327results about How to "The process steps are simple" patented technology

The invention belongs to the technical field of back contact cells, and particularly relates to a joint passivation back contact cell and a post-texturing preparation method thereof, and the method comprises the steps: S102, sequentially forming a first semiconductor layer and a mask layer on the back surface of a silicon substrate; s103, cleaning and texturing are carried out, so that a texturing surface is formed on the light receiving surface of the silicon substrate, and the maximum height of a pyramid of the texturing surface of the light receiving surface is T1; s104, sequentially forming a passivation layer and an anti-reflection layer on the light receiving surface of the silicon substrate; s105, forming a second semiconductor opening region; s106, cleaning and etching are carried out, and a groove structure is at least formed in the second semiconductor opening region on the back surface of the silicon substrate; and S107, depositing a second semiconductor layer on the back surface, wherein the second semiconductor layer comprises an amorphous passivation layer and a second doped silicon layer. Under the conditions of simplifying the process steps and reducing the material cost, the interface contact resistance of the second semiconductor opening region can be reduced, the minority carrier lifetime is prolonged, and the cell efficiency and the double-sided rate are improved.

The invention provides a back contact solar cell and a preparation method thereof, and belongs to the technical field of solar cells, and the preparation method comprises the steps: depositing a tunneling oxide layer and a doped polycrystalline silicon layer on the back surface of an n-type silicon wafer, and sintering high-temperature silver paste in a pre-designed interdigital region of an N region on the back surface of the silicon wafer to form a first electrode; then, the tunneling oxide layer, the doped polycrystalline silicon layer and the mask layer in the interdigital region of the back P region are ablated through laser; depositing an amorphous silicon layer and a TCO layer on the back surface of the n-type silicon wafer; sintering low-temperature silver paste on the TCO layer of the P region to form a second electrode; and finally, scanning a grid line formed by sintering the high-temperature silver paste through laser, and melting the amorphous silicon layer, the TCO layer and the mask layer on the grid line and around the grid line, so that the first electrode is isolated from the second electrode. The high-temperature silver paste is used for partially replacing the low-temperature silver paste, so that the use cost of the paste is reduced; through laser scanning grid line ablation, a gap region does not need to be manufactured independently, the manufacturing process is simplified, and the manufacturing cost is reduced.

The invention belongs to the technical field of high-purity gas preparation and catalysis, and discloses a copper-iron double-component composite catalyst for removing trace acetylene and ethylene in petrochemical byproduct hydrogen chloride gas to prepare electronic grade hydrogen chloride gas, and a preparation method of the copper-iron double-component composite catalyst comprises the following steps: immersing activated carbon in hydrochloric acid; washing the activated carbon carrier with deionized water until the pH is neutral, and drying to obtain the pretreated activated carbon carrier; and impregnating the active component on the pretreated active carbon carrier, carrying out ultrasonic-assisted impregnation, standing, and drying, thereby obtaining the product, the active components are Fe metal salt and Cu metal salt. According to the method, trace acetylene and ethylene in the petrochemical byproduct hydrogen chloride gas are catalyzed to react with the hydrogen chloride gas at the same time, so that acetylene and ethylene are removed at the same time, and the acetylene and ethylene removal step in the existing hydrogen chloride purification process is simplified. Compared with a traditional method, the reaction efficiency of preparing the electronic-grade hydrogen chloride gas is remarkably improved.

The invention discloses ice glazing liquid for ice glazing of mussels. The ice glazing liquid is prepared from the following components in percentage by mass: 0.1 to 0.12 percent of sodium polyacrylate, 0.05 to 0.07 percent of sodium erythorbate, 0.01 to 0.03 percent of citric acid, 1 to 1.2 percent of sodium lactate, 0.4 to 0.6 percent of alginate oligosaccharide, 0.1 to 0.12 percent of xanthan gum, 7 to 9 percent of propylene glycol and the balance of water. The ice glaze liquid for ice glaze plating of the mussels is reasonable in compatibility, simple and easily available in components and good in adhesiveness, the formed ice glaze is not easy to crack, the dry loss rate can be reduced, and the quality of the thawed mussels can be ensured. The invention further provides a preparation method of the ice glaze liquid for ice glaze plating of the mussels. The preparation method is simple in process step, high in operability and uniform in component dispersion.

