354 results about "Contact process" patented technology

The invention includes processes for combined polymer surface treatment and metal deposition. Processes of the invention include forming an aqueous solution containing a metal activator, such as an oxidized species of silver, cobalt, ruthenium, cerium, iron, manganese, nickel, rhodium, or vanadium. The activator can be suitably oxidized to a higher oxidation state electrochemically. Exposing a part to be plated (such as an organic resin, e.g. a printed circuit board substrate) to the solution enables reactive hydroxyl species (e.g. hydroxyl radicals) to be generated and to texture the polymer surface. Such texturing facilitates good plated metal adhesion. As part of this contacting process sufficient time is allowed for both surface texturing to take place and for the oxidized metal activator to adsorb onto said part. The part is then contacted with a reducing agent capable of reducing the metal activator to a lower ionic form, or a lower oxidation state. That reduction can result in the formation of metallic catalytic material over the surface of the part. The reduced metal activator can then function to catalyze the electroless deposition of metal such as copper from solution by contacting the part with the plating solution.

When a natural oxide film is left at the interface between a metal silicide layer and a silicon nitride film, in various heating steps (steps involving heating of a semiconductor substrate, such as various insulation film and conductive film deposition steps) after deposition of the silicon nitride film, the metal silicide layer partially abnormally grows due to oxygen of the natural oxide film occurring on the metal silicide layer surface. A substantially non-bias (including low bias) plasma treatment is performed in a gas atmosphere containing an inert gas as a main component on the top surface of a metal silicide film of nickel silicide or the like over source/drain of a field-effect transistor forming an integrated circuit. Then, a silicon nitride film serving as an etching stop film of a contact process is deposited. As a result, without causing undesirable cutting of the metal silicide film, the natural oxide film over the top surface of the metal silicide film can be removed.

A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

A thin film formation method is provided which can carry out various kinds of patterning deposition correctly and with high precision, and a thin film formation equipment. The thin film formation method arranges a mask between a substrate and a material source and forms the material of the material source as a thin film on the substrate. The method further includes: a substrate contacting process to contact the mask and the substrate; a gap measurement process to measure a gap between the mask and the substrate; and a thin film formation process to form the thin film according to the measurement result in the gap measurement process.

A process kit for use in a physical vapor deposition (PVD) chamber, along with a PVD chamber having a non-contact process kit are provided. In one embodiment, a process kit includes a generally cylindrical shield that has a substantially flat cylindrical body, at least one elongated cylindrical ring extending downward from the body, and a mounting portion extending upwards from an upper surface of the body. In another embodiment, a process kit includes a generally cylindrical deposition ring. The deposition ring includes a substantially flat cylindrical body, at least one downwardly extending u-channel coupled to an outer portion of the body, an inner wall extending upward from an upper surface of an inner region of the body, and a substrate support ledge extending radially inward from the inner wall.

In a casting membrane forming process (63), a dope containing a solid electrolyte is cast on a casting belt (93) from a casting die. On the casting belt, a casting membrane (61) is formed. In a casting membrane drying process (66a), the casting membrane (61) is dried. In a solvent contacting process (66b), the casting membrane (61) contacts a poor solvent of the solid electrolyte. By a self-supporting property developing process (66), a self-supporting property is given to the casting membrane (61) for a short time. The casting membrane (61) is peeled from the casting belt (93) as a precursor membrane (67). The precursor membrane (67) is immersed into water. After the precursor membrane (67) is dried, a proton substitution is performed to obtain a hydrogen-substituted membrane (75). By washing and drying of the hydrogen-substituted membrane (75), a solid electrolyte membrane (79) is obtained.

