8results about How to "Improve leakage current" patented technology

The invention discloses a transistor, a semiconductor device, a preparation method thereof and electronic equipment. The transistor comprises a source electrode, a channel region and a drain electrode which are sequentially arranged along a first direction, and a grid electrode which is arranged at the periphery of the channel region in an insulating manner; the source electrode comprises a first semiconductor layer and a second semiconductor layer, the same ends of the first semiconductor layer and the second semiconductor layer in the first direction are connected with the channel region, and the second semiconductor layer is located on the side, close to the grid electrode, of the first semiconductor layer in the direction perpendicular to the first direction. The doping concentration of the first semiconductor layer is smaller than that of the second semiconductor layer. The invention relates to the technical field of semiconductor devices, in particular to a transistor, a semiconductor device, a preparation method of the semiconductor device and electronic equipment, and aims to restrain accumulation of holes in a channel as a starting point, relieve formation of a parasitic bipolar transistor and prolong storage retention time.

This invention relates to a display panel and a display device including the display panel. The display panel includes: a pixel circuit connected to a data line, a plurality of gate lines, a plurality of constant voltage nodes, a first light-emitting element, and a second light-emitting element; a first gate driver configured to output a first scan signal; a second gate driver configured to output a second scan signal; and a multiplexer configured to select the first scan signal, the second scan signal, and a gate cutoff voltage, and output them to the corresponding gate lines.

This invention discloses a photoresist stripping device that avoids parasitic gate effects and murex patterns. The photoresist stripping device is sequentially configured with a drying zone, a stripping zone, a hot water washing zone, an ultracooled water washing zone, and an air drying zone according to the substrate transport direction. A hot air knife for blowing hot air onto the substrate surface is provided at the outlet of the stripping zone. A second spray pipe for spraying hot water onto the substrate surface is provided in the hot water washing zone. A cold air knife for blowing cold air onto the substrate surface is provided at the inlet of the ultracooled water washing zone. A third spray pipe for spraying ultracooled water onto the substrate surface is provided in the ultracooled water washing zone. The photoresist stripping device also includes a vortex tube, a heating device, and a cooling device. This invention avoids the product yield and quality risks caused by parasitic gate effects and murex patterns; it also ensures the versatility of the photoresist stripping equipment, which is beneficial for production line logistics optimization and capacity improvement.

This invention relates to the field of silicon nitride etching technology, specifically a method for dry etching of silicon nitride using extremely low power, comprising the following steps: S1. Fixing the workpiece to be etched on the chuck of a plasma etching machine, closing the chamber, and evacuating to a chamber background pressure ≤2mTorr; S2. Introducing a composite etching gas into the chamber; S3. Starting a pulsed radio frequency power supply to excite the composite gas to generate plasma; S4. Adjusting various parameters of the chamber; S5. After etching is completed, evacuating the chamber, then introducing helium gas to purge the chamber until the chamber pressure returns to atmospheric pressure; S6. Introducing a mixed gas, ashing treatment, and then introducing H2 plasma to repair dangling bonds on the silicon nitride surface to complete the etching. This invention discloses a method for dry etching of silicon nitride using extremely low power, relating to the field of semiconductor manufacturing technology. This method, through the synergistic design of "precisely proportioned composite gas system + pulsed radio frequency excitation + multi-field coupling process control," achieves efficient, highly selective, and low-damage etching of silicon nitride layers at extremely low radio frequency power.

The invention provides a semiconductor device and a preparation method thereof, and belongs to the technical field of semiconductors. The active region is positioned in the substrate and extends along a first direction; the gate structure is located on the surface of the substrate and crosses the active region along a second direction, and the second direction is orthogonal to the first direction; the trench isolation structure is located in the substrate and surrounds the active region, grooves are formed in the edges of the two sides, making contact with the active region, of the trench isolation structure, and the grooves are located below the gate structure; the groove is filled with the wide bandgap semiconductor material layer, the wide bandgap semiconductor material layer is in contact with the edge of the active region, the top of the wide bandgap semiconductor material layer is in contact with the bottom of the gate structure, and the bandgap width of the wide bandgap semiconductor material layer is larger than that of the substrate. The performance of the semiconductor device can be improved.

The utility model discloses a filter for medical frequency converter, including connector J1 and connector J2, the one foot of connector J1 is connected respectively piezo -electric resistance MOV1, piezo -electric resistance MOV3, inductance L1 one foot, electric capacity C2 and electric capacity C3, piezo -electric resistance MOV1 other end connects inductance L1 three feet, piezo -electric resistance MOV3 other end connects gas discharge tube and piezo -electric resistance MOV2 respectively, gas discharge tube ground connection, piezo -electric resistance MOV2 other end connects inductance L1 three feet, electric capacity C2 other end connects electric capacity C1, electric capacity C1 ground connection, electric capacity C3 other end ground connection, inductance L1 two feet connects electric capacity C5, electric capacity C4, resistance R1 and inductance L2 one foot respectively, electric capacity C4 other end ground connection, resistance R1 other end connects electric capacity C10, electric capacity C10 ground connection, electric capacity C5 other end connects inductance L1 four feet.

The embodiments of the present disclosure provide a semiconductor structure and a forming method thereof, wherein the semiconductor structure comprises: a substrate; memory cells arranged in an array along a first direction and a third direction on a surface of the substrate; the memory cells at least comprise a channel structure and a drain arranged along a second direction; the channel structure comprises a first channel region and a second channel region; an electron mobility of a bulk material of the channel structure is greater than an electron mobility of a bulk material of the drain; the second channel region is connected with the drain, and a size of the second channel region is less than or equal to a size of the first channel region.

The utility model discloses a self-healing insulating power cable terminal accessory, which relates to the technical field of insulating power cables and comprises an accessory body, and a sealing mounting mechanism is arranged at one end of the accessory body. Through the arrangement of the sealing installation mechanism, the effect of sealing the connecting position can be achieved, in the using process, the upper clamping hoop and the lower clamping hoop are connected through the cooperation of the bolt and the nut, the sealing ring is installed and fixed to the connecting position through the upper clamping hoop and the lower clamping hoop, the connecting position is sealed through the sealing ring, and the sealing effect is good. The problems that water, moisture and dust enter, cable insulation is damaged, leakage current is increased, insulation resistance is reduced, partial discharge is caused, even cable breakdown short circuit is caused, water and moisture corrode cable conductors and metal parts of terminal accessories, contact resistance is increased, the connecting position is heated, and the service life of the cable is prolonged due to the fact that the connecting position cannot be sealed can be solved. Therefore, the service life of the cable terminal accessory is ensured.