33results about How to "Soft error" patented technology

Content addressable memory (CAM) devices include dual-function check bit cells that can operate as check bit cells to support error detection and correction (EDC) operations or as redundant CAM cells that support column redundancy. Dedicated check bit cells are also provided that have a reduced susceptibility to soft errors relative to adjacent CAM cells. The dedicated check bit cells may also be provided within a global mask cell sub-array to support correction of soft errors within global masks.

Content addressable memory (CAM) devices include error detection and correction (EDC) control circuits therein. The EDC control circuit operates to correct soft errors in entries within a plurality of internal CAM array blocks with, at most, limited interruption to other operations performed by the CAM device. The EDC control circuit utilizes a multi-bit check word associated with each entry to detect a soft error and perform one-bit error correction on the entry. The EDC control circuit is configured to be active during a background mode of operation when the CAM array blocks are undergoing search operations in a foreground mode of operation. A CAM array block may also include a column of dual-function check bit cells that are configured to operate as a column of CAM cells when necessary to replace a defective column of CAM cells.

Systems and methods for mitigating the effects of soft errors in asynchronous digital circuits. Circuits are constructed using stages comprising doubled logic elements which are connected to c-elements that compare the output states of the double logic elements. The inputs of logic elements in a stage are inhibited from changing until the outputs of the c-elements of that stage are enabled. The c-elements inhibit the propagation of a soft error by halting the operation of the circuit until the temporary effects of the soft error pass.

An error of stored data is detected with high accuracy. Data (e.g., a remainder in a CRC) used for detecting an error is stored in a memory in which an error is unlikely to occur. Specifically, the following semiconductor device is used: a memory element including a plurality of transistors, a capacitor, and a data storage portion is provided in a matrix; the data storage portion includes one of a source and a drain of one of the plurality of transistors, a gate of another one of the plurality of transistors, and one electrode of the capacitor; a semiconductor layer including a channel of the transistor, the one of the source and the drain of which is connected to the data storage portion, has a band gap of 2.8 eV or more, or 3.2 eV or more; and the data storage portion stores data for detecting an error.

This invention comprises a layout method to effectively protect logic circuits against soft errors (non-destructive errors) and circuit cells, with layout, which are protected against soft errors. In particular, the method protects against cases where multiple nodes in circuit are affected by a single event. These events lead to multiple errors in the circuit, and while several methods exist to deal with single node errors, multiple node errors are very hard to deal with using any currently existing protection methods. The method is particularly useful for CMOS based logic circuits in modem technologies (≦90 nm), where the occurrence of multiple node pulses becomes high (due to the high integration level). It uses a unique layout configuration, which makes the circuits protected against single event generated soft-errors.

A processor is provided that implements a replay mechanism to recover from soft errors. The processor includes a protected execution unit, a check unit to detect errors in results generated by the protected execution unit, and a replay unit to track selected instructions issued to the protected execution unit. When the check unit detects an error, it triggers the replay unit to reissue the selected instructions to the protected execution unit. One embodiment of the replay unit provides an instruction buffer that includes pointers to track issue and retirement status of in-flight instructions. When the check unit indicates an error, the replay unit resets a pointer to reissue the instruction for which the error was detected.

The flip-flop according to the invention serves for storing an item of logic state information and has at least one data input and at least one data output. The flip-flop comprises at least one latch stage for storing the state information if the flip-flop is switched on. Furthermore, the flip-flop according to the invention comprises at least one memory cell having a capacitance as storage element. In this case, the at least one memory cell serves for storing the state information if the flip-flop is switched off.

A CAM unit has a memory array for storing storage data, and a RAM unit has a memory array for storing the same storage data and check bits added thereto for determining whether the storage data in its memory array has an error. An error correction circuit uses the check bits to correct any error of data read from the memory array of the RAM unit and rewrite the error-corrected data to the memory arrays. Even if a soft error occurs in the storage data, the check bits can be used to correct the error in the data and rewrite the error-corrected data. Thus, a matching comparison can be performed on the storage data with high reliability.