An arrangement for the controlled production of an essentially linear array of hydrocarbon feed injection jets reduces required clearances and elevation while facilitating modification of the contacting locating a feed distributor containing a linear array of jets at a standpipe junction point to provide choke point for particle flow control. The flow properties of the extended particle layer are controlled by adjusting the density of the particles above the choke point created by the upper part of the standpipe inside diameter and the top of the distributor. Steam or another fluidization medium may be added to the particles directly above the distributor for this purpose. This invention can also modify the particle or feed injection characteristics by changing the projection of the distributor into the standpipe to adjust the flow area over the choke point and by the use of bottom slides or baffles to change the flow area size and configuration. Location of the distributor at a standpipe junction will also typically allow the placement of the distributor at a lower location in the process which eliminates the need to add vessel height for supplying pressure drop for the particle discharge point. The distributor arrangement also fits compactly into most common standpipe junctions. Thus, the arrangement of this invention solves the problem of inserting an extended array of feed injection points into a fluidized particle contacting process without providing a large amount of clearance or additional vessel height.

The invention provides an olefin polymerization catalyst, which contains titanium, silicon, magnesium, phosphorus, an internal donor compound and halogen. The invention further provides a method for preparing the olefin polymerization catalyst disclosed by the invention. The invention further provides an olefin polymerization method. Silicon is introduced into the olefin polymerization catalyst, so that the catalytic activity of the olefin polymerization catalyst for olefin polymerization is 1.1-1.5 times higher than that of a catalyst into which silicon is not introduced in the prior art. According to the method for preparing the olefin polymerization catalyst disclosed by the invention, a silane compound is introduced in the contacting process of a magnesium compound, an organic epoxy compound and an organic phosphorus compound in a solvent, so that the activity of the prepared catalyst is much higher than that of a catalyst obtained with a method in which a silane compound is not introduced in the prior art. The method disclosed by the invention has the advantages of readily-available raw materials and low production cost.

A process for producing a membrane electrode assembly for fuel cells containing a polymer electrolyte membrane having a first and a second surface parallel to each other. The first surface forms a firm composite with a first catalyst layer and a first water repellent gas distribution layer and said second surface form a firm composite with a second catalyst layer and a second water repellent gas distribution layer. The catalyst layers are prepared by using inks containing electrocatalysts, one or more solvents, proton-conducting ionomer and optionally water repelling agents and pore-forming agents. In the process the two catalyst layers are applied to or contacted with the respective surfaces of the polymer electrolyte membrane successively, wherein during the application or contacting process to one surface always the opposite surface of the membrane is supported.

The present invention is directed to a process for synthesizing nanoparticles. This process involves providing a stable emulsion containing a plurality of droplets suspended in a continuous phase. The droplets, which are encapsulated by an interfacially-active material, contain a first reactant dissolved in a dispersed phase. The process also involves contacting a gas phase containing a second reactant diluted in a carrier gas with the stable emulsion under conditions effective to permit the first reactant and second reactant to react and form nanoparticles. The present invention further relates to nanoparticle-loaded emulsions and their uses in formulations for various purposes.

An isolation assembly for connection to a process transmitter and for mitigating high temperature effects of a process fluid includes a process coupling face having an isolation diaphragm configured to contact process fluid. A transmitter coupling has a pressure coupling configured to couple to a pressure port of the process transmitter. A temperature isolation fluid conduit extends between the process coupling face and the transmitter coupling and carries an isolation fluid which couples a pressure applied to the isolation diaphragm to the pressure coupling to minimize high temperature effects of the process fluid on the process transmitter.

Provided are semiconductor devices having a system-on-chip (SOC) configuration that combines both a capacitor-based cell-array memory region and one or more MOS core/peripheral circuit/logic regions on a single chip and a method for manufacturing such devices. The manufacturing process reduces the number of additional photolithographic processes required and modifies the relationship between the sizing of various layers and/or structures to reduce the fabrication cost and improve the reliability of the resulting devices. In particular, the capacitors for the memory region are formed in the same insulating layer as the first metal pattern for the core/peripheral circuit/logic regions of the devices, thereby producing capacitors and metal patterns of substantially the same height and thickness respectively. A landing structure may also be formed in the cell array region in combination with the first metal pattern for improving the contact process in the cell array region.

