The invention discloses a packaging method of a power
semiconductor packaging
structure based on
DBC interconnection, and the method employs a
DBC interconnection mode, and compared with a conventional
metal wire bonding mode, an upper
DBC board and a lower DBC board are connected through a large-size
copper column, the mode is beneficial to reducing
stray inductance, and the
copper column can also enhance the heat dissipation effect. According to the
phase change material provided by the invention, the
nano silicon nitride is generated on the surface of the carbon
fiber in situ, and through in-situ synthesis, the
nano silicon nitride can form a uniform
coating on the surface of the carbon
fiber, so that the problem of
particle aggregation in the blending process is avoided, and meanwhile, an in-situ generation mode is adopted, so that an effective heat conduction path can be formed on a
microstructure; thermal interface
thermal resistance is reduced, and heat conduction efficiency is improved, so that the heat conduction performance of the phase-change material is improved; and then
stearic acid is adopted to treat the carbon
fiber loaded nano
boron nitride material, so that the dispersing performance of the carbon fiber loaded nano
boron nitride material in paraffin is improved, and the heat conduction efficiency is further improved.