A data processing system includes a memory configured to store data in a plurality of addressable storage spaces thereof, wherein the memory includes a first data port and a second data port, a first functional block configured to access the memory via the first data port to perform a logic operation, and a second functional block configured to access the memory via the second data port to perform soft error scrubbing in the data stored in the memory.

Disclosed is a SRAM cell and a method of manufacturing the same. The SRAM cell comprises: a pair of access devices; a pair of pull-up devices; a pair of pull-down devices; and at least one metal plate formed on metal interconnection lines in contact with a substrate, having a dielectric film interposed between the metal plate and the metal interconnection lines, so as to increase a cell capacitance, thereby reducing a soft error rate. Herein, one metal plate may be included in each cell. In this case, the metal plate overlaps with a first one of metal interconnection lines of a node side and a node bar side, while being in contact with a second one of the metal interconnection lines of the node side and the node bar side. Also, two metal plates may be included in each cell. In this case, the metal plates overlap, respectively, with one metal interconnection line of metal interconnection lines of a node side and a node bar side, while being in contact with another metal interconnection line of the node side or the node bar side, respectively. Therefore, capacitance is additionally formed to increase cell capacitance, so that variation of the electric potentials of cell nodes, which is caused by generated electrons, is prevented, and thereby soft error can be efficiently reduced.

Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for example, and includes a memory array and peripheral circuit on a substrate. In one aspect of the present invention, a buried layer of the same conductivity type as that of the substrate, but with a higher impurity concentration than that of the substrate, is provided beneath at least one of the peripheral circuit and memory array. A further region can extend from the buried layer, for example, to the surface of the semiconductor substrate, the buried layer and further region in combination acting as a shield to prevent minority carriers from penetrating to the device elements. As a second aspect of the present invention, first carrier absorbing areas (to absorb minority carriers) are located between the memory array and the switching circuit of the peripheral circuit, and second carrier absorbing areas are provided to surround input protective elements of the device. As a third embodiment of the present invention, a plurality of isolation regions of the same conductivity type are provided, with unequal voltages applied to these isolation regions, or unequal voltages applied to the substrate, on the one hand, and to these isolation regions, on the other.

The invention relates to a circuit arrangement, comprising: a functional circuit with m (m=1, 2, . . . ) data inputs and n (n=1, 2, . . . ) data outputs for processing at least one m-dimensional binary data input (x1, . . . , xm) to form an n-dimensional data output (y1, . . . , yn), wherein the functional circuit comprises at least one combinatorial circuit part, at least two registers with a word length k (k=1, 2, . . . ; k≦n) which are coupled to at least some of the n data outputs of the functional circuit in order to store output values (y=y1, . . . , yk; y′=y′1, . . . , y′k) which are duplicated with respect to one another or are duplicated with bit-by-bit inversion with respect to one another, said output values being derived from the n-dimensional data output (y1, . . . , yn) of the functional circuit, at least one corrector with an input word length 2k and an output word length k, which is coupled to data outputs of the at least two registers and supplies a k-dimensional corrected data output (y[k](korr)=y1(korr), . . . , yk(korr)), and an error detection circuit for detecting errors during operation of at least one of the aforementioned circuit elements: the functional circuit, the at least two registers and the corrector.

In order to improve the performance of a semiconductor integrated circuit device wherein a capacitor provided between storage nodes of an SRAM and a device having an analog capacitor are formed on a single substrate, a plug is formed in a silicon oxide film on a pair of n channel type MISFETs in a memory cell forming area, and a local wiring LIc for connecting respective gate electrodes and drains of the pair of n channel type MISFETs is formed over the silicon oxide film and the plug. Thereafter, a capacitive insulating film and an upper electrode are further formed over the local wiring LIc. According to the same process step as the local wiring, capacitive insulating film and upper electrode formed in the memory cell forming area, a local wiring LIc, a capacitive insulating film and an upper electrode are formed over a silicon oxide film in an analog capacitor forming area and a plug in the silicon oxide film.

In the present invention, the amount of alpha radiation emitted by a black titanium oxynitride pigment is 0.1 cph/cm2 or less. In addition, it is preferable for the black titanium oxynitride pigment to have a uranium content of 1 ppb by mass or less and a thorium content of 5 ppb by mass or less.