The invention relates to the field of chemical engineering, in particular to an n-hexane separation technology, and more particularly relates to a method and a device for preparing electronic-grade n-hexane. The method for preparing the electron n-hexane comprises the following steps: S1, introducing an adsorbent into an n-hexane raw material to remove moisture in the n-hexane, and then carrying out catalytic hydrogenation reaction to obtain crude n-hexane; and S2, carrying out primary filtration on the material subjected to catalytic hydrogenation, then carrying out light component removal and heavy component removal two-stage rectification to obtain high-purity n-hexane, and carrying out secondary filtration on the high-purity n-hexane to obtain the electronic-grade n-hexane. The device for preparing the electronic-grade n-hexane comprises a raw material tank, an adsorption tower, a catalytic hydrogenation reactor, an intermediate tank, a light component removal tower, a heavy component removal tower and a product tank which are connected in sequence. According to the preparation method and device, high-purity electronic-grade n-hexane meeting the strict requirements of the semiconductor industry can be produced, the process steps are simple, industrial production is easy to achieve, the product quality is stable and reliable, and high economic and social benefits are achieved.

The invention discloses an alkaline cyanide-free cadmium plating process for an ultrahigh-strength steel part. The alkaline cyanide-free cadmium plating process comprises the steps of oil removal, stress elimination, electrolytic oil removal, flowing water washing, weak corrosion, flowing cold water washing, copper pre-plating, flowing cold water washing, alkaline cyanide-free cadmium plating, flowing water washing, hydrogen removal, aftertreatment, drying and inspection. In order to avoid the situation that the metal surface of the workpiece is passivated in a plating tank, the pretreatment process is adopted, a cyanide-free copper electroplating layer is pre-plated on the surface of the workpiece, the surface of the part is adjusted, the surface activity is improved, and then the binding force of a base body and the plated cadmium is improved; according to the method, a stress eliminating process and a long-time hydrogen removing process after plating are adopted before plating, so that the hydrogen embrittlement risk is reduced, the process steps are simple, and the implementation is high.

The invention provides a hybrid passivation back contact battery and a preparation method thereof. The battery comprises a silicon wafer; a third tunneling oxide layer, a first amorphous silicon layer and a first anti-reflection layer are sequentially arranged on the front surface of the silicon wafer; first polishing areas and second polishing areas are alternately arranged on the back surface of the silicon wafer; a first semiconductor layer is at least arranged on the first polishing area; a second semiconductor layer is at least arranged on the second polishing area; a texturing area is arranged between the first polishing area and the adjacent second polishing area; a fourth tunneling oxide layer, a second amorphous silicon layer and a second antireflection layer are sequentially arranged on each of the first polishing region, the texturing region and the second polishing region; the refractive index of the first amorphous silicon layer is 2.2-4, and the refractive index of the first amorphous silicon layer is gradually reduced in the direction from the third tunneling oxide layer to the first anti-reflection layer. According to the invention, the passivation effect is improved, so that the battery efficiency is improved. In addition, the passivation layers on the front surface and the back surface can be deposited and formed in the same tubular PECVD, so that the process steps are simplified, and the equipment cost is reduced.

The invention belongs to the technical field of surface treatment, and discloses an acid pickling process for an alpha layer on the surface of a biphase titanium alloy forge piece, and the used acid pickling solution comprises 100-130 g / L of HNO3 with the concentration of 65-68%, 35-55 g / L of HF with the concentration of 40%, and the balance of water. The pickling solution with the proportion shows a stable rate of removing the alpha layer of the forge piece under the constant temperature condition of 20-50 DEG C, and the rate is about 0.01 mm / min. In order to ensure that no alpha layer residue exists on the surface of the forge piece and avoid excessive pickling, the thickness of the oxygen-enriched alpha layer on the surface of the forge piece is detected through a metallographic method, the thickness is increased by 0.03 mm-0. 08mm on the basis of the detected maximum value of the thickness of the alpha layer and set as the pickling amount, the pickling time is calculated according to the pickling rate, and the oxygen-enriched alpha layer on the surface of the double-phase titanium alloy forge piece is accurately removed. The process can be realized by only one pickling solution, the pickling time is determined according to the pickling amount, the imagination of incomplete pickling or excessive pickling is avoided, the production process is effectively simplified, and the period is shortened.

The present invention discloses a method for extracting papain with a low-temperature plasma-assisted low-eutectic solvent. The extraction method comprises the following steps: using papaya peel as a processing raw material, putting it into a low-eutectic solvent, using low-temperature plasma to perform a mild and strong wall-breaking treatment on it, and the low-eutectic solvent dissolves the protease to obtain an extract; adding a protective agent to the extract, and then separating and freeze-drying through a multi-stage ceramic membrane to obtain papain. Compared with the prior art, the method of the present invention uses a low-toxic and environmentally friendly low-eutectic solvent in combination with low-temperature plasma to extract papain. During the treatment process, the low-temperature plasma causes the cell wall to rupture in a relatively short time, increases the extraction rate, effectively shortens the extraction time, and improves the enzyme activity. It has the characteristics of low temperature, fast and no residue, and simple operation. The low-eutectic solvent replaces the organic solvent, which is not only environmentally friendly and efficient, low cost, simple to operate, but also can be effectively recycled and suitable for large-scale production.

The invention provides a semiconductor power module and a preparation method of the semiconductor power module, and relates to the technical field of semiconductors. The semiconductor power module comprises a bearing substrate, a double-sided metal substrate, a chip, a conductive connecting layer and a connecting wire, the double-sided metal substrate is arranged on the bearing substrate, and the double-sided metal substrate comprises a bearing insulating layer, a first metal layer, a second metal layer and a third metal layer; the chip is arranged on the second metal layer; the conductive connecting layer is sintered and fixed on the surface of one side, deviating from the second metal layer, of the chip and covers an electrode of the chip; the connecting wire is bonded between the conductive connecting layer and the third metal layer. Compared with the prior art, the method has the advantages that the conductive connecting layer fixed through sintering does not need to be additionally welded with copper foil during actual lead bonding, the copper foil preparation and welding steps in the conventional technology are omitted, the lead bonding process can be simplified, the process difficulty is low, and the process cost is reduced.

The invention discloses a long-time strong-adhesion tissue repair patch and a preparation method thereof, and the preparation method comprises the following steps: adding an adhesion component, an anti-swelling component and alpha-ketoglutaric acid into a colloidal aqueous solution of a patch matrix material to obtain a precursor solution; and pouring the precursor solution into a patch mold, carrying out ultraviolet curing, and drying the obtained gel to obtain the patch. From the selection of materials and chemical bonds, physical and chemical bonds such as amido bonds, disulfide bonds and catechol groups are combined, so that the adhesion strength is improved, the adhesion duration is prolonged, and the adhesive has excellent anti-swelling performance and mechanical performance, can effectively isolate external saliva, food residues and the like when being applied to the oral cavity, reduces infection of ulcer wounds, and has a good application prospect. The dental ulcer healing is accelerated, and the method also has a relatively good application prospect in the field of tissue repair.

The invention discloses a preparation method and application of a Gd-doped rutile type ruthenium dioxide nanosheet, and the Gd-doped rutile type ruthenium dioxide nanosheet is successfully prepared by taking RuCl3 and GdN3O9 as raw materials and adopting a salt template method. When being used as an oxygen evolution catalyst for producing hydrogen by electrolyzing water, the oxygen evolution catalyst shows excellent (OER) oxygen evolution performance, realizes the overpotential of 230mV under the current density of 10mA cm <-2 >, and has excellent conductivity, wider potential window and high redox reversibility, thereby having a wide application prospect in the field of electrocatalysis. In addition, the preparation method disclosed by the invention has the characteristics of simple process steps, safety, easiness in control, easiness in obtaining raw materials, few chemical reagents used in the whole preparation process, small environmental pollution, mild experimental conditions, relatively short time consumption, low cost and the like, so that the preparation method is suitable for industrial popularization and application.

