 2

[0047] For the technology, method and design adopted in the present invention in conjunction with the attached Figure 6 Be explained. The drawings used are not drawn to scale. For the sake of simplicity, only one LED chip is used as an illustration, and LED chips of different sizes and wavelengths can be used in this embodiment. The manufacturing steps of the lead-tin alloy bump light-emitting diode chip are as follows:

[0048] 1. Form a passivation layer on the LED chip, such as Figure 6 As shown in 6-1;

[0049] 2. Sputter titanium / tungsten / copper alloy as the metal sacrificial layer material to form the metal sacrificial layer 15, such as Figure 6 As shown in 6-2;

[0050] 3, make photoresist mask 16, as Figure 6 As shown in 6-3;

[0051] 4. Copper electroplating is used as under-bump metal 13 (UBM) material and lead-tin alloy is electroplated as metal bump 14 (MetalBump / Stud) material to form lead-tin alloy metal bump 14, such as Figure 6 Shown in 6-4.

[00...

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Abstract

The invention relates to a protruding point luminescent diode, wherein a protruding point lower metal is plated on an electrode of a protruding point luminescent diode chip, metallic protruding points are grown on the upper portion of the protruding point lower metal, a passivation layer is grown on the surface of the upper portion of the luminescent diode chip excepting for the surface of the electrode, a welding pad is made on a packing support, the metallic protruding points of the protruding point luminescent diode are inversely welded on the welding pad of the packing support. The methodfor preparing the diode comprises the following steps: making the passivation layer, sputtering a metal sacrificial layer, making a photoresist mask, forming the metallic protruding points, removing the photoresist mask, removing the metal sacrificial layer, reducing, cutting into separated chips and inversely welding on an SMD support, and then forming an inversely welded LED die set. The methodenables the chip of the luminescent diode to be without the gold wire bonding and the wafer fixing technique, directly switches a circuit and assembles the chip on a base plate or a metallic support,realizes the miniaturized package and a die set with multiple chips, and successfully solves the problem of the heat dissipation of the luminescent diode.

Description

technical field [0001] The invention relates to the field of light-emitting diodes and packaging and manufacturing methods thereof, in particular to a bump light-emitting diode and a manufacturing method thereof. Background technique [0002] The structure of the existing traditional gallium nitride-based (GaN) light-emitting diodes, such as figure 1 As shown, it is made by forming multi-layer gallium nitride epitaxial crystals including a light emitting layer 2 on a sapphire substrate 1 . Metal electrodes: P electrode 5 and N electrode 6 are respectively formed on the N-type region 3 crystal layer and the P-type region 4 crystal layer. The commonly used assembly method of the existing light-emitting diode LED is to fix the LED chip in the packaging bracket 8 with an interface thermally conductive material 7 (TIM), and connect the metal electrodes of the LED device and the package of the device through gold wire bonding 9 (Wire Bonding). bracket8. Among them, the metal el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L23/488H01L23/485H01L21/60H01L33/62H01L33/64
CPCH01L2924/01074H01L2924/01047H01L2924/01079H01L2924/01013H01L2924/01049H01L2924/01322H01L24/06H01L2924/01078H01L2224/16H01L2924/01014H01L2224/1403H01L24/14H01L2924/01082H01L2224/06102H01L2924/01046H01L2924/01023H01L2924/0105H01L2924/01029H01L2224/0603H01L2924/01024H01L2924/01005H01L2924/01022H01L2924/01033H01L2224/0401H01L2224/14H01L2924/12041
Inventor 罗珮璁姜志荣陈海英肖国伟陈正豪
Owner APT ELECTRONICS
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