The invention discloses an ultrasonic vibration and welding wire feed system composite welding method and a device thereof which are provided with a stable welding process, high quality of welding seams, controllable welding pool grain growth phenomenon after welding, and high welding quality in normal welding surroundings. The objective is achieved by following steps: transmitting cavitation effect and vibration effect to the welding pool during the welding wire and welding pool contacting process by broadcasting the ultrasonic in the welding wire feed system. The melt drop size at the terminal of the welding wire is controlled effectively by ultrasonic action during welding process, transition from melt drop to welding pool is more stable, and welding seam quality is further improved. Since ultrasonic is applied in the welding feed system during welding process, welding wire melt drop transition condition is affected, energy distribution status during welding process is improved, thereby refinement and homogenization degree of the joint, and mechanical property such as intensity are further enhanced.

The invention discloses an efficient trapping system of micro-nanometer dust in the air. The invention comprises an air trapping opening, a filter core, a sprayer, a big and small flow micro pump, an atomizing nozzle, a liquid storage chamber, trapping liquid, a baffle and a vacuum pump, which construct an air flow route and a liquid circulation route, the system designs the air containing dust and the trapping liquid to experience four different absorption and trapping processes continuously, so as to realize efficient trapping of the micrometer and nanometer dust composed of various grains. By changing the variety of the trapping liquid or adjusting the hydrophile-lipophile balance (HLB) value of the trapping liquid, and improving the wettability of the trapping liquid and the nano dust in the air, micro nanometer fiber, thin sheet dust and other solid dust particles of various forms, containing micro-nano particles, can be efficiently trapped. The invention designs a plurality of air-liquid continuous contact processes, the air containing dust and the trapping liquid are only mixed and absorbed in the system, thus efficiently trapping nano dust in various dust density environment air including occupation workplaces.

A pressure sensor assembly includes an elongate pressure sensor mounted to a sensor mounting block. A protective element covers the elongate pressure sensor to prevent the pressure sensor from contacting process fluid.

The invention relates to a method and a device for measuring the dynamic contact heat exchange coefficient of a high-temperature solid interface, which are particularly suitable for measuring the dynamic contact heat exchange coefficients of the high-temperature solid interfaces of metals, ceramics and composite materials. The measuring device is mainly provided with a vacuum chamber, a hydrauliccylinder, a cold-end test sample, an industrial personal computer, a heating system, a fixed chuck, a hot-end test sample, a temperature-measuring thermocouple, a mobile chuck and the like, wherein inthe vacuum chamber, the cold-end test sample is clamped on the mobile chuck and the hot-end test sample is clamped on the fixed chuck; after the hot-end test sample is heated, a hydraulic impact loading system is started to allow the cold-end test sample to complete contacting the hot-end test sample at a certain speed or a certain contact pressure and keep in a contact and conductive state; andthe industrial personal computer acquires related data in a contact process and performs calculation processing to obtain the dynamic contact heat exchange coefficient of the solid interface of two kinds of materials. The method and the device can solve the problems of extremely low temperature range, difficult realization of dynamization of a heat transfer process and the like of the prior measurement of the dynamic contact heat exchange coefficient of the solid interface.

The invention relates to a roof contacting process in a goaf filling treating procedure and belongs to the technical field of mining engineering. The technical scheme of the roof contacting process in the goaf filling treating procedure includes: detecting a goaf to obtain the coordinate of the top point position of a top plate; drilling a filling drill hole at the top point position of the top plate, and performing cementing filling; installing a three-way plug valve on a filling pipe of the filling drill hole, and guiding a washing pipeline out on the filling pipe through the three-way plug valve; when the position with 1m away from the top point of the top plate is filled, extending the filling pipe to the position farthest from the filling drill hole, and simultaneously, arranging a 1-1.5m temporary retaining wall on the filling drill hole portion; when cement body is full, continuing to fill; and finally opening the three-way plug valve, guiding water away through the washing pipeline and finishing the filling roof contacting work. The roof contacting process is particularly suitable for filling the goaf generated during the filling exploitation process afterwards, is good in filling roof contacting effect and low in working intensity, saves filling roof contacting cost, achieves the roof contacting maximumly, is high in roof contacting efficiency, and ensures normal production of mines.