The invention provides a power device with improved short-circuit current capability and a manufacturing method thereof. The power device comprises at least one cell. The cell is divided into two half cells along the width direction of the cell. Each half cell comprises a drift region, a source doped region and a source metal connected with the source doped region. The source doped region includes a source region and a plurality of contact regions. The source region comprises at least one first extension region, the plurality of contact regions are arranged in the length direction of the cell, and any two adjacent contact regions are spaced by the first extension region. And configuring the connection state of the source metal and the source doped region to be local connection of the source metal of at least one half-cell and at least one first extension region. According to the power device, the on-resistance is increased by prolonging the path of current flowing through the source region, and the short-circuit current capability is improved. The gate structures of part of the cells of the power device are adjusted, so that the short-circuit current capability and the conduction current capability of the device are further balanced. The manufacturing method is simple in steps.

The invention discloses a method for preparing a micro-channel heat dissipation chip through combination of laser beam modulation and etching, and the method comprises the steps: controlling a laser light source assembly to output a laser beam, carrying out the phase modulation of the laser beam through a spatial light modulator, and outputting a plurality of laser beams forming a pattern, the plurality of laser beams are focused by the galvanometer field lens scanning system to form light spots to modify the substrate glass in a corresponding pattern array, wherein the modified pattern array is related to the micro-channel structure; and performing wet etching on the modified pattern array on the substrate glass to obtain the micro-channel heat dissipation chip. According to the method, a spatial light modulator is introduced, and modulated ultrashort pulse laser is used for performing high-efficiency induction on a glass substrate material, so that high-efficiency preparation of the micro-channel heat dissipation chip is realized.

The invention discloses a pressure reducer shell surface modification method, which belongs to the technical field of pressure reducer shell processing, and comprises the following steps: (1) surface oil removal and cleaning treatment, (2) surface shot blasting treatment, (3) surface electric arc spraying treatment, and (4) cooling treatment. The treatment process is simple in step and reasonable in matching, the surface characteristics of the pressure reducer shell are effectively enhanced, the corrosion resistance and weather resistance of the pressure reducer shell are remarkably enhanced, and the service life of the pressure reducer shell is effectively prolonged.

The invention belongs to the technical field of positive electrode materials, and particularly relates to an acid-washed carbon-coated lithium-rich manganese-based positive electrode material as well as a preparation method and application thereof. The invention provides a preparation method of a pickled carbon-coated lithium-rich manganese-based positive electrode material, which comprises the following steps: preparing a lithium-rich manganese-based precursor, pickling and sintering to prepare the pickled carbon-coated lithium-rich manganese-based positive electrode material, pickling with a pickling solution; the pickling solution comprises an acidic carbon-based material. The acid-washed carbon-coated lithium-rich manganese-based positive electrode material prepared by the invention has relatively high specific discharge capacity, initial efficiency and cycle retention rate.

The invention provides a pressure sensor and a preparation method thereof, the pressure sensor comprises a first wafer, a top semiconductor layer, a lead structure, a lead hole and a conductive column, the upper surface layer of the first wafer is provided with an absolute pressure cavity and an isolation groove; the top semiconductor layer is stacked on the upper surface of the first wafer, the lower surface layer of the top semiconductor layer is provided with a sensor functional area, the edge area of the sensor functional area is provided with four varistors which are uniformly and symmetrically distributed, each varistor comprises at least one resistance area, and the edge and the peripheral area of the sensor functional area are provided with a plurality of connecting areas connected with the two ends of each varistor; the plurality of lead structures are located on the lower surface of the top semiconductor layer and located in the isolation groove, and one end of each lead structure is electrically connected with the connection area; the lead hole is opened from the bottom surface of the first wafer and the lead structure is exposed from the bottom surface; the conductive pillar fills the lead hole. The sensor structure is improved, and the functional area of the sensor covers the opening of the absolute pressure cavity, so that the device is prevented from being influenced by the external environment, and the sensitivity of the device is ensured.

