Method for quickly searching optimal reread voltage of NAND flash memory

A technology of reading voltage and reading voltage, which is applied in the field of data processing and can solve the problems of time-consuming and inefficient re-reading voltage

Inactive Publication Date: 2020-02-14
广州匠芯创科技有限公司
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the time-consuming and inefficient problem of determining the reread voltage in the prior art, the present invention proposes a method for quickly finding the best reread voltage for NAND flash memory

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for quickly searching optimal reread voltage of NAND flash memory
  • Method for quickly searching optimal reread voltage of NAND flash memory
  • Method for quickly searching optimal reread voltage of NAND flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The following will clearly and completely describe the conception, specific structure and technical effects of the present invention in conjunction with the embodiments and accompanying drawings, so as to fully understand the purpose, scheme and effect of the present invention. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The same reference numbers are used throughout the drawings to indicate the same or similar parts.

[0038] It should be noted that, unless otherwise specified, when a feature is called "fixed" or "connected" to another feature, it can be directly fixed and connected to another feature, or indirectly fixed and connected to another feature. on a feature. In addition, descriptions such as up, down, left, and right used in the application are only relative to the mutual positional relationship of the components of the application in the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for quickly searching the optimal reread voltage of an NAND flash memory. The method comprises the following steps: A, respectively determining the quantity of bit inversion of all data in at least one page of the NAND flash memory under all possible read voltage values; B, setting one or more read voltage values corresponding to the minimum bit inversion number asa first read voltage data set, and taking the median of all data values in the first read voltage data set as the optimal reread voltage; and C, if the optimal reread voltage is within the reread voltage range in the NAND flash memory, applying the optimal reread voltage to the NAND flash memory.

Description

technical field [0001] The invention relates to the field of data processing, in particular to a method for quickly finding the best reread voltage of a NAND flash memory. Background technique [0002] NAND flash memory is a storage product widely used today, with excellent characteristics such as fast speed and non-volatile. It actually represents data in the form of stored charges. In actual use, changes in various internal and external conditions will cause changes in the amount of stored charges. If this change accumulates to a certain extent, the default read operation will When accessing NAND flash memory, it is very likely that the correct data cannot be obtained. Generally speaking, manufacturers of NAND flash memory will allow the adjustment of the read voltage used to determine the state of the cell (storage unit), and restore the data correctly by adjusting the read voltage. Usually, this process is called readretry (reread). The present invention provides a met...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/34
CPCG11C16/26G11C16/3404
Inventor 原顺
Owner 广州匠芯创科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap