3results about How to "Improve leakage current" patented technology

This invention relates to a display panel and a display device including the display panel. The display panel includes: a pixel circuit connected to a data line, a plurality of gate lines, a plurality of constant voltage nodes, a first light-emitting element, and a second light-emitting element; a first gate driver configured to output a first scan signal; a second gate driver configured to output a second scan signal; and a multiplexer configured to select the first scan signal, the second scan signal, and a gate cutoff voltage, and output them to the corresponding gate lines.

This invention discloses a photoresist stripping device that avoids parasitic gate effects and murex patterns. The photoresist stripping device is sequentially configured with a drying zone, a stripping zone, a hot water washing zone, an ultracooled water washing zone, and an air drying zone according to the substrate transport direction. A hot air knife for blowing hot air onto the substrate surface is provided at the outlet of the stripping zone. A second spray pipe for spraying hot water onto the substrate surface is provided in the hot water washing zone. A cold air knife for blowing cold air onto the substrate surface is provided at the inlet of the ultracooled water washing zone. A third spray pipe for spraying ultracooled water onto the substrate surface is provided in the ultracooled water washing zone. The photoresist stripping device also includes a vortex tube, a heating device, and a cooling device. This invention avoids the product yield and quality risks caused by parasitic gate effects and murex patterns; it also ensures the versatility of the photoresist stripping equipment, which is beneficial for production line logistics optimization and capacity improvement.

This invention relates to the field of silicon nitride etching technology, specifically a method for dry etching of silicon nitride using extremely low power, comprising the following steps: S1. Fixing the workpiece to be etched on the chuck of a plasma etching machine, closing the chamber, and evacuating to a chamber background pressure ≤2mTorr; S2. Introducing a composite etching gas into the chamber; S3. Starting a pulsed radio frequency power supply to excite the composite gas to generate plasma; S4. Adjusting various parameters of the chamber; S5. After etching is completed, evacuating the chamber, then introducing helium gas to purge the chamber until the chamber pressure returns to atmospheric pressure; S6. Introducing a mixed gas, ashing treatment, and then introducing H2 plasma to repair dangling bonds on the silicon nitride surface to complete the etching. This invention discloses a method for dry etching of silicon nitride using extremely low power, relating to the field of semiconductor manufacturing technology. This method, through the synergistic design of "precisely proportioned composite gas system + pulsed radio frequency excitation + multi-field coupling process control," achieves efficient, highly selective, and low-damage etching of silicon nitride layers at extremely low radio frequency power.