The invention relates to the technical field of lithium battery positive electrode material preparation, and discloses a high-porosity iron phosphate preparation method, which comprises: 1, mixing ferrous sulfate and a monoammonium phosphate solution to obtain a mixed solution; 2, stirring and heating the mixed solution, and adding an oxidizing agent and a precipitating agent for reaction; after the reaction is finished, filtering and washing; step 3, heating and aging the filtered and washed filter cake, and then filtering, washing and drying to obtain iron phosphate dihydrate; 4, the iron phosphate dihydrate is smashed, an additive is added, calcination is conducted, porous iron phosphate is obtained, and the additive is at least one of cetyltrimethylammonium bromide, citric acid and polyvinylpyrrolidone. According to the invention, the additive is creatively added in the calcination stage of the iron phosphate, and the gasification of the additive in the calcination stage enables multiple pores to appear on the surface of the iron phosphate, which is beneficial for greatly improving the grinding efficiency and reducing the energy consumption and the cost in the grinding stage of preparing the lithium iron phosphate.

The invention discloses a manufacturing method of color electronic paper, the color electronic paper and a color display device. The manufacturing method of the color electronic paper comprises the following steps: manufacturing a driving layer, wherein the driving layer comprises a plurality of driving pixel units; manufacturing a capsule filter layer on the surface of the driving layer; the capsule light filtering layer comprises a plurality of capsule light filtering units; the capsule filtering units are in one-to-one correspondence with the pixel electrodes; each capsule light filtering unit comprises a color photoresist and a plurality of black and white electronic ink capsules filled in the color photoresist, and the plurality of capsule light filtering units form an R-color pattern, a G-color pattern and a B-color pattern; manufacturing a transparent electrode layer on the surface of the capsule filter layer; and manufacturing a transparent substrate or a waterproof layer on the surface of the transparent electrode layer. The color filter layer and the electronic ink capsule layer are combined into a whole, the total thickness of the color filter layer and the electronic ink capsule layer is reduced, the color cast phenomenon is avoided, and the display device has the advantages of being small in light resistance and high in segregation degree.

The invention relates to a fireproof composite material deck which is composed of a foam sandwich and composite material skin layers arranged on the upper side and the lower side of the foam sandwich. The composite material skin layer comprises a fiber pouring layer and a hand lay-up layer. In implementation, the mode that the hand lay-up layer and the pouring layer are combined is adopted on the upper portion and the lower portion of the foam sandwich respectively, so that the upper surface and the lower surface of the composite material deck are both provided with efficient flame-retardant filler, the oxygen index of the composite material deck is larger than or equal to 36, and if the oxygen index is generally larger than or equal to 32, the composite material deck belongs to a flame-retardant material; and meanwhile, the ratio of the accelerant in the hand lay-up layer is relatively low, so that the pre-curing of the resin in the hand lay-up layer in the laying and pouring molding process can be effectively prevented, and the product quality is improved.

The invention discloses a high-thermal-conductivity ceramic material and an additive manufacturing method thereof. The method comprises the following steps: ball-milling and mixing aluminum nitride, a sintering aid, a first wetting dispersant and an organic solvent, and then drying and sieving to obtain modified aluminum nitride powder; carrying out vacuum ball-milling mixing on the photocuring prepolymer and a photocuring monomer to obtain a photocuring premixed solution; under a dark condition, carrying out vacuum ball-milling mixing on the modified aluminum nitride powder, the photocuring premixed liquid, a second wetting dispersant, a plasticizer and a photoinitiator to obtain photocuring ceramic slurry; carrying out layer-by-layer printing and curing by adopting photocuring ceramic slurry to obtain an aluminum nitride ceramic green body; and sequentially cracking, degreasing and sintering the aluminum nitride ceramic green body to obtain the high-thermal-conductivity ceramic material. The prepared aluminum nitride ceramic body is strong in interlayer bonding, high in solid content and high in precision, and the heat conductivity of the sintered aluminum nitride ceramic body is higher than 200W / m.K. The method provided by the invention has simple process steps.

The embodiment of the invention discloses a metal oxide semiconductor transistor and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate; forming a source region and a drain region in the substrate; forming a first dielectric structure exposing the drain region and the source region on the substrate, wherein the first dielectric structure comprises a gate dielectric layer located on the substrate and a first dielectric layer located on the gate dielectric layer; forming a gate conductor at a preset position of the gate dielectric layer, wherein the first dielectric layer at least exposes part of the upper surface of the gate conductor; forming a first field plate on the first dielectric layer; and after the first dielectric structure and the first field plate are formed, gate silicide, source silicide and drain silicide are respectively formed on the exposed gate conductor, the source region and the drain region. The first field plate is used as a partial etching barrier layer of the etching process for forming the opening for exposing the source region and the gate conductor, so that the process difficulty of forming the etching barrier layer is reduced.

The invention discloses an iron monatomic catalyst as well as a preparation method and application thereof, and belongs to the technical field of catalyst preparation. Porous amidoximation polyacrylonitrile is prepared from polyacrylonitrile powder by combining gelation, a non-solvent phase separation process and an amidoximation reaction, then the porous amidoximation polyacrylonitrile is soaked in a metal salt solution to obtain porous amidoximation polyacrylonitrile chelated with iron ions and zinc ions, and finally the high-temperature pyrolysis process is performed. The porous metal chelate precursor is converted to a porous iron monatomic catalyst. The prepared catalyst has high specific surface area and abundant three-dimensional continuous hierarchical porous structures, contains abundant Fe-N2O2 catalytic active sites, and can efficiently catalyze cathode oxygen reduction reaction in fuel cells and metal-air cells.

The invention provides a preparation method of a solar cell and the solar cell, and the method comprises the steps: providing a solar cell precursor which comprises a conductive layer and an insulating layer located on the conductive layer; forming a conductive paste covering a local area of the insulating layer, wherein the conductive paste has a triangular cross section; the conductive slurry is sintered to form a seed layer penetrating through the insulating layer to be in contact with the conductive layer, and the seed layer has a triangular cross section; and forming a plating layer covering the seed layer exposed outside the insulating layer using a plating process to form a gate line including the seed layer and the plating layer, the gate line having a triangular cross section. The electroplated layer has the triangular cross section, so that the light irradiated on the electroplated layer can be reflected to the active region of the solar cell.

The invention discloses modified polyether polyol as well as a preparation method and application thereof, the modified polyether polyol simultaneously contains a polyether main chain, ester side groups, halogen atoms and customizable chemical active sites, and can be used for preparing a novel functional structure polyurethane material with rich ether bonds and ester bonds. And a new raw material selection is provided for preparation of a polyurethane material. The preparation method of the modified polyether polyol, disclosed by the invention, is simple in process steps and easy to industrially popularize and apply. On one hand, the esterification degree can be adjusted and controlled through the reaction temperature, the reaction time, the catalyst, the feeding ratio and the like, on the other hand, the structural design of the modified polyether polyol can be achieved by designing the carboxylate structure, and the functional ester group modified polyether polyol is endowed with unique performance. According to the invention, a novel upstream raw material is provided for functionalized polyurethane and derivative products thereof, and the resin is expected to be developed into a novel high polymer material and has good market potential.

The invention discloses an upsetting method of a large height-diameter ratio aluminum alloy round ingot, which relates to the technical field of aluminum alloy product processing, and comprises the following steps: (1) removing the head and the tail of the aluminum alloy round ingot, (2) pre-punching, (3) heating, and (4) upsetting. The treatment process is simple in step, the produced aluminum alloy round ingot is large in upsetting ratio and small in residual stress, the instability phenomenon does not occur in the forging and pressing process, upsetting of the round ingot with the large height-diameter ratio is achieved, the compactness and mechanical performance of the aluminum alloy round ingot can be improved, and the internal tissue and structure of the aluminum alloy round ingot can be improved.