The invention discloses a three-dimensional display panel and a manufacturing method thereof, and a three-dimensional display device. The three-dimensional display panel comprises an organic electroluminescent display device and a liquid crystal raster arranged at the light-emitting side of the organic electroluminescent display device. Because the organic electroluminescent display device and the liquid crystal raster share one substrate, so that one substrate is saved and thus the production cost is lowered; and the thickness of the three-dimensional display panel is reduced. Moreover, the process of contact of the organic electroluminescent display device with the liquid crystal raster is saved; the manufacturing process is simplified; and a problem of poor display caused by damages of all film layers in the organic electroluminescent display device can be avoided during the contact process.

The invention relates to a method for contacting a flexible sheet to a first element with improved lateral alignment. The method includes a step of measuring a first lateral misalignment after establishing a first contact between the flexible sheet and either of the first element and a sheet parking surface called anchor in the first stage. If the 5 misalignment exceeds a predetermined threshold the flexible sheet is parked at the anchor such that it is not in contact with the first element, and the relative position of the first element and the anchor is altered during the second stage for correcting the mismatch during a contact between the flexible sheet and the first element to be established within the next step of the method. During the steps of shifting the contact point to obtain the second stage 10 the contacting process is more accurate and reproducible than the process for establishing the initial contact. The invention also relates to an apparatus for executing the method, and the use of the method and apparatus for the manufacture of devices.

The invention is suitable for the technical field of laser machining and provides a manufacturing method of ground glass. The manufacturing method includes the following steps: presetting a laser etching pattern and technological parameters according to a ground pattern and a ground pattern effect; and placing glass to be processed on a working platform of a laser etching device, starting the laser etching device, and enabling a laser to be focused on the glass to be processed and scan the glass so as to form the ground pattern. The laser is used for performing non-contact process on common glass so as to enable the common glass to become the ground glass, a base body of the glass cannot be damaged, and the manufacturing method facilitates improvement of quality and finished product rate of the ground glass.

Method and apparatus for fabricating contacts to substrate regions through a low k, low density dielectric. A cap is formed over gates and side spacers are formed along the edges of the gates so as to surround the gates in a relatively dense (e.g., silicon dioxide) insulative material. A low k or low density layer of a polymer or silica aerogel or xerogel material is formed in contact with the substrate covering the gate structures including the spacers. An unlanded contact opening is etched through the low k, low density dielectric with an etchant that provides high selectivity between the insulation surrounding the gate and the low k, low density layer.

Silicon oxide film having, as a sublayer, a silicon nitride film layer serving as a protective film layer for gate formed on silicon substrate is etched by introducing a processing gas including a gaseous mixture containing at least C₄F₆, Ar, O₂ and N₂ into an airtight processing chamber and carrying out a plasma treatment in a self-alignment contact process, thereby forming contact hole. For the processing gas, e.g., the ratio of N₂ gas flow rate to C₄F₆ gas flow rate ranges from 25/8 to 85/8, the ratio of O₂ and N₂ gas flow rate to C₄F₆ gas flow rate ranges from 15/4 to 45/4 and the ratio of N₂ gas flow rate to O₂ gas flow rate ranges from 5 to 17. Accordingly, stable contact holes of high aspect ratio exhibiting desirable control characteristics is formed while minimizing etching the silicon nitride film, a protective film layer for gate.

The present invention relates to a method for forming a planar conductive surface on a wafer. In one aspect, the present invention uses a no-contact process with electrochemical deposition, followed by a contact process with electrochemical mechanical deposition.