The invention discloses a wide-temperature working mode
screening method for
flash memory particles of a TLC NAND FLASH. The
screening method comprises the following steps: S01, executing a card opening test on the
flash memory particles; corresponding BLOCK erasing time and writing time in particles are determined,
test data stored in an NAND FLASH are read, the number of
bit inversion errors is determined, SLC and TLC performance of the BLOCK is tested under various conditions based on test factors such as the erasing time and the number of the
bit inversion errors, judgment is carried out, meanwhile, a CLOSE BLOCK test is carried out on the BLOCK in a TLC test mode, and therefore the BLOCK test accuracy is improved. Particle testing and boundary determination conforming to wide-temperature operation are carried out through comprehensive summarization of performance under the condition that BLOCK is only fully written by 1 / 2, the problem that in the prior art, storage screening of a wide-temperature
flash memory is poor in reliability is solved, meanwhile, performance of NAND FLASH TLC
Client particles is predicted according to a wide-temperature screening strategy and method, and the performance of the NAND FLASH TLC
Client particles is predicted according to the wide-temperature screening strategy and method. NAND FLASH particles with potential high-
quality performance of high and low temperature work in the future are selected, so that the requirements of higher and stricter application scenes are met.