The invention discloses a preparation method of colloidal silicon dioxide, which comprises the following steps: adding an organic alkali solution into ultrapure water, then adding a proper amount of alkoxy silane, stirring to obtain a clear and transparent solution, and then adding a stabilizer solution to obtain hydrolysate; adding an organic alkali solution into a certain amount of hydrolysate to obtain a mother solution; heating the mother liquor to 90-100 DEG C, and preserving heat for at least 10 minutes to obtain a silicon dioxide crystal nucleus; heating the crystal nucleus until the crystal nucleus is boiled, and dropwise adding hydrolysate under the condition that the pH value of a system is 9.0-10.5 to prepare a dilute silicon dioxide solution; and removing excess water from the dilute silicon dioxide solution in a boiling state to obtain colloidal silicon dioxide. The preparation method is simple, convenient and stable in process. The obtained colloidal silicon dioxide nanoparticles are very high in purity, and the total metal impurity content is 1t; the pH value is 9.0-10.5, the particle size is 20-80 nm, the solid content is 20-40%, and the polishing agent is very suitable for being applied to an integrated circuit polishing process.

The invention provides a long-life valve control type power storage battery positive electrode lead paste formula containing a composite conductive polymer binder. The formula comprises the following components: lead powder; wherein the lead powder contains the following components in percentage by weight: 2%-5% of red lead, 8%-12% of pure water, 9%-13% of dilute sulphuric acid, 0.15%-0.3% of high-purity graphite, 0.07%-0.15% of super-strong polyester staple fibers, 0.05%-0.15% of stannous mono-sulphate, 0.05%-0.15% of antimony trioxide and 0.15%-0.35% of a polymer binder; by adding the conductive polymer, increasing the conductivity, increasing the binding force between the active substances and between the active substances and the grid, the stability of the positive plate structure in the charging and discharging process is ensured, and the softening and falling of the lead paste are reduced, so that the charging acceptance of the positive active substance is improved, and the cycle service life of the valve-regulated power storage battery is prolonged. The conductive polymer is adsorbed on the surface of the positive electrode powder and can inhibit the growth of sulfate crystals on the surface of the electrode, thereby reducing the influence of sulfation on the service life.

The invention provides a photovoltaic module, a manufacturing method of the photovoltaic module and a related device. A photovoltaic front plate glass layer in the photovoltaic module is made of a light-transmitting material, and the photovoltaic front plate glass layer is used for protecting photovoltaic cells and an internal structure in the photovoltaic module; the first photovoltaic adhesive film and the second photovoltaic adhesive film are used for bonding adjacent assembly structures; the photovoltaic battery piece is used for converting light energy into electric energy; the back plate layer is used for ensuring the flatness of the photovoltaic module and providing support for the multi-layer structure; the metal back plate serves as a bottom support and is used for enhancing the overall structural strength of the photovoltaic module; a multi-layer structure in the photovoltaic module is obtained by stacking, laminating, curing and packaging, and the laminating time of the multi-layer structure is determined according to the thicknesses of the first photovoltaic adhesive film, the second photovoltaic adhesive film and the polymeric film; the expansion coefficient of the photovoltaic front plate glass layer and the metal back plate is determined by the cooperative deformation capability of each component in the photovoltaic module. According to the embodiment of the invention, the structural performance of the photovoltaic module can be improved, and the efficiency can be improved in the production link.

The present invention discloses a casting mold with rapid and uniform cooling and a manufacturing method thereof. The casting mold cavity is composed of a mold block and a powder metallurgy composite surface layer. The mold block is a porous metal block formed by sintering metal wires, which is machined to obtain a shape that matches the upper mold and the lower mold, and its entire surface is covered with a metal powder composite surface layer; the upper mold and the lower mold are respectively equipped with a cooling fluid inlet pipe and a cooling fluid outlet pipe; the cooling fluid inlet pipe is connected to the cooling fluid inlet, communicates with the mold block, and forms a cooling fluid channel with the cooling fluid outlet pipe. This manufacturing method includes pressing and sintering of a metal block, preparation of a powder metallurgy composite surface layer, and rolling extrusion. The present invention has a simple structure, a convenient manufacturing method, is easy to implement, and has a low production cost; it significantly improves the heat exchange efficiency between the fluid and the mold, realizes rapid solidification of the forming material, and improves production efficiency; and has good market application prospects.